TWI411119B - 製造具有用於表面鈍化之結晶矽p-n同質接面及非晶矽異質接面之太陽能電池的方法 - Google Patents
製造具有用於表面鈍化之結晶矽p-n同質接面及非晶矽異質接面之太陽能電池的方法 Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract 4
- 238000000034 method Methods 0.000 title claims description 41
- 238000002161 passivation Methods 0.000 title abstract description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 149
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- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 11
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- 239000000463 material Substances 0.000 abstract description 18
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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Description
大體而言,本發明係關於矽太陽能電池。更具體而言,本發明係關於一種可減少表面電洞與電子再結合之晶圓結構,及一種可使引入薄矽晶圓之應力更低以增強其結構完整性之方法。
太陽能電池係將光能轉換成電能之裝置。該等裝置亦常稱為光電伏打(PV)電池。太陽能電池可由多種半導體製造。一種常用半導體材料係結晶矽。
太陽能電池含有3個主要元件:(1)半導體;(2)半導體接面;及(3)導電觸點。半導體(例如矽)可為n-型或p-型摻雜。當n-型矽與p-型矽接合時,太陽能電池中其接觸之區域即為半導體接面。半導體可吸收光。來自光的能量可轉移至矽層原子的價電子上,此使該價電子逃逸其束縛狀態而留下一個電洞。該等光致電子及電洞由與p-n接面相關聯之電場分離。導電觸點使電流自太陽能電池流向外電路。
圖1展示先前技術太陽能電池之基本元件。太陽能電池製備於矽晶圓上。太陽能電池5包含p-型矽基材10、n-型矽發射體20、底部導電觸點40、及頂部導電觸點50。n-型矽20與頂部導電觸點50相接合。p-型矽10與底部導電觸點40相接合。頂部導電觸點50及底部導電觸點40與負載75相接合。
包含銀之頂部導電觸點50使電流流入太陽能電池5。然而,由於銀不透光,因此頂部導電觸點50不能覆蓋電池5之整個表面。因此,頂部導電觸點50具有可使光進入太陽能電池5之網格圖案。電子自頂部導電觸點50流出、經過負載75、然後經由底部導電觸點40與電洞匯合。
底部導電觸點40通常包含鋁-矽共晶。此導電觸點40通常覆蓋p-型矽10之整個底部以使傳導率最大化。在大約750攝氏度之高溫下鋁與矽形成合金,該溫度遠高於577攝氏度之鋁-矽共晶溫度。該合金化反應可在基材底部產生高度摻雜之p-型區域並在那裏產生強電場。該電場可幫助與p-n接面相關聯之電場分離電洞與電子,從而在頂部觸點上收集電子並在底部觸點上收集電洞。
本發明提供一種太陽能電池結構,其包含p-n同質接面及異質接面表面鈍化以藉由在表面上再結合以減少電子及電洞損耗,以及用於增強p-n同質接面之內部電場。本發明提供一種適合在薄結晶矽晶圓上製造該太陽能電池之製作方法。在一個實施例中,將具有p-n同質接面與異質接面表面鈍化之複數個太陽能電池串聯連接,並接合至透明封裝材料及反射材料上。
上述說明係概述,因而勢必包含細節之簡化、歸納及省略;因此,熟習此項技術者應瞭解,該概述僅為闡釋性而絕非意欲作為限定性說明。在下文所述之非限定性詳細說明中,如僅由申請專利範圍所界定的本發明之其他態樣、
發明特徵、及優點將變得顯而易見。
在下文詳細說明中列舉大量具體細節以提供對本發明之充分瞭解。然而,熟悉此項技術者將瞭解無需該等具體細節亦可實施本發明。在其他情況中,未詳細闡述衆所周知之方法、程序、組件及電路,以使本發明不會被這些實施例所掩蓋。
因為太陽能清潔可靠,因此其係一種理想資源。然而,迄今為止達成太陽能更大利用的一個障礙係太陽能收集系統之成本昂貴。矽太陽能電池製造成本的大約75%在於矽晶圓自身之成本。因此,理論上可自矽錠上切割之晶圓越多,越可實現成本節省。然而,較薄晶圓之良率通常會降低。而且,若在製造過程中暴露於不均勻高溫及暴露於來自矽晶圓上其他層(尤其來自鋁-矽共晶層)之應力,則較薄晶圓會發生變形。
圖2繪示根據本發明一個實施例由薄矽晶圓製造太陽能電池之製作方法的流程圖。舉例而言,該方法可用於由厚度範圍為100微米至150微米(該厚度相對目前標準較薄)之矽晶圓製作電池。然而,本發明之範圍不限於薄太陽能電池,且可施用於其他裝置,例如光電二極體或光電檢測器。在操作100中,在厚度介於大約50與500微米之間之結晶矽晶圓上形成p-n同質接面。該晶圓可為單晶或多晶。該晶圓表面亦可具有紋理。舉例而言,具有(100)表面之結晶矽晶圓可使用各向異性蝕刻形成紋理以產生具有(111)晶
體定向面的小四面金字塔之陣列。該紋理化表面可有助於降低反射率及在太陽能電池內部捕獲光。
對本發明之一個實施例,在具有p-型摻雜之矽晶圓一側形成n-型擴散層。該擴散層可在擴散熔爐內形成。圖4展示用於摻雜複數個矽晶圓410之擴散熔爐400的實施例。該擴散熔爐包含晶圓舟405、複數個矽晶圓410、及複數個摻雜劑源420。摻雜劑源420具有將n-型摻雜劑(例如磷、銻、或砷)施用於兩個表面上之源。
可將複數個矽晶圓410及複數個摻雜劑源420以一定模式置於晶圓舟405上,從而使2個矽晶圓410放於第一摻雜劑源420與第二摻雜劑源420之間。舉例而言,圖4展示摻雜劑源420置於晶圓舟405最左邊槽上。第一矽晶圓410與此摻雜劑源420相鄰,其後係第二矽晶圓410,矽晶圓410之後又係第二摻雜劑源420。若該模式繼續直至晶圓舟405中充滿摻雜劑源420及矽晶圓410,則單個摻雜劑源420在每組2個矽晶圓410各側將其夾在中間。圖4之晶圓的中心間距可係大約3/32英吋。矽晶圓410與摻雜劑源420之安放及間距使各矽晶圓410之一個表面層摻入來自摻雜劑源420之雜質。
一旦該複數個矽晶圓410及複數個摻雜劑源420安放於晶圓舟上,則將熔爐溫度設定為介於大約700與1000攝氏度之間以使摻雜劑分子自各摻雜劑源420擴散至鄰近矽晶圓410之表面。注意將薄矽晶圓加熱至高於700攝氏度之高溫通常係不利的,因為此會在矽晶圓中導致應力誘發彎曲之
風險。然而在此情況下,可加熱整個晶圓而非僅使晶圓之一部分或表面受熱。由於將跨越晶圓之溫度梯度最小化,因此亦將擴散過程中之變形風險降至最小,因此在該方法之該階段可接受高溫加熱。
該擴散過程亦可用於具有n-型摻雜之矽晶圓上。對本發明之另一實施例,可在複數個n-型矽晶圓之一側上形成p-型擴散層。在該實施例中,矽晶圓410經n-型摻雜。摻雜劑源420經p-型摻雜劑(例如硼、鎵、銦、或鋁)塗覆。隨後在擴散熔爐400中使該n-型矽晶圓擴散。
在相同熱循環中但在擴散過程完成之後,可以大約3000標準立方公分/分鐘之流速向熔爐中注入氧氣以在操作110中在各矽晶圓兩側生長氧化物層。在大約900攝氏度溫度下經大約10至30分鐘後,在晶圓兩側形成厚度為5至20奈米之熱氧化物。在形成該氧化物層的過程中,某些包括任何潛在受污染表面部分之矽晶圓被消耗。在其形成過程中,大約10奈米厚之氧化物層自其初始表面消耗大約4.5奈米矽。此可確保氧化物層正下方之矽品質純潔。
然後,在操作120中自各矽晶圓移除該等氧化物層。與習知方法相反,對於最後蝕刻,不需要濕式化學清潔方法自晶圓表面移除有機及金屬污染。典型濕式化學清潔方法之實例包括含氫氧化銨或鹽酸(RCA潔淨級)與過氧化氫之溶液及含硫酸與過氧化氫之溶液。該等溶液通常在高於室溫、經常在約80攝氏度下使用。由於氧化物層已消耗任何潛在污染物,因此移除氧化物層後將暴露未受污染之矽表
面。清潔表面在形成高品質異質接面中極其重要。
對本發明之一個實施例,使用稀氫氟酸(HF)溶液自晶圓兩個表面剝離該等熱氧化物層。HF溶液以體積計可包含24份水與1份49%HF。使用該溶液之熱氧化物蝕刻速率為大約8奈米/分鐘。因此,20奈米氧化物層之蝕刻時間介於大約2與3分鐘之間。
當表面自親水狀態變成疏水狀態時,表面蝕刻即完成。換言之,若矽表面上仍存在熱氧化物,則水會鋪展於其表面。一旦氧化物層自矽表面剝離,水就會在表面彙聚成珠。此時,晶圓表面之懸掛矽鍵以氫原子端接,以使矽為非晶矽沈積作好準備。蝕刻後不用水沖洗以保持經氫端接表面之條件。不需水沖洗乃因其疏水狀態而使蝕刻溶液可自表面乾淨地流下。
移除該氧化物層且懸掛鍵經端接後,在操作130中,使未摻雜非晶矽層沈積於該晶圓之兩側。對本發明之一個實施例,未摻雜或本徵非晶矽可藉由熱絲化學蒸氣沈積(HWCVD)法來沈積。在該方法中,在基板上將一條金屬絲加熱至約2000攝氏度之溫度,並可在沈積室中保持大約10毫托(millitorr)之壓力。該金屬絲可由鉭或鎢構成。
該熱絲使矽烷分子分解。當分子片段與矽晶圓之相對較冷表面接觸時,該等片段凝結並停留於表面上,同時從氣相轉變成固相。理想的是,將矽晶圓加熱至介於大約50與200攝氏度之間以向矽原子提供移動性從而形成非晶矽材料。然而,重要的是保持溫度低於大約400攝氏度以防止
非晶矽由於結晶而損失鈍化性質。
對本發明之另一實施例,使用電漿增強化學蒸氣沈積(PECVD)法使未摻雜非晶矽層沈積。該方法亦使用矽烷作為進料氣體。矽烷氣體可由射頻電漿之作用分解。可使用介於大約13與70兆赫之間之頻率來激發電漿。
對本發明之又一實施例,未摻雜非晶矽層係藉由膨脹熱電漿(ETP)技術來沈積。
未摻雜非晶矽層可施用至矽之前表面及後表面兩者。非晶矽與結晶矽之間之突兀介面有助於減少結晶矽表面之電洞與電子的再結合。前面及後面未摻雜非晶矽層可依序或同時施用。各未摻雜非晶矽層皆具有大約2至10奈米之厚度。矽晶圓前表面上未摻雜非晶矽層之厚度可大約與後表面上未摻雜非晶矽層之厚度相等。另外,矽晶圓前表面上未摻雜非晶矽層之厚度可小於後表面上未摻雜非晶矽層之厚度,從而避免在非晶矽層內(其中光致載流子之壽命極短)過量吸收光。由於後面未摻雜非晶矽層中吸收光極少,因此可將其加厚從而改良表面鈍化。
本徵非晶矽層沈積後,在操作140中,將第一摻雜非晶矽層添加至該晶圓之前側。若該矽晶圓之基板係p-型,則將摻雜n-型非晶矽層沈積於該晶圓之前側、或發射體側。或者,若該矽晶圓之基板係n-型,則將摻雜p-型非晶矽層沈積於該晶圓之前側。可藉由HWCVD、PECVD、或ETP進行沈積。
在HWCVD方法中,以1份矽烷對1.2份存於氫氣中的5%
膦之比例在大約60毫托之壓力下施用矽烷與存於氫氣中的5%膦。而且,將晶圓保持於大約100至300攝氏度範圍之溫度下。摻雜非晶矽層之厚度可為大約4至20奈米。較佳地在不同室內形成第一摻雜非晶矽層,以避免污染用於沈積未摻雜非晶矽之室。
在操作150中,將第二摻雜非晶矽層添加至晶圓後側。該摻雜非晶矽層具有與第一摻雜非晶矽層相反之類型。因此,若第一摻雜非晶矽層為摻雜p-型,則第二摻雜非晶矽層為摻雜n-型,且反之亦然。可藉由HWCVD、PECVD、或ETP施用第二摻雜非晶矽層之沈積。
對於HWCVD,以1份矽烷對5份存於氫氣中的2.5%二硼烷之比例在大約70毫托之壓力下施用矽烷與存於氫氣中之2.5%二硼烷,並將晶圓保持於大約150至350攝氏度之溫度下。在該操作中所生長之摻雜非晶矽層之厚度可為大約4至20奈米。
在操作160中,在晶圓兩側形成厚度大約為75奈米之透明導電氧化物。該等透明導電氧化物層覆蓋矽晶圓之整個前側及後側。該等透明導電氧化物層基本上透明且具有大約2.0之折射率。對該等透明導電氧化物層之該折射率加以選擇旨在提供介於空氣(折射率為1.0)與矽(折射率為大約4)折射率之間的適宜中間值。透明導電氧化物用作太陽能電池之有效抗反射塗層。
該透明導電氧化物可包含氧化銦錫。90%銦、10%錫合金可在氧氣存在下蒸發以在保持於低於250攝氏度之溫度
下的晶圓上形成氧化銦錫層。舉例而言,該晶圓溫度可介於150與250攝氏度之間。該沈積係在真空條件及一定氧分壓下實施。
對於本發明之另一實施例,透明導電氧化物可包含氧化鋅與鋁。除蒸發外,可藉由濺鍍施加透明導電氧化物層(例如氧化鋅及氧化銦錫)。可依序或同時施加該等透明導電氧化物層。
最後,在操作170中向該等透明導電氧化物層施加觸點。該等觸點為包含銀之網格線。可藉由絲網印刷、噴墨印刷、或經蔭罩蒸發來施加該等網格線。亦可施用低於450攝氏度之熱處理來分解印刷材料、或促進銀線對透明導電氧化物層之黏附作用。
銀網格線不可直接與結晶矽表面接觸。向透明導電氧化物層施加觸點可避免習用同質接面電池(其中金屬與結晶矽表面直接接觸)之極大再結合區。
圖3A至3F繪示該製作方法各階段之矽晶圓一個實施例的剖面圖。圖3A包含摻雜基板200、擴散層210、第一熱氧化物層220、及第二熱氧化物層225。矽晶圓可為單晶矽或多晶矽。圖3A展示上述操作100與110之後的矽晶圓。
摻雜基板200係接合至擴散層210。摻雜基板200可為p-型或n-型。若基板200為p-型,則擴散層210為n-型。或者,若基板200為n-型,則擴散層為p-型。摻雜基板200與擴散層210間之介面係同質接面。同質接面n-側之正固定電荷與同質接面p-側之負固定電荷產生電場。該電場將光
致電子引導至n-側並將光致電洞引導至p-側。同質接面用於分離大部分光致載流子,藉此使其聚集於觸點。
一個熱氧化物層220生長於擴散層210上,且第二熱氧化物層225生長於摻雜基板200上。形成熱氧化物層220、225可消除藉由大量濕式化學清潔準備矽表面之昂貴且費時之步驟。如上文所解釋,熱氧化方法消耗部分矽晶圓,包括受污染的任何表面部分。
因此,在操作120中移除熱氧化物層220、225後,摻雜基板200及擴散層210之暴露表面實質上無污染物,如圖3B所示。而且,用於剝離氧化物層220、225之稀HF溶液提供氫原子以暫時端接晶圓表面之懸掛鍵,從而藉由消除原本會形成的再結合中心而有助於表面鈍化。再結合中心較為不利,乃因其可破壞由光吸收而產生之電荷載流子且因此降低太陽能電池之效率。當未摻雜非晶矽層(其含有大量原子氫)沈積時,該暫時鈍化變成永久鈍化。
圖3C繪示在操作130中,未摻雜非晶矽層沈積於晶圓兩側後之矽晶圓。該晶圓包含摻雜基板200、擴散層210、第一未摻雜非晶矽層230、及第二未摻雜非晶矽層235。第一非晶矽層230及第二未摻雜非晶矽層235有助於結晶矽晶圓表面之鈍化。
圖3D繪示在操作140中第一摻雜非晶層沈積於晶圓前面之後的矽晶圓。第一摻雜非晶矽層240與第一未摻雜非晶矽層230相接合。第一未摻雜非晶矽層230與擴散層210相接合。擴散層與摻雜基板200相接合。摻雜基板200與未摻
雜非晶矽235相接合。
類似地,圖3E繪示在操作150中第二摻雜非晶矽層245沈積於晶圓第二側之後的矽晶圓。更具體而言,除圖3D之組件外,圖3E還包含與第二未摻雜非晶矽層235接合之第二摻雜非晶矽層245。第一摻雜非晶矽層240與第二摻雜非晶矽層245可補充未摻雜非晶矽層230、235以鈍化結晶矽晶圓之頂部及底部表面。第一摻雜非晶矽層240與擴散層210具有相同類型,且第二摻雜非晶矽層245與摻雜基板200具有相同類型。第一摻雜非晶矽層240及擴散層210之類型與第二摻雜非晶矽層245及摻雜基板200之類型相反。對本發明之一個實施例,第一摻雜非晶矽層240及擴散層210係p-型,而第二摻雜非晶矽層245及摻雜基板200係n-型。對本發明之另一實施例,第一摻雜非晶矽層240及擴散層210係n-型,而第二摻雜非晶矽層245及摻雜基板200係p-型。
非晶矽層240、230與結晶矽層210相接合以使電荷在該等層之間流動,此產生有效異質接面。而且,該異質接面具有與結晶矽同質接面之電場方向相同的電場。該等電場具有相同方向乃因摻雜非晶矽層240與擴散層210具有相同電荷類型。
由於非晶矽層245、235與結晶矽層200接合,因此在彼介面上亦具有異質接面。該異質接面具有亦與結晶矽同質接面電場方向相同的電場。該等電場具有相同方向乃因摻雜非晶矽層245與摻雜基板200類型相同。因此,有效異質接面可用於補充並加強同質接面之作用。
由該兩個異質接面產生之電場用於補充或加強同質接面之電場。加強電場允許電子更自由地流經太陽能電池並流入與太陽能電池接合的外部負載。
圖3F繪示操作160及170之後的矽晶圓。第一透明導電氧化物層250與第一摻雜非晶矽層240相接合且第二透明導電氧化物層255與第二摻雜非晶矽層245相接合。透明導電氧化物層250與複數個觸點260相接合,且透明導電氧化物層255與複數個觸點265相接合。太陽能電池300包含矽晶圓、非晶矽層、透明導電氧化物層、及觸點。由於金屬與透明導電氧化物接觸而不直接與結晶矽表面接觸,因此可消除習用太陽能電池中與金屬/矽介面相關聯之高表面再結合損失。透明導電氧化物層250用作太陽能電池300之抗反射塗層。透明導電氧化物層250可覆蓋太陽能電池300之整個前表面。而且,透明導電氧化物層250、255具有足夠低之薄層電阻,以提供電流抵達觸點260、265之橫向導電途徑。透明導電氧化物層250、255之薄層電阻可在30至100歐姆/平方範圍內。
隨後可將由矽晶圓製造之太陽能電池納入太陽能模組中。圖5所示之太陽能模組包含複數個太陽能電池300、第一封裝材料510、玻璃板515、第二封裝材料520、背板530、正端子540、及負端子550。
太陽能模組之太陽能電池經串聯連接以提高電壓。具體而言,將太陽能電池彼此銲接以使第一太陽能電池300之陰極觸點與第二太陽能電池300之陽極觸點相接合。第二
太陽能電池300之陰極觸點與第三太陽能電池300之陽極觸點連接。該模式繼續進行直至模組之所有太陽能電池300銲接在一起。藉由串聯連接太陽能電池可將各太陽能電池300產生之電壓與下一電池之電壓累加。對本發明之一個實施例,在單個模組中有36個太陽能電池串聯連接在一起。對本發明之另一實施例,在單個模組中有72個太陽能電池串聯連接在一起。太陽能模組之正端子與第一太陽能電池300之陽極觸點相接合。太陽能模組之負端子與串聯連接在一起的複數個太陽能電池300的最後一個電池的陰極觸點的負端子相接合。
封裝材料510與複數個太陽能電池300之一側相接合。封裝材料520與複數個太陽能電池300之第二側相接合。封裝材料510、520可包含折射率與玻璃類似的透明材料(例如乙烯乙酸乙烯酯)以使光透過太陽能電池300以及防止太陽能電池300受到潛在有害元件及對象之損壞。
在該模組之製作過程中,將第一封裝材料510與第二封裝材料520擠壓在一起並加熱。乙烯乙酸乙烯酯熔化並圍繞複數個太陽能電池300流動。隨後將玻璃板515與第一封裝材料510相接合以進一步保護太陽能電池300。由於封裝材料510及玻璃板515具有基本相同的折射率,因此該兩層具有單層之光學性質。
背板530與第二封裝材料520相接合。該背板530可包含反射材料,例如聚氟乙烯。透過玻璃板515、封裝材料510、且未由太陽能電池300吸收之任何光線均透過封裝材
料520射出。隨後該光線可反射出背板530且第二次透過太陽能電池300,並賦予太陽能電池300第二次吸收光線之機會。
在上述說明書中,已參照本發明之具體例示性實施例對本發明予以闡釋。然而,顯而易見,可在不背離隨附申請專利範圍所列之本發明更廣泛精神和範圍之情況下對本發明做出各種修改及改變。因此,應將本發明說明書及附圖視為具有說明意義而非限制意義。
5‧‧‧太陽能電池
10‧‧‧p-型矽
20‧‧‧n-型矽
40‧‧‧底部導電觸點
50‧‧‧頂部導電觸點
75‧‧‧負載
200‧‧‧摻雜基板
210‧‧‧擴散層
220‧‧‧熱氧化物
225‧‧‧熱氧化物
230‧‧‧未摻雜非晶矽
235‧‧‧未摻雜非晶矽
240‧‧‧摻雜非晶矽
245‧‧‧摻雜非晶矽
250‧‧‧透明導電氧化物
255‧‧‧透明導電氧化物
260‧‧‧複數個觸點
265‧‧‧複數個觸點
300‧‧‧太陽能電池
400‧‧‧擴散熔爐
405‧‧‧晶圓舟
410‧‧‧矽晶圓
420‧‧‧摻雜劑源
510‧‧‧封裝材料
515‧‧‧玻璃板
520‧‧‧封裝材料
530‧‧‧背板
540‧‧‧正端子
550‧‧‧負端子
圖1係先前技術太陽能電池之剖面圖。
圖2係太陽能電池製作方法之一個實施例的流程圖。
圖3A至3F係該製作方法各階段之矽晶圓一個實施例的剖面圖。
圖4係用以形成至矽晶圓之擴散層以及在所有晶圓表面上形成二氧化矽薄層之熔爐的實施例。
圖5係具有複數個太陽能電池之太陽能模組。
(無元件符號說明)
Claims (22)
- 一種方法,其包含:在熱循環中於薄結晶矽晶圓之摻雜基板上形成擴散層,其中該熱循環係在熔爐中實施,及其中該擴散層之導電性類型係與該摻雜基板之至少一相鄰部份之導電性類型相反,藉此形成p-n同質接面;將氧氣注入該熔爐中以在該熱循環中在近於該擴散層之該結晶矽晶圓之第一表面上形成第一氧化物層及在相對於該擴散層之該結晶矽晶圓之第二表面上形成第二氧化物層;去除該第一及第二氧化物層以暴露該結晶矽晶圓之該第一及第二表面;在該結晶矽晶圓之該第一表面上形成第一未摻雜非晶矽層;在該結晶矽晶圓之該第二表面上形成第二未摻雜非晶矽層;在該第一未摻雜非晶矽層上形成第一摻雜非晶矽層,其中該第一摻雜非晶矽層之導電性類型係與該擴散層之導電性類型相同;及在該第二未摻雜非晶矽層上形成第二摻雜非晶矽層,其中該第二摻雜非晶矽層之導電性類型係與該擴散層之導電性類型相反。
- 如請求項1之方法,其中該第一未摻雜非晶矽層與該第二未摻雜非晶矽層係同時形成。
- 如請求項1之方法,其中該結晶矽晶圓具有介於大約50與500微米之間之厚度。
- 如請求項1之方法,其中該第一氧化物層具有大約等於該第二氧化物層之厚度。
- 如請求項1之方法,其中該擴散層係於介於大約700與1000攝氏度之間之溫度範圍下形成於該結晶矽晶圓之該摻雜基板上。
- 如請求項1之方法,其中在該第一與第二氧化物層形成過程中消耗一部分結晶矽晶圓。
- 如請求項1之方法,其中無需製備型濕式化學清潔方法而去除該第一及第二熱氧化物層。
- 如請求項1之方法,其中該第一與第二熱氧化物層係使用氫氟酸(HF)溶液去除。
- 如請求項8之方法,其中該HF溶液以體積計係由大約24份水與1份49%HF構成。
- 如請求項1之方法,其中第一未摻雜非晶矽層係藉由熱絲化學蒸氣沈積(HWCVD)法在大約10毫托之壓力下使矽烷分解來形成,其中該結晶矽晶圓係處於大約100攝氏度之溫度下。
- 如請求項10之方法,其中矽烷分子係在該HWCVD法中藉由加熱至大約2000攝氏度之金屬絲分解。
- 如請求項1之方法,其中第一未摻雜非晶矽層係藉由電漿增強化學蒸氣沈積法使矽烷分解而形成,其中施加介於大約13與70兆赫之間之射頻電漿。
- 如請求項1之方法,其中該第一未摻雜非晶矽層具有介於大約2與10奈米之間之厚度。
- 如請求項1之方法,其中該結晶矽晶圓之該擴散層係p-型,其中該結晶矽晶圓之該摻雜基板係n-型,其中該第一摻雜非晶矽層係p-型,其中該第二摻雜非晶矽層係n-型。
- 如請求項1之方法,其中該結晶矽晶圓之該擴散層係n-型,其中該結晶矽晶圓之該摻雜基板係p-型,其中該第一摻雜非晶矽層係n-型,其中該第二摻雜非晶矽層係p-型。
- 如請求項1之方法,其中該第一摻雜非晶矽層係藉由HWCVD使用矽烷與存於氫氣中之5%膦的組合形成,其中該組合在大約60毫托之壓力下具有1份矽烷對1.2份存於氫氣中的5%膦之比例,其中該結晶矽晶圓係在大約200攝氏度之溫度下。
- 如請求項1之方法,其中該第二摻雜非晶矽層係藉由HWCD使用矽烷與存於氫氣中之2.5%二硼烷之組合形成,其中該組合在大約70毫托之壓力下具有1份矽烷對5份存於氫氣中的2.5%二硼烷之比例,其中該結晶矽晶圓係在大約250攝氏度之溫度下。
- 如請求項1之方法,其進一步包含:在該第一摻雜非晶矽層上形成第一導電氧化物層;及在該第二摻雜非晶矽層上形成第二導電氧化物層。
- 如請求項18之方法,其中該第一導電氧化物層係藉由在 氧氣之存在下蒸發90%銦與10%錫合金而形成,其中該結晶矽晶圓係在大約165攝氏度之溫度下。
- 如請求項18之方法,其中該第一導電氧化物層係藉由濺鍍形成。
- 如請求項18之方法,其進一步包含:將第一複數個觸點施加於該第一導電氧化物;及將第二複數個觸點施加於該第二導電氧化物。
- 如請求項21之方法,其中該第一及第二複數個觸點係藉由於低於大約400攝氏度之溫度下沈積銀來施加。
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EP2257996B1 (en) | 2014-04-23 |
WO2009108163A1 (en) | 2009-09-03 |
US8076175B2 (en) | 2011-12-13 |
TW200937658A (en) | 2009-09-01 |
US8945976B2 (en) | 2015-02-03 |
EP2257996A1 (en) | 2010-12-08 |
US20120171806A1 (en) | 2012-07-05 |
US20090215218A1 (en) | 2009-08-27 |
WO2009108161A1 (en) | 2009-09-03 |
TW200937502A (en) | 2009-09-01 |
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