TW200828580A - Solid-state imaging device - Google Patents

Solid-state imaging device Download PDF

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Publication number
TW200828580A
TW200828580A TW096139885A TW96139885A TW200828580A TW 200828580 A TW200828580 A TW 200828580A TW 096139885 A TW096139885 A TW 096139885A TW 96139885 A TW96139885 A TW 96139885A TW 200828580 A TW200828580 A TW 200828580A
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TW
Taiwan
Prior art keywords
electrode pad
solid
semiconductor substrate
imaging device
state imaging
Prior art date
Application number
TW096139885A
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English (en)
Chinese (zh)
Other versions
TWI351758B (enExample
Inventor
Masami Suzuki
Yoshimichi Harada
Yoshihiro Nabe
Yuji Takaoka
Masaaki Takizawa
Chiaki Sakai
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200828580A publication Critical patent/TW200828580A/zh
Application granted granted Critical
Publication of TWI351758B publication Critical patent/TWI351758B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Wire Bonding (AREA)
TW096139885A 2006-11-30 2007-10-24 Solid-state imaging device TW200828580A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006323042A JP4403424B2 (ja) 2006-11-30 2006-11-30 固体撮像装置

Publications (2)

Publication Number Publication Date
TW200828580A true TW200828580A (en) 2008-07-01
TWI351758B TWI351758B (enExample) 2011-11-01

Family

ID=39474746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096139885A TW200828580A (en) 2006-11-30 2007-10-24 Solid-state imaging device

Country Status (4)

Country Link
US (1) US7851880B2 (enExample)
JP (1) JP4403424B2 (enExample)
CN (1) CN101192620A (enExample)
TW (1) TW200828580A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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TWI387083B (zh) * 2007-12-27 2013-02-21 Toshiba Kk 包含貫穿孔電極與光傳輸基板的半導體封裝
TWI563319B (en) * 2010-11-09 2016-12-21 Tpk Touch Solutions Inc Touch panel stackup

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JP4713602B2 (ja) * 2008-02-21 2011-06-29 パナソニック株式会社 基板モジュールおよびその製造方法ならびに電子機器
JP2009283503A (ja) * 2008-05-19 2009-12-03 Panasonic Corp 半導体装置及びその製造方法
JP5409617B2 (ja) 2008-05-29 2014-02-05 森永乳業株式会社 生残菌数推定方法及び保証菌数の設定方法
JP5175620B2 (ja) * 2008-05-29 2013-04-03 シャープ株式会社 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
JP2009295676A (ja) * 2008-06-03 2009-12-17 Oki Semiconductor Co Ltd 半導体装置及びその製造方法
JP5356742B2 (ja) * 2008-07-10 2013-12-04 ラピスセミコンダクタ株式会社 半導体装置、半導体装置の製造方法および半導体パッケージの製造方法
JP2010040862A (ja) * 2008-08-06 2010-02-18 Fujikura Ltd 半導体装置
JP5455538B2 (ja) * 2008-10-21 2014-03-26 キヤノン株式会社 半導体装置及びその製造方法
JP5434306B2 (ja) * 2008-10-31 2014-03-05 日本電気株式会社 半導体装置及び半導体装置の製造方法
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JP2010114390A (ja) 2008-11-10 2010-05-20 Panasonic Corp 半導体装置および半導体装置の製造方法
JP4659875B2 (ja) * 2008-11-25 2011-03-30 パナソニック株式会社 半導体装置
JP5146307B2 (ja) * 2008-12-26 2013-02-20 パナソニック株式会社 半導体装置
CN102224579B (zh) * 2008-11-25 2013-12-04 松下电器产业株式会社 半导体装置及电子设备
DE102008054765A1 (de) * 2008-12-16 2010-06-24 Robert Bosch Gmbh Bauteil mit einer Durchkontaktierung und ein Verfahren zur Herstellung eines solchen Bauteils
JP5438980B2 (ja) * 2009-01-23 2014-03-12 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP2010206158A (ja) 2009-02-04 2010-09-16 Panasonic Corp デバイス
US9142586B2 (en) 2009-02-24 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for backside illuminated image sensor
JP5773379B2 (ja) * 2009-03-19 2015-09-02 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP2010251558A (ja) * 2009-04-16 2010-11-04 Toshiba Corp 固体撮像装置
JP2011009645A (ja) * 2009-06-29 2011-01-13 Toshiba Corp 半導体装置及びその製造方法
JP2011086709A (ja) * 2009-10-14 2011-04-28 Toshiba Corp 固体撮像装置及びその製造方法
JP2011187754A (ja) * 2010-03-10 2011-09-22 Toshiba Corp 固体撮像装置及びその製造方法
US8872293B2 (en) * 2011-02-15 2014-10-28 Sony Corporation Solid-state imaging device and method of manufacturing the same and electronic apparatus
JP5791461B2 (ja) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP5832852B2 (ja) 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
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JP6187320B2 (ja) * 2014-03-03 2017-08-30 株式会社デンソー 受光チップ
TWI676280B (zh) * 2014-04-18 2019-11-01 日商新力股份有限公司 固體攝像裝置及具備其之電子機器
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JP6138859B2 (ja) * 2015-06-12 2017-05-31 ラピスセミコンダクタ株式会社 半導体装置
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JP6780277B2 (ja) * 2016-03-29 2020-11-04 株式会社ニコン 基板
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TWI875314B (zh) * 2016-06-03 2025-03-01 日商大日本印刷股份有限公司 貫通電極基板及其製造方法、以及安裝基板
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
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