WO2014017871A3 - 반도체 발광소자 - Google Patents
반도체 발광소자 Download PDFInfo
- Publication number
- WO2014017871A3 WO2014017871A3 PCT/KR2013/006742 KR2013006742W WO2014017871A3 WO 2014017871 A3 WO2014017871 A3 WO 2014017871A3 KR 2013006742 W KR2013006742 W KR 2013006742W WO 2014017871 A3 WO2014017871 A3 WO 2014017871A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- emitting device
- semiconductor light
- semiconductor layers
- supporting substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 9
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
본 개시는 제1 면과 제1 면에 대향하는 제2 면을 가지는 지지 기판(Supporting substrate); 제1 면상에 형성된 적어도 한 개의 반도체 적층체;로서, 의 반도체층을 구비하는, 적어도 한 개의 반도체 적층체; 복수의 반도체층의 제2 반도체층 측과 지지 기판의 제1 면 측을 접합시키는 접합층(Bonded layer); 그리고, 제1 면에 형성되며, 복수의 반도체층 쪽으로 개방되어 있으며, 복수의 반도체층으로 전류 공급을 위해 구비되는 접합층 제거 면(Bonded layer-removed surface);을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/414,384 US9362446B2 (en) | 2012-07-26 | 2013-07-26 | Semiconductor light-emitting device |
CN201380039741.4A CN104508841B (zh) | 2012-07-26 | 2013-07-26 | 半导体发光器件 |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120081788A KR101928328B1 (ko) | 2012-07-26 | 2012-07-26 | 반도체 발광소자 |
KR10-2012-0081788 | 2012-07-26 | ||
KR1020120081785A KR20140013690A (ko) | 2012-07-26 | 2012-07-26 | 반도체 발광소자 |
KR10-2012-0081785 | 2012-07-26 | ||
KR1020120098199A KR20140031641A (ko) | 2012-09-05 | 2012-09-05 | 반도체 발광소자 |
KR10-2012-0098199 | 2012-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2014017871A2 WO2014017871A2 (ko) | 2014-01-30 |
WO2014017871A3 true WO2014017871A3 (ko) | 2014-03-20 |
Family
ID=49997931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2013/006742 WO2014017871A2 (ko) | 2012-07-26 | 2013-07-26 | 반도체 발광소자 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9362446B2 (ko) |
CN (1) | CN104508841B (ko) |
WO (1) | WO2014017871A2 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9299742B2 (en) | 2011-08-15 | 2016-03-29 | Micron Technology, Inc. | High-voltage solid-state transducers and associated systems and methods |
WO2013187723A1 (ko) * | 2012-06-14 | 2013-12-19 | An Sang Jeong | 반도체 발광소자 및 이의 제조 방법 |
TWI568026B (zh) | 2014-11-04 | 2017-01-21 | 錼創科技股份有限公司 | 發光裝置 |
DE102015107526A1 (de) * | 2015-05-13 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Modul |
US11469138B2 (en) * | 2018-05-04 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via for coupling attached component upper electrode to substrate |
TWI785106B (zh) * | 2018-08-28 | 2022-12-01 | 晶元光電股份有限公司 | 半導體裝置 |
CN116544323B (zh) * | 2023-07-06 | 2023-09-01 | 江西兆驰半导体有限公司 | 一种led芯片的制备方法及led芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001230448A (ja) * | 1997-01-31 | 2001-08-24 | Matsushita Electric Ind Co Ltd | 発光素子および発光装置ならびにそれらの製造方法 |
KR20030038072A (ko) * | 2001-11-08 | 2003-05-16 | 한국전자통신연구원 | 산화막 전류 구경을 갖는 장파장용 수직 공진 표면 방출레이저 및 그 제조 방법 |
KR20070079956A (ko) * | 2007-07-03 | 2007-08-08 | 한국광기술원 | 칩스케일 패키징 발광소자 및 그의 제조방법 |
KR20100044726A (ko) * | 2008-10-22 | 2010-04-30 | 삼성엘이디 주식회사 | 반도체 발광 소자 |
US20110180831A1 (en) * | 2008-04-06 | 2011-07-28 | Song June O | Luminous element |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4368225B2 (ja) * | 2004-03-10 | 2009-11-18 | 三洋電機株式会社 | 窒化物系半導体発光素子の製造方法 |
JP5193048B2 (ja) * | 2005-09-30 | 2013-05-08 | ソウル オプト デバイス カンパニー リミテッド | 垂直に積層された発光ダイオードを有する発光素子 |
TWI372478B (en) * | 2008-01-08 | 2012-09-11 | Epistar Corp | Light-emitting device |
US8058669B2 (en) * | 2008-08-28 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode integration scheme |
TWI414088B (zh) * | 2009-12-16 | 2013-11-01 | Epistar Corp | 發光元件及其製造方法 |
KR20110082863A (ko) | 2010-01-12 | 2011-07-20 | 삼성엘이디 주식회사 | 반도체 발광소자용 지지 웨이퍼, 그 제조 방법 및 이를 이용한 수직 구조 반도체 발광소자의 제조 방법 |
CN102770977A (zh) * | 2010-02-25 | 2012-11-07 | 旭硝子株式会社 | 发光元件搭载用基板及发光装置 |
US8901586B2 (en) | 2010-07-12 | 2014-12-02 | Samsung Electronics Co., Ltd. | Light emitting device and method of manufacturing the same |
US8198109B2 (en) * | 2010-08-27 | 2012-06-12 | Quarkstar Llc | Manufacturing methods for solid state light sheet or strip with LEDs connected in series for general illumination |
KR101194844B1 (ko) | 2010-11-15 | 2012-10-25 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
US8653542B2 (en) * | 2011-01-13 | 2014-02-18 | Tsmc Solid State Lighting Ltd. | Micro-interconnects for light-emitting diodes |
CN102231378B (zh) * | 2011-05-25 | 2013-05-29 | 映瑞光电科技(上海)有限公司 | 一种led封装结构及其制备方法 |
-
2013
- 2013-07-26 WO PCT/KR2013/006742 patent/WO2014017871A2/ko active Application Filing
- 2013-07-26 US US14/414,384 patent/US9362446B2/en active Active
- 2013-07-26 CN CN201380039741.4A patent/CN104508841B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001230448A (ja) * | 1997-01-31 | 2001-08-24 | Matsushita Electric Ind Co Ltd | 発光素子および発光装置ならびにそれらの製造方法 |
KR20030038072A (ko) * | 2001-11-08 | 2003-05-16 | 한국전자통신연구원 | 산화막 전류 구경을 갖는 장파장용 수직 공진 표면 방출레이저 및 그 제조 방법 |
KR20070079956A (ko) * | 2007-07-03 | 2007-08-08 | 한국광기술원 | 칩스케일 패키징 발광소자 및 그의 제조방법 |
US20110180831A1 (en) * | 2008-04-06 | 2011-07-28 | Song June O | Luminous element |
KR20100044726A (ko) * | 2008-10-22 | 2010-04-30 | 삼성엘이디 주식회사 | 반도체 발광 소자 |
Also Published As
Publication number | Publication date |
---|---|
US9362446B2 (en) | 2016-06-07 |
WO2014017871A2 (ko) | 2014-01-30 |
CN104508841B (zh) | 2018-05-22 |
US20150144870A1 (en) | 2015-05-28 |
CN104508841A (zh) | 2015-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2014017871A3 (ko) | 반도체 발광소자 | |
WO2012108627A3 (en) | Light emitting diode having photonic crystal structure and method of fabricating the same | |
WO2012164437A3 (en) | Light emitting device bonded to a support substrate | |
WO2012057517A3 (ko) | 화합물 반도체 장치 및 화합물 반도체 제조방법 | |
WO2014112954A8 (en) | Substrate for semiconductor packaging and method of forming same | |
WO2012057893A3 (en) | Multiple bonding layers for thin-wafer handling | |
WO2013051875A3 (ko) | 유기 발광 소자 및 이의 제조방법 | |
WO2013040423A3 (en) | Abrasive article and method of forming | |
WO2012112873A3 (en) | Flexible light emitting semiconductor device | |
WO2009142391A3 (ko) | 발광소자 패키지 및 그 제조방법 | |
IN2015DN00551A (ko) | ||
TW201130173A (en) | Semiconductor light emitting device and method for manufacturing same | |
PH12015502664A1 (en) | Daylight redirecting glazing laminates | |
WO2013025402A3 (en) | Two part flexible light emitting semiconductor device | |
WO2013111542A9 (ja) | 窒化物半導体発光装置 | |
WO2010146390A3 (en) | Light emitting diodes | |
WO2012001478A3 (zh) | 具有精密涂布之波长转换层之晶圆式发光装置 | |
EP2477218A3 (en) | Double-sided substrate, semiconductor device and method for the same | |
EP2503603A3 (en) | Light emitting device and method for manufacturing the same | |
EP2355175A3 (en) | Light emitting device, method of manufacturing the same, light emitting device package and lighting system | |
IN2012DE00204A (ko) | ||
WO2010044642A3 (en) | Semiconductor light emitting device and method for manufacturing the same | |
WO2008152945A1 (ja) | 半導体発光装置及びその製造方法 | |
WO2016068533A3 (ko) | 고효율 발광 장치 | |
EP2605296A3 (en) | Light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13823493 Country of ref document: EP Kind code of ref document: A2 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14414384 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13823493 Country of ref document: EP Kind code of ref document: A2 |