WO2009019749A1 - シリコン支持装置およびこれを用いたシリコン加熱急冷装置 - Google Patents

シリコン支持装置およびこれを用いたシリコン加熱急冷装置 Download PDF

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Publication number
WO2009019749A1
WO2009019749A1 PCT/JP2007/065278 JP2007065278W WO2009019749A1 WO 2009019749 A1 WO2009019749 A1 WO 2009019749A1 JP 2007065278 W JP2007065278 W JP 2007065278W WO 2009019749 A1 WO2009019749 A1 WO 2009019749A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
pipes
supporting device
raw material
cooling apparatus
Prior art date
Application number
PCT/JP2007/065278
Other languages
English (en)
French (fr)
Inventor
Tsuyoshi Murai
Toshinori Konaka
Original Assignee
Teoss Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teoss Co., Ltd. filed Critical Teoss Co., Ltd.
Priority to PCT/JP2007/065278 priority Critical patent/WO2009019749A1/ja
Priority to JP2008537659A priority patent/JP4294087B2/ja
Priority to KR1020087022204A priority patent/KR101061398B1/ko
Priority to AT07791951T priority patent/ATE539036T1/de
Priority to EP07791951A priority patent/EP2062854B1/en
Priority to RU2009107892/05A priority patent/RU2009107892A/ru
Priority to US12/226,860 priority patent/US20100207312A1/en
Priority to TW097116312A priority patent/TWI446969B/zh
Publication of WO2009019749A1 publication Critical patent/WO2009019749A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/18—Use of auxiliary physical effects, e.g. ultrasonics, irradiation, for disintegrating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Food Science & Technology (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Disintegrating Or Milling (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)

Abstract

　原料シリコンの純度を低下させることがなく、かつ、メンテナンスが容易なシリコン支持装置およびこれを用いたシリコン加熱急冷装置を提供する。 　このシリコン支持装置１４は、冷却媒体Ｌが通流する内部通流路３４が形成された複数のパイプ３２を互いに所定の間隔をあけて配設することによって構成されており、原料シリコン１２を支持するシリコン支持部２２、パイプ３２の外面に接して配設され、原料シリコン１２とパイプ３２との間に介在して原料シリコン１２とパイプ３２とが接触することを防止するチタン製の接触防止材２４、および接触防止材２４をパイプ３２に固定するチタン製の固定部材２６を備えている。
PCT/JP2007/065278 2007-08-03 2007-08-03 シリコン支持装置およびこれを用いたシリコン加熱急冷装置 WO2009019749A1 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
PCT/JP2007/065278 WO2009019749A1 (ja) 2007-08-03 2007-08-03 シリコン支持装置およびこれを用いたシリコン加熱急冷装置
JP2008537659A JP4294087B2 (ja) 2007-08-03 2007-08-03 シリコン支持装置およびこれを用いたシリコン加熱急冷装置
KR1020087022204A KR101061398B1 (ko) 2007-08-03 2007-08-03 실리콘 지지 장치 및 이것을 사용한 실리콘 가열 급냉 장치
AT07791951T ATE539036T1 (de) 2007-08-03 2007-08-03 Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit
EP07791951A EP2062854B1 (en) 2007-08-03 2007-08-03 Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same
RU2009107892/05A RU2009107892A (ru) 2007-08-03 2007-08-03 Опорное устройство для кремниевого материала и оборудование для нагрева и быстрого охлаждения кремниевого материала с использованием этого устройства
US12/226,860 US20100207312A1 (en) 2007-08-03 2007-08-03 Silicon Supporting Apparatus and Silicon Heating and Quenching Equipment Using the Same
TW097116312A TWI446969B (zh) 2007-08-03 2008-05-02 A silicon resin supporting device and a silicon resin heating and quench unit using the supporting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065278 WO2009019749A1 (ja) 2007-08-03 2007-08-03 シリコン支持装置およびこれを用いたシリコン加熱急冷装置

Publications (1)

Publication Number Publication Date
WO2009019749A1 true WO2009019749A1 (ja) 2009-02-12

Family

ID=40340997

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065278 WO2009019749A1 (ja) 2007-08-03 2007-08-03 シリコン支持装置およびこれを用いたシリコン加熱急冷装置

Country Status (8)

Country Link
US (1) US20100207312A1 (ja)
EP (1) EP2062854B1 (ja)
JP (1) JP4294087B2 (ja)
KR (1) KR101061398B1 (ja)
AT (1) ATE539036T1 (ja)
RU (1) RU2009107892A (ja)
TW (1) TWI446969B (ja)
WO (1) WO2009019749A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010017635A (ja) * 2008-07-09 2010-01-28 Teoss Corp シリコン加熱炉及びこれを用いたシリコン破砕装置
EP2280097A1 (en) 2009-07-28 2011-02-02 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
WO2013046270A1 (ja) 2011-09-29 2013-04-04 株式会社テオス 原料シリコン破砕装置
CN108405035A (zh) * 2018-02-26 2018-08-17 亚洲硅业（青海）有限公司 一种多晶硅棒破碎装置及方法
CN110180659A (zh) * 2019-07-03 2019-08-30 山东澳联新材料有限公司 硅料微波加热装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102489372B (zh) * 2011-12-12 2013-09-04 湖南顶立科技有限公司 多晶硅棒破碎方法及设备
CN102586866A (zh) * 2012-02-09 2012-07-18 上海施科特光电材料有限公司 在采用导模法生长片状蓝宝石过程中抑制气泡的方法
CN103599835B (zh) * 2013-11-20 2016-06-15 宁夏宁电光伏材料有限公司 一种硅块破碎方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005103529A (ja) * 2003-10-01 2005-04-21 Iis Materials:Kk シリコン塊の破砕方法
JP2005288332A (ja) 2004-03-31 2005-10-20 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンロッドの破砕方法

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DE3811091A1 (de) * 1988-03-31 1989-10-12 Heliotronic Gmbh Verfahren zum kontaminationsarmen zerkleinern von massivem stueckigem silicium
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
TW484189B (en) * 1999-11-17 2002-04-21 Tokyo Electron Ltd Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method
US6632280B2 (en) * 2000-01-31 2003-10-14 Shin-Etsu Handotai Co., Ltd. Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
JP4158386B2 (ja) * 2002-02-28 2008-10-01 東京エレクトロン株式会社 冷却装置及びこれを用いた熱処理装置
JP2004131373A (ja) * 2002-09-09 2004-04-30 Corning Inc シリカ・チタニア極端紫外線光学素子の製造方法
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US20050217799A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2005103529A (ja) * 2003-10-01 2005-04-21 Iis Materials:Kk シリコン塊の破砕方法
JP2005288332A (ja) 2004-03-31 2005-10-20 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンロッドの破砕方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010017635A (ja) * 2008-07-09 2010-01-28 Teoss Corp シリコン加熱炉及びこれを用いたシリコン破砕装置
EP2280097A1 (en) 2009-07-28 2011-02-02 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
US8490901B2 (en) 2009-07-28 2013-07-23 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
US9297586B2 (en) 2009-07-28 2016-03-29 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
WO2013046270A1 (ja) 2011-09-29 2013-04-04 株式会社テオス 原料シリコン破砕装置
CN108405035A (zh) * 2018-02-26 2018-08-17 亚洲硅业（青海）有限公司 一种多晶硅棒破碎装置及方法
CN108405035B (zh) * 2018-02-26 2020-07-28 亚洲硅业(青海)股份有限公司 一种多晶硅棒破碎装置及方法
CN110180659A (zh) * 2019-07-03 2019-08-30 山东澳联新材料有限公司 硅料微波加热装置

Also Published As

Publication number Publication date
US20100207312A1 (en) 2010-08-19
KR101061398B1 (ko) 2011-09-02
ATE539036T1 (de) 2012-01-15
RU2009107892A (ru) 2013-03-20
JPWO2009019749A1 (ja) 2010-10-28
TWI446969B (zh) 2014-08-01
KR20100057472A (ko) 2010-05-31
JP4294087B2 (ja) 2009-07-08
TW200906491A (en) 2009-02-16
EP2062854B1 (en) 2011-12-28
EP2062854A1 (en) 2009-05-27
EP2062854A4 (en) 2010-11-03

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