TWI327744B - Contaminant reducing substrate transport and support system - Google Patents

Contaminant reducing substrate transport and support system Download PDF

Info

Publication number
TWI327744B
TWI327744B TW094105456A TW94105456A TWI327744B TW I327744 B TWI327744 B TW I327744B TW 094105456 A TW094105456 A TW 094105456A TW 94105456 A TW94105456 A TW 94105456A TW I327744 B TWI327744 B TW I327744B
Authority
TW
Taiwan
Prior art keywords
substrate
support
diamond
coating
support system
Prior art date
Application number
TW094105456A
Other languages
English (en)
Chinese (zh)
Other versions
TW200540928A (en
Inventor
Vijay D Parkhe
Matthew Leopold
Timothy Ronan
Todd W Martin
Edward Ng
Nitin Khurana
Song-Moon Shu
Richard Fay
Chris Hagerty
Michael Rice
Darryl Angelo
Kurt J Ahman
Matthew C Tsai
Steve Sansoni
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200540928A publication Critical patent/TW200540928A/zh
Application granted granted Critical
Publication of TWI327744B publication Critical patent/TWI327744B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463Cooling of the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302Mechanical parts of transfer devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00Material or article handling
    • Y10S414/135Associated with semiconductor wafer handling
    • Y10S414/141Associated with semiconductor wafer handling includes means for gripping wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/23Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
TW094105456A 2004-02-24 2005-02-23 Contaminant reducing substrate transport and support system TWI327744B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/786,876 US7824498B2 (en) 2004-02-24 2004-02-24 Coating for reducing contamination of substrates during processing

Publications (2)

Publication Number Publication Date
TW200540928A TW200540928A (en) 2005-12-16
TWI327744B true TWI327744B (en) 2010-07-21

Family

ID=34861866

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105456A TWI327744B (en) 2004-02-24 2005-02-23 Contaminant reducing substrate transport and support system

Country Status (6)

Country Link
US (4) US7824498B2 (https=)
JP (1) JP5270095B2 (https=)
KR (3) KR20120045029A (https=)
CN (3) CN100543959C (https=)
TW (1) TWI327744B (https=)
WO (1) WO2005083752A2 (https=)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7479456B2 (en) * 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US20030099294A1 (en) * 2001-11-27 2003-05-29 Limin Wang Picture level adaptive frame/field coding for digital video content
KR100699994B1 (ko) * 2004-08-30 2007-03-26 삼성에스디아이 주식회사 라미네이션 장비 및 레이저 열전사 방법
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US7672110B2 (en) * 2005-08-29 2010-03-02 Applied Materials, Inc. Electrostatic chuck having textured contact surface
US7389645B2 (en) * 2005-11-04 2008-06-24 Applied Materials, Inc. Radiation shield for cryogenic pump for high temperature physical vapor deposition
EP1960564A1 (en) 2005-12-13 2008-08-27 United Technologies Corporation Process for deposition of amorphous carbon
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP5289307B2 (ja) * 2006-06-02 2013-09-11 スルザー メタプラス ゲーエムベーハー 基板ホルダーによる金属汚染を防止する方法
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7655933B2 (en) * 2006-08-15 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for temperature-controlled ion implantation
US8450193B2 (en) * 2006-08-15 2013-05-28 Varian Semiconductor Equipment Associates, Inc. Techniques for temperature-controlled ion implantation
US20080105201A1 (en) * 2006-11-03 2008-05-08 Applied Materials, Inc. Substrate support components having quartz contact tips
US7378618B1 (en) 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
US20080156260A1 (en) * 2006-12-27 2008-07-03 Memc Electronic Materials, Inc. Wafer Support and Method of Making Wafer Support
US7741764B1 (en) * 2007-01-09 2010-06-22 Chien-Min Sung DLC emitter devices and associated methods
US20080190364A1 (en) * 2007-02-13 2008-08-14 Applied Materials, Inc. Substrate support assembly
US7715170B2 (en) 2007-03-26 2010-05-11 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with separated electrodes
KR100855540B1 (ko) * 2007-07-10 2008-09-01 주식회사 코미코 이온 주입 장치, 이온 주입 장치의 내부 구조물 및 상기이온 주입 장치의 코팅층 형성 방법
WO2009019749A1 (ja) * 2007-08-03 2009-02-12 Teoss Co., Ltd. シリコン支持装置およびこれを用いたシリコン加熱急冷装置
JP4903104B2 (ja) * 2007-09-18 2012-03-28 トーカロ株式会社 半導体加工装置用部材
JP4728306B2 (ja) * 2007-09-18 2011-07-20 トーカロ株式会社 静電チャック部材およびその製造方法
NL1034780C2 (nl) * 2007-11-30 2009-06-03 Xycarb Ceramics B V Inrichting voor het laagsgewijs laten neerslaan van verschillende materialen op een halfgeleider-substraat alsmede een hefpin voor toepassing in een dergelijke inrichting.
JP4764868B2 (ja) * 2007-12-07 2011-09-07 トーカロ株式会社 圧縮機翼及び火力発電用ガスタービン
US20090148256A1 (en) * 2007-12-10 2009-06-11 Nanometrics Incorporated Support Pin with Dome Shaped Upper Surface
JP5241245B2 (ja) * 2008-01-11 2013-07-17 株式会社日立ハイテクノロジーズ 検査装置及び検査方法
NL1036735A1 (nl) * 2008-04-10 2009-10-13 Asml Holding Nv Shear-layer chuck for lithographic apparatus.
TWI475594B (zh) * 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
US20100178137A1 (en) * 2009-01-11 2010-07-15 Applied Materials, Inc. Systems, apparatus and methods for moving substrates
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
SG10201402319QA (en) 2009-05-15 2014-07-30 Entegris Inc Electrostatic chuck with polymer protrusions
US8617668B2 (en) * 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
CN103151266B (zh) * 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
CN102804412A (zh) * 2009-12-14 2012-11-28 丽佳达普株式会社 衬底处理方法
JP5572575B2 (ja) * 2010-05-12 2014-08-13 東京エレクトロン株式会社 基板位置決め装置、基板処理装置、基板位置決め方法及びプログラムを記録した記憶媒体
CN102986017B (zh) 2010-05-28 2015-09-16 恩特格林斯公司 高表面电阻率静电吸盘
WO2012148568A1 (en) * 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
JP5516482B2 (ja) * 2011-04-11 2014-06-11 東京エレクトロン株式会社 基板搬送方法、基板搬送装置、及び塗布現像装置
CN102651331A (zh) * 2011-06-14 2012-08-29 京东方科技集团股份有限公司 基板托盘及柔性电子器件制造方法
TW201324617A (zh) * 2011-12-13 2013-06-16 Metal Ind Res & Dev Ct 具熱膨脹間隙監測功能的加熱裝置
KR20190132561A (ko) 2012-01-06 2019-11-27 노벨러스 시스템즈, 인코포레이티드 적응형 열 교환 방법 및 균일한 열 교환을 위한 시스템
EP3683627A1 (en) 2012-02-03 2020-07-22 ASML Netherlands B.V. Substrate holder and lithographic apparatus
CN103074609A (zh) * 2012-03-16 2013-05-01 光达光电设备科技(嘉兴)有限公司 石墨盘及异形衬底
CN102593028A (zh) * 2012-03-19 2012-07-18 南通富士通微电子股份有限公司 双面贴装器件的基板的固定装置
TWI624862B (zh) * 2012-06-11 2018-05-21 應用材料股份有限公司 在脈衝式雷射退火中使用紅外線干涉技術之熔化深度測定
KR101418301B1 (ko) * 2012-10-05 2014-07-10 위아코퍼레이션 주식회사 다공질 세라믹 테이블
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US9583364B2 (en) 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial compression
CN104797979B (zh) * 2013-01-22 2018-04-17 Asml荷兰有限公司 静电夹具
JP6100564B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 基板処理装置及び載置台
KR101489074B1 (ko) * 2013-07-01 2015-02-04 주식회사 야스 클러스터 장비에 적용되는 정전기부상 기판 이송 시스템
US20150062772A1 (en) * 2013-08-27 2015-03-05 Varian Semiconductor Equipment Associates, Inc Barrier Layer For Electrostatic Chucks
US10431489B2 (en) 2013-12-17 2019-10-01 Applied Materials, Inc. Substrate support apparatus having reduced substrate particle generation
CN104752289B (zh) * 2013-12-31 2018-05-08 北京北方华创微电子装备有限公司 传输系统及半导体加工设备
JP1524299S (https=) * 2014-05-15 2015-05-25
US9410249B2 (en) * 2014-05-15 2016-08-09 Infineon Technologies Ag Wafer releasing
US20150333213A1 (en) * 2014-05-19 2015-11-19 Applied Materials, Inc. Diamond-like carbon coatings for substrate carriers
DE102014109327A1 (de) * 2014-07-03 2016-01-07 Aixtron Se Beschichtetes flaches scheibenförmiges Bauteil in einem CVD-Reaktor
US9517539B2 (en) * 2014-08-28 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer susceptor with improved thermal characteristics
US9799541B1 (en) * 2014-12-18 2017-10-24 Trutag Technologies, Inc. Multiple wafer single bath etcher
JP6698706B2 (ja) * 2015-07-02 2020-05-27 エーエスエムエル ネザーランズ ビー.ブイ. 基板ホルダ、リソグラフィ装置およびデバイス製造方法
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
JP6867149B2 (ja) * 2015-12-25 2021-04-28 日本特殊陶業株式会社 基板保持部材
JP2017168613A (ja) * 2016-03-16 2017-09-21 信越半導体株式会社 熱処理装置
US10704160B2 (en) * 2016-05-10 2020-07-07 Arizona Board Of Regents On Behalf Of Arizona State University Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures
US10261121B2 (en) 2016-05-26 2019-04-16 Intel Corporation Diamond-like carbon coated semiconductor equipment
US10784100B2 (en) * 2016-07-21 2020-09-22 Tokyo Electron Limited Back-side friction reduction of a substrate
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US10941491B2 (en) * 2017-09-25 2021-03-09 Raytheon Technologies Corporation Continuous multiple tow coating reactor
KR102259379B1 (ko) * 2018-01-24 2021-06-01 주식회사 엘지에너지솔루션 배터리 셀의 전극 이송 장치
US11990360B2 (en) 2018-01-31 2024-05-21 Lam Research Corporation Electrostatic chuck (ESC) pedestal voltage isolation
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
CN108538776B (zh) * 2018-03-29 2021-11-16 北京北方华创微电子装备有限公司 静电卡盘及其制造方法
JP7407121B2 (ja) 2018-04-09 2023-12-28 アプライド マテリアルズ インコーポレイテッド パターニング用途のためのカーボンハードマスク及び関連方法
SG11202011779WA (en) * 2018-05-29 2020-12-30 Fabworx Solutions Inc Degas chamber lift hoop
KR102862930B1 (ko) * 2018-06-22 2025-09-19 어플라이드 머티어리얼스, 인코포레이티드 반도체 웨이퍼 프로세싱에서 웨이퍼 후면 손상을 최소화하는 방법들
US10802475B2 (en) * 2018-07-16 2020-10-13 Elite Robotics Positioner for a robotic workcell
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US11114330B2 (en) * 2018-08-24 2021-09-07 Axcelis Technologies, Inc. Substrate support having customizable and replaceable features for enhanced backside contamination performance
KR102490356B1 (ko) * 2018-11-20 2023-01-25 주식회사 원익아이피에스 기판 처리 장치의 내부재 처리 방법
US20220082945A1 (en) * 2018-12-28 2022-03-17 Asml Netherlands B.V. Substrate holder for use in a lithographic apparatus and a method of manufacturing a substrate holder
CN113950732A (zh) * 2019-05-15 2022-01-18 应用材料公司 用于基板处理的斜面剥离及缺陷解决方案
US11639543B2 (en) 2019-05-22 2023-05-02 Thin Film Service, Inc. Tetrahedral amorphous hydrogenated carbon and amorphous siloxane diamond-like nanocomposite
US20210035767A1 (en) * 2019-07-29 2021-02-04 Applied Materials, Inc. Methods for repairing a recess of a chamber component
JP7536547B2 (ja) * 2019-10-02 2024-08-20 キヤノン株式会社 ウエハチャック、その製造方法、及び露光装置
US11842918B2 (en) * 2019-10-02 2023-12-12 Canon Kabushiki Kaisha Wafer chuck, method for producing the same, and exposure apparatus
KR102674234B1 (ko) * 2019-11-12 2024-06-12 주식회사 원익아이피에스 반도체 제조 장치의 프로세싱 방법
US20230031443A1 (en) * 2019-12-26 2023-02-02 Asml Holding N.V. Wafer clamp hard burl production and refurbishment
KR20220126763A (ko) * 2020-01-13 2022-09-16 램 리써치 코포레이션 열적 옥사이드 스프레이 코팅과 개선된 열 팽창 매칭을 위한 혼합된 금속 베이스플레이트들
US20210249284A1 (en) * 2020-02-12 2021-08-12 Applied Materials, Inc. Fast response dual-zone pedestal assembly for selective preclean
WO2021163664A1 (en) * 2020-02-13 2021-08-19 Jabil Inc. Apparatus, system and method for providing a substrate chuck
KR102382779B1 (ko) * 2020-05-22 2022-04-06 (주)아이네쓰 박막증착장치 및 이를 이용한 dlc 박막 코팅 방법
US11664226B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density carbon films for hardmasks and other patterning applications
US11664214B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
KR102622985B1 (ko) * 2020-12-31 2024-01-11 세메스 주식회사 기판 처리 장치
US11699611B2 (en) * 2021-02-23 2023-07-11 Applied Materials, Inc. Forming mesas on an electrostatic chuck
KR102897595B1 (ko) * 2021-07-02 2025-12-10 삼성전자주식회사 반도체 공정 시스템 및 그 제어 방법
US12338527B2 (en) * 2021-09-03 2025-06-24 Applied Materials, Inc. Shutter disk for physical vapor deposition (PVD) chamber
US12497697B2 (en) 2021-10-08 2025-12-16 Applied Materials, Inc. Layer with discrete islands formed on a substrate support
WO2023076359A1 (en) * 2021-10-28 2023-05-04 Entegris, Inc. Electrostatic chuck that includes upper ceramic layer that includes a dielectric layer, and related methods and structures
US12557595B2 (en) 2022-01-26 2026-02-17 Applied Materials, Inc. Methods for electrostatic chuck ceramic surfacing
US20240170321A1 (en) * 2022-11-21 2024-05-23 Applied Materials, Inc. Transfer apparatus, and related components and methods, for transferring substrates
EP4379783A1 (en) * 2022-11-29 2024-06-05 ASML Netherlands B.V. Electrostatic clamp, gripper assembly including the clamp, lithographic system comprising an electrostatic clamp, and method of making an electrostatic clamp
CN120359596A (zh) 2022-12-21 2025-07-22 东京毅力科创株式会社 基板处理方法、基板处理装置及基板处理系统
US12573582B2 (en) 2023-02-28 2026-03-10 Applied Materials Israel Ltd. Moveable support to secure electrically conductive and nonconductive samples in a vacuum chamber
US20240349737A1 (en) * 2023-04-19 2024-10-24 Chen Hollander Pie baking assist apparatus
CN121336146A (zh) * 2023-06-22 2026-01-13 Asml荷兰有限公司 用于最小化热应变的掩模版设计

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH558084A (de) * 1971-07-20 1975-01-15 Bbc Brown Boveri & Cie Halter mit mindestens einem scheibenfoermigen halbleiterelement.
JPS63285892A (ja) 1987-05-19 1988-11-22 Mitsui Eng & Shipbuild Co Ltd 炭化珪素発熱体
US4902535A (en) 1987-12-31 1990-02-20 Air Products And Chemicals, Inc. Method for depositing hard coatings on titanium or titanium alloys
US4987004A (en) * 1988-02-05 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
US5041201A (en) * 1988-09-16 1991-08-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
GB8821944D0 (en) * 1988-09-19 1988-10-19 Gillette Co Method & apparatus for forming surface of workpiece
CA2065581C (en) * 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
US5728465A (en) * 1991-05-03 1998-03-17 Advanced Refractory Technologies, Inc. Diamond-like nanocomposite corrosion resistant coatings
US5352493A (en) * 1991-05-03 1994-10-04 Veniamin Dorfman Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films
FR2712285B1 (fr) * 1993-11-12 1995-12-22 Lorraine Carbone Traitement de surface de matériau carbone pour rendre adhérent un dépôt ultérieur de diamant et pièces revêtues de diamant obtenues.
US5495979A (en) * 1994-06-01 1996-03-05 Surmet Corporation Metal-bonded, carbon fiber-reinforced composites
KR960002534A (ko) 1994-06-07 1996-01-26 이노우에 아키라 감압·상압 처리장치
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
KR19990007993A (ko) * 1995-04-24 1999-01-25 다나베 히로까즈 기상 합성에 의해 형성된 다이아몬드 피복물
TW312613B (https=) 1995-06-22 1997-08-11 Sociere Des Products Nestle Sa
JPH0945756A (ja) * 1995-07-26 1997-02-14 Hitachi Ltd 半導体製造装置および製造方法
US5638251A (en) * 1995-10-03 1997-06-10 Advanced Refractory Technologies, Inc. Capacitive thin films using diamond-like nanocomposite materials
US5669644A (en) * 1995-11-13 1997-09-23 Kokusai Electric Co., Ltd. Wafer transfer plate
US5786086A (en) * 1996-01-02 1998-07-28 Union Camp Corporation Conductive wire coating
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
EP0792853B1 (en) * 1996-02-29 2001-04-25 Bridgestone Corporation Process for making a silicon carbide sintered body
EP0896640B1 (en) * 1996-04-22 2002-02-06 N.V. Bekaert S.A. Diamond-like nanocomposite compositions
TW303505B (en) 1996-05-08 1997-04-21 Applied Materials Inc Substrate support chuck having a contaminant containment layer and method of fabricating same
US5952060A (en) * 1996-06-14 1999-09-14 Applied Materials, Inc. Use of carbon-based films in extending the lifetime of substrate processing system components
US5812362A (en) * 1996-06-14 1998-09-22 Applied Materials, Inc. Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks
CN1178257A (zh) 1996-08-19 1998-04-08 时至准钟表股份有限公司 在导向套筒内表面形成硬质碳膜的方法
WO1998007895A1 (en) * 1996-08-19 1998-02-26 Citizen Watch Co., Ltd. Method of forming hard carbon film on inner circumferential surface of guide bush
JPH10107117A (ja) * 1996-09-30 1998-04-24 Kokusai Electric Co Ltd 基板処理装置
US5718962A (en) * 1996-11-07 1998-02-17 Walling; James H. Decorative ornament and display box
DE69803365T2 (de) * 1997-02-04 2002-10-31 N.V. Bekaert S.A., Zwevegem Beschichtung enthaltend filme aus diamantartigem kohlenstoff und diamantartigem nanokomposit
JP3679882B2 (ja) 1997-02-07 2005-08-03 株式会社荏原製作所 研磨用クロスのドレッサー及びその製造方法
US5977519A (en) * 1997-02-28 1999-11-02 Applied Komatsu Technology, Inc. Heating element with a diamond sealing material
US6312319B1 (en) 1997-04-04 2001-11-06 Timothy J. Donohue Polishing media magazine for improved polishing
EP0885983A1 (en) * 1997-06-19 1998-12-23 N.V. Bekaert S.A. Method for coating a substrate with a diamond like nanocomposite composition
JPH1167427A (ja) * 1997-08-27 1999-03-09 Bridgestone Corp ヒーター部品
US6090733A (en) * 1997-08-27 2000-07-18 Bridgestone Corporation Sintered silicon carbide and method for producing the same
JP4012287B2 (ja) * 1997-08-27 2007-11-21 株式会社ブリヂストン スパッタリングターゲット盤
US5903428A (en) * 1997-09-25 1999-05-11 Applied Materials, Inc. Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
JP4253365B2 (ja) * 1997-10-17 2009-04-08 オリンパス株式会社 ウェハ搬送装置
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
US6215897B1 (en) * 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Automated substrate processing system
US5916370A (en) * 1998-06-12 1999-06-29 Applied Materials, Inc. Semiconductor processing chamber having diamond coated components
US6158647A (en) * 1998-09-29 2000-12-12 Micron Technology, Inc. Concave face wire bond capillary
JP2000332096A (ja) * 1999-05-21 2000-11-30 Bridgestone Corp 製品ホルダー
US6759800B1 (en) * 1999-07-29 2004-07-06 Applied Materials, Inc. Diamond supported photocathodes for electron sources
US6508911B1 (en) * 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
US6386963B1 (en) * 1999-10-29 2002-05-14 Applied Materials, Inc. Conditioning disk for conditioning a polishing pad
US6447374B1 (en) * 1999-12-17 2002-09-10 Applied Materials, Inc. Chemical mechanical planarization system
DE10018143C5 (de) * 2000-04-12 2012-09-06 Oerlikon Trading Ag, Trübbach DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
WO2002001611A2 (en) 2000-06-23 2002-01-03 Applied Materials, Inc. Electrostatic chuck and method of fabricating the same
TW466667B (en) 2000-06-29 2001-12-01 Applied Materials Inc Electrostatic chuck having the minimum contact area
TW512478B (en) * 2000-09-14 2002-12-01 Olympus Optical Co Alignment apparatus
TWI290589B (en) * 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
US6595506B1 (en) * 2000-11-17 2003-07-22 Epion Corporation Apparatus and method for reduced particulate generation during workpiece handling
US6537429B2 (en) * 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
JP2002338388A (ja) 2001-02-15 2002-11-27 Ngk Insulators Ltd ダイヤモンドコート部材
US6528767B2 (en) * 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
CN1473452A (zh) * 2001-07-09 2004-02-04 IBIDEN�ɷ����޹�˾ 陶瓷加热器与陶瓷接合体
US20030047283A1 (en) * 2001-09-10 2003-03-13 Applied Materials, Inc. Apparatus for supporting a substrate and method of fabricating same
JP2003340667A (ja) * 2002-05-30 2003-12-02 Disco Abrasive Syst Ltd チャックテーブル
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
US20040018738A1 (en) 2002-07-22 2004-01-29 Wei Liu Method for fabricating a notch gate structure of a field effect transistor
US20040055709A1 (en) * 2002-09-19 2004-03-25 Applied Materials, Inc. Electrostatic chuck having a low level of particle generation and method of fabricating same
US6853043B2 (en) * 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
US7367872B2 (en) * 2003-04-08 2008-05-06 Applied Materials, Inc. Conditioner disk for use in chemical mechanical polishing
JP4220834B2 (ja) 2003-05-19 2009-02-04 三菱電機株式会社 整流装置
WO2005013334A2 (en) * 2003-08-01 2005-02-10 Sgl Carbon Ag Holder for supporting wafers during semiconductor manufacture
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US7638440B2 (en) * 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
WO2005087974A2 (en) 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
US20050199585A1 (en) * 2004-03-12 2005-09-15 Applied Materials, Inc. Method of depositing an amorphous carbon film for metal etch hardmask application

Also Published As

Publication number Publication date
WO2005083752A3 (en) 2006-01-12
JP5270095B2 (ja) 2013-08-21
US10053778B2 (en) 2018-08-21
CN100543959C (zh) 2009-09-23
KR20070097296A (ko) 2007-10-04
US7824498B2 (en) 2010-11-02
US20140326184A1 (en) 2014-11-06
KR101357097B1 (ko) 2014-02-03
CN101393883A (zh) 2009-03-25
CN1922724A (zh) 2007-02-28
TW200540928A (en) 2005-12-16
WO2005083752A2 (en) 2005-09-09
JP2007527625A (ja) 2007-09-27
CN101393883B (zh) 2011-04-20
KR101400256B1 (ko) 2014-05-27
KR20130069888A (ko) 2013-06-26
US20050252454A1 (en) 2005-11-17
CN101383317B (zh) 2010-12-15
KR20120045029A (ko) 2012-05-08
US8852348B2 (en) 2014-10-07
US20050183669A1 (en) 2005-08-25
US20110017424A1 (en) 2011-01-27
CN101383317A (zh) 2009-03-11

Similar Documents

Publication Publication Date Title
TWI327744B (en) Contaminant reducing substrate transport and support system
JP2007527625A5 (https=)
TWI267563B (en) Diamond coatings on reactor wall and method of manufacturing thereof
TW492075B (en) Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage
JPH05509132A (ja) 化学蒸着法のための素材
JP6263450B2 (ja) 有機単分子膜形成方法
TW200829720A (en) Corrosion-resisting member and method for making the same
KR20170097056A (ko) 복합 기판, 나노카본막의 제작 방법 및 나노카본막
JP2003515257A (ja) 化学蒸着により窒化アルミニウムで被覆した部材
TW201013813A (en) High throughput thermal treatment system and method of operating
JP5289307B2 (ja) 基板ホルダーによる金属汚染を防止する方法
WO2013125598A1 (ja) フッ素含有有機ケイ素化合物薄膜の製造装置、及び、製造方法
Lee et al. Reduction of incubation period by employing OH-terminated Si (001) substrates in the atomic layer deposition of Al2O3
Bult et al. Passivation oxide controlled selective carbon nanotube growth on metal substrates
TW517265B (en) Apparatus for supporting a substrate and method of fabricating same
Srividya et al. Corrosion resistance of diamond-like carbon-coated aluminum films
JP3618032B2 (ja) 静電チャック
US20080050522A1 (en) Preparative method for protective layer of susceptor
CN120857994A (zh) 支承板及支承板的制造方法
JP3937072B2 (ja) ダミーウェハー
TWI337209B (https=)
TWI248123B (en) The method for removing diamond-like carbon films and its products
JPH08288248A (ja) 接液部材
Benndorf et al. H sub 2 O Interaction With Nickel (110): Autocatalytic Decomposition in the Temperature Range From 400 to 550 deg K
Jonas et al. GROWTH AND PROPERTIES OF HYDROGENATED CxNy LAYERS

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent