WO2017067413A1 - 太阳能电池片、其制备方法及其组成的太阳能电池组 - Google Patents

太阳能电池片、其制备方法及其组成的太阳能电池组 Download PDF

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WO2017067413A1
WO2017067413A1 PCT/CN2016/101975 CN2016101975W WO2017067413A1 WO 2017067413 A1 WO2017067413 A1 WO 2017067413A1 CN 2016101975 W CN2016101975 W CN 2016101975W WO 2017067413 A1 WO2017067413 A1 WO 2017067413A1
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solar cell
layer
type
array
contact
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PCT/CN2016/101975
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English (en)
French (fr)
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兰立广
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北京汉能创昱科技有限公司
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Priority to KR1020187013267A priority Critical patent/KR20180067620A/ko
Priority to US15/769,074 priority patent/US20180309006A1/en
Priority to JP2018521206A priority patent/JP2018531522A/ja
Priority to DE112016004766.5T priority patent/DE112016004766T5/de
Publication of WO2017067413A1 publication Critical patent/WO2017067413A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
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    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of solar cell technology, and more particularly to a solar cell sheet and a solar cell group connected in series therewith, and to a method of fabricating a solar cell sheet.
  • Solar energy is an inexhaustible source of energy. It is estimated that the amount of solar energy projected to the Earth during the year is equivalent to the heat generated by 137 trillion tons of standard coal, which is about 20,000 times more than the energy generated by various energy sources in the world in one year. In China, about two-thirds of the area can make better use of solar energy resources, and solar power generation is not limited by geography. It can realize the modularization of photovoltaic system, install it near the power consumption, and reduce it in areas far away from the power grid. Transmission and distribution costs increase the reliability of power supply facilities. At present, thin-film solar cells can efficiently convert solar energy into electrical energy because the material of the light-absorbing layer is small, and the inherent material properties are only a few micrometers.
  • a semiconductor heterojunction solar cell is composed of two semiconductor materials with different energy band structures.
  • the band can be bent or abrupt at the contact surface to form a built-in electric field, which is a carrier generated by the photovoltaic effect in the semiconductor. Separation provides the conditions.
  • semiconductor heterojunction solar cells mainly include amorphous silicon/monocrystalline silicon heterojunction cells, InGaP/GaAs heterojunction cells, CdS/CdTe heterojunction cells, organic heterojunctions, and AlGaAs/GaAs heterojunctions. Battery, etc.
  • the epitaxial layer lift-off technique (ELO) by HF acid is applied to the separation of the GaAs epitaxial layer from the substrate, and the contact of the n-type doped base layer with the p+-type doped emitter layer produces a p-n layer.
  • ELO epitaxial layer lift-off technique
  • an electric field built into the heterojunction can move the hole to the p+-type doping side and the electrons to the n-type doping side.
  • the displacement of the photo-generated carriers causes a potential difference between the p+-doped side and the n-type doped side to form a photovoltaic effect.
  • Gallium arsenide GaAs thin film solar cell is the most efficient photoelectric conversion cell in the current thin film battery, and has the characteristics of light weight, flexibility, etc., and has extremely wide application prospects, because of its high efficiency, under the condition of year-on-year. It has high output power in less light-receiving area and can be applied to consumer battery products.
  • a metal organic chemical vapor deposition (MOCVD) method is mainly used to deposit a photovoltaic layer on a GaAs substrate to form a photovoltaic device, and then an epitaxial layer lift-off technique (ELO) is used to strip the battery layer, and a plurality of photovoltaic devices are N.
  • the electrode contacts are interconnected and the P+ electrode contacts are interconnected to form a photoelectric conversion module having a higher current output, or the N-type contacts are interconnected with the P-type contacts to form a photoelectric conversion module having a higher output voltage.
  • the process time and the amount of raw materials used are increased; at the same time, excessive exposure of the GaAs material layer results in an increase in dark current, and in order to avoid contact of the base electrode with the P-type AlGaAs, a larger base electrode groove is required, which results in A further increase in dark current. Therefore, a smaller base electrode groove is required, and a smaller electrode groove results in difficulty in preparation of the groove sidewall passivation layer and difficulty in preparation of the base electrode.
  • the technical problem to be solved by the present invention is that the N-type contact of the existing solar cell has a cylindrical shape, which causes difficulty in forming the side cladding passivation layer, thereby providing a solar cell chip and connecting the solar cell chip in series.
  • the connected solar battery group solves the problem that the side facade passivation layer is difficult to form by changing the shape of the N-type contact of the solar cell sheet, reduces the process difficulty, and reduces the use of the passivation material.
  • a solar cell panel comprising a stacked window layer, a base layer, an emitter layer and a passivation layer, wherein the solar cell sheet is provided with an N-type contact array and a P-type contact array arranged at intervals, the N a type of contact penetrating the emitter layer and the passivation layer, the P-type contact penetrating the passivation layer;
  • the solar cell sheet further includes an interface layer disposed between the emitter layer and the passivation layer, the N-type contact penetrating the emitter layer, the interface layer, and the passivation layer to make the base layer Exposed, the P-type contact penetrates the passivation layer to expose the interface layer.
  • the open end of the N-shaped contact has a cross-sectional area greater than its bottom cross-sectional area.
  • the N-type contact is of a rounded table type.
  • the acute angle ⁇ between the side wall of the N-type contact and the horizontal plane is: 5° ⁇ ⁇ ⁇ 85°.
  • a sidewall passivation layer formed by extending the passivation layer is disposed outside the sidewall of the N-type contact.
  • the adjacent N-type contact array and the P-type contact array constitute a contact array group, the number of the contact array groups is an even number, and the N-type contact of the contact array group disposed on one side of the center line of the solar cell sheet
  • the dot array and the P-type contact array are respectively arranged in mirror image with the P-type contact array and the N-type contact array of the contact array group on the other side.
  • the adjacent N-type contact array and the P-type contact array constitute a contact array group, the number of the contact array groups is an odd number, and the N-type contact array and the P-type are disposed on one side of the center line of the intermediate contact array group Contact array and contact array group on the other side
  • the P-type contact array and the N-type contact array are mirrored.
  • the N-type contact array and the P-type contact array are equally spaced.
  • the solar cell sheet is a gallium arsenide thin film solar cell.
  • the solar cell sheet further includes an anti-reflective coating disposed on a side of the window layer away from the base layer.
  • a solar cell module connected in series comprising at least two of the solar cell sheets, wherein an N-type contact array and a P-type contact array adjacent to the solar cell sheet are electrically connected to form a series connection.
  • the N-type contact array and the P-type contact array adjacent to the position of the solar cell sheet are electrically connected through the electrode connection lines to form a series connection.
  • Each of the solar cell sheets and the solar cell sheets adjacent thereto are disposed in anti-parallel.
  • the reverse parallel arrangement means that adjacent solar cells of the solar cell sheet are obtained by rotating the solar cell sheet by 180°, and the two may be aligned or non-aligned.
  • the N-type contact array of the solar cell sheet and the P-type contact array of the adjacent solar cell sheet are electrically conducted through the electrode connection line, and the P-type contact array and the N-type contact of the adjacent solar cell sheet
  • the dot array is electrically conducted through the electrode connection line.
  • a method for preparing a solar cell sheet comprising the steps of:
  • S1 sequentially preparing a buffer layer, a sustained release layer, a window layer, a base layer, an emitter layer and an interface layer on the substrate;
  • etching forms a plurality of inverted truncated-type grooves extending through the interface layer and the emitter layer, the bottom of the truncated-type groove is a base layer, and the side of the truncated-type groove
  • the acute angle ⁇ between the wall and the horizontal plane is: 5° ⁇ ⁇ ⁇ 85°;
  • step S3 preparing a passivation layer on the basis of step S2, masking the position of the N-type contact inside the rounded-type groove by masking process, thereby forming a passivation layer above the interface layer and on the side of the rounded-type groove Forming a sidewall passivation layer, and forming a rounded-type base electrode recess between the sidewall passivation layer and the base layer;
  • etching forms a plurality of emitter electrode grooves distributed in the array through the passivation layer, and the bottom of the emitter electrode groove is an interface layer;
  • the step S2 is: etching the round table type groove by dry etching or wet isotropic etching;
  • the step S4 is: etching the emitter electrode recess by dry etching or wet etching;
  • the step S6 is: after peeling off the substrate, the buffer layer and the sustained release layer, preparing an anti-reflection coating on a side of the window layer away from the base layer.
  • the optional step S3 is: forming a passivation layer over the interface layer and forming a sidewall on the sidewall of the rounded-type groove Passivation layer, then etching to remove the passivation layer at the bottom of the rounded-type groove, exposing the base layer for preparation of the base electrode, the sidewall passivation layer and the base layer A round table type base electrode groove is formed therebetween.
  • the acute angle ⁇ between the side wall of the contact and the horizontal plane is: 5° ⁇ ⁇ ⁇ 85°. Since the side surface of the groove having the rounded table shape and the base layer have a certain inclination angle, the preparation of the sidewall passivation layer can be significantly reduced, and at the same time, the base electrode of the round table type prepared thereby can be reduced by the base electrode concave
  • the surface defects caused by the preparation of the grooves are increased, the dark current of the battery is lowered, and the efficiency of the battery is improved.
  • the solar cell sheet of the present invention has the same structure, and the electrode contact (P-type contact) of the solar cell sheet is connected to the solar cell shaped contact (N-type contact) adjacent thereto when connected.
  • the N-type contact is connected with its adjacent solar cell shaped contact (P-type contact) to form a series connection of several GaAs photovoltaic devices, and the fabrication method avoids the preparation of two types of electrode contact layouts.
  • the GaAs photovoltaic device unit has the characteristics of simple structure and easy implementation.
  • FIG. 1 is a schematic structural view of a solar cell sheet according to the present invention.
  • Figure 2 is a partial enlarged view of the portion I of Figure 1;
  • Figure 3 is a partial enlarged view of the portion II of Figure 1;
  • FIG. 4 is a schematic structural view of a solar cell sheet
  • FIG. 5 is a schematic structural view of another embodiment of a solar cell sheet
  • FIG. 6 is a schematic structural view of a solar cell module in a manner of being placed
  • Figure 7 is a cross-sectional view taken along line A-A of Figure 6;
  • Figure 8 is a partially enlarged schematic view of a portion I of Figure 7;
  • Figure 9 is a partially enlarged schematic view of a portion II of Figure 7;
  • Figure 10 is a schematic view showing a process of preparing a solar cell sheet
  • the solar cell of the present invention comprises a window layer 4, a base layer 5, an emitter layer 6 and a passivation layer 8, and the solar cell sheets are provided with an array of N-type contacts 12 arranged at intervals. And an array of P-type contacts 13 extending through the emitter layer 6 and the passivation layer 8, the P-type contacts 13 extending through the passivation layer 8.
  • the solar cell sheet further includes an interface layer 7 disposed between the emitter layer 6 and the passivation layer 8, and the N-type contact 12 penetrates the emitter layer 6 and the interface layer. 7 and the passivation layer 8 expose the base layer 5, and the P-type contact 13 penetrates the passivation layer 8 to expose the interface layer 7.
  • the cross-sectional area of the open end of the N-type contact 12 is greater than the bottom cross-sectional area thereof, preferably a round table type; the acute angle ⁇ between the side wall of the N-type contact 12 and the horizontal plane is: 5° ⁇ ⁇ ⁇ 85 °.
  • a sidewall passivation layer 10 extending from the passivation layer 8 is disposed outside the sidewall of the N-type contact 12.
  • the array of adjacent N-type contacts 12 and the array of P-type contacts 13 constitute a contact array group (shown in the dashed box in the figure), and the number of the contact array groups may be an even number. It can also be an odd number.
  • the contact array group shown in FIG. 4 is an even number, and the array of N-type contacts 12 and the array of P-type contacts 13 of the contact array group disposed on one side of the center line of the solar cell sheet are respectively connected to the contacts on the other side.
  • the array of P-type contacts 13 and the array of N-type contacts 12 of the array are mirrored. Specifically, the solar cell center line in FIG.
  • the contact array group shown in FIG. 5 is an odd number, and the array of N-type contacts 12 and the array of P-type contacts 13 disposed on one side of the center line of the intermediate contact array group and the contact array group on the other side respectively
  • the array of P-type contacts 13 and the array of N-type contacts 12 are mirrored.
  • the array of N-type contacts 12 of the first contact array group and the P-type contact 13 of the fifth contact array group are mirror-arranged, and the P-type contacts of the first contact array group
  • the array of N-type contacts 12 of the array of 13 and fifth contact arrays is mirrored; the array of N-type contacts 12 of the second set of contact arrays and the array of P-type contacts 13 of the fourth set of contact arrays Mirrored, the array of P-type contacts 13 of the second contact array group and the array of N-type contacts 12 of the fourth contact array group are mirror-arranged, and the N-type of the third contact array group
  • the array of contacts 12 and the array of P-type contacts 13 are mirrored.
  • the array of N-type contacts 12 and the array of P-type contacts 13 may be arranged at non-equal intervals, or may be equally spaced, preferably at equal intervals.
  • the solar cell sheet of the invention is a gallium arsenide thin film solar cell.
  • the series-connected solar cell module of the present invention comprises at least two solar cell sheets as shown in FIG. 4, and the array of N-type contacts 12 and the array of P-type contacts 13 adjacent to the positions of the solar cell sheets are electrically connected to form a series connection. As shown in Figure 6. Four schematic diagrams of the series connection of solar cells shown in FIG. 4 are shown.
  • the array of N-type contacts 12 and the array of P-type contacts 13 corresponding to the positions of the solar cell sheets are electrically connected through the electrode connection lines 14 to form a series connection.
  • the array of N-type contacts 12 of the solar cell sheet and the array of P-type contacts 13 of the solar cell sheets adjacent thereto are electrically conducted through the electrode connection line 14, and the array of P-type contacts 13 is adjacent thereto
  • the array of N-type contacts 12 of the solar cell is electrically conducted through the electrode connection line 14.
  • the series connected solar cell module includes four solar cell sheets having the same structure, and the solar cell numbers from the top to the bottom are the first solar cell sheet, the second solar cell sheet, and the first The three solar cells, the fourth solar cell, and of course, more solar cells may be included as needed.
  • the solar cells of the even rows constituting the solar cell modules are placed in the same manner, and constitute an odd number of the solar cell modules.
  • the rows of solar cells are placed in the same manner, and the even rows of solar cells are rotated by 180° compared to the odd rows of solar cells.
  • each of the solar cell sheets and the solar cell sheets adjacent thereto are disposed in anti-parallel, the array of N-type contacts 12 of the solar cell sheet and the solar cell sheets adjacent thereto
  • the P-type contact 13 array is electrically conducted through the electrode connection line 14, and the array of P-type contacts 13 and the array of N-type contacts 12 of the adjacent solar cell sheets are electrically conducted through the electrode connection line 14.
  • the first solar cell sheet and the third solar cell sheet are placed in the same manner, and the second solar cell sheet and the fourth solar cell sheet are placed in the same manner, and the first solar cell sheet is placed. After that, the second solar cell sheet is rotated 180° in parallel with the first solar cell sheet and aligned at both ends.
  • the first solar cell sheet and the second solar cell sheet are arranged in a reverse parallel direction.
  • the array of N-type contacts 12 of the first solar cell sheet and the array of P-type contacts 13 of the second solar cell sheet are on the same straight line, and the array of P-type contacts 13 of the first solar cell sheet and the first The array of N-type contacts 12 of the two solar cell sheets are located on the same straight line, respectively connecting the two through the electrode connection line 14, completing the series connection of the first solar cell sheet and the second solar cell sheet; and so on, the third and fourth The solar cell is connected until the tandem connection of all the solar cells is completed.
  • the array of N-type contacts 12 of the invention refers to a column (or row) of a plurality of contacts 12 of N-type
  • the array of P-type contacts 13 refers to a plurality of contacts 13 of P-type.
  • the method for preparing the above solar cell sheet comprises the following steps:
  • a buffer layer 2 on the substrate 1 depositing a GaAs buffer layer 2 on the GaAs substrate 1 by metal organic chemical vapor deposition (MOCVD), wherein the structure of the buffer layer 2 may be One or more layers of structure, the buffer layer functions to provide an intermediate dielectric layer between the GaAs substrate 1 and the final photoelectric conversion unit semiconductor, thereby reducing lattice mismatch when forming various epitaxial layers
  • MOCVD metal organic chemical vapor deposition
  • the buffer layer functions to provide an intermediate dielectric layer between the GaAs substrate 1 and the final photoelectric conversion unit semiconductor, thereby reducing lattice mismatch when forming various epitaxial layers
  • the resulting defect center and lattice stress affect epitaxial growth of epitaxial layers of various lattice structures, such as GaAs with a thickness range of approximately 150 nm to 250 nm
  • the buffer layer 2 can be applied to photovoltaic cells based on various doping structures of GaAs;
  • Deposition of AlAs sustained release layer 3 deposition of AlAs sustained release layer 3 on GaAs buffer layer 2, including but not limited to AlAs epitaxial material, having a thickness of between about 5 nm and 15 nm, such a thin sustained release
  • the main function of the layer 3 is as a sacrificial layer, and an HF acid wet etching technique can be employed to separate the epitaxial layer deposited on the sustained release layer from the buffer layer 2 and the GaAs substrate 1;
  • the deposition process of the window layer 4 a metal organic chemical vapor deposition (MOCVD) method is used to deposit an AlGaAs semiconductor layer having a thickness of 10 nm to 40 nm in the AlAs sustained release layer 3, wherein the ratio of Al:Ga is between 0.2:0.8 and 0.3: Between 0.7, this transparent window layer allows photons to pass directly through without absorption;
  • MOCVD metal organic chemical vapor deposition
  • the deposition process of the base layer 5 depositing an n-type III-V compound material gallium arsenide (GaAs) on the window layer 4, and the base layer 5 GaAs layer may be a single crystal structure or an n-type doping method, wherein The doping concentration of the n-type doped base layer 5 may be in the range of about 1 ⁇ 10 16 cm -3 to 1 ⁇ 10 19 cm -3 , for example, 5 ⁇ 10 17 cm -3 , and the base layer The thickness is in the range of 400 nm to 4000 nm;
  • the emitter layer 6 preparing an emitter layer 6 over the base layer 5 by a metal organic chemical vapor deposition (MOCVD) method, wherein the emitter layer 6 comprises a heterojunction structure with the base layer 5
  • MOCVD metal organic chemical vapor deposition
  • the emitter layer 6 comprises a heterojunction structure with the base layer 5
  • Any suitable III-V compound semiconductor, such as the base layer is a GaAs material then the emitter layer 6 is formed as an AlGaAs layer and is heavily doped with P type, and the doping concentration can be about 1 ⁇ 10 17 cm - 3 to 1 ⁇ 10 20 cm -3 , for example, 5 ⁇ 10 18 cm -3 , and the thickness of the emissive layer is between 150 nm and 450 nm, for example, 300 nm, so that the base layer 5 and the emitter layer 6 form photoelectric absorption Floor;
  • MOCVD metal organic chemical vapor deposition
  • an interface layer 7 is prepared over the emitter layer 6 by a metal organic chemical vapor deposition (MOCVD) method, wherein the interface layer 7 and the emitter layer are both AlGaAs layers, and the interface layer 7 is
  • MOCVD metal organic chemical vapor deposition
  • the interface layer 7 and the emitter layer are both AlGaAs layers, and the interface layer 7 is
  • the P+ type is heavily doped, and the doping concentration may be in the range of about 5 ⁇ 10 17 cm -3 to 5 ⁇ 10 20 cm -3 , for example, 1 ⁇ 10 19 cm -3 , and the purpose of P+ type heavy doping may be helpful.
  • Forming an ohmic contact, and the thickness of the interface layer 7 is between 100 nm and 400 nm, for example 200 nm thickness;
  • S2 preparing a rounded-table groove; using a dry etching or a wet isotropic etching method, etching a plurality of array-distributed rounded-table grooves through the interface layer 7 and the emitter layer 6
  • the bottom of the truncated trough type groove is the base layer 5, and the acute angle ⁇ between the side wall of the round table type groove and the horizontal plane is: 5° ⁇ ⁇ ⁇ 85°;
  • Preparation process of passivation layer 8 using any suitable passivation process, such as chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition, masking the N-type inside the rounded groove
  • the position of the contact 12 is such that a passivation layer 8 is formed over the interface layer 7 and a sidewall passivation layer 10 is formed on the rounded-type groove sidewall
  • the passivation layer 8 and the sidewall passivation layer 10 may include any Conductive materials, including but not limited to silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), tantalum oxide (TaO x ), zinc sulfide (ZnS) or a plurality of stacked structures; a rounded-type base electrode recess formed between the sidewall passivation layer 10 and the base layer 5;
  • a passivation layer 8 may also be formed over the interface layer 7 and a sidewall passivation layer 10 may be formed on the sidewall of the round mesa groove, and then Etching etching to remove the passivation layer at the bottom of the rounded-type groove, exposing the base layer 5 to form the rounded-type base electrode groove;
  • N-type contact 12 and P can be made of a suitable conductive material of a metal or metal alloy and should not be pierced into the semiconductor layer of the optoelectronic device during fabrication. Furthermore, the material of the N-type contacts can preferably be applied at relatively low metallization process temperatures (eg, between 150 ° C and 200 ° C), for example, because palladium does not react with GaAs, then N-type contacts 12 and P
  • the contact 13 can be composed of a palladium/ruthenium (Pd/Ge) alloy.
  • a GaAs photovoltaic device unit can be formed; the preparation methods of the N-type contact 12 and the P-type contact 13 include, but are not limited to, vacuum evaporation via a photoresist, photolithography, screen printing, sputtering, and the like. Deposition is performed at the positions of the N-type contact 12 and the P-type contact 13. These methods all relate to a system in which portions of the contacts are not protected.
  • S6 Stripping process of GaAs photovoltaic device unit: HF acid wet etching technology can be used to separate the epitaxial layers deposited on the sustained release layer from the buffer layer 2 and the GaAs substrate 1 to form a GaAs photovoltaic device.
  • the unit, anti-reflective coating 15 is disposed on the window layer 4 as an anti-reflective AR coating comprising any material that allows light to pass through and prevents light from reflecting on its surface, including magnesium fluoride (MgF 2 ), silicon dioxide.
  • MgF 2 magnesium fluoride
  • SiO 2 zinc sulfide
  • TiO 2 titanium dioxide
  • SiN silicon nitride
  • the AR coating can be applied to the window layer 4 by any suitable method, such as sputtering.
  • the window layer 4 may be roughened or textured by wet etching or dry etching before the anti-reflective coating is applied.
  • the layers can have different refractive indices
  • some photons are according to Snell's law If the incident angle is too high, more incident photons can be transmitted into the window layer 4 without being reflected at the interface between the AR coating and the window layer 4, thereby increasing the photon transmittance.

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Abstract

一种太阳能电池片，包括堆叠设置的窗口层（4）、基极层（5）、发射极层（6）和钝化层（8），太阳能电池片上设有间隔设置的N型触点阵列（12）和P型触点阵列（13），N型触点贯穿发射极层和钝化层，P型触点贯穿钝化层；N型触点开口端的横截面积大于其底部横截面积。采用该太阳能电池片串联连接的太阳能电池组，通过改变太阳能电池片的N型触点形状解决了侧立面钝化层难以形成的问题，降低了工艺难度，减少了钝化材料的使用。

Description

太阳能电池片、其制备方法及其组成的太阳能电池组
相关申请
本发明申请要求2015年10月19日申请的，申请号为201510679909.9，名称为“一种太阳能电池片、其制备方法及其组成的太阳能电池组”的中国专利申请的优先权，在此将其全文引入作为参考。
技术领域
本发明涉及一种太阳能电池技术领域，更具体地讲涉及一种太阳能电池片及由其串联连接的太阳能电池组，本发明还涉及太阳能电池片的制备方法。
背景技术
太阳能是一种取之不尽、用之不竭的能量来源。据估算，一年之中投射到地球的太阳能，其能量相当于137万亿吨标准煤所产生的热量，大约为目前全球一年内利用各种能源所产生能量的两万多倍。在我国，约有2/3的地区可以较好利用太阳能资源，并且太阳能发电不受地域的限制，可以实现光伏系统模块化，安装在靠近电力消耗的地方，并可在远离电网的地区，降低输电和配电成本，增加供电设施的可靠性。目前，薄膜太阳能电池由于光吸收层用料少，其内在材料特性只需几个微米就可以将太阳光能有效地转换成电能。
半导体异质结太阳能电池是由两种能带结构不相同的半导体材料构成，在接触面上能带发生弯曲或突变，从而形成内建电场，为光生伏特效应在半导体中产生的载流子的分离提供了条件。因半导体材料种类繁多，所以构成异质结太阳能电池的材料也有多种选择。目前，半导体异质结太阳能电池中主要包括非晶硅/单晶硅异质结电池，InGaP/GaAs异质结电池，CdS/CdTe异质结电池，有机体异质结，AlGaAs/GaAs异质结电池等。由于利用HF酸实现的外延层剥离技术(ELO)应用于GaAs外延层与基底的分离，而n型掺杂基极层与p+型掺杂发射极层的接触产生p-n层。当光在p-n层附近被吸收以产生电子空穴对时，在异质结内建电场可使空穴移动至p+型掺杂侧且使电子移动至n型掺杂侧。光生载流子的位移导致p+型掺杂侧与n型掺杂侧间形成电势差，形成光生伏特效应。砷化镓GaAs薄膜太阳能电池是目前的薄膜电池中光电转换效率最高的电池，且具有质量轻、可柔性化等特点，具有极其广泛的应用前景，因其具有效率高的特点，同比条件下可在较少受光面积下具有高的输出功率，可应用于消费类电池产品。
目前，主要采用金属有机物化学气相沉积(MOCVD)的方法在GaAs基片上沉积电池层形成光伏器件，然后采用外延层剥离技术(ELO)将电池层剥离，并将数个光伏器件的N 型电极触点进行互联及P+型电极触点进行互联，形成具有较高电流输出的光电转换模块，或者将N型触点与P型触点互联，形成具有较高输出电压的光电转换模块。但在背接触式GaAs电池的制备过程中，需要采用干法或湿法刻蚀的方法，各向异性刻蚀出具有圆柱形凹槽进而制备触点。由于圆柱形凹槽侧立面与电池垂直，使其在后续钝化层制备过程中，不利于钝化物沉积附着于圆柱形凹槽侧立面，从而容易产生孔洞、侧立面附着钝化层厚度过薄且不均匀等问题，容易造成电极触电制备过程中造成正负极的短路问题；同时，为达到适合的圆柱形侧立面钝化层的厚度，需要更长的时间进行电池表面钝化，增加了工艺时间及原材料的使用量；同时，过多暴露GaAs材料层导致暗电流的增加，而为了避免基极电极与P型AlGaAs接触，需要较大的基极电极凹槽，这导致暗电流的进一步增加。因此，需要较小的基极电极凹槽，而较小的电极凹槽导致了凹槽侧壁钝化层的制备难度及基极电极的制备难度。
发明内容
为此，本发明所要解决的技术问题在于现有太阳能电池的N型触点为圆柱形导致侧立面钝化层形成困难的问题，进而提供一种太阳能电池片及由这种太阳能电池片串联连接的太阳能电池组，其通过改变太阳能电池片的N型触点形状解决了侧立面钝化层难以形成的问题，降低了工艺难度，减少了钝化材料的使用。
所采用技术方案如下所述：
一种太阳能电池片，包括堆叠设置的窗口层、基极层、发射极层和钝化层，所述太阳能电池片上设有间隔设置的N型触点阵列和P型触点阵列，所述N型触点贯穿所述发射极层和钝化层，所述P型触点贯穿所述钝化层；
所述太阳能电池片还包括设置在所述发射极层和钝化层之间的界面层，所述述N型触点贯穿所述发射极层、界面层和钝化层使所述基极层裸露，所述P型触点贯穿所述钝化层使所述界面层裸露。
所述N型触点开口端的横截面积大于其底部横截面积。
优选地所述N型触点为倒圆台型。
所述N型触点的侧壁与水平面的夹角锐角α为：5°≤α≤85°。
所述N型触点侧壁外侧设置有由所述钝化层延伸形成的侧壁钝化层。
相邻N型触点阵列和P型触点阵列构成触点阵列组，所述触点阵列组的数量为偶数，设置在所述太阳能电池片中心线一侧的触点阵列组的N型触点阵列和P型触点阵列分别与另一侧的触点阵列组的P型触点阵列和N型触点阵列呈镜像排布。
相邻N型触点阵列和P型触点阵列构成触点阵列组，所述触点阵列组的数量为奇数，设置在中间触点阵列组中心线一侧的N型触点阵列和P型触点阵列分别与另一侧的触点阵列组 的P型触点阵列和N型触点阵列呈镜像排布。
所述N型触点阵列和所述P型触点阵列等间距设置。
所述的太阳能电池片为砷化镓薄膜太阳能电池。
所述太阳能电池片还包括设置在所述窗口层远离所述基极层一侧的抗反射涂层。
一种串联连接的太阳能电池组件，包括至少两个所述的太阳能电池片，相邻所述太阳能电池片对应位置的N型触点阵列和P型触点阵列电导通形成串联连接。
相邻所述太阳能电池片对应位置的N型触点阵列和P型触点阵列通过电极连接线电导通形成串联连接。
每一所述太阳能电池片和与其相邻的太阳能电池片呈逆向平行设置。
其中逆向平行设置是指所述太阳能电池片的相邻太阳能电池片是经由所述太阳能电池片旋转180°得到的，该二者可以是两端对齐，也可以是非两端对齐。
所述太阳能电池片的N型触点阵列和与其相邻的太阳能电池片的P型触点阵列通过电极连接线电导通，P型触点阵列与和其相邻的太阳能电池片的N型触点阵列通过电极连接线电导通。
一种太阳能电池片的制备方法，包括下述步骤：
S1、在基底上依次制备缓冲层、缓释层、窗口层、基极层、发射极层和界面层；
S2、刻蚀形成贯穿所述界面层和发射极层的数个呈阵列分布的倒圆台型凹槽，所述倒圆台型凹槽的底部为基极层，所述倒圆台型凹槽的侧壁与水平面的夹角锐角α为：5°≤α≤85°；
S3、在步骤S2基础上制备钝化层，利用掩膜工艺掩盖在倒圆台型凹槽内部预留N型触点的位置，从而在界面层上方形成钝化层并在倒圆台型凹槽侧壁形成侧壁钝化层，所述侧壁钝化层和所述基极层间形成倒圆台型基极电极凹槽；
S4、刻蚀形成贯穿所述钝化层的数个呈阵列分布的发射极电极凹槽，发射极电极凹槽底部为界面层；
S5、在所述倒圆台型基极电极凹槽内部制备N型触点；在所述发射极电极凹槽内部制备P型触点；
S6、剥离去除基底、缓冲层和缓释层，即得所述太阳能电池片。
优选地所述的步骤S2为：采用干法刻蚀或者湿法各向同性刻蚀的方法刻蚀倒圆台型凹槽；
所述的步骤S4为：采用干法刻蚀或者湿法刻蚀的方法刻蚀发射极电极凹槽；
所述的步骤S6为：剥离去除基底、缓冲层和缓释层后，在窗口层远离所述基极层的一侧制备抗反射涂层。
可替代的所述的步骤S3为：在界面层上方形成钝化层并在倒圆台型凹槽侧壁形成侧壁 钝化层，然后经刻蚀工艺刻蚀去除倒圆台型凹槽底部的钝化层，暴露出基极层以用于基极电极的制备，所述侧壁钝化层和所述基极层间形成倒圆台型基极电极凹槽。
本发明相对于现有技术具有如下有益效果：
本发明的目的是提供一种新型太阳能电池片，通过在太阳能电池片上设有间隔设置的P型触点阵列和N型触点阵列，所述N型触点为倒圆台型，所述N型触点的侧壁与水平面的夹角锐角α为：5°≤α≤85°。因采用倒圆台形的凹槽侧面与及基层具有一定的倾角，可显著降低侧壁钝化层的制备难度，同时，由此制备的倒圆台型的基极电极，可减少因基极电极凹槽的制备造成的表面缺陷增加，降低电池的暗电流，并提高电池的效率。
进一步地，本发明所述的太阳能电池片具有相同的结构，在连接时将太阳能电池片的电极触点(P型触点)与其紧邻的太阳能电池片异型触点(N型触点)进行连接，其N型触点与其紧邻的太阳能电池片异型触点(P型触点)进行连接，从而形成数个GaAs光伏器件的串联连接，通过此种制作方法避免了制备两种类型电极触点布局的GaAs光伏器件单元，具有结构简单且易实现的特点。
附图说明
为了使本发明的内容更容易被清楚的理解，下面根据本发明的具体实施例并结合附图，对本发明作进一步详细的说明，其中
图1是本发明提供太阳能电池片的结构示意图；
图2是图1的I部局部放大示意图；
图3是图1的II部局部放大示意图；
图4是太阳能电池片的结构示意图；
图5是太阳能电池片另一实施方式的结构示意图；
图6是太阳能电池组件摆放方式的结构示意图；
图7是图6的A-A截面图；
图8是图7的I部局部放大示意图；
图9是图7的II部局部放大示意图；
图10是太阳能电池片制备过程示意图；
图中：1-基底；2-缓冲层；3-缓释层；4-窗口层；5-基极层；6-发射极层；7-界面层；8-钝化层；10-侧壁钝化层；12-N型触点；13-P型触点；14-电极连接线；15-抗反射涂层。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进 一步地详细描述。
如图1-3所示，本发明的太阳能电池，包括窗口层4、基极层5、发射极层6和钝化层8，所述太阳能电池片上设有间隔设置的N型触点12阵列和P型触点13阵列，所述N型触点12贯穿所述发射极层6和钝化层8，所述P型触点13贯穿所述钝化层8。
作为另一实施方式，所述太阳能电池片还包括设置在所述发射极层6和钝化层8之间的界面层7，所述N型触点12贯穿所述发射极层6、界面层7和钝化层8使所述基极层5裸露，所述P型触点13贯穿所述钝化层8使所述界面层7裸露。
所述N型触点12开口端的横截面积大于其底部横截面积，优选为倒圆台型；所述N型触点12的侧壁与水平面的夹角锐角α为：5°≤α≤85°。所述N型触点12侧壁外侧设置有由所述钝化层8延伸形成的侧壁钝化层10。
进一步地，如图4所示，相邻N型触点12阵列和P型触点13阵列构成触点阵列组(图中虚线框内所示)，所述触点阵列组的数量可以为偶数也可以为奇数。图4所述的触点阵列组为偶数，设置在所述太阳能电池片中心线一侧的触点阵列组的N型触点12阵列和P型触点13阵列分别与另一侧的触点阵列组的P型触点13阵列和N型触点12阵列呈镜像排布。具体地，图4中的太阳能电池片中心线是指第二触点阵列组和第三触点阵列组之间的虚线，所述第一触点阵列组的N型触点12阵列和第四触点阵列组的P型触点13阵列呈镜像排布，所述第一触点阵列组的P型触点13阵列和第四触点阵列组的N型触点12阵列呈镜像排布；所述第二触点阵列组的N型触点12阵列和第三触点阵列组的P型触点13阵列呈镜像排布，所述第二触点阵列组的P型触点13阵列和第三触点阵列组的N型触点12阵列呈镜像排布。
如图5所示所述的触点阵列组为奇数，设置在中间触点阵列组中心线一侧的N型触点12阵列和P型触点13阵列分别与另一侧的触点阵列组的P型触点13阵列和N型触点12阵列呈镜像排布。具体地，所述第一触点阵列组的N型触点12阵列和第五触点阵列组的P型触点13阵列呈镜像排布，所述第一触点阵列组的P型触点13阵列和第五触点阵列组的N型触点12阵列呈镜像排布；所述第二触点阵列组的N型触点12阵列和第四触点阵列组的P型触点13阵列呈镜像排布，所述第二触点阵列组的P型触点13阵列和第四触点阵列组的N型触点12阵列呈镜像排布，所述第三触点阵列组的N型触点12阵列和P型触点13阵列呈镜像排布。
所述N型触点12阵列和所述P型触点13阵列可以非等间距设置，也可以等间距设置，优选等间距设置。
发明的太阳能电池片为砷化镓薄膜太阳能电池。
本发明的串联连接的太阳能电池组件包括至少两个图4所示的太阳能电池片，相邻所述太阳能电池片对应位置的N型触点12阵列和P型触点13阵列电导通形成串联连接，如图6 所示为4个图4所示的太阳能电池片串联连接示意图。
作为优选方式，所述太阳能电池片对应位置的N型触点12阵列和P型触点13阵列通过电极连接线14电导通形成串联连接。
具体地，所述太阳能电池片的N型触点12阵列与和其相邻的太阳能电池片的P型触点13阵列通过电极连接线14电导通，P型触点13阵列与和其相邻的太阳能电池片的N型触点12阵列通过电极连接线14电导通。
如图6所示，所示的串联连接的太阳能电池组件包括四个结构完全相同的太阳能电池片，从上往下的太阳能电池片编号依次为第一太阳能电池片、第二太阳能电池片、第三太阳能电池片、第四太阳能电池片，当然根据需要还可以包括更多的太阳能电池片。为使太阳能电池片串联连接时结构更为整齐，并且使用的最少的电极连接线14，构成所述太阳能电池组件的偶数行的太阳能电池片的摆放方式相同，构成所述太阳能电池组件的奇数行的太阳能电池片的摆放方式相同，所述偶数行的太阳能电池片与所述奇数行的太阳能电池片相比，摆放位置旋转了180°。
如图6至图9所示，每一所述太阳能电池片和与其相邻的太阳能电池片呈逆向平行设置，所述太阳能电池片的N型触点12阵列和与其相邻的太阳能电池片的P型触点13阵列通过电极连接线14电导通，P型触点13阵列与和其相邻的太阳能电池片的N型触点12阵列通过电极连接线14电导通。具体地，所述第一太阳能电池片和第三太阳能电池片的摆放方式相同，所述第二太阳能电池片和第四太阳能电池片的摆放方式相同，所述第一太阳能电池片摆放好后，所述第二太阳能电池片旋转180°与所述第一太阳能电池片平行设置且两端对齐，此时所述第一太阳能电池片与所述第二太阳能电池片构成逆向平行设置。此时所述第一太阳能电池片的N型触点12阵列与第二太阳能电池片的P型触点13阵列位于同一直线上，所述第一太阳能电池片的P型触点13阵列与第二太阳能电池片的N型触点12阵列位于同一直线上，分别将二者通过电极连接线14连接，完成第一太阳能电池片和第二太阳能电池片的串联连接；以此类推第三第四太阳能电池片的连接方式，直至完成所有阳能电池片的串联连接。
除另有说明外，发明的所述N型触点12阵列是指由N型若干触点12构成的列(或行)，所述P型触点13阵列是指由P型若干触点13构成的列(或行)。
上述太阳能电池片的制备方法，包括下述步骤：
S1：如图10所示，在基底1上依次制备缓冲层2的沉积：采用金属有机物化学气相沉积技术(MOCVD)在GaAs基底1上沉积GaAs缓冲层2，其中，缓冲层2的结构可为一层或者多层的结构，缓冲层的作用在于提供一种介于GaAs基底1与最终的光电转换单元半导体之间的中间媒介层，从而当形成各种外延层时，可降低晶格失配造成的缺陷中心及晶格应力影响，从而外延生长各种不同晶格结构的外延层，例如大约150nm-250nm厚度区间的GaAs 缓冲层2可应用于基于GaAs各种掺杂结构的光伏电池；
AlAs缓释层3的沉积：在GaAs缓冲层2上进行AlAs缓释层3的沉积，缓释层3包括但不仅限于AlAs外延材料，其厚度约在5nm-15nm之间，如此薄的缓释层3的主要作用是作为牺牲层，可采用HF酸湿法刻蚀技术，从而将后续沉积在缓释层上的外延层与缓冲层2及GaAs基底1分离；
窗口层4的沉积工艺：采用金属有机物化学气相沉积(MOCVD)的方法，在AlAs缓释层3的沉积10nm-40nm厚度的AlGaAs半导体层，其中Al:Ga的比例介于0.2:0.8和0.3:0.7之间，此透明窗口层可以允许光子直接穿过而不吸收；
基极层5的沉积工艺：在窗口层4上沉积n型III-V族化合物材料砷化镓(GaAs)，基极层5GaAs层可为单晶结构，也可为n型掺杂方式，其中，若为n型掺杂的基极层5的掺杂浓度可在约在1×1016cm-3至1×1019cm-3范围内，例如5×1017cm-3，基极层的厚度位于400nm至4000nm范围内；
发射极层6的制备工艺；采用金属有机物化学气相沉积(MOCVD)方法，在基极层5的上方制备发射极层6，其中发射极层6包括可与基极层5形成异质结结构的任何适宜的III-V族化合物半导体，如基极层为GaAs材料，那么发射极层6的构成为AlGaAs层，且为P型重掺杂，掺杂浓度可在约在1×1017cm-3至1×1020cm-3范围内，例如5×1018cm-3，且发射层的厚度介于150nm至450nm之间，例如300nm，这样基极层5与发射极层6形成光电吸收层；
界面层7的制备工艺；采用金属有机物化学气相沉积(MOCVD)方法，在发射极层6的上方制备界面层7，其中界面层7与发射极层均为AlGaAs层，且界面层7为且为P+型重掺杂，掺杂浓度可在约在5×1017cm-3至5×1020cm-3范围内，例如1×1019cm-3，P+型重掺杂的目的可有助于形成欧姆接触，且界面层7的厚度介于100nm至400nm之间，例如200nm厚度；
S2：倒圆台型凹槽的制备；采用干法刻蚀或者湿法各向同性刻蚀的方法，贯穿界面层7和发射极层6刻蚀数个阵列分布的倒圆台型凹槽，所述倒圆台型凹槽的底部为基极层5，所述倒圆台型凹槽的侧壁与水平面的夹角锐角α为：5°≤α≤85°；
S3：钝化层8的制备工艺：采用任何适宜的钝化工艺，例如化学气相沉积(CVD)或者等离子增强化学气相沉积的方法，利用掩膜工艺掩盖在倒圆台型凹槽内部预留N型触点12的位置，从而在界面层7上方形成钝化层8并在倒圆台型凹槽侧壁形成侧壁钝化层10，且钝化层8和侧壁钝化层10可包括任何不导电的材料，包括但不仅限于氮化硅(SiNx)、硅氧化合物(SiOx)、钛氧化合物(TiOx)、铊氧化合物(TaOx)、硫化锌(ZnS)其中的一种或者几种的堆叠结构；所述侧壁钝化层10和所述基极层5间形成的倒圆台型基极电极凹槽；
也可以在界面层7上方形成钝化层8并在倒圆台型凹槽侧壁形成侧壁钝化层10，然后经 刻蚀工艺刻蚀去除倒圆台型凹槽底部的钝化层，暴露出基极层5形成所述倒圆台型基极电极凹槽；
S4、采用干法刻蚀或者湿法刻蚀的方法，经由钝化层8刻蚀数个阵列分布的发射极电极凹槽，发射极电极凹槽底部为界面层7；发射极电极凹槽内部预留P型触点13区域，且发射极电极凹槽与倒圆台型基极电极凹槽沿X方向具有相同的列数，同时，发射极电极凹槽与倒圆台型基极电极凹槽成交替排列分布；
S5、电极触点的制备：在所述倒圆台型基极电极凹槽内部制备N型触点12；在所述发射极电极凹槽内部制备P型触点13；N型触点12及P型触点13可由金属或金属合金的适合导电材料，且不应在制造期间刺穿至光电器件的半导体层。此外，N型触点的材料可优选地能够在相对低的金属化工艺温度(例如在150℃和200℃之间)下应用，例如因钯不与GaAs反应，则N型触点12及P型触点13可由钯/锗(Pd/Ge)合金构成。至此可形成GaAs光伏器件单元；N型触点12及P型触点13的制备方法包括但不仅限于经由光致抗蚀剂的真空蒸发、光刻技术、丝网印刷、溅射法，从而只在N型触点12及P型触点13位置进行沉积。这些方法全部涉及一种系统，其中不需要触点的部分被保护。
S6：GaAs光伏器件单元的剥离工艺：可采用HF酸湿法刻蚀技术，从而将后续沉积在缓释层上的各层外延层与缓冲层2及GaAs基底1分离，从而剥离形成GaAs光伏器件单元，抗反射涂层15为抗反射AR涂层布置在窗口层4上，AR涂层包括允许光通过且阻止光在其表面反射的任何材料，包括氟化镁(MgF2)、二氧化硅(SiO2)、硫化锌(ZnS)、二氧化钛(TiO2)、氮化硅(SiN)其中的一种或其任何组合。AR涂层可采用任何适合的方法(例如溅射法)涂覆到窗口层4之上。同时，在涂覆抗反射涂层之前，窗口层4可采用湿式蚀刻或干式蚀刻进行粗糙化或纹理化处理。通过将窗口层4粗糙化或纹理化，可在AR涂层与窗口层4(这些层可具有不同的折射率)之间的界面处提供不同的角度，由此根据斯涅尔定律一些光子的入射角度过高，可使更多的入射光子透射至窗口层4中，而不在AR涂层与窗口层4的界面进行反射，从而提高光子的透过率。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明的保护范围之中。

Claims (18)

  1. 一种太阳能电池片，包括堆叠设置的窗口层(4)、基极层(5)、发射极层(6)和钝化层(8)，其特征在于，所述太阳能电池片上设有间隔设置的N型触点(12)阵列和P型触点(13)阵列，所述N型触点(12)贯穿所述发射极层(6)和钝化层(8)，所述P型触点(13)贯穿所述钝化层(8)。
  2. 根据权利要求1所述的太阳能电池片，其特征在于，所述太阳能电池片还包括设置在所述发射极层(6)和钝化层(8)之间的界面层(7)，所述述N型触点(12)贯穿所述发射极层(6)、界面层(7)和钝化层(8)使所述基极层(5)裸露，所述P型触点(13)贯穿所述钝化层(8)使所述界面层(7)裸露。
  3. 根据权利要求1或2所述的太阳能电池片，其特征在于，所述N型触点(12)开口端的横截面积大于其底部横截面积。
  4. 根据权利要求1或2所述的太阳能电池片，其特征在于，所述N型触点(12)为倒圆台型。
  5. 根据权利要求4所述的太阳能电池片，其特征在于，所述N型触点(12)的侧壁与水平面的夹角锐角α为：5°≤α≤85°。
  6. 根据权利要求5所述的太阳能电池片，其特征在于，所述N型触点(12)侧壁外侧设置有由所述钝化层(8)延伸形成的侧壁钝化层(10)。
  7. 根据权利要求6所述的太阳能电池片，其特征在于，相邻N型触点(12)阵列和P型触点(13)阵列构成触点阵列组，所述触点阵列组的数量为偶数，设置在所述太阳能电池片中心线一侧的触点阵列组的N型触点(12)阵列和P型触点(13)阵列分别与另一侧的触点阵列组的P型触点(13)阵列和N型触点(12)阵列呈镜像排布。
  8. 根据权利要求6所述的太阳能电池片，其特征在于，相邻N型触点(12)阵列和P型触点(13)阵列构成触点阵列组，所述触点阵列组的数量为奇数，设置在中间触点阵列组中心线一侧的N型触点(12)阵列和P型触点(13)阵列分别与另一侧的触点阵列组的P型触点(13)阵列和N型触点(12)阵列呈镜像排布。
  9. 根据权利要求1或2任一所述的太阳能电池片，其特征在于，所述N型触点(12)阵列和所述P型触点(13)阵列等间距设置。
  10. 根据权利要求9所述太阳能电池片，其特征在于，所述的太阳能电池片为砷化镓薄膜太阳能电池。
  11. 根据权利要求1或2任一项所述的太阳能电池片，其特征在于，所述太阳能电池片还包括设置在所述窗口层(4)远离所述基极层(5)一侧的抗反射涂层(15)。
  12. 一种串联连接的太阳能电池组件，其特征在于，包括至少两个权利要求1或权2任一项所述的太阳能电池片，相邻所述太阳能电池片对应位置的N型触点(12)阵列和P型触点(13)阵列电导通形成串联连接。
  13. 根据权利要求11所述串联连接的太阳能电池组件，其特征在于，每一所述太阳能电池片和与其相邻的太阳能电池片呈逆向平行设置。
  14. 根据权利要求11所述串联连接的太阳能电池组件，其特征在于，所述太阳能电池片的N型触点(12)阵列和与其相邻的太阳能电池片的P型触点(13)阵列通过电极连接线(14)电导通，P型触点(13)阵列与和其相邻的太阳能电池片的N型触点(12)阵列通过电极连接线(14)电导通。
  15. 一种太阳能电池片的制备方法，其特征在于，包括下述步骤：
    S1、在基底(1)上依次制备缓冲层(2)、缓释层(3)、窗口层(4)、基极层(5)、发射极层(6)和界面层(7)；
    S2、刻蚀形成贯穿所述界面层(7)和发射极层(6)的数个呈阵列分布的倒圆台型凹槽，所述倒圆台型凹槽的底部为基极层(5)，所述倒圆台型凹槽的侧壁与水平面的夹角锐角α为：5°≤α≤85°；
    S3、在步骤S2基础上制备钝化层(8)，利用掩膜工艺掩盖在倒圆台型凹槽内部预留N型触点(12)的位置，从而在界面层(7)上方形成钝化层(8)并在倒圆台型凹槽侧壁形成侧壁钝化层(10)，所述侧壁钝化层(10)和所述基极层(5)间形成倒圆台型基极电极凹槽；
    S4、刻蚀形成贯穿所述钝化层(8)的数个呈阵列分布的发射极电极凹槽，发射极电极凹槽底部为界面层(7)；
    S5、在所述倒圆台型基极电极凹槽内部制备N型触点(12)；在所述发射极电极凹槽内部制备P型触点(13)；
    S6、剥离去除基底(1)、缓冲层(2)和缓释层(3)，即得所述太阳能电池片。
  16. 根据权利要求15所述的太阳能电池片的制备方法，其特征在于，
    所述的步骤S2为：采用干法刻蚀或者湿法各向同性刻蚀的方法刻蚀倒圆台型凹槽；
    所述的步骤S4为：采用干法刻蚀或者湿法刻蚀的方法刻蚀发射极电极凹槽。
  17. 根据权利要求15所述的太阳能电池片的制备方法，其特征在于，
    所述的步骤S3还可以为：在界面层(7)上方形成钝化层(8)并在倒圆台型凹槽侧壁形成侧壁钝化层(10)，然后经刻蚀工艺刻蚀去除倒圆台型凹槽底部的钝化层，暴露出基极层(5)以用于基极电极的制备，所述侧壁钝化层(10)和所述基极层(5)间形成倒圆台型基极电极凹槽。
  18. 根据权利要求15至17任一项所述的太阳能电池片的制备方法，其特征在于，所述 的步骤S6还包括：
    剥离去除基底(1)、缓冲层(2)和缓释层(3)后，在窗口层(4)远离所述基极层(5)的一侧制备抗反射涂层(15)。
PCT/CN2016/101975 2015-10-19 2016-10-13 太阳能电池片、其制备方法及其组成的太阳能电池组 WO2017067413A1 (zh)

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