JP3996602B2 - インダクタの製造方法並びにインダクタ及びはんだボールの製造方法。 - Google Patents
インダクタの製造方法並びにインダクタ及びはんだボールの製造方法。 Download PDFInfo
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- JP3996602B2 JP3996602B2 JP2005021309A JP2005021309A JP3996602B2 JP 3996602 B2 JP3996602 B2 JP 3996602B2 JP 2005021309 A JP2005021309 A JP 2005021309A JP 2005021309 A JP2005021309 A JP 2005021309A JP 3996602 B2 JP3996602 B2 JP 3996602B2
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Description
105 インダクタ
110A、110B 一体ビア
115 I/Oターミナル・パッド
120 ビア
125 導電性不動態化層
130 パッド限定メタラジ層、PLM層
135 はんだボール
140 導電性不動態化パッド、パッド
200 半導体基板
205A、205B アンダーパス・ワイヤ
210 上表面
215A、215B 上表面
220 上表面
225 第1の誘電層
230 第2の誘電層
235 上表面
240 第3の誘電層
245 上表面
250A、250B トレンチ
260 トレンチ
265 コンフォーマル・ライナ、ライナ
270 上表面
275 コンフォーマル・シード層、シード層
280 上表面
285 レジスト層
290 第1の導電性不動態化層
295 第2の導電性不動態化層
300 ブラケット有機不動態化層
305 コンタクト・パッド
310 コンタクト・パッド
D1、D2、D3、D4、D5 深さ
W1 コイルの幅
S1 コイルの間隔
Claims (18)
- (a)表面に第1アンダーパス・ワイヤ及び第2アンダーパス・ワイヤを有する半導体基板を準備するステップと、
(b)前記半導体基板上にSi 3 N 4 の第1誘電体層を形成し、該Si 3 N 4 の第1誘電体層上にSiO 2 の第2誘電体層を形成し、該SiO 2 の第2誘電体層上にSi 3 N 4 の第3誘電体層を形成するステップと、
(c)前記Si 3 N 4 の第3誘電体層上に第1フォトレジスト層を塗布してパターン化し該パターン化された第1フォトレジスト層を介して反応性イオン・エッチングすることにより、前記Si 3 N 4 の第3誘電体層のうち、前記第1アンダーパス・ワイヤ及び第2アンダーパス・ワイヤの上方の部分に開口を形成して前記SiO 2 の第2誘電体層の部分を露出するステップと、
(d)前記第1フォトレジスト層を除去し、第2フォトレジスト層を塗布してパターン化し該パターン化された第2フォトレジスト層を介して反応性イオン・エッチングすることにより、前記SiO 2 の第2誘電体層の前記露出された部分を貫通し、更に、前記露出された部分の下側にある前記Si 3 N 4 の第1誘電体層の部分を貫通して前記第1アンダーパス・ワイヤ及び第2アンダーパス・ワイヤをそれぞれ露出する第1トレンチ及び第2トレンチを形成すると共に、前記Si 3 N 4 の第3誘電体層を貫通して前記SiO 2 の第2誘電体層内の所定の深さまで到達し、且つ前記第1トレンチ及び前記第2トレンチの間でスパイラル状に延びるスパイラル・トレンチを形成するステップと、
(e)前記第2フォトレジスト層を除去し、前記Si 3 N 4 の第3誘電体層の上表面と、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの側壁及び底部とに導電性ライナを堆積するステップと、
(f)前記導電性ライナの表面にCuシード層を堆積するステップと、
(g)第3フォトレジスト層を塗布しパターン化し、該第3フォトレジスト層に前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの側壁及び底部の前記Cuシード層を露出する開口を形成し、該開口により前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの上側に上側トレンチを規定するステップと、
(h)電気メッキにより、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチと、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの前記上側トレンチとにCuを充填してインダクタを形成するステップと、
(i)前記第3フォトレジスト層を除去し、該第3フォトレジスト層の除去により露出された前記Cuシード層を除去して該Cuシード層の下にある導電性ライナを露出することにより、前記インダクタのうち前記Si 3 N 4 の第3誘電体層の上の前記露出された導電性ライナよりも上側にある部分を露出するステップと、
(j)前記インダクタのうち前記Si 3 N 4 の第3誘電体層の上の前記露出された導電性ライナよりも上側にある前記露出部分に導電性不動態化層を形成するステップと、
(k)前記露出された導電性ライナを除去することにより、該導電性ライナの下の前記Si 3 N 4 の第3誘電体層を露出するステップと、
(l)前記露出されたSi 3 N 4 の第3誘電体層上と、前記インダクタの前記導電性不動態化層上に有機不動態化層を形成するステップとを含むインダクタの製造方法。 - 前記導電性ライナが、TaNと該TaNに上に堆積されたTaとを有する、請求項1に記載のインダクタの製造方法。
- 前記導電性不動態化層は、Niの第1層と該第1層上に堆積されたAuの第2層とを有する、請求項1に記載のインダクタの製造方法。
- 前記有機不動態化層は、ポリイミドである、請求項1に記載のインダクタの製造方法。
- (a)表面に第1アンダーパス・ワイヤ、第2アンダーパス・ワイヤ及びI/Oターミナル・パッドを有する半導体基板を準備するステップと、
(b)前記半導体基板上にSi 3 N 4 の第1誘電体層を形成し、該Si 3 N 4 の第1誘電体層上にSiO 2 の第2誘電体層を形成し、該SiO 2 の第2誘電体層上にSi 3 N 4 の第3誘電体層を形成するステップと、
(c)前記Si 3 N 4 の第3誘電体層上に第1フォトレジスト層を塗布してパターン化し該パターン化された第1フォトレジスト層を介して反応性イオン・エッチングすることにより、前記Si 3 N 4 の第3誘電体層のうち、前記第1アンダーパス・ワイヤ、第2アンダーパス・ワイヤ及び前記I/Oターミナル・パッドの上方の部分に開口を形成して前記SiO 2 の第2誘電体層の部分を露出するステップと、
(d)前記第1フォトレジスト層を除去し、第2フォトレジスト層を塗布してパターン化し該パターン化された第2フォトレジスト層を介して反応性イオン・エッチングすることにより、前記SiO 2 の第2誘電体層の前記露出された部分を貫通し、更に、前記露出された部分の下側にある前記Si 3 N 4 の第1誘電体層の部分を貫通して前記第1アンダーパス・ワイヤ、前記第2アンダーパス・ワイヤ及び前記I/Oターミナル・パッドをそれぞれ露出する第1トレンチ、第2トレンチ及びビアを形成すると共に、前記Si 3 N 4 の第3誘電体層を貫通して前記SiO 2 の第2誘電体層内の所定の深さまで到達し、且つ前記第1トレンチ及び前記第2トレンチの間でスパイラル状に延びるスパイラル・トレンチを形成するステップと、
(e)前記第2フォトレジスト層を除去し、前記Si 3 N 4 の第3誘電体層の上表面と、前記第1トレンチ、前記第2トレンチ、前記スパイラル・トレンチ及び前記ビアのそれぞれの側壁及び底部とに導電性ライナを堆積するステップと、
(f)前記導電性ライナの表面にCuシード層を堆積するステップと、
(g)第3フォトレジスト層を塗布しパターン化し、該第3フォトレジスト層に前記第1トレンチ、前記第2トレンチ、前記スパイラル・トレンチ及び前記ビアのそれぞれの側壁及び底部の前記Cuシード層を露出する開口を形成し、該開口により前記第1トレンチ、前記第2トレンチ、前記スパイラル・トレンチ及び前記ビアのそれぞれの上側に上側トレンチを規定するステップと、
(h)電気メッキにより、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチと、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの前記上側トレンチとにCuを充填してインダクタを形成すると共に、前記ビア及び該ビアの前記上側トレンチに前記Cuを充填してパッドを形成するステップと、
(i)前記第3フォトレジスト層を除去し、該第3フォトレジスト層の除去により露出された前記Cuシード層を除去して該Cuシード層の下にある導電性ライナを露出することにより、前記インダクタ及び前記パッドのそれぞれのうち前記Si 3 N 4 の第3誘電体層の上の前記露出された導電性ライナよりも上側にある部分を露出するステップと、
(j)前記インダクタ及び前記パッドのそれぞれのうち前記Si 3 N 4 の第3誘電体層の上の前記露出された導電性ライナよりも上側にある前記露出部分に導電性不動態化層を形成するステップと、
(k)前記露出された導電性ライナを除去することにより、該導電性ライナの下の前記Si 3 N 4 の第3誘電体層を露出するステップと、
(l)前記露出されたSi 3 N 4 の第3誘電体層上と、前記インダクタ及び前記パッドのそれぞれの前記導電性不動態化層上に有機不動態化層を形成し、該有機不動態化層のうち前記パッドの上面にある部分を除去することにより前記パッドの上面の前記導電性不動態化層を露出するステップと、
(m)マスクの開口を前記パッドの上面の前記露出された導電性不動態化層の上に配置し、前記マスクの開口を通してパッド限定メタラージ層及びはんだボール用のPb又はPb/Sn合金を蒸着し、前記マスクを取り外すステップとを含むインダクタ及びはんだボールの製造方法。 - 前記導電性ライナが、TaNと該TaNに上に堆積されたTaとを有する、請求項5に記載のインダクタ及びはんだボールの製造方法。
- 前記導電性不動態化層は、Niの第1層と該第1層上に堆積されたAuの第2層とを有する、請求項5に記載のインダクタ及びはんだボールの製造方法。
- 前記有機不動態化層は、ポリイミドである、請求項5に記載のインダクタ及びはんだボールの製造方法。
- 前記パッド限定メタラージ層は、Cr、CrCu及びAuの3層構造である、請求項5に記載のインダクタ及びはんだボールの製造方法。
- (a)表面に第1アンダーパス・ワイヤ及び第2アンダーパス・ワイヤを有する半導体基板を準備するステップと、
(b)前記半導体基板上にSi 3 N 4 の第1誘電体層を形成し、該Si 3 N 4 の第1誘電体層上にSiO 2 の第2誘電体層を形成し、該SiO 2 の第2誘電体層上にSi 3 N 4 の第3誘電体層を形成するステップと、
(c)前記Si 3 N 4 の第3誘電体層上に、積層されたポジティブレジスト及びネガティブ・レジストからなる第1デュアル・トーン・レジスト層を塗布し、デュアル・トーンのフォトマスクを使用するフォトリソグラフィ・プロセスにより、前記第1デュアル・トーン・レジスト層に、該第1デュアル・トーン・レジスト層を貫通する開口と、該第1デュアル・トーン・レジスト層を部分的に除去した開口とのパターンを形成し、該パターン化された該第1デュアル・トーン・レジスト層を介して反応性イオン・エッチングすることにより、前記Si 3 N 4 の第3誘電体層、前記SiO 2 の第2誘電体層及び前記Si 3 N 4 の第1誘電体層を貫通して前記第1アンダーパス・ワイヤ及び前記第2アンダーパス・ワイヤをそれぞれ露出する第1トレンチ及び第2トレンチを形成すると共に、前記Si 3 N 4 の第3誘電体層を貫通して前記SiO 2 の第2誘電体層内の所定の深さまで到達し、且つ前記第1トレンチ及び前記第2トレンチの間でスパイラル状に延びるスパイラル・トレンチを形成するステップと、
(d)前記第1デュアル・トーン・レジスト層を除去し、前記Si 3 N 4 の第3誘電体層の上表面と、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの側壁及び底部とに導電性ライナを堆積するステップと、
(e)前記導電性ライナの表面にCuシード層を堆積するステップと、
(f)第2フォトレジスト層を塗布しパターン化し、該第2フォトレジスト層に前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの側壁及び底部の前記Cuシード層を露出する開口を形成し、該開口により前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの上側に上側トレンチを規定するステップと、
(g)電気メッキにより、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチと、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの前記上側トレンチとにCuを充填してインダクタを形成するステップと、
(h)前記第2フォトレジスト層を除去し、該第2フォトレジスト層の除去により露出された前記Cuシード層を除去して該Cuシード層の下にある導電性ライナを露出することにより、前記インダクタのうち前記Si 3 N 4 の第3誘電体層の上の前記露出された導電性ライナよりも上側にある部分を露出するステップと、
(i)前記インダクタの前記Si 3 N 4 の第3誘電体層の上の前記露出された導電性ライナよりも上側にある前記露出部分に導電性不動態化層を形成するステップと、
(j)前記露出された導電性ライナを除去することにより、該導電性ライナの下の前記Si 3 N 4 の第3誘電体層を露出するステップと、
(k)前記露出されたSi 3 N 4 の第3誘電体層上と、前記インダクタの前記導電性不動態化層上に有機不動態化層を形成するステップとを含むインダクタの製造方法。 - 前記導電性ライナが、TaNと該TaNに上に堆積されたTaとを有する、請求項10に記載のインダクタの製造方法。
- 前記導電性不動態化層は、Niの第1層と該第1層上に堆積されたAuの第2層とを有する、請求項10に記載のインダクタの製造方法。
- 前記有機不動態化層は、ポリイミドである、請求項10に記載のインダクタの製造方法。
- (a)表面に第1アンダーパス・ワイヤ、第2アンダーパス・ワイヤ及びI/Oターミナル・パッドを有する半導体基板を準備するステップと、
(b)前記半導体基板上にSi 3 N 4 の第1誘電体層を形成し、該Si 3 N 4 の第1誘電体層上にSiO 2 の第2誘電体層を形成し、該SiO 2 の第2誘電体層上にSi 3 N 4 の第3誘電体層を形成するステップと、
(c)前記Si 3 N 4 の第3誘電体層上に、積層されたポジティブレジスト及びネガティブ・レジストからなる第1デュアル・トーン・レジスト層を塗布し、デュアル・トーンのフォトマスクを使用するフォトリソグラフィ・プロセスにより、前記第1デュアル・トーン・レジスト層に、該第1デュアル・トーン・レジスト層を貫通する開口と、該第1デュアル・トーン・レジスト層を部分的に除去した開口とのパターンを形成し、該パターン化された該第1デュアル・トーン・レジスト層を介して反応性イオン・エッチングすることにより、前記Si 3 N 4 の第3誘電体層、前記SiO 2 の第2誘電体層及び前記Si 3 N 4 の第1誘電体層を貫通して前記第1アンダーパス・ワイヤ、前記第2アンダーパス・ワイヤ及び前記I/Oターミナル・パッドをそれぞれ露出する第1トレンチ、第2トレンチ及びビアを形成すると共に、前記Si 3 N 4 の第3誘電体層を貫通して前記SiO 2 の第2誘電体層内の所定の深さまで到達し、且つ前記第1トレンチ及び前記第2トレンチの間でスパイラル状に延びるスパイラル・トレンチを形成するステップと、
(d)前記第1デュアル・トーン・レジスト層を除去し、前記Si 3 N 4 の第3誘電体層の上表面と、前記第1トレンチ、前記第2トレンチ、前記スパイラル・トレンチ及び前記ビアのそれぞれの側壁及び底部とに導電性ライナを堆積するステップと、
(e)前記導電性ライナの表面にCuシード層を堆積するステップと、
(f)第2フォトレジスト層を塗布しパターン化し、該第2フォトレジスト層に前記第1トレンチ、前記第2トレンチ、前記スパイラル・トレンチ及び前記ビアのそれぞれの側壁及び底部の前記Cuシード層を露出する開口を形成し、該開口により前記第1トレンチ、前記第2トレンチ、前記スパイラル・トレンチ及び前記ビアのそれぞれの上側に上側トレンチを規定するステップと、
(g)電気メッキにより、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチと、前記第1トレンチ、前記第2トレンチ及び前記スパイラル・トレンチのそれぞれの前記上側トレンチとにCuを充填してインダクタを形成すると共に、前記ビア及び該ビアの前記上側トレンチに前記Cuを充填してパッドを形成するステップと、
(h)前記第2フォトレジスト層を除去し、該第2フォトレジスト層の除去により露出された前記Cuシード層を除去して該Cuシード層の下にある導電性ライナを露出することにより、前記インダクタ及び前記パッドのそれぞれのうち前記Si 3 N 4 の第3誘電体層の上の前記露出された導電性ライナよりも上側にある部分を露出するステップと、
(i)前記インダクタ及び前記パッドのそれぞれのうち前記Si 3 N 4 の第3誘電体層の上の前記露出された導電性ライナよりも上側にある前記露出部分に導電性不動態化層を形成するステップと、
(j)前記露出された導電性ライナを除去することにより、該導電性ライナの下の前記Si 3 N 4 の第3誘電体層を露出するステップと、
(k)前記露出されたSi 3 N 4 の第3誘電体層上と、前記インダクタ及び前記パッドのそれぞれの前記導電性不動態化層上に有機不動態化層を形成し、該有機不動態化層のうち前記パッドの上面にある部分を除去することにより前記パッドの上面の前記導電性不動態化層を露出するステップと、
(l)マスクの開口を前記パッドの上面の前記露出された導電性不動態化層の上に配置し、前記マスクの開口を通してパッド限定メタラージ層及びはんだボール用のPb又はPb/Sn合金を蒸着し、前記マスクを取り外すステップとを含むインダクタ及びはんだボールの製造方法。 - 前記導電性ライナが、TaNと該TaNに上に堆積されたTaとを有する、請求項14に記載のインダクタ及びはんだボールの製造方法。
- 前記導電性不動態化層は、Niの第1層と該第1層上に堆積されたAuの第2層とを有する、請求項14に記載のインダクタ及びはんだボールの製造方法。
- 前記有機不動態化層は、ポリイミドである、請求項14に記載のインダクタ及びはんだボールの製造方法。
- 前記パッド限定メタラージ層は、Cr、CrCu及びAuの3層構造である、請求項14に記載のインダクタ及びはんだボールの製造方法。
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-
2004
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2005
- 2005-01-03 TW TW099116268A patent/TWI351748B/zh active
- 2005-01-03 TW TW094100050A patent/TWI351747B/zh active
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Also Published As
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US20100047990A1 (en) | 2010-02-25 |
TW200537671A (en) | 2005-11-16 |
CN100341112C (zh) | 2007-10-03 |
JP2005217419A (ja) | 2005-08-11 |
US7068138B2 (en) | 2006-06-27 |
US20050167780A1 (en) | 2005-08-04 |
US7829427B2 (en) | 2010-11-09 |
CN1649087A (zh) | 2005-08-03 |
US7638406B2 (en) | 2009-12-29 |
TW201036127A (en) | 2010-10-01 |
TWI351747B (en) | 2011-11-01 |
TWI351748B (en) | 2011-11-01 |
US20060105534A1 (en) | 2006-05-18 |
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