WO2014008891A3 - Metall-keramik-substrat - Google Patents

Metall-keramik-substrat Download PDF

Info

Publication number
WO2014008891A3
WO2014008891A3 PCT/DE2013/100255 DE2013100255W WO2014008891A3 WO 2014008891 A3 WO2014008891 A3 WO 2014008891A3 DE 2013100255 W DE2013100255 W DE 2013100255W WO 2014008891 A3 WO2014008891 A3 WO 2014008891A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
substrate body
ceramic substrate
face
layers
Prior art date
Application number
PCT/DE2013/100255
Other languages
English (en)
French (fr)
Other versions
WO2014008891A2 (de
Inventor
Andreas Meyer
Christoph WEHE
Jürgen SCHULZ-HARDER
Original Assignee
Curamik Electronics Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Curamik Electronics Gmbh filed Critical Curamik Electronics Gmbh
Publication of WO2014008891A2 publication Critical patent/WO2014008891A2/de
Publication of WO2014008891A3 publication Critical patent/WO2014008891A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Laminated Bodies (AREA)

Abstract

Metall-Keramik-Substrat mit mehreren einen Substratkörper bildenden Schichten, die stapelartig aufeinander liegend und miteinander flächig zu dem Substratkörper verbunden sind und von denen wenigstens eine aus Keramik besteht, mit wenigstens einer äußeren Metallisierung, die an wenigstens einer Oberflächenseite des Substratkörpers vorgesehen und zur Ausbildung von Leiterbahnen, Kontaktflächen und/oder Befestigungsflächen für Bauelemente bildenden Bereichen strukturiert ist, sowie mit einer Kühlerstruktur, die von wenigstens einem von einem Kühlmedium, vorzugsweise von einem flüssigen Kühlmedium durchströmbaren Strömungs- oder Kühlkanal gebildet ist.
PCT/DE2013/100255 2012-07-11 2013-07-10 Metall-keramik-substrat WO2014008891A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012106244.7A DE102012106244B4 (de) 2012-07-11 2012-07-11 Metall-Keramik-Substrat
DE102012106244.7 2012-07-11

Publications (2)

Publication Number Publication Date
WO2014008891A2 WO2014008891A2 (de) 2014-01-16
WO2014008891A3 true WO2014008891A3 (de) 2014-04-10

Family

ID=48979494

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2013/100255 WO2014008891A2 (de) 2012-07-11 2013-07-10 Metall-keramik-substrat

Country Status (2)

Country Link
DE (1) DE102012106244B4 (de)
WO (1) WO2014008891A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107924897B (zh) * 2015-09-18 2020-10-23 株式会社T.Rad 层叠芯体型散热器

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3038152A1 (de) * 2014-12-26 2016-06-29 Kabushiki Kaisha Toshiba Leiterplatte und halbleitergehäuse mit leiterplatte
DE102015219565A1 (de) * 2015-10-09 2017-04-13 Continental Automotive Gmbh Kühlkörper, Verfahren zur Herstellung eines Kühlkörpers und Elektronikmodul mit einem Kühlkörper
CN105188260B (zh) * 2015-11-02 2018-11-06 中国电子科技集团公司第二十六研究所 印制电路板内嵌流道液冷换热装置
DE202016100481U1 (de) * 2016-02-01 2017-05-04 Gebr. Bode Gmbh & Co. Kg Elektronikmodul mit einer Leistungshalbleiteranordnung
CN105491822B (zh) * 2016-02-04 2018-02-16 中国电子科技集团公司第二十六研究所 多层印制电路板集成液冷通道制作方法
KR20190137086A (ko) * 2017-04-06 2019-12-10 세람테크 게엠베하 2개의 측들 상에서 냉각되는 회로
CN107734840B (zh) * 2017-11-29 2023-08-18 中国电子科技集团公司第二十六研究所 基于印制电路板三维微通道阵列液冷冷却结构
CN107979913A (zh) * 2017-12-28 2018-05-01 珠海杰赛科技有限公司 一种中空内埋式盲槽散热印刷电路板
DE102018112000B4 (de) * 2018-05-18 2024-08-08 Rogers Germany Gmbh System zum Kühlen eines Metall-Keramik-Substrats, ein Metall-Keramik-Substrat und Verfahren zum Herstellen des Systems
DE102019113308A1 (de) * 2019-05-20 2020-11-26 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik- Substrat, hergestellt mit einem solchen Verfahren

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3908996A1 (de) * 1989-03-18 1990-09-20 Abb Patent Gmbh Fluessigkeitskuehlkoerper und verfahren zu seiner herstellung
DE19733455A1 (de) * 1997-08-02 1999-02-04 Curamik Electronics Gmbh Wärmetauscheranordnung sowie Kühlsystem mit wenigstens einer derartigen Wärmetauscheranordnung
DE19956565A1 (de) * 1999-11-24 2001-05-31 Laserline Ges Fuer Entwicklung Verfahren zum Herstellen einer Wärmesenke für elektrische Bauelemente sowie Wärmesenke oder Kühler für elektrische Bauelemente
US6480514B1 (en) * 1999-10-21 2002-11-12 Jenoptik Aktiengesellschaft Device for cooling diode lasers
DE10229711A1 (de) * 2002-07-02 2004-01-15 Curamik Electronics Gmbh Halbleitermodul
US20050189342A1 (en) * 2004-02-23 2005-09-01 Samer Kabbani Miniature fluid-cooled heat sink with integral heater
JP2007027570A (ja) * 2005-07-20 2007-02-01 Murata Mfg Co Ltd セラミック多層基板、その製造方法、およびパワー半導体モジュール
EP1959528A2 (de) * 2007-02-13 2008-08-20 Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH Diodenlaseranordnung sowie Verfahren zum Herstellen einer solchen Anordnung
DE102008001230A1 (de) * 2007-04-26 2008-10-30 Ceramtec Ag Kühldose für Bauelemente oder Schaltungen
US20110308791A1 (en) * 2010-06-18 2011-12-22 Baker Hughes Incorporated Apparatus for Use Downhole Including Devices Having Heat Carrier Channels
US20120006383A1 (en) * 2008-11-20 2012-01-12 Donnelly Sean M Heat exchanger apparatus and methods of manufacturing cross reference

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2213115C3 (de) 1972-03-17 1975-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum hochfesten Verbinden von Keramiken aus Karbiden, einschließlich des Diamanten, Boriden, Nitriden oder Suiziden mit Metall nach dem Trocken-Lötverfahren
US3766634A (en) 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
US3744120A (en) 1972-04-20 1973-07-10 Gen Electric Direct bonding of metals with a metal-gas eutectic
JPH0810710B2 (ja) 1984-02-24 1996-01-31 株式会社東芝 良熱伝導性基板の製造方法
FR2578099B1 (fr) * 1985-02-26 1987-12-04 Eurofarad Substrat monolithique pour composant electronique de puissance, et procede pour sa fabrication
IT1286374B1 (it) * 1995-12-19 1998-07-08 Merloni Termosanitari Spa Dispositivo per lo scambio di calore e/o materia
DE19710783C2 (de) * 1997-03-17 2003-08-21 Curamik Electronics Gmbh Kühler zur Verwendung als Wärmesenke für elektrische Bauelemente oder Schaltkreise
US6242075B1 (en) * 1998-11-20 2001-06-05 Hewlett-Packard Company Planar multilayer ceramic structures with near surface channels
DE10035170B4 (de) * 2000-07-19 2005-11-24 Siemens Ag Keramikkörper mit Temperiervorrichtung, Verfahren zum Herstellen und Verwendung des Keramikkörpers
CN100584169C (zh) * 2006-04-21 2010-01-20 富准精密工业(深圳)有限公司 液冷散热装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3908996A1 (de) * 1989-03-18 1990-09-20 Abb Patent Gmbh Fluessigkeitskuehlkoerper und verfahren zu seiner herstellung
DE19733455A1 (de) * 1997-08-02 1999-02-04 Curamik Electronics Gmbh Wärmetauscheranordnung sowie Kühlsystem mit wenigstens einer derartigen Wärmetauscheranordnung
US6480514B1 (en) * 1999-10-21 2002-11-12 Jenoptik Aktiengesellschaft Device for cooling diode lasers
DE19956565A1 (de) * 1999-11-24 2001-05-31 Laserline Ges Fuer Entwicklung Verfahren zum Herstellen einer Wärmesenke für elektrische Bauelemente sowie Wärmesenke oder Kühler für elektrische Bauelemente
DE10229711A1 (de) * 2002-07-02 2004-01-15 Curamik Electronics Gmbh Halbleitermodul
US20050189342A1 (en) * 2004-02-23 2005-09-01 Samer Kabbani Miniature fluid-cooled heat sink with integral heater
JP2007027570A (ja) * 2005-07-20 2007-02-01 Murata Mfg Co Ltd セラミック多層基板、その製造方法、およびパワー半導体モジュール
EP1959528A2 (de) * 2007-02-13 2008-08-20 Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH Diodenlaseranordnung sowie Verfahren zum Herstellen einer solchen Anordnung
DE102008001230A1 (de) * 2007-04-26 2008-10-30 Ceramtec Ag Kühldose für Bauelemente oder Schaltungen
US20120006383A1 (en) * 2008-11-20 2012-01-12 Donnelly Sean M Heat exchanger apparatus and methods of manufacturing cross reference
US20110308791A1 (en) * 2010-06-18 2011-12-22 Baker Hughes Incorporated Apparatus for Use Downhole Including Devices Having Heat Carrier Channels

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107924897B (zh) * 2015-09-18 2020-10-23 株式会社T.Rad 层叠芯体型散热器

Also Published As

Publication number Publication date
WO2014008891A2 (de) 2014-01-16
DE102012106244B4 (de) 2020-02-20
DE102012106244A1 (de) 2014-05-28

Similar Documents

Publication Publication Date Title
WO2014008891A3 (de) Metall-keramik-substrat
WO2014138493A3 (en) Substrate-less interproser technology for a stacked silicon interconnect technology (ssit) product
WO2011097089A3 (en) Recessed semiconductor substrates
WO2012087474A3 (en) A multi-chip package having a substrate with a plurality of vertically embedded die and a process of forming the same
WO2011011083A3 (en) Waved filter media and elements
IN2014CN03370A (de)
MX347413B (es) Medio de impresion.
WO2008153684A3 (en) Articles comprising wettable structured surfaces
WO2013106043A3 (en) Article for co2 capture having heat exchange capability
WO2009108712A3 (en) Structural element
MY165163A (en) Honeycomb shaped porous ceramic body, manufacturing method for same, and honeycomb shaped ceramic separation membrane structure
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2014186262A3 (en) Heat spreading tape
WO2012024696A3 (en) Laser treatment of a medium for microfluidics and various other applications
JP2011100877A5 (de)
WO2008099933A1 (ja) 半導体パッケージ
WO2015082697A3 (en) Bearing element and method for manufacturing a bearing element
WO2011124205A3 (de) Verpackung für metall-keramik-substrate sowie verfahren zum verpacken solcher substrate
WO2014017871A3 (ko) 반도체 발광소자
WO2012094691A3 (de) Reibmaterial
EP2477218A3 (de) Doppelseitiges Substrat, Halbleitervorrichtung und Herstellungsverfahren dafür
WO2010114766A3 (en) Thermoelectric devices including thermoelectric elements having off-set metal pads and related structures, methods, and systems
WO2010129405A3 (en) Nickel-based bonding of semiconductor wafers
WO2012047069A3 (ko) 발광소자 및 그 제조방법
WO2012007765A3 (en) Electronic device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13747958

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 13747958

Country of ref document: EP

Kind code of ref document: A2