TWI351758B - - Google Patents

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Publication number
TWI351758B
TWI351758B TW096139885A TW96139885A TWI351758B TW I351758 B TWI351758 B TW I351758B TW 096139885 A TW096139885 A TW 096139885A TW 96139885 A TW96139885 A TW 96139885A TW I351758 B TWI351758 B TW I351758B
Authority
TW
Taiwan
Prior art keywords
electrode pad
electrode
semiconductor substrate
state
back surface
Prior art date
Application number
TW096139885A
Other languages
English (en)
Chinese (zh)
Other versions
TW200828580A (en
Inventor
Masami Suzuki
Yoshimichi Harada
Yoshihiro Nabe
Yuji Takaoka
Masaaki Takizawa
Chiaki Sakai
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200828580A publication Critical patent/TW200828580A/zh
Application granted granted Critical
Publication of TWI351758B publication Critical patent/TWI351758B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13021—Disposition the bump connector being disposed in a recess of the surface
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/0494—4th Group
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    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Wire Bonding (AREA)
TW096139885A 2006-11-30 2007-10-24 Solid-state imaging device TW200828580A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006323042A JP4403424B2 (ja) 2006-11-30 2006-11-30 固体撮像装置

Publications (2)

Publication Number Publication Date
TW200828580A TW200828580A (en) 2008-07-01
TWI351758B true TWI351758B (enExample) 2011-11-01

Family

ID=39474746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096139885A TW200828580A (en) 2006-11-30 2007-10-24 Solid-state imaging device

Country Status (4)

Country Link
US (1) US7851880B2 (enExample)
JP (1) JP4403424B2 (enExample)
CN (1) CN101192620A (enExample)
TW (1) TW200828580A (enExample)

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JP5434306B2 (ja) * 2008-10-31 2014-03-05 日本電気株式会社 半導体装置及び半導体装置の製造方法
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JP2011009645A (ja) * 2009-06-29 2011-01-13 Toshiba Corp 半導体装置及びその製造方法
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JP2011187754A (ja) * 2010-03-10 2011-09-22 Toshiba Corp 固体撮像装置及びその製造方法
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JP5832852B2 (ja) 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
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TWI628723B (zh) * 2015-03-10 2018-07-01 精材科技股份有限公司 一種晶片尺寸等級的感測晶片封裝體及其製造方法
JP6138859B2 (ja) * 2015-06-12 2017-05-31 ラピスセミコンダクタ株式会社 半導体装置
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WO2017104103A1 (ja) * 2015-12-17 2017-06-22 パナソニックＩｐマネジメント株式会社 接続構造体
CN106910693B (zh) * 2015-12-23 2019-11-08 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
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CN205752132U (zh) * 2016-05-19 2016-11-30 深圳市汇顶科技股份有限公司 硅通孔芯片、指纹识别传感器和终端设备
TWI875314B (zh) * 2016-06-03 2025-03-01 日商大日本印刷股份有限公司 貫通電極基板及其製造方法、以及安裝基板
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
CN109273462A (zh) * 2017-07-17 2019-01-25 中芯国际集成电路制造(上海)有限公司 一种cis芯片封装方法及结构
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