JP7158024B2 - 太陽電池セルおよびその製造方法並びに太陽電池モジュール - Google Patents
太陽電池セルおよびその製造方法並びに太陽電池モジュール Download PDFInfo
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- JP7158024B2 JP7158024B2 JP2019013756A JP2019013756A JP7158024B2 JP 7158024 B2 JP7158024 B2 JP 7158024B2 JP 2019013756 A JP2019013756 A JP 2019013756A JP 2019013756 A JP2019013756 A JP 2019013756A JP 7158024 B2 JP7158024 B2 JP 7158024B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 161
- 239000000758 substrate Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 21
- 238000012360 testing method Methods 0.000 description 19
- 150000001768 cations Chemical class 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000010248 power generation Methods 0.000 description 12
- 229910001415 sodium ion Inorganic materials 0.000 description 12
- 239000006059 cover glass Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Description
例えば、太陽光発電システムにおいては、複数の太陽電池モジュールを直列接続することにより、システム電圧を高めることが行われている。
次に、図1に示す太陽電池モジュールPVM1のように、モジュールフレームのフレーム電位(グランド電位)に対して、太陽電池セルのセル電位が低くなる太陽電池モジュールにおいて顕在化する改善の余地について説明する。
図4は、本実施の形態における太陽電池セルの模式的な構成を示す平面図である。
本実施の形態における太陽電池セルCLは、上記のように構成されており、以下にその動作について、図5を参照しながら説明する。
次に、本実施の形態における太陽電池セルの製造方法について説明する。
続いて、本実施の形態における太陽電池セルCLを使用した太陽電池モジュールPVMの模式的な構成について、図面を参照しながら説明する。
次に、本実施の形態における特徴点について説明する。
続いて、本実施の形態における太陽電池モジュールPVMによれば、「PID」を抑制できる効果を裏付ける測定結果について説明する。
本実施の形態における技術的思想は、図5に示す太陽電池セルCLに限らず、例えば、PERC(Passivated Emitter Rear Cell)構造の太陽電池セルにも適用できる。
最後に、本実施の形態における技術的思想の有用性について説明する。
ARF 反射防止膜
BE 裏面電極
BS バックシート
CF 導電性膜
GS カバーガラス
MF モジュールフレーム
MR 封止部材
NL n型半導体層
SE 表面電極
Claims (12)
- 裏面電極と、
前記裏面電極上に配置され、かつ、第1導電型である第1半導体層と、
前記第1半導体層上に配置され、かつ、第2導電型である第2半導体層と、
前記第2半導体層上に配置され、かつ、絶縁膜からなる反射防止膜と、
前記反射防止膜を貫通して前記第2半導体層に達する表面電極と、
前記表面電極を覆うように前記反射防止膜上に配置され、かつ、透光性を有し、かつ、前記第2半導体層と電気的に接続された導電性膜と、
を備える、太陽電池セル。 - 請求項1に記載の太陽電池セルにおいて、
前記導電性膜は、10ジーメンス/cm以上の導電率を有する、太陽電池セル。 - 請求項1または2のいずれかに記載の太陽電池セルにおいて、
前記導電性膜の膜厚は、0nmよりも大きく100nm以下である、太陽電池セル。 - 請求項1~3のいずれか一つに記載の太陽電池セルにおいて、
前記導電性膜は、インジウムと酸素とを含む膜から構成されている、太陽電池セル。 - 請求項1~3のいずれか一つに記載の太陽電池セルにおいて、
前記導電性膜は、亜鉛と酸素とを含む膜から構成されている、太陽電池セル。 - 請求項1~5のいずれか一つに記載の太陽電池セルにおいて、
前記第2半導体層の表面には、凹凸構造が形成されている、太陽電池セル。 - 請求項1~6のいずれか一つに記載の太陽電池セルにおいて、
前記反射防止膜は、窒化シリコン膜から形成されている、太陽電池セル。 - 請求項1~7のいずれか一つに記載の太陽電池セルにおいて、
前記第1半導体層は、p型半導体層であり、
前記第2半導体層は、n型半導体層である、太陽電池セル。 - 請求項1~8のいずれか一つに記載の太陽電池セルと、
前記太陽電池セルを封止する封止部材と、
前記封止部材の下面に配置されるバックシートと、
前記封止部材の上面に配置される透光性部材と、
接地電位が供給されるモジュールフレームと、
を有する、太陽電池モジュール。 - (a)第1導電型である半導体基板を用意する工程、
(b)前記半導体基板に第2導電型である半導体層を形成する工程、
(c)前記半導体層上に反射防止膜を形成する工程、
(d)前記半導体基板と接する裏面電極を形成する工程、
(e)前記反射防止膜上に表面電極を形成する工程、
(f)前記(e)工程の後、前記半導体基板に熱処理を施す工程、
(g)前記(f)工程の後、前記反射防止膜上に、前記表面電極を覆い、かつ、透光性を有する導電性膜を形成する工程、
を備える、太陽電池セルの製造方法であって、
前記(f)工程では、前記表面電極が前記反射防止膜を貫通して前記半導体層に達し、
前記導電性膜は、前記半導体層と電気的に接続される、太陽電池セルの製造方法。 - 請求項10に記載の太陽電池セルの製造方法において、
前記(g)工程では、溶液塗布法を使用する、太陽電池セルの製造方法。 - 請求項10に記載の太陽電池セルの製造方法において、
前記(g)工程では、スパッタリング法または蒸着法を使用する、太陽電池セルの製造方法。
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