WO2015032241A1 - 集成旁路二极管的太阳电池及其制备方法 - Google Patents

集成旁路二极管的太阳电池及其制备方法 Download PDF

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Publication number
WO2015032241A1
WO2015032241A1 PCT/CN2014/081786 CN2014081786W WO2015032241A1 WO 2015032241 A1 WO2015032241 A1 WO 2015032241A1 CN 2014081786 W CN2014081786 W CN 2014081786W WO 2015032241 A1 WO2015032241 A1 WO 2015032241A1
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Prior art keywords
via hole
substrate
bypass diode
solar cell
type
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PCT/CN2014/081786
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English (en)
French (fr)
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刘冠洲
林桂江
毕京锋
熊伟平
安晖
吴志敏
宋明辉
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厦门市三安光电科技有限公司
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Publication of WO2015032241A1 publication Critical patent/WO2015032241A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a solar cell integrated with a bypass diode and a method of fabricating the same, and belongs to the technical field of semiconductor devices and processes.
  • the structure can be continually optimized to give it a broad prospect for efficiency improvement.
  • the multi-junction solar cell is very suitable for high-concentration conditions, and the multi-junction compound sun can be greatly reduced by concentrating. Battery module cost.
  • the solar cell chip with full back battery has simple positive and negative electrodes on the back side of the chip, which makes the assembly soldering simple, which can greatly reduce the packaging cost, reduce the package loss, and improve the overall efficiency of the module.
  • the silicon solar cell technology of the full back electrode is very mature, and the mature through silicon via can be utilized (
  • An object of the present invention is to provide a solar cell with integrated bypass diode and a preparation method thereof, which can save chip area, simplify process steps, and make packaging more convenient, and is very suitable for full back electrode. Efficient multi-junction solar cells for scale and miniaturization.
  • the present invention discloses a solar cell integrated with a bypass diode, comprising: a P-type substrate having at least one first via extending through the substrate; and an N-type diffusion layer formed in the a sidewall of the first via and extending toward a back surface of the P-type substrate; a metal structure filling the first via, wherein a portion directly contacting the N-type diffusion layer and the N-type diffusion layer a Schottky bypass diode, another portion as a conductive connection portion; a photoelectric conversion portion formed on the P-type substrate, having a second via hole penetrating the photoelectric conversion portion, and the first via hole Correspondingly, the second via hole is filled with a conductive material and is separated from the photoelectric conversion portion by an insulating layer; a front electrode is formed on a front surface of the photoelectric conversion portion, and passes through the first via hole and The second via is bowed to the back side of the substrate.
  • the substrate is a P-type substrate, and the substrate material is a semiconductor material capable of forming an N-type impurity region.
  • the metal structure is a multilayer structure including a direct contact of the sidewall, a metal layer forming a Schottky contact with the N-type diffusion layer, and a high conductivity formed on the metal surface of the Schottky contact layer. Metal layer.
  • the photoelectric conversion portion is a single-junction or multi-junction solar cell structure, and each of the junction cells has a structure of an N-type material and a P-type material.
  • the metal layer formed on the metal surface of the Schottky contact layer is a high conductivity metal.
  • the insulating layer is such that the metal in the via is isolated from the epitaxial layer.
  • a back surface of the substrate is provided with a patterned positive electrode and a negative electrode connected to the front electrode The N-type electrode of the pole and the bypass diode.
  • the front electrode is connected to the conductive connection portion in the first via hole through a conductive material in the second via hole, thereby leading to the back surface of the substrate.
  • the second via location coincides with the location of the first via and has a size equal to or slightly larger than the size of the first via on the substrate.
  • the present invention also discloses a method for fabricating a solar cell with integrated bypass diode, characterized in that it comprises the following steps: (1) providing a P-type substrate; (2) forming at least on the substrate a through hole first through hole; (3) forming an N-type diffusion layer on a sidewall of the first via hole and extending toward a back surface of the substrate; (4) filling the first via hole with a metal, Wherein the portion directly contacting the N-type diffusion layer forms a Schottky bypass diode with the N-type diffusion layer, and the other portion serves as a conductive connection portion; (5) forming a photoelectric conversion portion on the substrate; (6) Forming a second via hole on the photoelectric conversion portion and filling a conductive material at a position corresponding to the first via hole on the P-type substrate, wherein the conductive material is separated from the photoelectric conversion portion by an insulating layer; (7) Forming a front electrode on the photoelectric conversion portion, which passes through the first via hole and the second via hole to the
  • the method further includes the step (8) forming an N-type electrode of the Schottky bypass diode on the back surface of the substrate, a positive electrode of the battery, and a battery negative electrode connected to the front electrode.
  • the first via hole is filled with the first layer of metal material, and is subjected to high temperature treatment to form a Schottky contact with the N type diffusion layer.
  • the metal structure formed in the step (4) is a multilayer structure including a metal layer directly contacting the sidewall, forming a Schottky contact with the N-type diffusion layer, and being formed on the Schottky contact layer A high conductivity metal layer on the metal surface.
  • the front electrode is connected to the conductive connection portion in the first via hole through a conductive material in the second via hole, thereby leading to the back surface of the substrate.
  • the second via location coincides with the first via location and has a size equal to or slightly larger than the size of the conductive connection within the first via on the substrate.
  • the substrate material of the sidewall insulating layer avoids the problem that the via of the multi-junction solar cell and the via sidewall insulating layer are difficult to be formed, forming an N-type diffusion layer on the via sidewall of the P-type substrate, and utilizing
  • the metal in the via forms a Schottky contact with the via, thereby integrating the Schottky junction bypass diode with the via, which saves chip area, simplifies the process steps, and makes the package more convenient, which is very suitable for the full back electrode.
  • the solar cell is a highly efficient multi-junction solar cell chip package that is advantageous for scale and miniaturization.
  • FIG. 1 is a side cross-sectional view showing the structure of a full-back electrode solar cell integrated with a bypass diode according to the present invention, in which:
  • 001 front electrode; 002: insulating layer; 003: multi-junction solar cell structure epitaxial layer; 004: Si substrate; 005: high conductivity metal; 006: Schottky contact layer metal; 007: N-type diffusion Layer; 008: insulating protective layer; 009: negative electrode of battery; 010: N-type electrode of bypass diode; 011: positive electrode of battery.
  • the following embodiment discloses a solar cell integrated with a bypass diode, as shown in FIG. 1, comprising: a P-type single crystal Si substrate 004 having at least one first via extending through the substrate An N-type diffusion layer 007 is formed on a sidewall of the first via hole and extends toward a back surface of the P-type substrate; a multilayer metal structure filling the first via hole, wherein the Schottky contact layer metal 006 is directly in contact with the N-type diffusion layer 007, and constitutes a Schottky bypass diode, a high conductivity metal 005, formed on the surface of the Schottky contact layer metal 006, forming an ohmic contact therewith; a multi-junction solar cell structure epitaxial layer 003, formed on the P-type single crystal Si substrate 004, having a second via extending through the epitaxial layer 003 of the multi-junction solar cell structure, corresponding to the first via, the second pass
  • the hole is filled with a conductive material
  • a solar cell with a bypass diode can be obtained by the following steps:
  • the substrate used in this example is a P-type single crystal Si substrate 004, and at least one first via hole penetrating through the substrate is formed by laser etching, and thermal oxidation is performed on the front and back surfaces of the Si substrate 004.
  • the diffusion barrier layer such as SiO 2 is formed in a manner such that an N-type diffusion layer 007 is formed around the via hole of the first via sidewall and the back surface of the substrate by thermal diffusion, and is evaporated, plated or screen printed.
  • the hole is filled with a high conductivity metal 005 such as Cu or Ag, and is annealed at a high temperature to directly contact the surface of the high conductivity metal 005 which is in contact with the N type diffusion layer 007 to form a Schottky contact layer metal 006, and the upper and lower ends of the high conductivity metal 005 are used as a conductive connection to remove the diffusion barrier.
  • a high conductivity metal 005 such as Cu or Ag
  • a Ge buffer layer is grown on the Si substrate 004 by MBE, and a Ge bottom cell, an InGaAs cell, a GalnP top cell, and a highly cumbersome InGaAs ohmic contact layer are sequentially grown on the Ge buffer layer by MOCVD. Thereby, a multi-junction solar cell structure epitaxial layer 003 is formed.
  • a second via of the epitaxial layer is prepared by reactive ion etching in a mixed atmosphere of Ar, the position of which corresponds to the first via on the P-type substrate, and the diameter of the second via is slightly larger than that on the Si substrate First via diameter.
  • Electron beam evaporation is used to form an anti-reflection film on the front side of the solar cell, and photolithography is performed on the back side of the substrate.

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Abstract

一种集成旁路二极管的太阳电池及其制备方法，其特征在于：所述衬底的掺杂类型为P型，衬底上形成有光电转换部。所述衬底形成有至少一个贯穿衬底的过孔，在过孔侧壁及衬底背面的过孔周围形成N型扩散层，在过孔中填充金属，从而在过孔侧壁形成肖特基旁路二极管。光电转换部上的正面电极通过过孔中的填充金属连接至衬底背面。该方法在制备全背电极芯片的过程中集成了旁路二极管，芯片制备封装简单，有利于太阳电池的规模化应用。

Description

集成旁路二极管的太阳电池及其制备方法
[1] 技术领域
[2] 本发明涉及一种集成旁路二极管的太阳电池及其制备方法， 属半导体器件与工 艺技术领域。
[3] 背景技术
[4] 目前市场上大部分太阳电池为硅太阳电池， 作为第一代太阳电池， 其成本低， 制作简单， 得到了快速发展和广泛应用， 然而硅太阳电池存在一些难以克服的 缺点， 例如高纯硅的制备过程中会导致严重的环境污染问题、 硅电池的效率达 到了理论瓶颈难以继续提升， 整体效率偏低、 硅电池不适用于聚光使得成本下 降空间较小。 而近些年来， 作为第三代光伏发电技术的多结化合物太阳电池幵 始倍受关注， 其光电转化效率无论理论还是实际都是太阳能电池中最高的， 并 且通过优化子电池的数量和能带结构可以不断优化， 使其拥有广阔的效率提升 前景， 另外由于三五族材料良好的耐热能力， 使得多结化合物太阳电池十分适 合于高倍聚光条件， 通过聚光可大大降低多结化合物太阳电池模组成本。
[5] 采用全背电池的太阳电池芯片， 由于其正负电极都在芯片背面， 使得组件焊接 变得简单， 可大大降低封装成本， 降低封装损耗， 提高模组的整体效率。 目前 全背电极的硅太阳电池技术已经十分成熟， 可以利用成熟的贯穿硅过孔 （
Through-Silicon- Via ) 工艺技术或者全背电极硅太阳电池芯片制备工艺， 广泛应 用于工业化生产。 而多结化合物太阳电池由于其本身的结构特点， 还没有可行 性较高的全背电极方案。 较常见的 Ge/GaAs/GalnP三结太阳电池由于锗衬底机 械强度较弱， 绝缘层难以制备， 很难通过形成贯穿衬底的过孔的方式来形成全 背电极的锗基多结化合物太阳电池。
另一方面， 在太阳能电池的实际应用中， 彼此独立的太阳能电池往往需要串联 连接在一起形成阵列， 从而达到特定的输出功率来满足应用需求。 组件中每一 个单独的电池均将承受正向偏压， 但这其中就涉及到一个无法避免的问题： 当 所述电池中的任何一个因损坏或光照遮蔽， 被遮蔽的电池将被迫承受阵列中其 它电池产生的反向偏压和电流， 最终可能会永久性损坏该电池甚至导致组件的 失效。 因此， 以单个或多个电池为单位并联旁路二极管已成为各种类型太阳能 电池组件阵列中不可缺少的组成部分。 为了提高芯片集成度、 优化封装效率， 人们设计了很多种方式在太阳能电池芯片制备过程中集成旁路二极管， 但这些 方案有些需要牺牲芯片面积， 有些不适用于全背电极的多结太阳能电池， 而有 些芯片工艺较为复杂。
[7] 发明内容
[8] 本发明的目的是在于提供一种集成旁路二极管的太阳电池及其制备方法， 该结 构与工艺能够节省芯片面积， 简化工艺步骤， 使封装更为方便， 非常适用于全 背电极的高效多结太阳电池， 利于规模化和小型化。
[9] 为了达到上述技术方案， 本发明是按以下技术方案实现的：
[10] 本发明公幵了一种集成旁路二极管的太阳电池， 其特征在于： 包括 P型衬底， 至少具有一个贯穿所述衬底的第一过孔； N型扩散层， 形成于所述第一过孔的 侧壁并向所述 P型衬底的背面延伸； 金属结构， 填充所述第一过孔， 其中直接 接触所述 N型扩散层的部分与所述 N型扩散层构成肖特基旁路二极管， 另一部 分作为导电连接部； 光电转换部， 形成于所述 P型衬底之上， 具有贯穿所述光 电转换部的第二过孔， 其与所述第一过孔对应， 所述第二过孔内填充有导电材 料并通过一绝缘层与所述光电转换部实现隔离； 正面电极， 形成于所述光电转 换部的正面上， 并通过所述第一过孔和第二过孔弓 I至所述衬底的背面。
[11] 优选地， 所述衬底为 P型衬底， 衬底材料为能形成 N型惨杂区的半导体材料
[12] 优选地， 所述金属结构为多层结构， 包括侧壁直接接触、 与 N型扩散层形成肖 特基接触的金属层， 以及形成于肖特基接触层金属表面的高电导率的金属层。
[13] 优选地， 所述光电转换部为单结或多结的太阳电池结构， 每一结子电池的结构 均为上面为 N型材料、 下面为 P型材料。
[14] 优选地， 所述形成于肖特基接触层金属表面的金属层为高电导率金属。
[15] 优选地， 所述绝缘层使得过孔内金属与外延层隔离幵。
[16] 优选地， 所述衬底的背面设置有图形化的正电极、 与所述正面电极连接的负电 极以及旁路二极管的 N型电极。
[17] 优选地， 所述正面电极通过第二过孔中的导电材料与所述第一过孔中的导电连 接部连接， 从而引至所述衬底的背面。
[18] 优选地， 所述第二过孔位置与所述第一过孔的位置一致， 其尺寸等于或略大于 衬底上的第一过孔的尺寸。
[19] 本发明还公幵了上述集成旁路二极管的太阳电池的制备方法， 其特征在于： 包 括以下步骤： （1)提供一 P型衬底； （2)在所述衬底上形成至少一个贯穿的第一 过孔； （3)在所述第一过孔的侧壁形成 N型扩散层， 并向所述衬底背面延伸； (4)在所述第一过孔中填充金属， 其中直接接触所述 N型扩散层的部分与所述 N 型扩散层构成肖特基旁路二极管， 另一部分作为导电连接部； （5)在所述衬底上 形成光电转换部； （6)在所述光电转换部上形成第二过孔并填充导电材料， 其位 置与所述 P型衬底上的第一过孔相对应， 导电材料通过一绝缘层与所述光电转 换部实现隔离； （7)在所述光电转换部上形成正面电极， 其通过所述第一过孔和 第二过孔弓 I至所述衬底的背面。
[20] 优选地， 还包括步骤 （8 ) 在所述衬底背面形成肖特基旁路二极管的 N型电极 、 电池的正电极以及与所述正面电极连接的电池负电极。
[21] 优选地， 所述步骤 （4 ) 中在第一过孔中填充第一层金属材料， 并高温处理使 其与 N型扩散层形成肖特基接触。
[22] 优选地， 所述步骤 （4 ) 形成的金属结构为多层结构， 包括与侧壁直接接触、 与 N型扩散层形成肖特基接触的金属层， 以及形成于肖特基接触层金属表面的 高电导率的金属层。
[23] 优选地， 所述正面电极通过第二过孔中的导电材料与所述第一过孔中的导电连 接部连接， 从而引至所述衬底的背面。
[24] 优选地， 所述第二过孔位置与所述第一过孔位置一致， 其尺寸等于或略大于所 述衬底上第一过孔内的导电连接部的尺寸。
[25] 本发明的创新点及技术效果包括以下：
[26] 采用衬底和光电转换部上的过孔结构将太阳电池的正面电极引到衬底背面， 从 而实现全背电极的单结或多结太阳电池结构芯片， 通过选择较易制备过孔和过 孔侧壁绝缘层的衬底材料， 避免了多结化合物太阳电池的过孔以及过孔侧壁绝 缘层制备难的问题， 在 P型衬底的过孔侧壁形成 N型扩散层， 并利用过孔中金 属与其形成肖特基接触， 从而利用过孔集成了肖特基结的旁路二极管， 可节省 芯片面积， 简化工艺步骤， 使封装更为方便， 非常适用于全背电极的高效多结 太阳电池， 有利于规模化和小型化的高效多结太阳电池芯片封装。
[27] 附图说明
[28] 图 1为本发明一种集成旁路二极管的全背电极太阳电池结构侧面剖面示意图， 图中：
[29] 001： 正面电极； 002 : 绝缘层； 003 : 多结太阳电池结构外延层； 004 : Si 衬底； 005 : 高电导率金属； 006 : 肖特基接触层金属； 007 : N型扩散层； 008： 绝缘保护层； 009 : 电池的负电极； 010 : 旁路二极管的 N型电极； 011 ： 电池的正电极。
[30] 具体实施方式
[31] 下面结合实施例对本发明作进一步描述， 但不应以此限制本发明的保护范围。
[32] 实施例
[33] 下面实施例公幵了一种集成旁路二极管的太阳电池， 如图 1所示， 包括： P型 单晶 Si衬底 004， 其至少具有一个贯穿所述衬底的第一过孔； N型扩散层 007 ， 形成于所述第一过孔的侧壁并向所述 P型衬底的背面延伸； 多层金属结构， 填充所述第一过孔， 其中肖特基接触层金属 006直接与所述 N型扩散层 007接 触， 并构成肖特基旁路二极管， 高电导率金属 005， 形成于肖特基接触层金属 006表面， 与其形成欧姆接触； 多结太阳电池结构外延层 003， 形成于所述 P型 单晶 Si衬底 004之上， 具有贯穿所述多结太阳电池结构外延层 003的第二过孔 ， 其与所述第一过孔对应， 所述第二过孔内填充有导电材料并通过 SiNx绝缘层 002与所述多结太阳电池结构外延层 003实现隔离； 形成于所述多结太阳电池结 构外延层 003的第二过孔侧壁； 正面电极 001， 形成于所述多结太阳电池结构 外延层 003的正面上， 并通过所述第一过孔和第二过孔引至所述衬底的背面； Si02绝缘保护层 008， 形成于在所述衬底的背面， 并露出电极窗口； 肖特基旁 路二极管的 N型电极 010、 电池的正电极 011以及与所述正面电极连接的负电 极 009， 形成于所述衬底背面的电极窗口。
[34] 以下通过实施例对本发明所述的一种集成旁路二极管的太阳电池的制备方法进 行具体说明：
[35] 如图 1所示， 一种集成旁路二极管的太阳电池， 可选择如下步骤获得：
[36] ( 1 ) 本实例采用的衬底为 P型单晶 Si衬底 004， 采用激光蚀刻的方法形成 至少一个贯穿衬底的第一过孔， 在 Si衬底 004正面与背面采用热氧化等方式形 成 Si02等扩散阻挡层， 然后采用热扩散的方法在第一过孔侧壁以及衬底背面的 过孔周围形成 N型扩散层 007， 采用蒸发、 电镀或者丝网印刷等方式在过孔中 填充 Cu或 Ag等高电导率金属 005， 经高温退火， 直接接触 N型扩散层 007接 触的高电导率金属 005表面形成肖特基接触层金属 006， 高电导率金属 005的 上下端作为导电连接部， 去除扩散阻挡层。
[37] ( 2 ) 用 MBE方式在 Si衬底 004上生长 Ge缓冲层， 用 MOCVD方式在 Ge 缓冲层上依次生长 Ge底电池、 InGaAs中电池、 GalnP顶电池以及高惨杂 InGaAs欧姆接触层， 从而形成多结太阳电池结构外延层 003。
[38] ( 3 ) 从该外延片正面对多结太阳电池结构外延层 003进行光刻， 并通过 Cl2
/Ar混合气体氛围下的反应离子刻蚀制备出外延层第二过孔， 其位置与所述 P型 衬底上的第一过孔相对应， 第二过孔直径稍大于 Si衬底上的第一过孔直径。
[39] ( 4 ) 采用 PECVD方式在外延层第二过孔侧壁上形成一层 SiNx绝缘层 002
， 并通过光刻和腐蚀的方法去除第二过孔底部的 SiNx绝缘层， 露出 Si衬底过孔 中的贯穿高电导率金属但不露出硅材料。
[40] ( 5 ) 从该外延片正面进行光刻， 蒸镀金属导电材料并剥离形成图形化正面电 极 001， 金属导电材料通过 SiNx绝缘层 002与所述光电转换部实现隔离， 金属 导电材料厚度应大于外延层厚度， 使得正面电极 001通过外延层第二过孔与 Si 衬底第一过孔引至所述衬底的背面， 使得金属电极 001与贯穿高电导率金属 005 相连， 腐蚀掉未被正面电极覆盖的高惨杂 InGaAs欧姆接触层。
[41] ( 6 ) 用电子束蒸发的方法在太阳电池正面形成减反膜， 在衬底背面进行光刻
， 腐蚀掉贯穿金属上和背电极区域的 Si02绝缘保护层 008， 蒸镀并剥离形成肖 特基旁路二极管的 N型电极 010、 电池的正电极 011以及与所述正面电极连接 的电池的负电极 009， 其中电池的负电极兼做旁路二极管的 P型电极， 最后对 芯片进行快速热退火使得金属与半导体相熔合形成欧姆接触。

Claims

权利要求书
[1] 1.集成旁路二极管的太阳能电池， 包括：
P型衬底， 至少具有一个贯穿所述衬底的第一过孔；
N型扩散层， 形成于所述第一过孔的侧壁并向所述 P型衬底的背面延伸； 金属结构， 填充所述第一过孔， 其中直接接触所述 N型扩散层的部分与所 述 N型扩散层构成肖特基旁路二极管， 另一部分作为导电连接部； 光电转换部， 形成于所述 P型衬底之上， 具有贯穿所述光电转换部的第二 过孔， 其与所述第一过孔对应， 所述第二过孔内填充有导电材料并通过一 绝缘层与所述光电转换部实现隔离；
正面电极， 形成于所述光电转换部的正面上， 并通过所述第一过孔和第二 过孔引至所述衬底的背面。
[2] 如权利要求 1所述的集成旁路二极管的太阳电池， 其特征在于： 所述 P型 衬底的材料为能形成 N型惨杂区的半导体材料。
[3] 如权利要求 1所述的一种集成旁路二极管的太阳电池， 其特征在于： 所述 金属结构为多层结构， 包括侧壁直接接触、 与 N型扩散层形成肖特基接触 的金属层， 以及形成于肖特基接触层金属表面的高电导率的金属层。
[4] 如权利要求 1所述的集成旁路二极管的太阳电池， 其特征在于： 所述光电 转换部为单结或多结的太阳电池结构， 每一结子电池的结构均为上面为 N 型材料、 下面为 P型材料。
[5] 如权利要求 1所述的集成旁路二极管的太阳电池， 其特征在于： 所述正面 电极通过第二过孔中的导电材料与所述第一过孔中的导电连接部连接， 从 而引至所述衬底的背面。
[6] 如权利要求 1所述的集成旁路二极管的太阳电池， 其特征在于： 所述衬底 的背面设置有图形化的正电极、 与所述正面电极连接的负电极以及旁路二 极管的 N型电极。
[7] 如权利要求 1所述的集成旁路二极管的太阳电池， 其特征在于： 所述第二 过孔位置与所述第一过孔的位置一致， 其尺寸等于或略大于衬底上的第一 过孔的尺寸。
[8] 集成旁路二极管的太阳电池的制备方法， 包括以下步骤：
提供一 P型衬底； 在所述衬底上形成至少一个贯穿的第一过孔；
在所述第一过孔的侧壁形成 N型扩散层， 并向所述衬底背面延伸； 在所述第一过孔中填充金属， 其中直接接触所述 N型扩散层的部分与所述 N型扩散层构成肖特基旁路二极管， 另一部分作为导电连接部； 在所述衬底上形成光电转换部；
在所述光电转换部上形成第二过孔并填充导电材料， 其位置与所述 P型衬 底上的第一过孔相对应， 导电材料通过一绝缘层与所述光电转换部实现隔 离；
在所述光电转换部上形成正面电极， 其通过所述第一过孔和第二过孔引至 所述衬底的背面。
[9] 如权利要求 8所述的集成旁路二极管的太阳电池的制备方法， 其特征在于
： 还包括步骤 （8 ) 在所述衬底背面形成肖特基旁路二极管的 N型电极、 电池正电极以及与所述正面电极连接的电池负电极。
[10] 如权利要求 8所述的集成旁路二极管的太阳电池的制备方法， 其特征在于
： 所述步骤 （4 ) 中在第一过孔中填充第一层金属材料， 并高温处理使其 与 N型扩散层形成肖特基接触。
[11] 如权利要求 8所述的集成旁路二极管的太阳电池的制备方法， 其特征在于
： 所述步骤 （4 ) 形成的金属结构为多层结构， 包括与侧壁直接接触、 与
N型扩散层形成肖特基接触的金属层， 以及形成于肖特基接触层金属表面 的高电导率的金属层。
[12] 如权利要求 11所述的集成旁路二极管的太阳电池的制备方法， 其特征在于
： 所述正面电极通过第二过孔中的导电材料与所述第一过孔中的导电连接 部连接， 从而引至所述衬底的背面。
[13] 如权利要求 11所述的集成旁路二极管的太阳电池的制备方法， 其特征在于
： 所述第二过孔位置与所述第一过孔位置一致， 其尺寸等于或略大于所述 衬底上第一过孔内的导电连接部的尺寸。
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