JP4403424B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP4403424B2 JP4403424B2 JP2006323042A JP2006323042A JP4403424B2 JP 4403424 B2 JP4403424 B2 JP 4403424B2 JP 2006323042 A JP2006323042 A JP 2006323042A JP 2006323042 A JP2006323042 A JP 2006323042A JP 4403424 B2 JP4403424 B2 JP 4403424B2
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- JP
- Japan
- Prior art keywords
- electrode pad
- back surface
- solid
- imaging device
- state imaging
- Prior art date
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- H—ELECTRICITY
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Wire Bonding (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006323042A JP4403424B2 (ja) | 2006-11-30 | 2006-11-30 | 固体撮像装置 |
| TW096139885A TW200828580A (en) | 2006-11-30 | 2007-10-24 | Solid-state imaging device |
| US11/944,831 US7851880B2 (en) | 2006-11-30 | 2007-11-26 | Solid-state imaging device |
| CNA2007101961190A CN101192620A (zh) | 2006-11-30 | 2007-11-28 | 固体摄像装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006323042A JP4403424B2 (ja) | 2006-11-30 | 2006-11-30 | 固体撮像装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009127188A Division JP5136515B2 (ja) | 2009-05-27 | 2009-05-27 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008140819A JP2008140819A (ja) | 2008-06-19 |
| JP4403424B2 true JP4403424B2 (ja) | 2010-01-27 |
Family
ID=39474746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006323042A Expired - Fee Related JP4403424B2 (ja) | 2006-11-30 | 2006-11-30 | 固体撮像装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7851880B2 (enExample) |
| JP (1) | JP4403424B2 (enExample) |
| CN (1) | CN101192620A (enExample) |
| TW (1) | TW200828580A (enExample) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8212331B1 (en) * | 2006-10-02 | 2012-07-03 | Newport Fab, Llc | Method for fabricating a backside through-wafer via in a processed wafer and related structure |
| JP4799542B2 (ja) | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ |
| JP4713602B2 (ja) * | 2008-02-21 | 2011-06-29 | パナソニック株式会社 | 基板モジュールおよびその製造方法ならびに電子機器 |
| JP2009283503A (ja) * | 2008-05-19 | 2009-12-03 | Panasonic Corp | 半導体装置及びその製造方法 |
| JP5409617B2 (ja) | 2008-05-29 | 2014-02-05 | 森永乳業株式会社 | 生残菌数推定方法及び保証菌数の設定方法 |
| JP5175620B2 (ja) * | 2008-05-29 | 2013-04-03 | シャープ株式会社 | 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器 |
| JP2009295676A (ja) * | 2008-06-03 | 2009-12-17 | Oki Semiconductor Co Ltd | 半導体装置及びその製造方法 |
| JP5356742B2 (ja) * | 2008-07-10 | 2013-12-04 | ラピスセミコンダクタ株式会社 | 半導体装置、半導体装置の製造方法および半導体パッケージの製造方法 |
| JP2010040862A (ja) * | 2008-08-06 | 2010-02-18 | Fujikura Ltd | 半導体装置 |
| JP5455538B2 (ja) * | 2008-10-21 | 2014-03-26 | キヤノン株式会社 | 半導体装置及びその製造方法 |
| JP5434306B2 (ja) * | 2008-10-31 | 2014-03-05 | 日本電気株式会社 | 半導体装置及び半導体装置の製造方法 |
| SG161130A1 (en) * | 2008-11-06 | 2010-05-27 | Turbine Overhaul Services Pte | Methods for repairing gas turbine engine components |
| JP2010114390A (ja) | 2008-11-10 | 2010-05-20 | Panasonic Corp | 半導体装置および半導体装置の製造方法 |
| JP4659875B2 (ja) * | 2008-11-25 | 2011-03-30 | パナソニック株式会社 | 半導体装置 |
| JP5146307B2 (ja) * | 2008-12-26 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
| CN102224579B (zh) * | 2008-11-25 | 2013-12-04 | 松下电器产业株式会社 | 半导体装置及电子设备 |
| DE102008054765A1 (de) * | 2008-12-16 | 2010-06-24 | Robert Bosch Gmbh | Bauteil mit einer Durchkontaktierung und ein Verfahren zur Herstellung eines solchen Bauteils |
| JP5438980B2 (ja) * | 2009-01-23 | 2014-03-12 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
| JP2010206158A (ja) | 2009-02-04 | 2010-09-16 | Panasonic Corp | デバイス |
| US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
| JP5773379B2 (ja) * | 2009-03-19 | 2015-09-02 | ソニー株式会社 | 半導体装置とその製造方法、及び電子機器 |
| JP5985136B2 (ja) | 2009-03-19 | 2016-09-06 | ソニー株式会社 | 半導体装置とその製造方法、及び電子機器 |
| JP2010251558A (ja) * | 2009-04-16 | 2010-11-04 | Toshiba Corp | 固体撮像装置 |
| JP2011009645A (ja) * | 2009-06-29 | 2011-01-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2011086709A (ja) * | 2009-10-14 | 2011-04-28 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| JP2011187754A (ja) * | 2010-03-10 | 2011-09-22 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| US9652089B2 (en) * | 2010-11-09 | 2017-05-16 | Tpk Touch Solutions Inc. | Touch panel stackup |
| US8872293B2 (en) * | 2011-02-15 | 2014-10-28 | Sony Corporation | Solid-state imaging device and method of manufacturing the same and electronic apparatus |
| JP5791461B2 (ja) * | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
| JP5832852B2 (ja) | 2011-10-21 | 2015-12-16 | 浜松ホトニクス株式会社 | 光検出装置 |
| US10269863B2 (en) * | 2012-04-18 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for via last through-vias |
| US8890269B2 (en) * | 2012-05-31 | 2014-11-18 | Stmicroelectronics Pte Ltd. | Optical sensor package with through vias |
| JP2014086596A (ja) * | 2012-10-24 | 2014-05-12 | Olympus Corp | 半導体装置、撮像装置、半導体基板の検査方法及び半導体装置の製造方法 |
| US8952500B2 (en) * | 2013-03-15 | 2015-02-10 | IPEnval Consultant Inc. | Semiconductor device |
| JP5764191B2 (ja) * | 2013-12-16 | 2015-08-12 | ラピスセミコンダクタ株式会社 | 半導体装置 |
| EP2889901B1 (en) | 2013-12-27 | 2021-02-03 | ams AG | Semiconductor device with through-substrate via and corresponding method |
| JP6187320B2 (ja) * | 2014-03-03 | 2017-08-30 | 株式会社デンソー | 受光チップ |
| TWI676280B (zh) * | 2014-04-18 | 2019-11-01 | 日商新力股份有限公司 | 固體攝像裝置及具備其之電子機器 |
| TWI628723B (zh) * | 2015-03-10 | 2018-07-01 | 精材科技股份有限公司 | 一種晶片尺寸等級的感測晶片封裝體及其製造方法 |
| JP6138859B2 (ja) * | 2015-06-12 | 2017-05-31 | ラピスセミコンダクタ株式会社 | 半導体装置 |
| US10038026B2 (en) | 2015-06-25 | 2018-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structure for bonding improvement |
| CN106365110A (zh) * | 2015-07-24 | 2017-02-01 | 上海丽恒光微电子科技有限公司 | 探测传感器及其制备方法 |
| WO2017104103A1 (ja) * | 2015-12-17 | 2017-06-22 | パナソニックIpマネジメント株式会社 | 接続構造体 |
| CN106910693B (zh) * | 2015-12-23 | 2019-11-08 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
| JP6780277B2 (ja) * | 2016-03-29 | 2020-11-04 | 株式会社ニコン | 基板 |
| CN205752132U (zh) * | 2016-05-19 | 2016-11-30 | 深圳市汇顶科技股份有限公司 | 硅通孔芯片、指纹识别传感器和终端设备 |
| TWI875314B (zh) * | 2016-06-03 | 2025-03-01 | 日商大日本印刷股份有限公司 | 貫通電極基板及其製造方法、以及安裝基板 |
| JP6791584B2 (ja) * | 2017-02-01 | 2020-11-25 | 株式会社ディスコ | 加工方法 |
| CN109273462A (zh) * | 2017-07-17 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | 一种cis芯片封装方法及结构 |
| CN109786478A (zh) * | 2017-11-15 | 2019-05-21 | 福建钧石能源有限公司 | 一种异质结电池的电极制备及热处理方法 |
| TWI645517B (zh) * | 2018-02-02 | 2018-12-21 | 華星光通科技股份有限公司 | Photosensor electrode stack structure for preventing moisture from entering |
| JP2019160866A (ja) | 2018-03-08 | 2019-09-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP7303698B2 (ja) | 2019-08-08 | 2023-07-05 | キヤノン株式会社 | 半導体装置および機器 |
| CN114270496B (zh) * | 2019-08-30 | 2025-06-13 | 三菱电机株式会社 | 半导体装置 |
| US20230139201A1 (en) * | 2020-03-31 | 2023-05-04 | Sony Semiconductor Solutions Corporation | Imaging element and method for manufacturing imaging element |
| WO2021199695A1 (ja) * | 2020-03-31 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像素子の製造方法 |
| JP2024098510A (ja) * | 2021-03-29 | 2024-07-24 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
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| JP4000507B2 (ja) * | 2001-10-04 | 2007-10-31 | ソニー株式会社 | 固体撮像装置の製造方法 |
| US7180149B2 (en) * | 2003-08-28 | 2007-02-20 | Fujikura Ltd. | Semiconductor package with through-hole |
| JP2005202101A (ja) | 2004-01-15 | 2005-07-28 | Nippon Oil Corp | 透過型液晶表示素子 |
| JP4242336B2 (ja) | 2004-02-05 | 2009-03-25 | パナソニック株式会社 | 半導体装置 |
| JP4307296B2 (ja) | 2004-03-12 | 2009-08-05 | 三洋電機株式会社 | 半導体装置の製造方法 |
| JP4246132B2 (ja) * | 2004-10-04 | 2009-04-02 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2007081137A (ja) * | 2005-09-14 | 2007-03-29 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| JP2007194498A (ja) | 2006-01-20 | 2007-08-02 | Fujifilm Corp | 固体撮像装置およびその製造方法 |
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| CN101192620A (zh) | 2008-06-04 |
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