US20090166843A1 - Semiconductor device and method for manufacturing a semiconductor device - Google Patents

Semiconductor device and method for manufacturing a semiconductor device Download PDF

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Publication number
US20090166843A1
US20090166843A1 US11965081 US96508107A US2009166843A1 US 20090166843 A1 US20090166843 A1 US 20090166843A1 US 11965081 US11965081 US 11965081 US 96508107 A US96508107 A US 96508107A US 2009166843 A1 US2009166843 A1 US 2009166843A1
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Prior art keywords
conducting
semiconductor
element
layer
elements
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US11965081
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Christoph Kutter
Ewald Soutschek
Georg Meyer-Berg
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Intel Deutschland GmbH
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Infineon Technologies AG
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    • H01L24/10Bump connectors ; Manufacturing methods related thereto
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Abstract

A semiconductor device includes a semiconductor chip including a first conducting element, and a second conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a first location. It further includes a third conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a second location, and a fourth conducting element arranged outside the semiconductor chip. A vertical projection of the fourth conducting element on the chip crosses the first conducting element between the first location and the second location.

Description

  • [0001]
    This invention refers to embodiments of semiconductor devices and methods for their production, particularly the electrical connection between a semiconductor chip and its supporting structure.
  • BACKGROUND
  • [0002]
    In the production of semiconductor devices, small contact elements on the semiconductor chip have to be connected to electrical terminals which provide a contact to the outside world. These connections are generally realized as part of the package or encapsulation of the semiconductor chip, e.g. by providing a metallization layer on a face of the chip which provides conducting elements or lines connecting the contact elements of the chip to contact elements on an outer face of the package, e.g. solder balls. Especially with high pin counts, the problem frequently occurs that the high number of conducting lines in the layer cannot be arranged without crossings between at least some of the lines. In a single metallization layer, a crossing of two lines can not be realized because this would cause an electrical shortcut between the lines. Hence, in this case a second metallization layer has to be provided in order to arrange the connections between the chip and the contact elements to the outside.
  • BRIEF SUMMARY OF THE INVENTION
  • [0003]
    According to an embodiment, a semiconductor device is provided. It includes a semiconductor chip which includes a first conducting element. A second conducting element outside the semiconductor chip is electrically connected to the first conducting element arranged at a first location. A third conducting element outside the semiconductor chip is electrically connected to the first conducting element at a second location. A fourth conducting element is also provided arranged outside the semiconductor chip. In a vertical projection of the fourth conducting element on the chip, the projection crosses the first conducting element between the first location and the second location.
  • [0004]
    According to a further embodiment, a semiconductor device is provided. It includes a semiconductor chip including at least two contact elements and a first conducting element located in the chip, and a layer of conducting elements arranged adjacent the chip, which include a contact region providing an interface to the outside of the semiconductor device. It further includes second and third conducting elements connected to the first conducting element located in the chip via contact elements, so that the second and third conducting elements are electrically connected via the first conducting element, and wherein the second conducting element is connected to the contact region. According to a further embodiment, there is provided a method of manufacturing semiconductor devices, which includes providing at least two semiconductor chips that each comprise a first conduction line, covering the at least two semiconductor chips with mold material, applying a metallization layer over the at least two semiconductor chips and the mold material such that the metallization layer contacts each of the first conduction lines at at least two separated locations, and separating the at least two semiconductor chips from each other after the application of the metallization layer.
  • [0005]
    According to a further embodiment, there is provided a method of manufacturing semiconductor devices, which includes providing a semiconductor chip having a first conducting element, which is connected to two contact elements on a face of the chip, and providing a layer of conducting elements on a face of the chip, wherein a second conducting element and a third conducting element of the layer of conducting elements are connected to the first conducting element located in the chip via contact elements, so that the second and third conducting elements are electrically connected via the first conducting element, and a vertical projection of a fourth conducting element of the layer of conducting elements crosses the first conducting element.
  • BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
  • [0006]
    A full and enabling disclosure of the present invention, including the best mode thereof, to one of ordinary skill in the art, is set forth more particularly in the remainder of the specification, including reference to the accompanying figures. Therein:
  • [0007]
    FIGS. 1 a-1 b shows a semiconductor device.
  • [0008]
    FIG. 2 a shows a schematic cross-sectional view of the semiconductor device.
  • [0009]
    FIG. 2 b shows a schematic perspective view of the semiconductor device.
  • [0010]
    FIG. 3 a shows a cross-sectional view of a semiconductor device according to an embodiment of the invention.
  • [0011]
    FIG. 3 b shows a schematic view of a semiconductor device according to an embodiment of the invention.
  • [0012]
    FIG. 4 a-4 b show a further semiconductor device.
  • [0013]
    FIG. 5 a-5 b show a detailed view of a semiconductor device according to an embodiment of the invention.
  • [0014]
    FIG. 6 a-6 b show a semiconductor wafer and a reconstituted wafer according to an embodiment of the invention.
  • [0015]
    FIG. 7 a-7 i show process steps according to an embodiment of the invention.
  • [0016]
    FIG. 8 shows an embodiment of a semiconductor device according to an embodiment of the invention.
  • [0017]
    FIG. 9 shows a further embodiment of a semiconductor device according to an embodiment of the invention.
  • [0018]
    FIG. 10 a-10 b shows a further embodiment of a semiconductor device according to an embodiment of the invention.
  • DETAILED DESCRIPTION
  • [0019]
    Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the figures. Each example is provided by way of explanation, and is not meant as a limitation of the invention. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the present invention includes such modifications and variations. The examples are described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not scaled and are for illustrative purposes only.
  • [0020]
    The term “connected” is used in this context for a direct connection of two elements, which includes that the elements are electrically connected. The term “electrically connected” means that two elements are in electrical contact, but can be connected over an intermediate element, hence they need not be directly connected. The terms “conducting element” and “conducting line” are used interchangeably in this description.
  • [0021]
    A concept underlying the design of the embodiments below is the functional separation between the layout of the semiconductor chip and the layout of the package, printed circuit board or substrate. This is achieved by using a conducting element in the semiconductor chip to enable crossings of conducting lines in redistribution layers, printed circuit boards or substrates without the need of implementing further layers. In the following, this concept is described for a number of embodiments.
  • [0022]
    FIGS. 1 a and 1 b show an example of a typical semiconductor device 5 employing a fan-in wafer level ball grid array, also known as wafer level package or WLP. The semiconductor chip 10 includes a number of contact elements 20 on a face. A first dielectric layer 30, which typically includes silicone, is applied to the face of the chip. A metallization layer including copper or aluminium is provided on the first dielectric layer. The metallization layer is structured by etching during the manufacturing process in order to provide a number of conducting elements 50 (also referred to as conducting lines in the following). In a typical manufacturing process, the metal is sputtered on the silicone layer 30, covered with a resist layer, and exposed to radiation employing an exposure mask. After a development process, the produced structure is plated and stripped. A typical thickness of the produced structure of metallic conducting elements is in the range from 3 to 20 μm, more preferred from 4 to 8 μm. A typical width of the resulting conducting lines is 20 μm. Through contact holes 25 in the first dielectric layer 30, the conducting lines are in contact with the contact elements 20 or contact pads on the chip. A second dielectric layer 60 on the metallization layer typically includes polyimide. Via holes 65, the conducting lines 50 are in electrical contact with solder balls 70 which are placed on holes of the second dielectric layer 60. FIG. 1 b shows a bottom view on the described semiconductor device. In FIG. 2 a, a more detailed sectional view of the structure of FIG. 1 a is shown. FIG. 2 b shows a schematic view of the semiconductor device, wherein only one conduction line 50 and solder ball 70 are shown out of the plurality of conducting elements which form the layer of conducting elements.
  • [0023]
    FIG. 3 a shows a further embodiment. Based on the semiconductor device 5 as shown in FIGS. 1 a, 1 b, 2 a and 2 b, a conducting line or conducting element 100 provided in the chip 10 serves as a functional part of the layer of conducting elements, of which three elements 110, 120, 130 are exemplarily depicted in FIG. 3 a. Conducting elements 110 and 130 are electrically connected via the conducting element 100 in the chip. The electrical current flowing from element 110 to element 130 or vice versa makes a detour around conducting element 120, which extends in a direction with an arbitrary angle to elements 110 and 130. Hence, it becomes possible to provide a crossing between the conducting path constituted by elements 110/130 and element 120 by maintaining a single layer of conducting elements. An essential feature for enabling this is the conducting element 100 in the chip, which forms a part of the electrical path as described above. A vertical projection of the conducting element 120 onto the chip would cross the first conducting element 100 (located on the chip) between the first contact element 110 and the second contact element 130. In a further embodiment, an insulating layer 30, typically of silicone, is provided between the chip with conducting element 100 and conducting elements 110, 120, 130. Typically, elements 110, 120, 130 are formed from a common conductive layer or metallization layer provided on the insulation layer 30. FIG. 3 b shows a schematic bottom view of the device shown in FIG. 3 a, wherein four crossings of conducting elements are depicted, of which each crossing shows the characteristics described above and depicted in FIG. 3 a.
  • [0024]
    Conducting element 100 is typically a conducting structure in one of the top layers of the semiconductor chip 10. It is typically not part of the circuitry of the chip, but designed only for the described purpose. It has two contact elements or contact pads 20, typically at its ends, where it is connected to conducting elements 110, 130.
  • [0025]
    During the design phase of the semiconductor device, the routing of the conducting elements in the layer of conducting elements is arranged. If it occurs that a crossing between two conducting elements in the metallization layer is necessary, the design according to the above described embodiments is employed. That is, in the mask for the production of the layer of conducting elements, one of the elements is separated at the location where the crossing with another conducting element would be necessary. Simultaneously, conducting element 100 is added to the layout of the semiconductor chip, designated to connect the separated conducting elements in the semiconductor device.
  • [0026]
    In a further embodiment, shown in FIGS. 5 a and 5 b, the above described technique of using a conduction line 100 in the chip as a functional element of the layer of conducting elements is applied to a chip 10 which is additionally encapsulated in a body 150 including a mold mass 240. This kind of assembly is also known as an embedded wafer level ball grid array (eWLB) and is shown in FIGS. 4 a and 4 b. The mold mass is typically a polymer, e.g. a polyimide or an epoxy resin, which includes a high amount of SiO2 which may exceed 90 weight-percent. The mass covers a face 160 of the chip opposite the conducting layer, as well as the side faces 170. Typically, the conducting layer extends over the semiconductor chip and the encapsulating body 150. One effect of this structure is that the space available for the conducting layer greatly exceeds, which is particularly useful for the packaging of highly integrated semiconductor chips which require a high number of external connections and thus a package with a high pin count. For a given pitch of the printed circuit board to which the semiconductor device shall be applied, only a limited number of connections can be arranged under the footprint of the chip. Hence, by adding the mold mass 240 and extending the layer of conducting elements 50 and of solder balls 70 to the area of the encapsulating body 150, this area is greatly increased in comparison to the assembly without the encapsulating body, which is apparent from FIGS. 4 a and 4 b.
  • [0027]
    In the following, the manufacturing method for the aforementioned embedded wafer level ball grid array is described. The procedure is based on the dicing of a readily fabricated and tested wafer 200 into discrete semiconductor chips 10, the relocation of the semiconductor chips in a larger spacing then they have been in the wafer bond, and the addition of a molding compound or mold mass to be a placeholder between the chips. FIG. 6 a schematically shows a semiconductor wafer 200 before undergoing this process, and FIG. 6 b the resulting reconstituted or reconfigurated wafer 210. In order to produce the latter, the following steps are carried out, which are depicted in FIGS. 7 a to 7 f:
  • [0028]
    7 a: dicing the fabricated and tested semiconductor wafer 200 shown in FIG. 6 a in order to achieve single semiconductor chips 10.
  • [0029]
    7 b: Laminating a double sided adhesive tape 230 onto a metal carrier plate 220 in order to support the assembly during molding, wherein the tape 230 typically features thermo-release properties which allow the removal of the tape after molding.
  • [0030]
    7 c: placing the diced chips 10 onto the mounted tape 230 with the active area facing down.
  • [0031]
    7 d: encapsulating the mounted chips 10 by molding by using a molding compound 240.
  • [0032]
    7 e: releasing the molded, reconfigured wafer 210 from the carrier plate 220.
  • [0033]
    7 f: pealing off the adhesive tape from the molded wafer 210.
  • [0034]
    Typically, a liquid mold compound is used as it can be dispended and no melting time is needed. The reconfigured wafer 210 typically has a thickness similar to a normal wafer, i.e. about 300 μm. Hence, further processing steps such as the application of the metallization layer for the production of the layer of conducting elements may be carried out using equipment designed for wafer processing. Further processing steps in order to arrive at an embodiment of the present invention are described in the following with respect to FIGS. 7 g to 7 i.
  • [0035]
    FIG. 7 g shows how a first dielectric layer 30, which typically includes silicone, is applied to the face of the reconstituted wafer 210, wherein only a small segment of the wafer 210 is depicted. After contact holes 25 have been formed in the first dielectric layer 30, a metallization layer including copper or aluminium is provided on the first dielectric layer. FIG. 7 h shows the metallization layer which is structured by etching during the manufacturing process in order to provide a number of conducting elements 110, 120, 130 (also referred to as conducting lines in the following). In a typical manufacturing process, the metal is sputtered on the silicone layer 30, covered with a resist layer, and exposed to radiation employing an exposure mask. After a development process, the produced structure is plated and stripped. A typical thickness of the produced structure of metallic conducting elements is in the range from 3 to 20 μm, more preferred from 4 to 8 μm. A typical width of the resulting conducting lines is 20 μm. Through contact holes 25 in the first dielectric layer 30, the conducting lines are in contact with the contact elements 20 or contact pads on the chips. A second dielectric layer 60 provided on the metallization layer typically includes polyimide. Via holes 65, the conducting lines 50 are in electrical contact with solder balls 70 which are placed on holes of the second dielectric layer 60.
  • [0036]
    In an embodiment of the invention shown in FIG. 8, the chip 10 is mounted on a substrate 300 with solder balls 70 as a connection between chip and substrate, respectively solderballs 310 between substrate and a printed circuit board (not shown). The electrical path from conduction element 350 to conduction element 360 is routed over solder ball 370 to conduction element 320 located in the semiconductor chip and to solder ball 380. By employing this indirect routing, a crossing of the path from element 350 to element 360 with the conduction element 330 is enabled, while the substrate has only a single layer of conducting elements.
  • [0037]
    Additionally to the embodiments described herein in detail, the concept of using a conducting element in the semiconductor chip as a functional part of an external layer of conducting elements may be applied to a variety of chip packaging technologies. These include, as non-limiting examples, Flip Chip technology or Carrier Wafer Level Ball grid arrays (CWLB). Thereby, a variety of contact variants to the outside may be employed, such as (non-limiting) the use of solder balls, pins or land grid arrays (LGA). A person skilled in the art can easily transfer the concept applied in the described embodiments to other technologies.
  • [0038]
    In an embodiment of the invention shown in FIG. 9, the chip 10 is mounted on a printed circuit board 400 with solder balls 70 as a connection between chip and board. The electrical path from conduction element 450 to conduction element 460 is routed over solder ball 470 to conduction element 420 located in the semiconductor chip, and to solder ball 480. By employing this indirect routing, a crossing of the path from element 450 to element 460 with the conduction element 430 is enabled at an arbitrary angle, while the printed circuit board has only a single layer of conducting elements.
  • [0039]
    In an embodiment of the invention shown in FIGS. 10 a and 10 b, a coil 300 is part of the semiconductor device. The coil is substantially formed in the layer of conducting elements. In order to enable the coil to be formed from a single layer of conducting elements, conducting element 310 shown in FIG. 9 is provided as a part of the semiconductor chip 10. Best, the coil is only partly overlying semiconductor chip 10 and its main part overlies encapsulating body 150. Hence, undesirable interferences of the high frequency electromagnetic field of the coil with the semiconductor chip can be minimized.

Claims (25)

  1. 1. A semiconductor device comprising:
    a semiconductor chip comprising a first conducting element;
    a second conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a first location; and
    a third conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a second location; and
    a fourth conducting element arranged outside the semiconductor chip;
    wherein a vertical projection of the fourth conducting element on the chip crosses the first conducting element between the first location and the second location.
  2. 2. The semiconductor device according to claim 1, further comprising an insulating layer arranged between the first conducting element and at least one of the second conducting element, third conducting element and fourth conducting element.
  3. 3. The semiconductor device according to claim 1, wherein the second conducting element, third conducting element and fourth conducting element are formed from a common conducting layer.
  4. 4. The semiconductor device according to claim 1, further comprising an encapsulating body encapsulating the semiconductor chip.
  5. 5. The semiconductor device according to claim 1, wherein at least one of the second conducting element, third conducting element and fourth conducting element extend over the semiconductor chip and the encapsulating body.
  6. 6. The semiconductor device according to claim 1, further comprising external connection elements electrically connected to at least one of the second conducting element, third conducting element and fourth conducting element.
  7. 7. The semiconductor device according to claim 6, wherein the external connection elements are solder bumps.
  8. 8. The semiconductor device according to claim 6, wherein the external connection elements are located at positions defining an array.
  9. 9. The semiconductor device according to claim 1, wherein at least one of the first, second, third and fourth conducting elements comprise a metal.
  10. 10. The semiconductor device according to claim 1, wherein at least one of the first, second, third and fourth conducting elements are a part of a coil.
  11. 11. A semiconductor device, comprising:
    a semiconductor chip comprising at least two contact elements and a first conducting element located in the chip, and
    a layer of conducting elements arranged adjacent the chip, comprising a contact region providing an interface to the outside of the semiconductor device, and second and third conducting elements,
    wherein the second conducting element and the third conducting element are connected to the first conducting element located in the chip via contact elements, so that the second and third conducting elements are electrically connected via the first conducting element, and the second conducting element is connected to the contact region.
  12. 12. The semiconductor device according to claim 11, wherein a vertical projection of the first conducting element located in the chip on the layer of conducting elements crosses a fourth conducting element of the layer of conducting elements.
  13. 13. The semiconductor device according to claim 11, further comprising a first dielectric layer arranged between the semiconductor chip and the layer of conducting elements.
  14. 14. The semiconductor device according to claim 13, further comprising a second dielectric layer arranged on a side of the layer of conducting elements opposite the first dielectric layer.
  15. 15. The semiconductor device according to claim 11, wherein the contact region of the layer of conducting elements comprises a solder ball.
  16. 16. The semiconductor device according to claim 11, further comprising a mold material covering a backside and side faces of the semiconductor chip, wherein a part of the layer of conducting elements projects vertically on the mold material covering the side faces of the chip.
  17. 17. The semiconductor device according to claim 11, wherein the layer of conducting elements comprises a metal.
  18. 18. A method of manufacturing semiconductor devices, comprising:
    providing at least two semiconductor chips that each comprise a first conduction line;
    covering the at least two semiconductor chips with mold material;
    applying a metallization layer over the at least two semiconductor chips and the mold material such that the metallization layer contacts each of the first conduction lines at at least two separated locations; and
    separating the at least two semiconductor chips from each other after the application of the metallization layer.
  19. 19. The method according to claim 18, wherein the semiconductor chips are diced semiconductor chips.
  20. 20. The method according to claim 18, wherein a first dielectric layer is applied on at least one of the semiconductor chips before applying the metallization layer, and contact holes are subsequently formed in the first dielectric layer.
  21. 21. The method according to claim 18, wherein a second dielectric layer is applied after application of the metallization layer, and wherein contact holes are subsequently formed in the second dielectric layer.
  22. 22. The method according to claim 18, wherein the metallization layer is etched using a mask so as to produce at least one conduction line.
  23. 23. A method of manufacturing semiconductor devices, comprising:
    providing a semiconductor chip having a first conducting element, which is connected to two contact elements on a face of the chip; and
    providing a layer of conducting elements on a face of the chip,
    wherein a second conducting element and a third conducting element of the layer of conducting elements are connected to the first conducting element located in the chip via contact elements, so that the second and third conducting elements are electrically connected via the first conducting element, and a vertical projection of a fourth conducting element of the layer of conducting elements crosses the first conducting element.
  24. 24. The method of claim 23, wherein the layer of conducting elements is part of a substrate.
  25. 25. The method of claim 23, wherein the layer of conducting elements is part of a printed circuit board.
US11965081 2007-12-27 2007-12-27 Semiconductor device and method for manufacturing a semiconductor device Abandoned US20090166843A1 (en)

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US13152971 US20110227204A1 (en) 2007-12-27 2011-06-03 Semiconductor device and method for manufacturing a semiconductor device
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2302675A1 (en) * 2009-09-29 2011-03-30 STMicroelectronics (Grenoble 2) SAS Electronic circuit with an inductor
US20110134612A1 (en) * 2009-12-04 2011-06-09 Stmicroelectronics (Grenoble) Sas Rebuilt wafer assembly
US8461691B2 (en) 2011-04-29 2013-06-11 Infineon Technologies Ag Chip-packaging module for a chip and a method for forming a chip-packaging module

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150123267A1 (en) * 2013-11-06 2015-05-07 Taiwan Semiconductor Manufacturing Company Ltd. Packaged semiconductor device
US20160343627A1 (en) * 2014-03-06 2016-11-24 Mitsubishi Electric Corporation Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020024136A1 (en) * 2000-06-08 2002-02-28 Grigg Ford B. Ring positionable about a periphery of a contact pad, semiconductor device components including same, and methods for positioning the ring around a contact pad
US20020132413A1 (en) * 2001-03-13 2002-09-19 Ting-Chang Chang Method of fabricating a MOS transistor
US6498396B1 (en) * 1995-03-30 2002-12-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor chip scale package and ball grid array structures
US6845554B2 (en) * 2001-11-22 2005-01-25 Infineon Technologies Ag Method for connection of circuit units

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4032370A1 (en) * 1990-10-12 1992-04-16 Philips Patentverwaltung Compact IC or IC module circuit configuration - uses Kautz cells accommodating rotation of identical IC or IC modules about symmetry axis
US5898223A (en) * 1997-10-08 1999-04-27 Lucent Technologies Inc. Chip-on-chip IC packages
JP4010406B2 (en) * 2000-12-18 2007-11-21 株式会社ルネサステクノロジ The semiconductor integrated circuit device
US20030198032A1 (en) * 2002-04-23 2003-10-23 Paul Collander Integrated circuit assembly and method for making same
US7207096B2 (en) * 2004-01-22 2007-04-24 International Business Machines Corporation Method of manufacturing high performance copper inductors with bond pads

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498396B1 (en) * 1995-03-30 2002-12-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor chip scale package and ball grid array structures
US20020024136A1 (en) * 2000-06-08 2002-02-28 Grigg Ford B. Ring positionable about a periphery of a contact pad, semiconductor device components including same, and methods for positioning the ring around a contact pad
US20020132413A1 (en) * 2001-03-13 2002-09-19 Ting-Chang Chang Method of fabricating a MOS transistor
US6845554B2 (en) * 2001-11-22 2005-01-25 Infineon Technologies Ag Method for connection of circuit units

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2302675A1 (en) * 2009-09-29 2011-03-30 STMicroelectronics (Grenoble 2) SAS Electronic circuit with an inductor
US20110074536A1 (en) * 2009-09-29 2011-03-31 Stmicroelectronics (Grenoble) Sas Electronic circuit with an inductor
US20110134612A1 (en) * 2009-12-04 2011-06-09 Stmicroelectronics (Grenoble) Sas Rebuilt wafer assembly
CN102104030A (en) * 2009-12-04 2011-06-22 意法半导体(格勒诺布尔)公司 Rebuilt wafer assembly
US8461691B2 (en) 2011-04-29 2013-06-11 Infineon Technologies Ag Chip-packaging module for a chip and a method for forming a chip-packaging module

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DE102008064373A1 (en) 2009-07-09 application

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