TWI351748B - High q factor integrated circuit inductor - Google Patents

High q factor integrated circuit inductor Download PDF

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Publication number
TWI351748B
TWI351748B TW099116268A TW99116268A TWI351748B TW I351748 B TWI351748 B TW I351748B TW 099116268 A TW099116268 A TW 099116268A TW 99116268 A TW99116268 A TW 99116268A TW I351748 B TWI351748 B TW I351748B
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Taiwan
Prior art keywords
inductor
layer
dielectric layer
top surface
upper portion
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Application number
TW099116268A
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English (en)
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TW201036127A (en
Inventor
Daniel C Edelstein
Panayotis C Andricacos
John M Cotte
Hariklia Deligianni
John H Magerlein
Kevin S Petrarca
Kenneth J Stein
Richard P Volant
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Ibm
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Publication of TW201036127A publication Critical patent/TW201036127A/zh
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Publication of TWI351748B publication Critical patent/TWI351748B/zh

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Description

1351748 六、發明說明： 【發明所屬之技術領域】 本發明係關於積體電路，特別是， faCt〇r(Qfactor))的電感器結構、製造 咸P ^quahty 及將高Q值之賴ϋ結盤合至赫魏構的方法 【先前技術】 許多用於麵(RF)制±的频電路齡 電感器通常在積體電路晶片的表:吏:n: Ϊ將會增加。電感器的IS; E1是損失^電^之Hi存於電感器之反應部分的總能量， 表ΐ為5-p分的總能量。電感器的卩值亦可 ί Ξί = ΐ 。是共振頻率，L是電感值，R是電 感。。的a阻H式的含義為：Q會隨著R減少而增加。 可以屬、寬金屬線或厚金屬線來製造電感器 社田ίΪί感：的電阻。然而’使用寬金屬線的電感器卻會 攸田、里的積體Ϊ路晶片表面，且通常也會大幅限制積體電 3益的合適區域。尤其在使用高導電率金屬以 在後、，貝南導電率、厚金屬電感器和積體電路的互連層 (χ>_〇η〇η)Βτ ’厚金屬電感器的製造很有問題。因此， 電率金屬形成高Q值、厚金屬電感器，以及用以 上貝體電路{之電感器的互連層製造技術的方法與整合 方案。 【發明内容】 本發明的第—方面為形成電感 器的方法，此方法按所列 4 1351748 # 順序包含：⑷提供一半導體基板；⑼在此基板的-頂面上形 成-介電層⑻在此介電射職—下方縣；（d)在此介電 . 上碱—阻抗層；⑹在雜抗層上方溝 渠’此上方溝渠和下方溝騎齊，此上方溝渠的—底部對下 方溝渠為齡；及_-導駐全填充下方賴及至少部分 填充上方溝渠以形成電感器。 本發明的第一方面為形成一電感器的方法，此方法按所 列順序包含：⑻提供-铸縣板；（b)在此紐的一頂面上 # 形成了介電層；（c)在此介電層中形成一下方溝渠；（d)在此下 方溝渠中及介電層之一頂面之上形成一共形導電襯墊 (confbmial conductive Iiner);⑹在此導電襯墊之上形成一共形 銅(Q0晶種層(seed layer); (f)在基板上形成一阻抗層；（g)^此 阻抗層中形成一上方溝渠，此上方溝渠和下方溝渠對齊，此 上f溝渠的一底部對下方溝渠為開啟；（h)電鍍(eiectroplate)Cu ^完全填充下方溝渠及至少部分填充上方溝渠以形成電感 器，®移除阻抗層；①在所有暴露的Cu表面之上，選擇性地 开/成導電保s蒦層(conductive passivation layer);及(k)自導電 襯墊覆蓋介電層的表面之區域，選擇性地移除該Cu晶種層， # 以及自介電層的表面移除導電襯墊。 。。本發明的第三方面為一半導體結構，該結構包含：一電 感态，其具有：一頂面、一底面及側壁、該電感器的一下方 部分延伸一固定距離至形成於一半導體基板上之—介電層、 及一上方部分延伸至該介電層之上；以及電性接觸該電感器 的裝置。 【實施方式】 圖1為根據本發明第一實施例所繪示的電感器及接觸墊 5 D5約5至50微米。 帝Ϊ 5C中，移除阻抗層285(請見圖5B)。本發明並不隈制 器105之線圈的寬度W1及間隔SbWl及S1的下ρρ爲 可ΐ 光阻系統遮罩技術、曝光工具及波 面積總量。㈣讀體電路的 微米。 例子中W1約2至30微米及S1約2至20 被聂ί 現藉由如濕儀刻(WetetCh)，將晶種層奶 銨L 移除。在—例子中’濕侧為硫酸、過硫酸 不合大=Ulfate)及水的混合物。Cu的侧率慢到足以 if ΙίΪϊί戈底切電感器105或其他電鑛的Cu結構，即可 達到對日日種層275的可控制移除。 •沾圖iD中，在晶種層275的所有暴露表面之上(但不在暴 ^ ^ 265上選擇性的電鑛一第一導電保護層290。在 % 265™Μ ίί29° —上）’k擇性電鍍一第二導電保護層295。在一例子中，第 雷位J保錢為約2_人至6。。。人厚的鎳(Ni)，第二導 ?、濩層295為約12〇〇 A至4000 A厚的金(au)。可以使用- 導電保護層。第一導電保護層290及第二導電保護層 等同於圖1、2及3所示及上述的導電保護層125。 圖5E中’移除所有暴露的襯墊265。在襯墊265為τ&ν/τ& Rif。—導電保護層295為&的例子中，可以使用基於氟的 圖5F中，塗上一毯狀有機保護層3〇〇，並以微影蝕刻的

Claims (1)

  1. 案號：99116268 100年6月16日修正-替換頁 七、申請專利範圍： 1. 一種半導體結構，其包含： 部八二fi11 ’具有—頂面、—底面及侧壁、該電感器的一下方 :二J人但並未完全通過—半導體基板上之單—介電層、以 古的r上方部分延伸至該介電層之上，該電感器的該下 。。二为匕3—導電襯墊及一核心導體(coreconductor)，及該電感 盗的該上方部分僅由該核心導體構成；以及 電性接觸該電感器的裝置。 21清求項1所述之該結構，其中該上方部分更包含一導電保護 曰，位在該電感器之該上方部分之一頂面及側壁上。 3. 如明求項1所述之該結構，其巾該诚^具有由大於約5微米 之該側壁所定義的一高度。 4. 如請求項1所述之該結構，其中該電感器延伸而平行於在一螺 旋形線圈(coil)中之該介電層的一頂面。 5. 如請求項4所述之該結構，其中該電感器為約2至3〇微米寬， 及該螺旋形線圈鄰接的複數個線圈間隔約2至2〇微米。 6. 如請求項1所述之該結構，其中該電感器具有大於約〇 511只的 一電感(inductance)。 7.如請求項1所述之該結構，其+該電感器具有大於約25的一 值。 ^請求们嫩綱，其懷獅妓㈣㈣一 Q 1351748 案號：99116268 100年6月16曰修正·替換頁 9.如請求項1所述之該結構，更包含： 二I/O端塾’形成於該半導體基板中；以及 一凸起接觸墊’電性接觸該I/O端墊，該凸起接觸墊具有一 頂面、-底面及側壁、該電感器的一下方部分延伸該固定 距離到在一半導體基板上形成之該介電層中、以及一上方 部分延伸到該介電層上方。 接觸墊之該上方部在該&起 結構，其中該導電保護層包含_抓層或 £ A1 ^ Au ^ 墊限制冶金層，以綱層上的一概 20 1J31/4δ 案號：99116268 100年Μ 16日修正·替換頁 多層’且該焊球包含Pb或Pb/Sn合金。 賴議獅在和該凸 該 8.如明求項9所述之該結構，其中相^ 電感器的-頂面高於的該凸起接觸塾對之^川面電層之頂面’ 19. 一種半導體結構，其包含： 面、—底面及側壁、該電感器的-下方部分 ϊΠΐΐ通過一半導體基板上之單-介電層、以及該 電感斋的-上方。h延伸至該介電層之上， 含塾及一核心導體，及該電感器的該“ 該核心導體包含^，及該襯塾包含咖及η 20. —種半導體結構，其包含： 器’具有—頂面、—底面及側壁、該電感器的一下方部 么k申進人但絲完全通過—半導體基板上之單—介電層、以 的:上方部分延伸至該介電層之上，該電感器“下方 部分包=導電襯墊及-核心導體，及該電感器的該 由該核心導體構成；以及 丨刀僮 -導^護層’位在該電感H之該上转分之—頂 上，其包含一 Ni層或在一 Ni層之上的一 Au層。 21. —種半導體結構，其包含： -電感器’具有-頂面、-底面及側壁、該電感器的一下 分延伸進入但並未完全通過一半導體基板上之單一介、 該電感器的-上方部分延伸至該介電層之上，該下方^延伸小 21 1351748 案號：99116268 100年6月16曰修正-替換頁 於3微米的一距離至該介電層中 22. —種半導體結構，其包含： 八证有r71面、一底面及側壁、該電感器的一下方部 的二ΐίί全通過一半導體基板上之單-介電層、以及 該電感裔的上方。Ρ分延伸至該介電層之上；以及 八雷’其自該電感11的該底面延伸通過該 "電層’並電性地接觸通過辭導體基板中冶金層。 23. 如請求項22所述之該結構，其中 之該頂面，相對於不在該介声窗之卜糾帝二上⑽電感益 更接近該介電層的層固之上的該電感㈣該頂面部分， 24. —種半導體結構，其包含： \ 感器/具有—頂面、—底面及側壁、該電感器的-下方部 人但並未完全通過—料體基板上之單—介電層、以^ 該電感器的一上方部分延伸至該介電層之上. 電性接觸該電感器的裝置；以及曰 ， =的至^部分被覆蓋在—保護層，該保護層 電概f 之上之一共形晶種層之上。 守电概墊 25.如請求項24所述之該結構，其中該導電襯墊包含— t成’該共形晶種層包含cu，且該保護層包含—初/ 或在一 Νι層之上的一 Au層。 層 導電 ==斤Γ叫更包含-_或八_ 22 1351748 案號·· 99116268 100年6月16日修正-替換頁 = ===該保護層上的-侧 Cr 一或更多層，焊球包含Pb或Pb/Snf金1日所組成群組之 接觸墊的-頂面/其巾該電感11的該躺係在和該 之一頂面 23
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CN1649087A (zh) 2005-08-03
TW200537671A (en) 2005-11-16
US7068138B2 (en) 2006-06-27
JP2005217419A (ja) 2005-08-11
US20050167780A1 (en) 2005-08-04
US7638406B2 (en) 2009-12-29
US20100047990A1 (en) 2010-02-25
US7829427B2 (en) 2010-11-09
TW201036127A (en) 2010-10-01
TWI351747B (en) 2011-11-01
US20060105534A1 (en) 2006-05-18
JP3996602B2 (ja) 2007-10-24
CN100341112C (zh) 2007-10-03

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