ATE539036T1 - Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit - Google Patents

Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit

Info

Publication number
ATE539036T1
ATE539036T1 AT07791951T AT07791951T ATE539036T1 AT E539036 T1 ATE539036 T1 AT E539036T1 AT 07791951 T AT07791951 T AT 07791951T AT 07791951 T AT07791951 T AT 07791951T AT E539036 T1 ATE539036 T1 AT E539036T1
Authority
AT
Austria
Prior art keywords
silicon
supporting
heating
pipe
rapidly cooling
Prior art date
Application number
AT07791951T
Other languages
English (en)
Inventor
Tsuyoshi Murai
Toshinori Konaka
Original Assignee
Teoss Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teoss Co Ltd filed Critical Teoss Co Ltd
Application granted granted Critical
Publication of ATE539036T1 publication Critical patent/ATE539036T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/18—Use of auxiliary physical effects, e.g. ultrasonics, irradiation, for disintegrating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Food Science & Technology (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
  • Disintegrating Or Milling (AREA)
AT07791951T 2007-08-03 2007-08-03 Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit ATE539036T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065278 WO2009019749A1 (ja) 2007-08-03 2007-08-03 シリコン支持装置およびこれを用いたシリコン加熱急冷装置

Publications (1)

Publication Number Publication Date
ATE539036T1 true ATE539036T1 (de) 2012-01-15

Family

ID=40340997

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07791951T ATE539036T1 (de) 2007-08-03 2007-08-03 Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit

Country Status (8)

Country Link
US (1) US20100207312A1 (de)
EP (1) EP2062854B1 (de)
JP (1) JP4294087B2 (de)
KR (1) KR101061398B1 (de)
AT (1) ATE539036T1 (de)
RU (1) RU2009107892A (de)
TW (1) TWI446969B (de)
WO (1) WO2009019749A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5198169B2 (ja) * 2008-07-09 2013-05-15 株式会社テオス シリコン加熱炉及びこれを用いたシリコン破砕装置
US8490901B2 (en) 2009-07-28 2013-07-23 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
US20140239103A1 (en) 2011-09-29 2014-08-28 Choshu Industry Co., Ltd Raw silicon crusher
CN102489372B (zh) * 2011-12-12 2013-09-04 湖南顶立科技有限公司 多晶硅棒破碎方法及设备
CN102586866A (zh) * 2012-02-09 2012-07-18 上海施科特光电材料有限公司 在采用导模法生长片状蓝宝石过程中抑制气泡的方法
CN103599835B (zh) * 2013-11-20 2016-06-15 宁夏宁电光伏材料有限公司 一种硅块破碎方法
CN108405035B (zh) * 2018-02-26 2020-07-28 亚洲硅业(青海)股份有限公司 一种多晶硅棒破碎装置及方法
CN110180659A (zh) * 2019-07-03 2019-08-30 山东澳联新材料有限公司 硅料微波加热装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3811091A1 (de) * 1988-03-31 1989-10-12 Heliotronic Gmbh Verfahren zum kontaminationsarmen zerkleinern von massivem stueckigem silicium
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
TW484189B (en) * 1999-11-17 2002-04-21 Tokyo Electron Ltd Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method
US6632280B2 (en) * 2000-01-31 2003-10-14 Shin-Etsu Handotai Co., Ltd. Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
JP4158386B2 (ja) * 2002-02-28 2008-10-01 東京エレクトロン株式会社 冷却装置及びこれを用いた熱処理装置
JP2004131373A (ja) * 2002-09-09 2004-04-30 Corning Inc シリカ・チタニア極端紫外線光学素子の製造方法
JP4340963B2 (ja) * 2003-10-01 2009-10-07 株式会社 アイアイエスマテリアル スクラップシリコン塊の破砕方法
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US20050217799A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly
JP2005288332A (ja) * 2004-03-31 2005-10-20 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンロッドの破砕方法

Also Published As

Publication number Publication date
TWI446969B (zh) 2014-08-01
EP2062854A4 (de) 2010-11-03
JP4294087B2 (ja) 2009-07-08
US20100207312A1 (en) 2010-08-19
JPWO2009019749A1 (ja) 2010-10-28
EP2062854A1 (de) 2009-05-27
KR20100057472A (ko) 2010-05-31
WO2009019749A1 (ja) 2009-02-12
TW200906491A (en) 2009-02-16
EP2062854B1 (de) 2011-12-28
RU2009107892A (ru) 2013-03-20
KR101061398B1 (ko) 2011-09-02

Similar Documents

Publication Publication Date Title
ATE539036T1 (de) Siliciumtragvorrichtung und vorrichtung zum erhitzen und schnellen abkühlen von silicium damit
PH12018501544A1 (en) Heat dissipation apparatus and methods for uv-led photoreactors
TWI456638B (zh) 具有區域依賴性熱效率之溫度受控電漿製程腔室部件
DE602004031061D1 (de) Vakuum-Wärmebehandlungsofen der Gaskühlungsart und Vorrichtung zum Wechseln der Richtung von Kühlgas
TW200612512A (en) Substrate heating sapparatus
ATE389454T1 (de) Assayvorrichtung und verfahren mit gesteuertem fluss
ATE440376T1 (de) Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats
ATE512714T1 (de) Mikroelektronische vorrichtung mit heizanordnung
TW200507158A (en) Substrate support having dynamic temperature control
TW200723430A (en) Substrate holding member and substrate treatment device
TW200717189A (en) Lithographic apparatus, device manufacturing method and device manufactured thereby
JP2014534614A5 (de)
MX2009005530A (es) Dispositivo de sujecion para placas del modulo de flujo, placas del reactor o placas del intercambiador de calor.
FR2897783B1 (fr) Dispositif pour le controle microbiologique, ensembles de controle et d'incubation le comportant et procede le mettant en oeuvre
DE602008002919D1 (de) Flüssigkeitstrennungsstruktur und verfahren zur he
ATE500607T1 (de) Verfahren und vorrichtung zum thermischen behandeln von substraten
ATE522118T1 (de) Tiegelboden, gargerät damit und verfahren zum betreiben solch eines gargeräts
DE50210776D1 (de) Vorrichtung zum vergüten von walzgut mit grosser länge
DE502004009948D1 (de) Verlegevorrichtung für Kühl- oder Heizmedien führende Rohre einer Flächentemperiervorrichtung
FR2941302B1 (fr) Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant".
DE10347022A1 (de) Oberfläche mit reduzierter Partikelablagerung und reduzierter Eisbildung
ATE543942T1 (de) Vorrichtung zum aufheizen eines wärmeträgers für insbesondere wäschereimaschinen und bevorzugte verwendungen der vorrichtung
AU6096900A (en) Apparatus and method for temperature control of ic device during test
ATE555231T1 (de) Heizvorrichtung vom partitionstyp
ATE514183T1 (de) Verfahren und anordnung zum thermischen behandeln von substraten