TWI419284B - 晶片之凸塊結構及凸塊結構之製造方法 - Google Patents

晶片之凸塊結構及凸塊結構之製造方法 Download PDF

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TWI419284B
TWI419284B TW099116772A TW99116772A TWI419284B TW I419284 B TWI419284 B TW I419284B TW 099116772 A TW099116772 A TW 099116772A TW 99116772 A TW99116772 A TW 99116772A TW I419284 B TWI419284 B TW I419284B
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metal layer
layer
bump
solder
pad
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TW099116772A
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TW201143000A (en
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Cheng Tang Huang
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Chipmos Technologies Inc
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Description

晶片之凸塊結構及凸塊結構之製造方法
本發明係關於一種晶片之凸塊結構及晶片之凸塊結構之製造方法。
覆晶(Flip Chip)接合技術係以凸塊(bump)直接將晶片與基板連接。但近來由於晶片輸出入埠逐漸朝向細微化間距(Fine pitch)之設計，而晶片上每一個銲墊彼此間之距離相當的密集，然而，傳統之凸塊由於尺寸上之限制，並已不適用於細微化間距(Fine pitch)之晶片設計中，因而有銅柱(Copper pillar)之產生。
銅柱之形成乃藉由電鍍方法，將金屬沈積於厚光阻上之開孔而得。然，均勻之厚光阻不易形成，而使銅柱高低均勻度難以控制，從而造成晶片與電路板間電性連接問題。又，銅柱相當堅硬，當高低不等之銅柱進行接合時，高的銅柱可能會因承受過大的應力而產生龜裂或剝落之問題。此外，厚光阻上形成開孔，需高曝光能量，此讓微影製程條件不易控制，且於開孔顯影時，容易發生顯影不足，而嚴重影響到銅柱之形成。再者，在進行凸塊底金屬(Under Bump Metal；UBM)層蝕刻時，銅柱也會被蝕刻，而使銅柱尺寸控制不易。
再者，銅柱易氧化，而容易造成晶片與電路板間之電性連接問題。
有鑑於以銅柱作為凸塊結構之不足，因此有必要開發新的凸塊結構以取而代之。
本發明之一目的係揭示一種凸塊結構及其製造方法，該凸塊結構具不易氧化，且在承受應力時，具有緩衝效果，不會產生龜裂或剝落等之特性。
本發明之另一目的係揭示一種凸塊結構及其製造方法，其中凸塊結構之高度與橫向尺寸在製作上均較容易控制。
根據上述之目的，本發明第一實施例揭示一種晶片之凸塊結構。該晶片之凸塊結構係形成於一基板上，基板可包括至少一銲墊及一介電層，該介電層具至少一開口，其中該至少一開口暴露相應之該至少一銲墊。該凸塊結構包括至少一彈性凸塊、至少一第一金屬層、至少一第二金屬層及至少一銲球。該至少一彈性凸塊覆蓋相應之該至少一銲墊之部分。該至少一第一金屬層相應地覆蓋該至少一彈性凸塊及該至少一銲墊之未被該至少一彈性凸塊遮蓋之部分。該至少一第二金屬層相應地形成於位在該至少一彈性凸塊之頂部之該至少一第一金屬層上。該至少一銲球相應地形成於該至少一第二金屬層上。
本發明第二實施例揭示另一種晶片之凸塊結構。晶片之凸塊結構可設置於前述之基板上，且包含至少一彈性凸塊、至少一第一金屬層、至少一第二金屬層及至少一銲球。該至少一彈性凸塊位於該介電層上。該至少一第一金屬層覆蓋該至少一彈性凸塊與該至少一銲墊，且於該至少一彈性凸塊與該至少一銲墊之間延伸。該至少一第二金屬層形成於位在該至少一彈性凸塊之頂部之該至少一第一金屬層上。該至少一銲球形成於該至少一第二金屬層上。
本發明第一實施例揭示前述第一實施例之晶片之凸塊結構之製造方法，其包含下列步驟：提供一基板，其中該基板包括至少一銲墊及一介電層，該介電層具至少一開口，該至少一開口暴露相應之該至少一銲墊；於該至少一開口內，形成至少一彈性凸塊，其中該至少一彈性凸塊遮蓋部分之該至少一銲墊；沉積一第一金屬層；在該至少一彈性凸塊之頂部之該第一金屬層上，電鍍一第二金屬層；電鍍一銲料層於該第二金屬層上；形成一圖案化之光阻層，以遮蓋該銲料層及在該至少一彈性凸塊上、該至少一開口與鄰近該至少一開口周圍之該第一金屬層；蝕刻未被該圖案化之光阻層遮蓋之該第一金屬層；移除該圖案化之光阻層；以及進行迴銲，以使該銲料層形成一銲球。
本發明另一實施例揭示前述第二實施例之晶片之凸塊結構之製造方法，其包含下列步驟：提供一基板，其中該基板包括至少一銲墊及一介電層，該介電層具至少一開口，該至少一開口暴露該相應之至少一銲墊；於該介電層上，形成至少一彈性凸塊；沉積一第一金屬層；在該至少一彈性凸塊之頂部之該第一金屬層上，電鍍一第二金屬層；電鍍一銲料層於該第二金屬層上；形成一圖案化之光阻層，以遮蓋該銲料層及在該至少一彈性凸塊上、該至少一開口與鄰近該至少一開口周圍之該第一金屬層；蝕刻未被該圖案化之光阻層遮蓋之該第一金屬層；移除該圖案化之光阻層；以及進行迴銲，以使該銲料層形成一銲球。
上文已經概略地敍述本揭露之技術特徵及優點，俾使下文之本揭露詳細描述得以獲得較佳瞭解。構成本揭露之申請專利範圍標的之其它技術特徵及優點將描述於下文。本揭露所屬技術領域中具有通常知識者應可瞭解，下文揭示之概念與特定實施例可作為基礎而相當輕易地予以修改或設計其它結構或製程而實現與本揭露相同之目的。本揭露所屬技術領域中具有通常知識者亦應可瞭解，這類等效的建構並無法脫離後附之申請專利範圍所提出之本揭露的精神和範圍。
圖1例示本發明一實施例之晶片之凸塊結構1。參照圖1所示，凸塊結構1係形成於一基板11上，基板11可包括至少一銲墊12及一介電層13，介電層13具有至少一開口14，該至少一開口14係與該至少一銲墊12相應設置，其中該至少一開口14暴露該至少一銲墊12。凸塊結構1可包括至少一彈性凸塊15、至少一第一金屬層16、至少一第二金屬層17以及至少一銲球(solder ball)18。至少一彈性凸塊15與至少一銲墊12係相應設置，且覆蓋相應之至少一銲墊12之部分，該彈性凸塊15之高度，較佳的，可介於20~60μm之間。
至少一第一金屬層16覆蓋相應之彈性凸塊15及相應之該至少一銲墊12中未被該至少一彈性凸塊15遮蓋之部分。至少一第二金屬層17形成於位在相應之彈性凸塊15之頂部上之第一金屬層16上。至少一銲球18形成於相應之第二金屬層17上。
特而言之，在本實施例中，彈性凸塊15形成於相應之銲墊12之中間部位，而使彈性凸塊15底緣為暴露之銲墊12所圍繞。彈性凸塊15與相應之銲墊12之大小可隨第一金屬層16與暴露銲墊12間之接觸面積之需求大小而調整。
第一金屬層16可覆蓋整個相應之彈性凸塊15。第一金屬層16另覆蓋相應之該至少一銲墊12中未被該至少一彈性凸塊15遮蓋之部分，藉此使第一金屬層16與至少一銲墊12電性連接，其較佳的電鍍之厚度介於0.2μm-0.6μm之間。
第二金屬層17形成於位在相應之彈性凸塊15之頂部上之第一金屬層16上，藉此第二金屬層17得與相應之銲墊12電性連接，其較佳的電鍍之厚度介於3μm-10μm之間。至少一銲球18形成於相應之第二金屬層17上，其較佳的高度介於10μm~40μm之間，以使相應之銲墊12可藉由銲球18電性連接外部裝置或電路板。
相較於傳統之銅柱凸塊，彈性凸塊具有彈性，故可緩衝應力，不易因承受較高之應力而損壞，且該銲球18位於彈性凸塊15之頂部、銲墊12之中央位置，如此一來，於後續運用於與外部電路板或晶片接合時，由於銲球18僅位於彈性凸塊15之頂端，故不易因銲料過多而造成溢流的問題，因此，適用於目前細微化間距(Fine pitch)之晶片設計。
圖2例示本發明另一實施例之晶片之凸塊結構2。參照圖2所示，凸塊結構2係形成於一基板11上，基板11可包括至少一銲墊12及一介電層13，介電層13具有至少一開口14，該至少一開口14係與該至少一銲墊12相應設置，其中該至少一開口14暴露該至少一銲墊12。凸塊結構2可包括至少一彈性凸塊15、至少一第一金屬層16、至少一第二金屬層17以及至少一銲球18。至少一彈性凸塊15與至少一銲墊12係相應設置，且形成於介電層13上；至少一第一金屬層16係相應於彈性凸塊15設置，並覆蓋相應之彈性凸塊15及相應之該至少一銲墊12，且於相應之彈性凸塊15及相應之該至少一銲墊12之間延伸；至少一第二金屬層17形成於位在相應之彈性凸塊15之頂部上之第一金屬層16上；至少一銲球18形成於相應之第二金屬層17上。藉由前述之配置，使銲球18與相應之銲墊12電性連接，而晶片得以透過銲墊12與外部裝置或電路板電性連接。由於該彈性凸塊15係設置於介電層13上，而非直接設置於銲墊12上，故與外部電路板或晶片接合時，不僅可透過彈性凸塊15進行接合時之緩衝，亦可透過該介電層13予以提供第二道之緩衝保護效果，避免接合力直接衝擊該銲墊12，造成銲墊12損毀。
在本案諸實施例中，彈性凸塊15之形狀可自其底部往上呈漸縮之柱體，例如：角錐或圓錐體等。彈性凸塊15之頂部可為平頂。彈性凸塊15之材料可包含高分子材料，例如：聚亞醯胺、環氧樹脂(Epoxy)或其他類似具絕緣性質者。
在本案諸實施例中，第一金屬層16之材料可選自於金、鈦鎢金、鈦銅或前述金屬之合金之任一者所組成之群組，其厚度較佳的介於0.2μm-0.6μm。
在本案諸實施例中，第二金屬層17主要係作為第一金屬層16與銲球18間之介面層。第二金屬層17包含可使銲球18易於沾附且可阻止擴散之材料，例如：鎳，其電鍍厚度約為3-10μm；但本發明不以此為限。銲球18之材料則可包含錫、錫鉛或錫銀等，局部設置於第二金屬層17之頂端。
在本案諸實施例中，基板11之材料可包含矽、玻璃或塑膠。介電層13之材料可包含氧化物，如氧化矽；或者氮化物，如氮化矽等。
圖3至圖8係製程流程示意圖，其例示圖1實施例之凸塊結構1之製造方法。如圖3所示，一種凸塊結構1之製造方法首先提供一基板11。基板11可包含至少一銲墊12及一介電層13。介電層13可包含至少一開口14，該至少一開口14可相應於該至少一銲墊12設置，其中該至少一開口14暴露該至少一銲墊12。
如圖4所示，其次，塗佈一層光阻於該基板11上，並利用微影製程於各開口14內，分別形成一彈性凸塊15，其中各彈性凸塊15遮蓋相應之銲墊12之部分。在本實施例中，彈性凸塊15形成於相應之銲墊12之中間部位，使彈性凸塊15底緣為暴露之銲墊12所圍繞。
如圖5所示，沈積一第一金屬層16，以覆蓋基板11及彈性凸塊15，並與該銲墊12上未被該彈性凸塊15遮蓋之部分接觸。
如圖6所示，於第一金屬層16上形成一圖案化之光阻層21。光阻層21包含複數個開口22，開口22相應於彈性凸塊15而形成，其中各開口22暴露相應之彈性凸塊15之頂部。然後，電鍍一第二金屬層17。第二金屬層17形成於各開口22內之第一金屬層16上。接著，電鍍一銲料層23於第二金屬層17。最後，移除光阻層21。
參照圖7所示，形成一圖案化之光阻層24，其中圖案化之光阻層24遮蓋銲料層23及在彈性凸塊15、開口14與鄰近開口14等上之第一金屬層16。之後，蝕刻未被圖案化之光阻層24所遮蓋之第一金屬層16，藉此電性隔離銲料層23。蝕刻完後，移除圖案化之光阻層24。
參照圖8所示，進行迴銲製程，以使銲料層23形成銲球18。
圖9至圖13係製程流程示意圖，其例示圖2實施例之凸塊結構2之製造方法。如圖9所示，一種凸塊結構2之製造方法首先提供一基板11。基板11可包含至少一銲墊12及一介電層13。介電層13可包含至少一開口14，該至少一開口14可相應於該至少一銲墊12設置，其中該至少一開口14暴露該至少一銲墊12。
再參照圖9，塗佈一層光阻於該基板11上，並利用微影製程於各開口14旁之介電層13上，相應地形成一彈性凸塊15。
如圖10所示，沈積一第一金屬層16，以覆蓋彈性凸塊15與基板11上之開口14中之銲墊12及介電層13。
如圖11所示，於第一金屬層16上形成一圖案化之光阻層21。光阻層21包含複數個開口22，開口22相應於彈性凸塊15而形成，其中各開口22暴露相應之彈性凸塊15之頂部。然後，電鍍一第二金屬層17。第二金屬層17形成於各開口22內之第一金屬層16上。接著，電鍍一銲料層23於第二金屬層17上，而位於彈性凸塊15之頂部。最後，移除光阻層21。
參照圖12所示，形成一圖案化之光阻層25，其中圖案化之光阻層25遮蓋銲料層23、在彈性凸塊15上之第一金屬層16、在銲墊12上之第一金屬層16及相應之銲墊12與彈性凸塊15間之第一金屬層16。之後，蝕刻未被圖案化之光阻層25所遮蓋之第一金屬層16，藉此使銲料層23與相應之銲墊12電性連接而使銲料層23彼此間電性隔離。蝕刻完後，移除圖案化之光阻層25。
參照圖13所示，進行迴銲製程，以使銲料層23形成銲球18。
相較於銅柱凸塊之製程，本發明揭示之製程無深開孔之形成步驟，故微影製程條件容易控制，且不發生顯影不足之問題。
綜上，相較於銅柱凸塊，本發明揭示之彈性凸塊不易氧化，且在承受應力時，不會產生龜裂或剝落之問題。而且，彈性凸塊之高度與橫向尺寸，在製作上均較容易控制。彈性凸塊可形成於相應之銲墊之中間部位，使彈性凸塊可更為密集地配置。此外，彈性凸塊可形成於相應之銲墊旁。彈性凸塊上可披覆一第一金屬層，該第一金屬層並延伸至暴露之銲墊上。銲球可形成於彈性凸塊之頂部，而一作為介面之第二金屬層則可形成於銲球與第一金屬層之間。
本揭露之技術內容及技術特點已揭示如上，然而熟悉本項技術之人士仍可能基於本揭露之教示及揭示而作種種不背離本揭露精神之替換及修飾。因此，本揭露之保護範圍應不限於實施例所揭示者，而應包括各種不背離本揭露之替換及修飾，並為以下之申請專利範圍所涵蓋。
1、2．．．凸塊結構
11．．．基板
12．．．銲墊
13．．．介電層
14．．．開口
15．．．彈性凸塊
16．．．第一金屬層
17．．．第二金屬層
18．．．銲球
21．．．光阻層
22．．．開口
23．．．銲料層
24、25．．．光阻層
圖1例示本發明一實施例之晶片之凸塊結構；
圖2例示本發明另一實施例之晶片之凸塊結構；
圖3至圖8係製程流程示意圖，其例示圖1實施例之凸塊結構之製造方法；及
圖9至圖13係製程流程示意圖，其例示圖2實施例之凸塊結構之製造方法。
1．．．凸塊結構
11．．．基板
12．．．銲墊
13．．．介電層
14．．．開口
15．．．彈性凸塊
16．．．第一金屬層
17．．．第二金屬層
18．．．銲球

Claims (12)

  1. 一種晶片之凸塊結構，其係形成於一基板上，該基板包括至少一銲墊及一介電層，該介電層具至少一開口，其中該至少一開口暴露相應之該至少一銲墊，該凸塊結構包含：至少一彈性凸塊，相應地覆蓋部分之該至少一銲墊之中間部位；至少一第一金屬層，相應地覆蓋該至少一彈性凸塊與該至少一銲墊之未被該至少一彈性凸塊遮蓋之部分；至少一第二金屬層，相應地形成於位在該至少一彈性凸塊之頂部之該至少一第一金屬層上；以及至少一銲球，相應地形成於該至少一第二金屬層上，而位於該至少一彈性凸塊之頂端。
  2. 根據請求項1所述之晶片之凸塊結構，其中該至少一彈性凸塊之材料包含聚亞醯胺或環氧樹脂。
  3. 根據請求項1所述之晶片之凸塊結構，其中該至少一第一金屬層之材料係選自於金、鈦鎢金、鈦銅或其合金之一所組成之群組。
  4. 根據請求項1所述之晶片之凸塊結構，其中該至少一第二金屬層之材料包含鎳。
  5. 一種具晶片之凸塊結構，其係形成於一基板上，該基板包括至少一銲墊及一介電層，該介電層具至少一開口，其中該至少一開口暴露相應之該至少一銲墊，該凸塊結構包含：至少一彈性凸塊，位於該介電層上；至少一第一金屬層，覆蓋該至少一彈性凸塊與該至少一銲墊，且於該至少一彈性凸塊與該至少一銲墊之間延伸；至少一第二金屬層，形成於位在該至少一彈性凸塊之頂部之該至少一第一金屬層上；以及至少一銲球，形成於該至少一第二金屬層上，而位於該至少一彈性凸塊之頂端部。
  6. 一種晶片之凸塊結構之製造方法，包含下列步驟：提供一基板，其中該基板包括至少一銲墊及一介電層，該介電層具至少一開口，該至少一開口暴露相應之該至少一銲墊；於該至少一開口內，形成至少一彈性凸塊，其中該至少一彈性凸塊遮蓋部分之該至少一銲墊之中間部位；沉積一第一金屬層；在該至少一彈性凸塊之頂部之該第一金屬層上，電鍍一第二金屬層；電鍍一銲料層於該第二金屬層上；形成一圖案化之光阻層，以遮蓋該銲料層及在該至少一彈性凸塊上、該至少一開口與鄰近該至少一開口周圍之該第一金屬層；蝕刻未被該圖案化之光阻層遮蓋之該第一金屬層；移除該圖案化之光阻層；以及進行迴銲，以使該銲料層形成一銲球。
  7. 根據請求項6所述之製造方法，其中電鍍一第二金屬層之步驟更包含下列步驟：塗佈一光阻層於該第一金屬層上；以及圖案化該光阻層，以移除該至少一彈性凸塊之頂部上之光阻。
  8. 根據請求項6所述之製造方法，其中該至少一彈性凸塊之材料係聚亞醯胺或環氧樹脂。
  9. 根據請求項6所述之製造方法，其中該第一金屬層之材料係選自於金、鈦鎢金、鈦銅或其合金之一所組成之群組。
  10. 根據請求項6所述之製造方法，其中該第二金屬層之材料為鎳。
  11. 一種晶片之凸塊結構之製造方法，包含下列步驟：提供一基板，其中該基板包括至少一銲墊及一介電層，該介電層具至少一開口，該至少一開口暴露相應之該至少一銲墊；於該介電層上，形成至少一彈性凸塊；沉積一第一金屬層；在該至少一彈性凸塊之頂部之該第一金屬層上，電鍍一第二金屬層；電鍍一銲料層於該第二金屬層上；形成一圖案化之光阻層，以遮蓋該銲料層及在該至少一彈性凸塊上、該至少一銲墊上和於該至少一彈性凸塊與該至少一銲墊之間延伸之該第一金屬層；蝕刻未被該圖案化之光阻層遮蓋之該第一金屬層；移除該圖案化之光阻層；以及進行迴銲，以使該銲料層形成一銲球。
  12. 根據請求項11所述之製造方法，其中電鍍一第二金屬層之步驟更包含下列步驟：塗佈一光阻層於該第一金屬層上；以及圖案化該光阻層，以移除該至少一彈性凸塊之頂部上之光阻。
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