JP4017173B2 - ボンディング・パッドと高性能銅インダクタの集積化 - Google Patents
ボンディング・パッドと高性能銅インダクタの集積化 Download PDFInfo
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Description
最小限の追加処理で高性能Cuインダクタを使用することができるようになること、
最終金属層の後に形成されたCuインダクタの上にパシベーションを形成することがあり、
インダクタに使用されるCuは、また、最終金属層より1つ上層の配線層(last metal + 1 wiring layer)として使用することができ、または隆起(raised)ボンディング・パッドおよび相互接続配線に使用することができ、
プロセスは、隆起Alボンディング・パッドまたは陥凹(recessed)Cuボンディング・パッドに適合できる。
11 ビア
12 Al(アルミニウム)ボンディング・パッド
13 ビア
14 外側のCu線端子
15 最終Cu金属層(Cu線)
16 内側のCu線端子
17 Cu層
18 トレンチ
19 Cuビア
20 ライナ(liner)
22、40、54、70 レジスト
24、44、60 ポリイミド
42、56 Cuインダクタ
46、62 ビア開口
50 隆起Cu(銅)ボンディング・パッド
52、58 相互接続配線
Claims (10)
- アルミニウム・ボンディング・パッドを有する銅(Cu)積層インダクタを製造する方法であって、
a)Cu積層インダクタの最終金属Cu層を最終金属層に形成するステップであって、誘電体中に最終金属層ダマシンCu相互接続を形成するステップと、
b)前記最終金属層ダマシンCu相互接続の上に1つまたは複数の層のパシベーション材料を堆積するステップと、
c)前記1つまたは複数の層のパシベーション材料内にバー・ビアおよび端子ビアをパターン形成するステップであって、前記バー・ビアおよび端子ビアは前記Cu積層インダクタの前記最終金属Cu層を覆って形成されるステップと、
d)前記最終金属Cu層の上にボンディング・パッド構造を形成するステップであって、ボンディング・パッドおよびバリア層のための金属を堆積し、前記金属をボンディング・パッドおよびバリア層にパターン形成し、そしてCuシード層を堆積するステップと、
e)Cu積層インダクタのためのレジストを堆積しパターン形成し、そしてインダクタ領域内にCuを選択的に形成するようにCuを堆積するステップであって、前記Cu積層インダクタの最終金属層より1つ上層のCu層を、前記バー・ビアおよび前記最終金属Cu層を覆って最終金属層より1つ上層に形成しかつ重ねるステップと、
f)前記レジストを剥離し、前記Cuシード層をエッチングし、そしてCu積層インダクタ上にパシベーション層を選択的に堆積するステップとを備えることを特徴とする
アルミニウム・ボンディング・パッドを有する銅(Cu)積層インダクタを製造する方法。 - さらに、
g)ステップfの後で、ステップfの構造にポリイミドを塗布し、そしてボンディング・パッドへの開口を形成するステップと、
h)バリア層金属を堆積し、そして半田ボールを形成するステップとを含む、請求項1に記載の方法。 - 前記Cu積層インダクタの前記最終金属層より1つ上層のCu層を覆ってパシベーション層を形成するステップをさらに備える、請求項1または2に記載の方法。
- 前記Cu積層インダクタの前記最終金属層より1つ上層のCu層を覆ってCoWPのパシベーション層を形成するステップをさらに備える、請求項1〜3いずれか1つに記載の方法。
- さらに、パシベーション金属を選択的に堆積するステップを含む、請求項1〜4いずれか1つに記載の方法。
- さらに、パシベーション誘電体を選択的に堆積するステップを含む、請求項1〜4いずれか1つに記載の方法。
- さらに、パシベーション金属およびパシベーション誘電体を選択的に堆積するステップを含む、請求項1〜4いずれか1つに記載の方法。
- さらに、パシベーション金属またはパシベーション誘電体を選択的に堆積し、スペーサを形成するようにエッチバックし、誘電体層を堆積するステップを含む、請求項1〜4いずれか1つに記載の方法。
- さらに、パシベーション金属またはパシベーション誘電体を選択的に堆積し、スペーサを形成するようにエッチバックし、Cu上に選択的な金属を堆積するステップを含む、請求項1〜4いずれか1つに記載の方法。
- さらに、パシベーション金属またはパシベーション誘電体を選択的に堆積し、Cu上に選択的な金属を堆積し、スペーサを形成するようにエッチバックし、誘電体層を堆積するステップを含む、請求項1〜4いずれか1つに記載の方法。
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US10/707,896 US7207096B2 (en) | 2004-01-22 | 2004-01-22 | Method of manufacturing high performance copper inductors with bond pads |
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JP2005210121A JP2005210121A (ja) | 2005-08-04 |
JP4017173B2 true JP4017173B2 (ja) | 2007-12-05 |
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JP (1) | JP4017173B2 (ja) |
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-
2004
- 2004-01-22 US US10/707,896 patent/US7207096B2/en active Active
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2005
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CN1670945A (zh) | 2005-09-21 |
US20050160575A1 (en) | 2005-07-28 |
US7207096B2 (en) | 2007-04-24 |
CN100370598C (zh) | 2008-02-20 |
TWI325140B (en) | 2010-05-21 |
TW200537533A (en) | 2005-11-16 |
JP2005210121A (ja) | 2005-08-04 |
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