TWI327744B - Contaminant reducing substrate transport and support system - Google Patents

Contaminant reducing substrate transport and support system Download PDF

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Publication number
TWI327744B
TWI327744B TW094105456A TW94105456A TWI327744B TW I327744 B TWI327744 B TW I327744B TW 094105456 A TW094105456 A TW 094105456A TW 94105456 A TW94105456 A TW 94105456A TW I327744 B TWI327744 B TW I327744B
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substrate
support
diamond
coating
support system
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TW094105456A
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TW200540928A (en
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Vijay D Parkhe
Matthew Leopold
Timothy Ronan
Todd W Martin
Edward Ng
Nitin Khurana
Song-Moon Shu
Richard Fay
Chris Hagerty
Michael Rice
Darryl Angelo
Kurt J Ahman
Matthew C Tsai
Steve Sansoni
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)

Description

1327744 (i) 一小於約0 · 3的摩擦係數； (ii) 一至少約8GPa的硬度；及 (iii) 一小於約5 X 1012atoms/cm2之金屬的金屬 濃度級， 藉此該接觸表面在直接或間接接觸一基板時係降 低一基板之污染。
3 0.如申請專利範圍第29項之基板輸送臂，其中該接觸表 面包含一或多個突起的突出物，以使該基板實質上僅 接觸該突起的突出物，藉此最小化與該葉片之接觸。 31. —種多腔體基板處理設備，其包含： (a) 一輸送腔，其包含一輸送臂以在腔體之間輸送一 基板； (b) 一加熱腔，用以加熱該基板，該加熱腔包含一加 熱台座以支撐該基板於其上；
(c) 一預清洗腔，用於藉由暴露該基板到一激發的氣 體中來清洗一基板，該預清洗腔包含一預清洗支 撐件以支撐該基板於其上； (d) 一沉積腔，用於沉積一材料在該基板上，該沉積 腔包含一沉積支撐件以支撐該基板於其上； (e) 一冷卻腔，用於冷卻該基板，該冷卻腔包含一冷 卻台座以支撐該基板於其上； (f) 一或多個在該等腔體中之升舉組件，用於升舉及 61 降低該 基板到該等以*切件中至少一 者之 (g) —控制 *玄基板 及支撐 其中該 預清洗支撐 該塗覆包含 覆包含有以 該類鑽石塗 10 %的氩、 且該類鑽石 ⑴一 (ii) 一 (iii) - 藉此該 低一基板之 器，用以控制該輪读 送臂及升舉組件來運送 到母個腔體中，並 亚敌置該基板在該等台座 件之上， 輸送臂、升舉組件、加熱…冷卻台座、 :及:冗積支揮件中至少一者具有一塗覆， 於。玄本雜上之類鑽石塗覆該類鑽石塗 下互連網&，（丨)碳及氩，及(ii)矽及氧， 覆的原子組成為50 %〜90 %的碳、5 %〜 1 〇 /。〜2 0 %的矽，以及5 %〜1 〇 %的氧， 塗復具有一接觸表面，其包含： 小於約0 · 3的摩擦係數； 至少約8GPa的硬度；及 小於約5 X l〇l2at〇ms/cm2之金屬的金屬 濃度級， 接觸表面在直接或間接接觸一基板時係降 污染。 一種基板支撐件，其包含： (a) 一陶資•結構，具有—電極嵌設於其中’該電極係 可充電以靜電支托—基板；以及 (b) —接觸表面，包括複數個台面（mesa)’該些台 面包括直接位於一鈦金屬黏結層上方的一類鑽石 1327744
碳材料的一塗覆，該類鑽石碳材料包括：原子組 成為5 0 %〜9 0 %的碳' 5 %〜1 0 %的氫、1 0 %〜 2 0 %的矽以及5 %〜1 0 %的氧；一小於約0.3的 摩擦係數；以及一至少約8 G P a的硬度； 藉此該類鑽石塗覆降低接觸該塗覆之基板的磨耗及污 染。
33.如申請專利範圍第3 2項之基板支撐件，其中該類鑽石 碳材料具有一約1 0 4 0 h m . c m到約1 08 0 h m · c m的 電阻率。 3 4.如申請專利範圍第32項之基板支撐件，其中該類鑽石 碳材料包含由約〇 · 1 a t 〇 m %到約1 0 a t 〇 m %之一金屬添 加物，藉此該金屬添加物改變該塗覆的電阻率。
35.如申請專利範圍第32項之基板支撐件，其中該塗覆之 厚度為約1微米到約20微米。 36.如申請專利範圍第35項之基板支撐件，其中該鈦金屬 黏結層之厚度為約0 · 2 5微米到約4微米。 37.如申請專利範圍第32項之基板支撐件，其中該類鑽石 碳材料包含一類鑽石奈米複合材料 (nanocomposite)，且該類錢石奈米複合材料具有以 63 1327744 下網路：（i)碳及氫，及（ii)矽及氧 3 8.如申請專利範圍第3 2項之基板支撐件，其中該類鑽石 碳材料包含一金屬添加物。 3 9.如申請專利範圍第3 2項之基板支撐件，其中該陶瓷結 構包括A1N或Al2〇3。
40.如申請專利範圍第3 2項之基板支撐件，其中該類鑽石 碳材料係藉由一製程而與一金屬添加物共沉積，該製 程係在一電漿加強化學氣相沉積環境中結合該金屬添 加物的物理氣相沉積。 41. 一種基板支撐件，其包含： (a) 一陶瓷支撐結構，具有一電極嵌設於其中，該電 極係可充電以靜電支托一基板；以及
(b) —接觸表面，包括複數個台面（mesa )，每個該 些台面係實質完全地由下列構成：（i) 一表面塗 覆，包括一類鑽石碳材料，該類鑽石碳材料具有 一碳-氫網路，且其原子組成為 5 0 °/。〜9 0 %的 碳、5 %〜1 0 %的氫、1 0 %〜2 0 %的矽以及5 % 〜10 %的氧，且該表面塗覆包括一小於約0.3的 摩擦係數以及一至少約 8 GPa的硬度；以及（ii) 一黏結層，由金屬組成，且位於該陶瓷支撐結構
64 1327744 與該表面塗覆之間 42.如申請專利範圍第41項之基板支撐件，其中該類鑽石 碳材料包含一類鑽石奈米複合材料，且該類鑽石奈米 複合材料具有以下網路：（i)碳及氫，及（ii)矽及氧。
4 3 ·如申請專利範圍第4 1項之基板支撐件，其中該類鑽石 石炭材料具有一約1 0 4 0 h m . c m到約1 08 0 h m · c m的 電阻率。 44.如申請專利範圍第4 1項之基板支撐件，其中該類鑽石 碳材料包含由約0.1 a t 〇 m %到約1 0 a t 〇 m %之一金屬添 加物，藉此該金屬添加物改變該塗覆的電阻率。
65
TW094105456A 2004-02-24 2005-02-23 Contaminant reducing substrate transport and support system TWI327744B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/786,876 US7824498B2 (en) 2004-02-24 2004-02-24 Coating for reducing contamination of substrates during processing

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TW200540928A TW200540928A (en) 2005-12-16
TWI327744B true TWI327744B (en) 2010-07-21

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US (4) US7824498B2 (zh)
JP (1) JP5270095B2 (zh)
KR (3) KR101400256B1 (zh)
CN (3) CN101393883B (zh)
TW (1) TWI327744B (zh)
WO (1) WO2005083752A2 (zh)

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