CN101192620A - 固体摄像装置 - Google Patents

固体摄像装置 Download PDF

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Publication number
CN101192620A
CN101192620A CNA2007101961190A CN200710196119A CN101192620A CN 101192620 A CN101192620 A CN 101192620A CN A2007101961190 A CNA2007101961190 A CN A2007101961190A CN 200710196119 A CN200710196119 A CN 200710196119A CN 101192620 A CN101192620 A CN 101192620A
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China
Prior art keywords
electrode pad
semiconductor substrate
solid
imaging device
sealant
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CNA2007101961190A
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Chinese (zh)
Inventor
铃木优美
原田惠充
锅义博
高冈裕二
滝泽正明
酒井千秋
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Sony Corp
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Sony Corp
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Publication of CN101192620A publication Critical patent/CN101192620A/zh
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CNA2007101961190A 2006-11-30 2007-11-28 固体摄像装置 Pending CN101192620A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP323042/06 2006-11-30
JP2006323042A JP4403424B2 (ja) 2006-11-30 2006-11-30 固体撮像装置

Publications (1)

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CN101192620A true CN101192620A (zh) 2008-06-04

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US (1) US7851880B2 (enExample)
JP (1) JP4403424B2 (enExample)
CN (1) CN101192620A (enExample)
TW (1) TW200828580A (enExample)

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CN102105969A (zh) * 2008-08-06 2011-06-22 株式会社藤仓 半导体装置
CN102194841A (zh) * 2010-03-10 2011-09-21 株式会社东芝 固体摄像装置
CN102224579A (zh) * 2008-11-25 2011-10-19 松下电器产业株式会社 半导体装置及电子设备
CN103456754A (zh) * 2012-05-31 2013-12-18 意法半导体有限公司 晶片级光学传感器封装和低剖面照相机模块以及制造方法
CN105679841A (zh) * 2011-10-21 2016-06-15 浜松光子学株式会社 光检测装置
CN106298718A (zh) * 2015-06-25 2017-01-04 台湾积体电路制造股份有限公司 集成电路、前照式传感器、背照式传感器和三维集成电路
CN106365110A (zh) * 2015-07-24 2017-02-01 上海丽恒光微电子科技有限公司 探测传感器及其制备方法
US9748428B2 (en) 2011-10-21 2017-08-29 Hamamatsu Photonics K.K. Light detection device including a semiconductor light detection element with a through-hole electrode connection, a mounting substrate and a light-transmissive substrate
CN109273462A (zh) * 2017-07-17 2019-01-25 中芯国际集成电路制造(上海)有限公司 一种cis芯片封装方法及结构
CN111788688A (zh) * 2018-03-08 2020-10-16 索尼半导体解决方案公司 摄像装置
CN114270496A (zh) * 2019-08-30 2022-04-01 三菱电机株式会社 半导体装置

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JP2010114390A (ja) 2008-11-10 2010-05-20 Panasonic Corp 半導体装置および半導体装置の製造方法
JP4659875B2 (ja) * 2008-11-25 2011-03-30 パナソニック株式会社 半導体装置
JP5146307B2 (ja) * 2008-12-26 2013-02-20 パナソニック株式会社 半導体装置
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JP5438980B2 (ja) * 2009-01-23 2014-03-12 ラピスセミコンダクタ株式会社 半導体装置の製造方法
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JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP2010251558A (ja) * 2009-04-16 2010-11-04 Toshiba Corp 固体撮像装置
JP2011009645A (ja) * 2009-06-29 2011-01-13 Toshiba Corp 半導体装置及びその製造方法
JP2011086709A (ja) * 2009-10-14 2011-04-28 Toshiba Corp 固体撮像装置及びその製造方法
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JP2014086596A (ja) * 2012-10-24 2014-05-12 Olympus Corp 半導体装置、撮像装置、半導体基板の検査方法及び半導体装置の製造方法
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JP5764191B2 (ja) * 2013-12-16 2015-08-12 ラピスセミコンダクタ株式会社 半導体装置
EP2889901B1 (en) 2013-12-27 2021-02-03 ams AG Semiconductor device with through-substrate via and corresponding method
JP6187320B2 (ja) * 2014-03-03 2017-08-30 株式会社デンソー 受光チップ
TWI676280B (zh) * 2014-04-18 2019-11-01 日商新力股份有限公司 固體攝像裝置及具備其之電子機器
TWI628723B (zh) * 2015-03-10 2018-07-01 精材科技股份有限公司 一種晶片尺寸等級的感測晶片封裝體及其製造方法
JP6138859B2 (ja) * 2015-06-12 2017-05-31 ラピスセミコンダクタ株式会社 半導体装置
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