TWI576870B - 電感結構及其製作方法 - Google Patents

電感結構及其製作方法 Download PDF

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Publication number
TWI576870B
TWI576870B TW103127644A TW103127644A TWI576870B TW I576870 B TWI576870 B TW I576870B TW 103127644 A TW103127644 A TW 103127644A TW 103127644 A TW103127644 A TW 103127644A TW I576870 B TWI576870 B TW I576870B
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Taiwan
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layer
barrier layer
copper
diffusion barrier
photoresist
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TW103127644A
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TW201508783A (zh
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賴偉銘
胡毓文
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精材科技股份有限公司
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Description

電感結構及其製作方法
本發明是有關一種電感結構及一種電感結構的製作方法。
習知的電感結構可包含矽基板與複數個銅塊。矽基板具有複數個焊墊(bond pad)。銅塊以電鍍的方式分別形成於焊墊上，具有高頻傳輸的功能。在後續製程中，錫球(BGA)或導電凸塊可透過銅塊與矽基板的焊墊電性連接。由於鍚鉛材料無法直接黏著於銅塊，所以當銅塊電鍍完成後，需再依序電鍍鎳層與金層。其中鎳層具有阻值高的特性，可防止金層與銅塊在高溫環境中互相熔合，而金層可防止銅塊氧化。
藉由鎳層與金層的雖可讓錫球或導電凸塊黏著於銅塊，但實際上在電感結構中，僅有少數的銅塊在後續製程(例如凸塊製程或植錫球製程)需與導電凸塊或錫球電性連接，大多數的銅塊並不需電性連接錫球或導電凸塊。然而，一般而言，電感結構在製作時，因為製程能力不足， 只能在每一銅塊上均電鍍鎳層與金層。
如此一來，不僅會造成材料(例如金)的浪費，且所有的銅塊上均電鍍鎳層與金層，會造成電感結構的線路總電阻值升高，造成效率下降，使電感結構的電感品質係數難以提升。
本發明之一技術態樣為一種電感結構。
根據本發明一實施方式，一種電感結構包含基板、保護層、圖案化的導電層、複數個銅塊、擴散阻障層與抗氧化層。基板具有複數個焊墊。保護層位於基板與焊墊上。保護層具有複數個保護層開口。焊墊分別由保護層開口露出。導電層位於焊墊與保護層緊鄰保護層開口的表面上。銅塊位於導電層上。擴散阻障層位於銅塊的至少一者上，使覆蓋擴散阻障層之銅塊位於擴散阻障層與導電層之間。抗氧化層位於擴散阻障層上。
在本發明一實施方式中，上述電感結構更包含非金屬阻隔層。非金屬阻隔層位於保護層、銅塊、擴散阻障層與抗氧化層上。非金屬阻隔層具有非金屬阻隔層開口，且抗氧化層由非金屬阻隔層開口露出。
在本發明一實施方式中，上述非金屬阻隔層的材質包含氧化物或氮化物。
在本發明一實施方式中，上述電感結構更包含金屬阻隔層。金屬阻隔層覆蓋於銅塊、擴散阻障層與抗氧化層 的表面上。
在本發明一實施方式中，上述金屬阻隔層的材質包含金。
在本發明一實施方式中，上述擴散阻障層的材質包含鎳。
在本發明一實施方式中，上述抗氧化層的材質包含金。
本發明之另一技術態樣為一種電感結構的製作方法。
根據本發明一實施方式，一種電感結構的製作方法包含下列步驟：(a)提供具有複數個焊墊的基板。(b)形成具有複數個保護層開口的保護層於基板與焊墊上，使焊墊分別由保護層開口露出。(c)形成導電層於焊墊與保護層上。(d)形成圖案化的第一光阻層於導電層上，使緊鄰保護層開口的導電層由第一光阻層的複數個第一光阻層開口露出。(e)分別形成複數個銅塊於第一光阻層開口中的導電層上。(f)形成圖案化的第二光阻層於第一光阻層上，其中第二光阻層的第二光阻層開口對準於銅塊的至少一者，使銅塊的至少一者由第二光阻層開口與對應的第一光阻層開口露出。(g)依序形成擴散阻障層與抗氧化層於露出第二光阻層開口的銅塊上。(h)去除第一光阻層、第二光阻層及未被銅塊覆蓋的導電層。
在本發明一實施方式中，上述電感結構的製作方法更包含：形成非金屬阻隔層於保護層、銅塊、擴散阻障層 與抗氧化層上。圖案化非金屬阻隔層，使抗氧化層由非金屬阻隔層的非金屬阻隔層開口露出。
在本發明一實施方式中，上述電感結構的製作方法更包含形成金屬阻隔層覆蓋銅塊、擴散阻障層與抗氧化層的表面上。
在本發明一實施方式中，上述形成金屬阻隔層於銅塊、擴散阻障層與抗氧化層的表面上的步驟包含：化鍍金屬阻隔層於銅塊、擴散阻障層與抗氧化層的表面上。
在本發明一實施方式中，上述步驟(b)包含圖案化保護層，使保護層具有保護層開口。
在本發明一實施方式中，上述步驟(e)包含電鍍銅塊於第一光阻層開口中的保護層上。
在本發明一實施方式中，上述步驟(g)包含依序電鍍擴散阻障層與抗氧化層於露出第二光阻層開口的銅塊上。
在本發明一實施方式中，上述步驟(h)包含蝕刻未被銅塊覆蓋的導電層。
在本發明上述實施方式中，電感結構及其製作方法可選擇性地在銅塊上形成擴散阻障層與抗氧化層，讓需於後續製程(例如凸塊製程或植錫球製程)電性連接導電凸塊或錫球的銅塊才形成擴散阻障層及抗氧化層，其它銅塊則不形成擴散阻障層及抗氧化層。如此一來，電感結構及其製作方法不僅可節省擴散阻障層與抗氧化層的材料花費，且能降低電感結構的線路總電阻值，造成效率提升，使電 感結構的電感品質係數得以提升。
100‧‧‧電感結構
100a‧‧‧電感結構
100b‧‧‧電感結構
110‧‧‧基板
112‧‧‧焊墊
120‧‧‧保護層
122‧‧‧保護層開口
130‧‧‧導電層
140‧‧‧銅塊
150‧‧‧擴散阻障層
160‧‧‧抗氧化層
170‧‧‧非金屬阻隔層
172‧‧‧非金屬阻隔層開口
180‧‧‧金屬阻隔層
192‧‧‧第一光阻層
194‧‧‧第一光阻層開口
196‧‧‧第二光阻層
196a‧‧‧第二光阻層
198‧‧‧第二光阻層開口
198a‧‧‧第二光阻層開口
2-2‧‧‧線段
210‧‧‧線路層
S2‧‧‧步驟
S1‧‧‧步驟
S4‧‧‧步驟
S3‧‧‧步驟
S6‧‧‧步驟
S5‧‧‧步驟
S8‧‧‧步驟
S7‧‧‧步驟
第1圖繪示根據本發明一實施方式之電感結構的俯視圖。
第2圖繪示第1圖之電感結構沿線段2-2的剖面圖。
第3圖繪示根據本發明另一實施方式之電感結構的剖面圖，其剖面位置與第2圖相同。
第4圖繪示根據本發明一實施方式之電感結構的製作方法的流程圖。
第5圖繪示第4圖之焊墊分別由保護層開口露出後的剖面圖。
第6圖繪示第5圖之焊墊與保護層形成導電層後的剖面圖。
第7圖繪示第6圖之導電層形成圖案化的第一光阻層後的剖面圖。
第8圖繪示第7圖之第一光阻層開口中的導電層形成銅塊後的剖面圖。
第9圖繪示第8圖之第一光阻層形成圖案化的第二光阻層後的剖面圖。
第10圖繪示第9圖之露出第二光阻層開口的銅塊依序形成擴散阻障層與抗氧化層後的剖面圖。
第11圖繪示第10圖之第一光阻層、第二光阻層及未 被銅塊覆蓋的導電層被去除後的剖面圖。
第12A圖至第12D圖繪示根據本發明另一實施方式之電感結構製作時的剖面圖。
以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。
第1圖繪示根據本發明一實施方式之電感結構100的俯視圖。第2圖繪示第1圖之電感結構100沿線段2-2的剖面圖。為求簡潔，本文中所有剖面圖均未繪示第1圖的線路層210。同時參閱第1圖與第2圖，電感結構100包含基板110、保護層120、圖案化的導電層130、複數個銅塊140、擴散阻障層150與抗氧化層160。其中，基板110具有複數個焊墊112。保護層120位於基板110與焊墊112上。保護層120具有複數個保護層開口122，且焊墊112分別由保護層開口122露出。導電層130位於焊墊112朝向保護層開口122的表面上，與保護層120緊鄰保護層開口122的表面上。銅塊140位於導電層130上。擴散阻障層150位於銅塊140的至少一者上，使覆蓋擴散阻障層150之銅塊140位於擴散阻障層150與導電層130之間。抗氧 化層160位於擴散阻障層150相對銅塊140的表面上。其中，擴散阻障層150與抗氧化層160可透過電鍍(electrolytic deposition)的方式形成於銅塊140上。
在本實施方式中，基板110的材質可以包含矽。保護層120的材質可以包含聚合物材料、氧化物(例如二氧化矽)或氮化物。焊墊112的材質可以包含鋁。導電層130的材質可以包含鈦與銅。擴散阻障層150的材質可以包含鎳，具有阻值高的特性，能防止抗氧化層160與銅塊140在高溫環境中互相熔合。抗氧化層160的材質可以包含金，可防止銅塊140氧化。然而，上述材料並不以限制本發明。
此外，電感結構100還包含非金屬阻隔層170。非金屬阻隔層170位於保護層120、銅塊140、擴散阻障層150與抗氧化層160上，且非金屬阻隔層170具有非金屬阻隔層開口172，使抗氧化層160可由非金屬阻隔層開口172露出。非金屬阻隔層170可阻隔水氣與灰塵進入電感結構100中，避免銅塊140與擴散阻障層150氧化。在本實施方式中，非金屬阻隔層170可以包含聚合物材料、氧化物(例如二氧化矽)或氮化物，但並不以限制本發明。
電感結構100在後續製程中，例如凸塊(bumping)製程或植錫球(BGA)製程，導電凸塊或錫球可黏著於抗氧化層160上，使導電凸塊或錫球可透過設有擴散阻障層150與抗氧化層160的銅塊140(如第2圖左側銅塊)電性連接導電層130與焊墊112。未設有擴散阻障層150與抗氧化層160的銅塊140(如第2圖右側銅塊)則由非金屬阻隔層170 覆蓋，不於後續製程黏著導電凸塊或錫球。如此一來，電感結構100可節省擴散阻障層150與抗氧化層160的材料花費，且能降低電感結構100的線路總電阻值，造成效率提升，使電感結構100的電感品質係數得以提升。
第3圖繪示根據本發明另一實施方式之電感結構100a的剖面圖，其剖面位置與第2圖相同。電感結構100a包含基板110、保護層120、複數個銅塊140、圖案化的導電層130、擴散阻障層150與抗氧化層160。與第2圖實施方式不同的地方在於：電感結構100a不包含非金屬阻隔層170(見第2圖)，但包含金屬阻隔層180。金屬阻隔層180覆蓋於銅塊140、擴散阻障層150與抗氧化層160的表面上。金屬阻隔層180的材質包含金，可透過化鍍(chemical plating)的方式形成於銅塊140上。金屬阻隔層180可避免銅塊140與擴散阻障層150氧化。
第4圖繪示根據本發明一實施方式之電感結構的製作方法的流程圖。首先在步驟S1中，提供具有複數個焊墊的基板。接著在步驟S2中，形成具有複數個保護層開口的保護層於基板與焊墊上，使焊墊分別由保護層開口露出。之後在步驟S3中，形成導電層於焊墊與保護層上。接著在步驟S4中，形成圖案化的第一光阻層於導電層上，使緊鄰保護層開口的導電層由第一光阻層的複數個第一光阻層開口露出。接著在步驟S5中，分別形成複數個銅塊於第一光阻層開口中的導電層上。之後在步驟S6中，形成圖案化的第二光阻層於第一光阻層上，其中第二光阻層的第二 光阻層開口對準於銅塊的至少一者，使銅塊的至少一者由第二光阻層開口與對應的第一光阻層開口露出。接著在步驟S7中，依序形成擴散阻障層與抗氧化層於露出第二光阻層開口的銅塊上。最後在步驟S8中，去除第一光阻層、第二光阻層及未被銅塊覆蓋的導電層。
在以下敘述中，將敘述上述電感結構之製造方法的各步驟。
第5圖繪示第4圖之焊墊112分別由保護層開口122露出後的剖面圖。同時參閱第4圖與第5圖，先提供具有複數個焊墊112的基板110，並於基板110與焊墊112上形成具有複數個保護層開口122的保護層120，使焊墊112分別由保護層開口122露出。保護層120可透過圖案化製程，使保護層120具有保護層開口122。圖案化製程可包含曝光、顯影與蝕刻製程。
第6圖繪示第5圖之焊墊112與保護層120形成導電層130後的剖面圖。同時參閱第5圖與第6圖，待焊墊112分別由保護層開口122露出後，導電層130可透過濺鍍(sputter)的方式形成於焊墊112與保護層120上。
第7圖繪示第6圖之導電層130形成圖案化的第一光阻層192後的剖面圖。同時參閱第6圖與第7圖，待導電層130形成於焊墊112與保護層120上後，可於導電層130上形成圖案化的第一光阻層192，使緊鄰保護層開口122的導電層130由第一光阻層192的複數個第一光阻層開口194露出。
第8圖繪示第7圖之第一光阻層開口194中的導電層130形成銅塊140後的剖面圖。同時參閱第7圖與第8圖，待導電層130上形成圖案化的第一光阻層192後，可於第一光阻層開口194中的導電層130分別形成銅塊140。其中，銅塊140可利用電鍍的方式形成於第一光阻層開口194中的導電層130上。
第9圖繪示第8圖之第一光阻層192形成圖案化的第二光阻層196後的剖面圖。同時參閱第8圖與第9圖，待第一光阻層開口194中的導電層130分別形成銅塊140後，可形成圖案化的第二光阻層196於第一光阻層192上，其中第二光阻層196的第二光阻層開口198對準於銅塊140的至少一者，使銅塊140的至少一者由第二光阻層開口198與對應的第一光阻層開口194露出。
第10圖繪示第9圖之露出第二光阻層開口198的銅塊140依序形成擴散阻障層150與抗氧化層160後的剖面圖。同時參閱第9圖與第10圖，待銅塊140的至少一者由第二光阻層開口198與對應的第一光阻層開口194露出後，可依序形成擴散阻障層150與抗氧化層160於露出第二光阻層開口198的銅塊140上。其中，擴散阻障層150與抗氧化層160可利用電鍍的方式依序形成於露出第二光阻層開口198的銅塊140上。
第11圖繪示第10圖之第一光阻層192、第二光阻層196及未被銅塊140覆蓋的導電層130被去除後的剖面圖。同時參閱第10圖與第11圖，待擴散阻障層150與抗 氧化層160依序形成於露出第二光阻層開口198的銅塊140後，可去除第一光阻層192、第二光阻層196及未被銅塊140覆蓋的導電層130，而得到第11圖的結構。其中，未被銅塊140覆蓋的導電層130例如可經蝕刻製程去除。
同時參閱第2圖與第11圖，待第一光阻層192、第二光阻層196及未被銅塊140覆蓋的導電層130去除後，可於保護層120、銅塊140、擴散阻障層150與抗氧化層160上形成非金屬阻隔層170。接著可圖案化非金屬阻隔層170，使非金屬阻隔層170具有對準銅塊140的非金屬阻隔層開口172。如此一來，抗氧化層160便可由非金屬阻隔層開口172露出，得到第2圖的電感結構100。
同時參閱第3圖與第11圖，待第一光阻層192、第二光阻層196及未被銅塊140覆蓋的導電層130去除後，可形成金屬阻隔層180覆蓋於銅塊140、擴散阻障層150與抗氧化層160的表面上。如此一來，便可得到第3圖的電感結構100a。其中金屬阻隔層180可透過化鍍的方式形成於銅塊140、擴散阻障層150與抗氧化層160的表面上。
與習知技述相較，電感結構及其製作方法可選擇性地在銅塊上形成擴散阻障層與抗氧化層，讓需於後續製程(例如凸塊製程或植錫球製程)電性連接導電凸塊或錫球的銅塊才形成擴散阻障層及抗氧化層，其它銅塊則不形成擴散阻障層及抗氧化層。如此一來，電感結構及其製作方法不僅可節省擴散阻障層與抗氧化層的材料花費，且能降低電感結構的線路總電阻值，造成效率提升，使電感結構的 電感品質係數得以提升。
第12A圖至第12D圖繪示根據本發明另一實施方式之電感結構100b製作時的剖面圖。在本實施方式中，第12A圖之前的製作流程與第5圖至第8圖相同，不重複贅述。待第8圖之第一光阻層開口194中的導電層130分別形成銅塊140後，可去除第8圖之第一光阻層192，而得到第12A圖的結構。接著，便可於第12A圖的導電層130上形成圖案化的第二光阻層196a，使得至少一銅塊140可從第二光阻層開口198a裸露，而得到第12B圖的結構。之後，便可於第12C圖從第二光阻層開口198a的銅塊140上以電鍍的方式形成擴散阻障層150與抗氧化層160，而得到第12C圖的結構。
因此，待將第12C圖之第二光阻層196a去除後，便可得到第12D圖之電感結構100b。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
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Claims (10)

  1. 一種電感結構，包含：一基板，具有複數個焊墊；一保護層，位於該基板與該些焊墊上，該保護層具有複數個保護層開口，該些焊墊分別由該些保護層開口露出；一圖案化的導電層，位於該些焊墊與該保護層緊鄰該些保護層開口的表面上；複數個銅塊，位於該導電層上，每一該些銅塊具有一頂面與鄰接該頂面的一側壁；一擴散阻障層，選擇性地位於該些銅塊的該些頂面上，使覆蓋該擴散阻障層之該些銅塊位於該擴散阻障層與該導電層之間，其中只有一選擇數量的該些銅塊其上具有該擴散阻障層，其餘該些銅塊其上不具該擴散阻障層；一抗氧化層，位於該擴散阻障層上；以及一金屬阻隔層，位於該抗氧化層上與該選擇數量的該些銅塊的該些側壁上，使得該金屬阻隔層完全包覆該選擇數量的該些銅塊。
  2. 如請求項1所述之電感結構，其中該金屬阻隔層的材質包含金。
  3. 如請求項1所述之電感結構，其中該擴散阻障層的材質包含鎳。
  4. 如請求項1所述之電感結構，其中該抗氧化層的材質包含金。
  5. 一種電感結構的製作方法，包含下列步驟：(a)提供具有複數個焊墊的一基板；(b)形成具有複數個保護層開口的一保護層於該基板與該些焊墊上，使該些焊墊分別由該些保護層開口露出；(c)形成一導電層於該些焊墊與該保護層上；(d)形成一圖案化的第一光阻層於該導電層上，使緊鄰該些保護層開口的該導電層由該第一光阻層的複數個第一光阻層開口露出；(e)分別形成複數個銅塊於該些第一光阻層開口中的該導電層上，其中每一該些銅塊具有一頂面與鄰接該頂面的一側壁；(f)形成一圖案化的第二光阻層於該第一光阻層上，其中該第二光阻層的至少一第二光阻層開口對準於該些銅塊的至少一者，使該些銅塊的至少一者由該第二光阻層開口與對應的該第一光阻層開口露出；(g)依序形成一擴散阻障層與一抗氧化層於露出該第二光阻層開口的該銅塊上，使該擴散阻障層與該抗氧化層選擇性地位於該些銅塊的該些頂面上，其中只有一選擇數量的該些銅塊其上具有該擴散阻障層與該抗氧化層，其餘該些銅塊其上不具該擴散阻障層與該抗氧化層；(h)去除該第一光阻層、該第二光阻層及未被該些銅 塊覆蓋的該導電層；以及(i)形成一金屬阻隔層於該抗氧化層上與該選擇數量的該些銅塊的該些側壁上，使得該金屬阻隔層完全包覆該選擇數量的該些銅塊。
  6. 如請求項5所述之電感結構的製作方法，其中形成該金屬阻隔層於該些銅塊、該擴散阻障層與該抗氧化層的表面上的步驟包含：化鍍該金屬阻隔層於該些銅塊、該擴散阻障層與該抗氧化層的表面上。
  7. 如請求項5所述之電感結構的製作方法，其中該步驟(b)包含：圖案化該保護層，使該保護層具有該些保護層開口。
  8. 如請求項5所述之電感結構的製作方法，其中該步驟(e)包含：電鍍該些銅塊於該些第一光阻層開口中的該導電層上。
  9. 如請求項5所述之電感結構的製作方法，其中該步驟(g)包含：依序電鍍該擴散阻障層與該抗氧化層於露出該第二光阻層開口的該銅塊上。
  10. 如請求項5所述之電感結構的製作方法，其中該步驟(h)包含：蝕刻未被該些銅塊覆蓋的該導電層。
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