517265 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 菸明領域： 本發明是有關於在半導體製程系統中之一種支撐基 材之設備，特別是有關一種於基材吸盤的表面具有保護層 的支撐基材之設備及製造此設備之方法。 發明背景： 在半導體製程系統的反應室中，基材吸盤常用以支撐 基材，而於如物理氣相沉積（PVD)等半導體製程中所採用 的特殊型式吸盤則為陶瓷靜電吸盤。這些吸盤在製程中係 用以固定半導體晶圓或其他的工作元件於固定的位置。在 靜電吸盤中的陶瓷吸盤主體内會包含一個或多個電極，而 陶瓷吸盤主體是由如氮化鋁、氮化硼或氮化鋁中摻雜氧化 金屬，例如氧化欽、氧化路或其他具有相似電阻性質的陶 瓷金屬所製成，這類型的陶瓷材料也可分類為漏介電質 (leaky dielectric)，因為在高溫時這類型的陶堯材料有具 有部份傳導性。 在使用上，由於在電極上施加有吸附電壓，使得晶圓 可被吸附在吸盤主體的支樓表面上’在支撐表面上的晶圓 則會因吸附電壓而產生一個遍佈晶圓的迴路，因此晶圓和 電極是相互偏壓，且透過吸盤主體而互相隔離，所以大小 相等但極性相反的靜電力就將晶圓往支撐表面推擦。 利用陶瓷製造吸盤主體的一個缺點是當經過長時間 使用後支撐表面的特性會轉變。於製程進行中，支撐表面 是曝露在有機物質下，特別是水份和氫氧化合物會附在支 第4頁 本紙張尺度i用中關家標準(21〇 X 297公IT 〜-- (請先閱讀背面之注意事項再填寫本頁) 訂· — ·-------線丨· 517265517265 Printed by A7 B7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of the Invention () Field of the invention: The present invention relates to a device for supporting a substrate in a semiconductor manufacturing system, and more particularly to a substrate sucker Device for supporting a substrate with a protective layer on the surface and method for manufacturing the device. Background of the invention: In the reaction chamber of a semiconductor manufacturing system, substrate suction cups are often used to support substrates, while special types of suction cups used in semiconductor processes such as physical vapor deposition (PVD) are ceramic electrostatic chucks. These suction cups are used to fix semiconductor wafers or other working components in fixed positions during the manufacturing process. The ceramic chuck body in the electrostatic chuck will contain one or more electrodes, and the ceramic chuck body is doped with an oxidized metal such as aluminum oxide, boron nitride, or aluminum nitride, such as oxide, oxide or other Made of ceramic metals with similar resistance properties, this type of ceramic material can also be classified as leaky dielectric, because this type of Tao Yao material is partially conductive at high temperatures. In use, because an adsorption voltage is applied to the electrodes, the wafer can be adsorbed on the branch surface of the chuck body. The wafer on the support surface will generate a loop throughout the wafer due to the adsorption voltage, so The wafer and the electrodes are biased to each other and are isolated from each other by the body of the chuck, so the electrostatic force of the same magnitude but opposite polarity pushes the wafer toward the supporting surface. One disadvantage of using ceramics to make the chuck body is that the characteristics of the support surface change over time. During the process, the supporting surface is exposed to organic matter, especially water and hydroxide will be attached to the branch. Page 4 This paper is in accordance with Zhongguanjia standard (21〇X 297 public IT ~-(Please (Please read the notes on the back before filling in this page) Order · · · ----- Line 丨 · 517265
經濟部智慧財產局員工消費合作社印制农 五、發明說明（） 撐表面。在曰曰圓製程中當晶圓從儲物處送至反應室時，又 或在疋期保養中反應室曝露於空氣時，這些有機物質的污 染物就會進入反應室中。其他的污染源可能是在之前的晶 圓製程步驟中所留下的光阻或旋塗式玻璃覆蓋後的殘餘 物。此外，在加熱過程中反應室中的元件也會產生碳氫化 合物的污染物，例如反應室中的〇型環會被加熱分解。這 些污染物都會互相反應以及在支撐表面形成具有傳導性 質的污染物薄膜。在不斷的製程和保養過程後，於支撐表 面上的/亏染物薄膜會不斷成長而使得吸盤的效率下降。同 樣地，陶瓷基材吸盤雖然多用於低溫製程（如低於 3 0 0°C) ’但污染物薄膜也會於支撐表面形成，當經過長時 間使用後（例如約六個月）吸盤的效率仍然會下降。 陶瓷製造的吸盤主體的另一個缺點是在製造吸盤時 的陶资吸盤之燒結過程中，會導致晶粒在陶瓷材料表面上 產生’而且這些晶粒很容易被拉扯磨擦而掉出，在燒結過 程後’這些陶瓷材料需被拍打以令其表面比較平滑，但此 拍打的動作可能會使得支撐表面產生裂痕及一些依附在 支撐表面或填於支撐表面上的孔中的微粒，這些微粒是難 以從支撐表面上被移除，因此當利用此陶资製造的吸盤 時，裂痕會不斷地製造微粒。此外，當晶圓與支撐表面摩 擦時也會產生微粒，根據經驗上的資料顯示，晶圓在陶瓷 靜電吸盤上停留後，可在晶圓的背面發現幾萬顆污染物微 粒。黏著係數是用以描述從陶瓷:靜電吸盤黏到晶圓的污染 物微粒的特性，當黏著係數越小，則表示被微粒黏附的機 第5頁 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) __________1!9-----.---^--------- (請先閱讀背面之注意事項再填寫本頁) 517265 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 會越小。 而其他的污染物，如晶圓級製程中的排出物（如水份） 都會互相反應或在支撐表面集結而造成額外的污染，雖然 這些排出物並不是主要的污染物，但是在不斷的製程和定 期保養後，這些排出物仍然會與其他的污染物形成具有傳 導性的污染物薄膜，而大大降低了吸盤的效率。因此，吸 盤會漸漸失效，例如吸盤的吸附力會嚴重衰減或不平均， 使得吸盤必需提早更換，因而增加了單位成本和反應室的 停工時間。靜電吸盤也可由其他的材料，如不鏽鋼所製 成’但這些材料仍然會受到同樣的污染物侵害，所以並不 能完全替代陶瓷靜電吸盤。 因此’目前需要一種設備及其製造方法，可將陶瓷吸 盤的支撐表面從反應室環境中隔離，以防止污染物於支撐 表面形成，和保持吸盤的效率以及陶瓷吸盤表面的化學特 性，又可減小陶瓷吸盤的黏著係數。 發明目的及碑沭： 習知設備之缺點’可利用本發明所提供的一種支撐基 材之設備來解決。本發明之支撑基材的設備至少包括位於 支撐表面上的含碳材料之保確Μ 种心保4層，此保護層也可包含有含 碎材料’例如是包含有碳、氧、 紅 、 ^ 夕和虱的合成物，此保護 層的厚度約為^ m至5 〇本 ^月 < 支撐基材的設備也包 括位在保護層上的晶圓空間罩 〜 幕層’此晶圓空間罩幕層更 包括數個支撐元件。此外，支# 牙衣面和靜電吸盤均可由陶 第 6"g* 本纸張尺度_中晒家標準（CNS)A4規格（21Q x 297 ： β-----.---^--------- (請先閱讀背面之注意事項再填寫本頁) 517265 A7 ____ B7 -一， . ------- 五、發明說明（） 竟材料、不鏽鋼、鈦合金或其他的金屬合成物製成。 同時此支撐基材的吸盤之製造方法至少包括形成具 有支樓表面的支撐主體和在支撐主體的支撐表面上沉積 含碳材料以形成保護層’此外更可於此保護層上沉積晶圓 空間罩幕層，而含碳材料也可包含有含矽材料，例如由 礙、氧、碎和氫所組成的合成物。 在吸盤的支撐表面上應用本發明之保護層，可大大減 少吸盤、晶圓和反應室環境的污染物，特別是以往在密封 的反應1：環境中吸盤的支撐表面的污染物，所以污染物就 不能與支撐表面起反應，因此污染物薄膜也不會形成。又 因為減少了靜電吸盤所支撐的基材背面黏著粒子的機會 (例如減少支撐表面的摩擦），所以保護層呈現非常低的黏 著係數’以及此保護層可增加支撐表面的硬度。此外，透 過额外形成的空間罩幕層將晶圓和被保護層覆蓋的支撐 表囬作適當的區隔，更可使得來自於支撐表面的污染物大 幅度減少。另外’本發明之保護層並不會妨礙吸附晶圓的 過程或影響晶圓附著於靜電吸盤時之吸附力。因此，吸盤 的支撐表面、晶圓和反應室的污染物可大幅減少，同時又 保持了吸盤的效率。 圖式簡軍說明： 本發明的較佳實施例將於往後之說明文字中辅以下列圖 形做更詳細的闡述，其中： 第1圖為具有用以支撐半導體晶圓的本發明之保護層的陶 第7頁 (請先閱讀背面之注意事項再填寫本頁) 訂---------線！ 經濟部智慧財產局員工消費合作社印制私 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 297 公 t ) 517265 A7 _B7_ 五、發明說明（） 瓷靜電吸盤之垂直截面圖。 第2圖為在本發明之第二實施例中具有保護層和晶圓空間 罩幕層的陶瓷靜電吸盤之垂直截面圖。 第3圖為製造具有保護層的靜電吸盤之製造方法流程圖。 第4圖為在本發明之第四實施例中具有保護層及金屬主體 的靜電吸盤之垂直截面圖。 第5圖為製造在本發明之第三實施例中具有保護層的靜電 吸盤之製造方法流程圖。 第6圖為在本發明之第三實施例中具有保護層材料之晶圓 空間罩幕層的陶瓷靜電吸盤之垂直截面圖。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 圖號對照說明： 100 保護層 102 支撐表面 104 陶瓷靜電吸盤 106ι 電極 1062 電極 1063 電極 108 吸盤主體 1 10 晶圓空間罩幕層 112 晶圓 114 背面 1 16 回饋線 118 出π 120 通道 122 通道 124 空隙 202 支撐元件 402 間插層 404 保護層 610 晶圓空間罩幕層 第8頁 tt---------線丨· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) 517265 A7 五、發明說明（ 經 濟 部 智 % 財 產 局 員 工 消 費 合 作 社 印 製 贫細說明^ 第1圖所繪示為根據本發明之陶瓷靜電吸盤1〇4的連 直截面圖。此陶走靜電吸盤係用以在製程反應室中固定承 支撐基材，如半導體晶圓。在製程反應室中對基材進行不 同的製程步驟’例如物理氣相沉積或化學氣相沉積、姓 刻、研磨或其他的製程以製造積體電路m圖中，陶 走靜電…〇4的支撐表面上形成有保護層1〇〇,而為了 說明本發明的應用’在第丨圖中亦緣示出以陶㈣電吸盤 1〇4承載的半導體晶圓丨12。 本發明的特點在於保護層⑽是由-種不同於支撑表 面材料之性質的材料所_ & ^ π , 斤I成，而且此性質的材料不會受到 製程反應的影響1時也不會與冷染物起作用，因此可以 =料薄膜在陶资吸盤上形成。由於保護層⑽覆蓋於 陶^電吸盤1G4的支撑表自所以在製程反應室 的環境中支撐表面1 〇2得以密_ 心 1〇“…” 于“封"^離，而且陶資靜電吸盤 的…面102也不會與晶圓⑴的背面m接觸。 罘2圖為本發明之第-杂 μ 弟1施例，在陶t；靜電吸盤104 上的曰曰圓2間罩幕層110是形成於保護層1〇 圓空間罩幕層丨1G亦包括有數 D 0、晶 支撑晶圓一使得晶圓⑴與陶，靜= 護層100和支撑表面102之間有空 | 上的保 -實施例中支撐元件202是形成 :在:發明之另 獨立的支撐元件202也可以形成於支撐=上。另外， 護層⑽則覆蓋在支撐元件2 2上’而保 卫猎支轉元件202的形 第9頁 ,·II------ (請先閲讀背面之注意事項再填寫本頁) 線ίPrinted by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description () Support the surface. When the wafer is sent from the storage to the reaction chamber during the round process, or when the reaction chamber is exposed to air during the maintenance period, these organic pollutants will enter the reaction chamber. Other sources of contamination may be photoresist or spin-on glass-covered residue left over from previous wafer processing steps. In addition, during the heating process, the components in the reaction chamber will also generate hydrocarbon contamination, such as the O-ring in the reaction chamber will be decomposed by heating. These pollutants all react with each other and form a conductive pollutant film on the support surface. After continuous manufacturing and maintenance processes, the / defective film on the supporting surface will continue to grow and the efficiency of the suction cup will decrease. Similarly, although ceramic-based suction cups are mostly used in low-temperature processes (such as below 300 ° C), pollutant films will also form on the support surface. The efficiency of the suction cups after a long period of use (for example, about six months) Will still fall. Another disadvantage of the ceramic suction cup body is that during the sintering process of the ceramic suction cup during the manufacturing of the suction cup, crystal grains will be generated on the surface of the ceramic material. Moreover, these crystal grains are easily pulled out and rubbed out during the sintering process These ceramic materials need to be beaten to make the surface smooth, but the action of this beat may cause cracks on the support surface and some particles attached to the support surface or holes filled in the support surface. These particles are difficult to remove The support surface is removed, so when using this ceramic-made suction cup, cracks will continue to produce particles. In addition, particles are also generated when the wafer and the support surface are rubbed. According to empirical data, after the wafer stays on the ceramic electrostatic chuck, tens of thousands of contaminant particles can be found on the back of the wafer. Adhesion coefficient is used to describe the characteristics of pollutant particles adhered to the wafer from ceramics: electrostatic chucks. When the adhesion coefficient is smaller, it means that the particles are adhered to the machine. Page 5 This paper applies Chinese National Standard (CNS) A4 Specifications (210 X 297 male t) __________1! 9 -----.--- ^ --------- (Please read the notes on the back before filling out this page) 517265 A7 B7 Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 5. Invention Description (the smaller it will be. And other pollutants, such as effluents from wafer-level processes (such as water), will react with each other or build up on the support surface to cause additional pollution, although These discharges are not the main pollutants, but after continuous process and regular maintenance, these discharges will still form a conductive pollutant film with other pollutants, which greatly reduces the efficiency of the suction cup. Therefore, the suction cup It will gradually fail, for example, the suction force of the suction cup will be seriously attenuated or uneven, so that the suction cup must be replaced early, which increases the unit cost and downtime of the reaction chamber. The electrostatic suction cup can also be made of other materials, such as Made of rusted steel, 'but these materials will still be attacked by the same pollutants, so they cannot completely replace ceramic electrostatic chucks. Therefore, there is currently a need for a device and a manufacturing method that can remove the supporting surface of ceramic chucks from the reaction chamber environment Isolation to prevent the formation of contaminants on the support surface, and to maintain the efficiency of the chuck and the chemical characteristics of the surface of the ceramic chuck, while reducing the adhesion coefficient of the ceramic chuck. Objects and Tablets of the Invention: Disadvantages of the conventional device 'can use the present invention A device for supporting a substrate is provided to solve the problem. The device for supporting a substrate of the present invention includes at least 4 layers of carbon M materials and carbon materials on the support surface, and the protective layer may also include broken materials. 'For example, it is a composite containing carbon, oxygen, red, yellow, and lice, and the thickness of this protective layer is about ^ m to 50. This month < The device supporting the substrate also includes a crystal on the protective layer. Round space cover ~ curtain layer 'This wafer space cover curtain layer also includes several supporting elements. In addition, the ## dental clothing surface and the electrostatic chuck can be made of Tao 6 " g * paper Degree_CNS Standard A4 (21Q x 297: β -----.--- ^ --------- (Please read the precautions on the back before filling this page) 517265 A7 ____ B7-I.. ------- 5. Description of the invention () Made of materials, stainless steel, titanium alloy or other metal composites. At the same time, the manufacturing method of the suction cup supporting the substrate includes at least forming The supporting body on the surface of the supporting building and depositing a carbon-containing material on the supporting surface of the supporting body to form a protective layer. In addition, a wafer space cover layer can be deposited on the protective layer, and the carbon-containing material may also include a silicon-containing material. , Such as a composition consisting of obstruction, oxygen, fragmentation and hydrogen. Applying the protective layer of the present invention to the support surface of the chuck can greatly reduce the pollutants in the environment of the chuck, the wafer and the reaction chamber, especially in the conventional sealed reaction 1: the pollutants on the support surface of the chuck in the environment, so It does not react with the support surface, so a thin film of contaminants is not formed. And because the chance of sticking particles to the back of the substrate supported by the electrostatic chuck is reduced (such as reducing friction on the support surface), the protective layer exhibits a very low adhesion coefficient 'and this protective layer can increase the hardness of the support surface. In addition, the additional separation of the wafer and the supporting surface covered by the protective layer through the additional space cover layer can further reduce the pollutants from the supporting surface. In addition, the protection layer of the present invention does not hinder the process of adsorbing the wafer or affect the adsorption force of the wafer when it is attached to the electrostatic chuck. As a result, contaminants on the support surface, wafers, and reaction chambers of the chuck can be significantly reduced while maintaining the efficiency of the chuck. Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following figures, where: Figure 1 is a protective layer of the present invention with a semiconductor wafer Tao page 7 (Please read the precautions on the back before filling this page) Order --------- line! Printed privately by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is in accordance with Chinese National Standard (CNS) A4 (21〇 297 g t) 517265 A7 _B7_ V. Description of the invention () Vertical sectional view of porcelain electrostatic chuck. Fig. 2 is a vertical sectional view of a ceramic electrostatic chuck having a protective layer and a wafer space cover layer in a second embodiment of the present invention. FIG. 3 is a flowchart of a manufacturing method for manufacturing an electrostatic chuck with a protective layer. Fig. 4 is a vertical sectional view of an electrostatic chuck having a protective layer and a metal body in a fourth embodiment of the present invention. Fig. 5 is a flowchart of a method of manufacturing an electrostatic chuck having a protective layer in a third embodiment of the present invention. FIG. 6 is a vertical cross-sectional view of a ceramic electrostatic chuck having a protective layer of a wafer space cover layer in a third embodiment of the present invention. (Please read the precautions on the back before filling this page.) Printed reference number printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: 100 Protective layer 102 Supporting surface 104 Ceramic electrostatic chuck 106ι Electrode 1062 Electrode 1063 Electrode 108 Sucker body 1 10 crystals Circular space cover curtain layer 112 Wafer 114 Back side 1 16 Feedback line 118 Out π 120 Channel 122 Channel 124 Gap 202 Support element 402 Interlayer 404 Protective layer 610 Wafer space cover layer Page 8 tt ------ --- Line 丨 · This paper size applies to China National Standard (CNS) A4 (210 X 297 g) 517265 A7 V. Description of the invention (Ministry of Economy, Intellectual Property Bureau, Employees Cooperative Cooperative, Printed Poverty Details ^ Figure 1 Illustrated is a straight cross-sectional view of a ceramic electrostatic chuck 104 according to the present invention. This ceramic electrostatic chuck is used to fix a supporting substrate, such as a semiconductor wafer, in a process reaction chamber. The substrate is subjected to different process steps, such as physical vapor deposition or chemical vapor deposition, engraving, grinding, or other processes to produce integrated circuit m. A protective layer 100 is formed on the supporting surface of 〇〇4, and to illustrate the application of the present invention, a semiconductor wafer carried by a ceramic chuck 104 is also shown in the figure. The present invention The characteristic is that the protective layer ⑽ is made of a material that is different from the nature of the supporting surface material _ & ^ π, jin I, and the material of this nature will not be affected by the process reaction. Function, so it can be formed on the ceramic suction cup. Since the protective layer ⑽ covers the ceramic chuck 1G4 support table, the supporting surface 1 〇2 is dense_ 心 1〇 in the environment of the process reaction chamber. … "In" Seal ", and the ... surface 102 of the ceramic electrostatic chuck will not be in contact with the back surface m of the wafer. Figure 2 is the first embodiment of the present invention. ; The two round cover screens 110 on the electrostatic chuck 104 are formed on the protective layer 10 round space cover screens. 1G also includes the number D 0, and the wafer supports the wafer. There is a space between the layer 100 and the support surface 102. The support element 202 in the above embodiment is formed: in: It is clear that another independent support element 202 can also be formed on the support =. In addition, the protective layer 覆盖 is covered on the support element 22, and the shape of the hunting and support element 202 is protected. (Please read the notes on the back before filling this page)
本紙張5適T?關家標準（CNS)A4 (21GThis paper is 5 to T? House Standard (CNS) A4 (21G
517265 A7 B7 五、發明說明（） 成以定義出保護層100。而有關包含晶圓空間罩幕層的陶 瓷靜電吸盤可參考於1997年8月12曰所公告的美國專利 編號第5，6 5 6，0 9 3號的專利案。在此專利案中’用作支撐 元件的金屬材料是以物理氣相沉積的方法直接在靜電吸 盤的支撐表面形成，又或可採用化學氣相沉積（熱式或加 強型電漿式）、電漿濺鍍沉積和火焰喷焊沉積等方法。同 樣地，這些製程方法也可以用以沉積支撐元件202於本發 明之保護層100上。 在第6圖中所繪示為本發明之第三實施例，其中晶圓 空間罩幕層610是形成於陶瓷靜電吸盤104的支撐表面 1 02上。此晶圓空間罩幕層6 1 〇跟美國專利前案中的空間 罩幕層相似，但數個獨立的支撐元件202是由製造前述的 實施例之保護層1 〇 〇的相同材料所製造的，詳細說明可見 於後述說明中。 一般而s ’靜電吸盤會包含内嵌在陶资的吸盤主體 108的一個或多個電極1〇6。在吸盤主體1〇8中電極1〇6 係視所在的位置及製造電極和電源連接的材料的不同而 產生不同的功用，而每一個電極是透過電性的回饋線n 6 來連接至電源（未繪示）。此電性的回饋線資料可參考丨9 9 7 年4月1曰的美國專利申請案第〇8/834,7〇2號。在第1圖 中繪示出一個雙極性吸附電極配置，而另一實施例則可見 於第2圖和第6圖中，詳細說明如下。一對電極（丨〇6l和 1 0 62)被施以大小相同而極性相反的偏壓以靜電吸附力將 晶圓1 1 2固定在陶瓷靜電吸盤丨〇4上。不過，雖然在第2 第10頁 本纸張尺度適用“國家標準（CNS)A4規格（2lGx 297公餐) ---- (請先閱讀背面之注意事項再填寫本頁) 訂---------線丨 經濟部智慧財產局員工消費合作社印製 517265 五 經濟部智慧財產局員工消費合作社印製 A7 __— _B7 、發明說明（1 圖和第6圖中繪示出一對雙極性電極的配置，但泰 . 、 电極的配 置並不限定於單極性、雙極性、帶狀雙極性（超過〜 組的 雙極性電極）等，而可以任何的配置方式實施， 冬到將晶 圓固足於支撐表面的目的。此外電極也可有各種 二 ^狀’如 圓形和父又形等。電極丨O63作為電阻元件以提升陶瓷靜㊉ 吸盤1 04和晶圓丨丨2的溫度。 陶瓷的吸盤主體108可以氮化鋁或氮化硼所製成’這 些漏介電質材料在高溫製程中對半導體晶圓提供了高= 附力，而其他漏介電質材料（如擁有低電阻率），如鋁中摻 雜氧化欽或氧化絡，也可用以製成高溫的吸盤材料。若吸 盤是在低溫製程中使用，則可利用其他陶瓷或介電材質如 氧化銘等製成。 為了促進晶圓1 1 2至吸盤主體丨〇 8的熱傳導，可於晶 圓1 1 2的背面1 1 4和保護層i 00或晶圓空間罩幕層6丨〇之 間的空隙124注入的熱傳導介質（如氬氣等），這熱偶合傳 導技術疋視特殊的製程而用以加熱或冷凍晶圓。熱傳導介 質可透過吸盤主體108和保護層1〇〇或晶圓空間罩幕層 610等經出口 118送至晶圓112的背面114。一般此介質 是由介質源（未繪示）以約2Sccm至3sccm的流量送至晶圓 112的背面114。此背面冷卻方法可見於1993年7月20 日所公告的美國專利案第5,228,5〇1號中。 在陶瓷靜電吸盤1 0 4中的多個熱傳導介質分佈通道是 用以幫助熱傳導介質的分佈遍及整個晶圓1 1 2的背面 1 1 4。此多個熱傳導介質分佈通道一般會被吸盤彡體1 〇8 第11頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） ：----------訂·-------- (請先閱讀背面之注意事項再填寫本頁) 517265 A7 五、發明說明（ 的支撐表面1G2所分開，由於保護層i⑽覆蓋在支撐表面 102上，所以就會在保護層100中產生數個通道122。 在覆蓋保護層100前，陶资靜電吸盤104需經過電聚 或喷賤蚀刻製程的清洗，然I 一般採用I有含石夕材料的含 破微合成物以加強型f装化I氣相沉積的方法，於吸盤主 體108的支撐表面102Λ沉積保護層1〇〇,又或可採用熱 式化學氣相/儿積的方法代替加強型電漿化學氣相沉積的 方法。此保護層100形成一種碳晶格結構（跟鑽石的晶格 結構相似），此種碳晶格結構具有高機械強度、抗化學性 和抗電性崩冑，而切材料則對保護層Μ 了貫徹整個陶 資靜電吸盤104之工作温度範圍（一般是由室溫至約55〇。〇 的穩定電阻率特性。其中一種適合作為保護層的材料為一 種叫DLN的蛟矽合成物材料。DLN是由位於紐約的 之高級抗阻技術公司所販賣。保護層i 〇〇也可應用其他的 沉積方法如濺鍍或火焰噴焊沉積等方法，平均地沉積在第 1圖和第2圖 < 實施例中的吸盤主體i 〇8的支撐表面^ 〇2 上，而在^ 6圖中也可利用透過模版的沉積方法來形成晶 圓空間罩幕層。跟吸盤的支撐表面材料相& ,保護層(或 晶圓2間罩幕層）的材料具有高非反應的特性，此種具有 高非反應特性的材料在真空環境中（如在使用陶瓷靜電吸 盤1 04的製私反應室中）保持穩定，以及可防止支撐表面 1 02在大氣環境中吸附污染物或與污染物起反應。此外， 跟支撐表面的材料相比，此保護層的材料可以減低磨擦及 增加順滑度因而可減少微粒的產生。在製造第2圖中之靜 第12頁 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐y (請先閱讀背面之注意事項再填寫本頁) 訂---------#丨丨“ 經濟部智慧財產局員工消費合作社印製 517265 A7 B7 五、發明說明（ 經 濟 部 智 慧 財 產 局 費 合 社 印 製 電吸盤時，當於支撐表面1 02上覆蓋保護層1 00後，晶圓 空間罩幕層的支撐元件則覆蓋在保護層1 〇〇上。 當利用上述之DLN材料作為保護層100的材料時， 此保護層的厚度约為1 μπα至5 μιη。由於DLN材料的保護 層並不需要燒結過程，因此沒有裂缝或洞孔產生，而且當 支撐表面經過保護層的覆蓋後就不會與碳氫化合物或其 他的污染物起反應。此保護層的厚度亦不會影響或減小吸 附力以及促進支撐表面102的通道120上的覆蓋層。例 如，在利用 Johnsen-Rahbek效應的吸盤中，由於受電極 106之間的電位差影響，電荷會在吸盤主體1〇8中的漏介 質材料飄移，電荷亦會根據保護層丨00的電阻率而在保護 層100中飄移，因此在晶圓112的背面114之接觸面中形 成漏電流。一般而言保護層的電阻率約為1〇8Ω. cm至 Ω · cm或更高以達到需求。此電阻率的大小可視所需而 經由分離式傳導性金屬濺鍍步驟改變。此濺鍍步驟是將具 有傳導性的金屬（如鋁或鈦等）濺鍍進保護層1〇〇以改變保 護層100的電阻率。在本發明之圖示中需要注意的是保護 層100和通道120的範圍是經過放大以易於觀察。一般而 言在吸盤主體1G8中的通道12G大約$，如上述的 保4層100的厚度約為1μιη至5_，所以當保護層的厚度 在最薄的時候（約5GA)時，通道的厚度約為保護層1〇〇的 厚度5χ105倍。 在第3圖中所！會示為製造具有保護層1〇〇的陶资靜電 吸盤104之製造方法流程圖。在製作流程3〇〇中，步驟如 12 (請先閱讀背面之注意事項再填寫本頁) 訂---------線 第13頁 517265 經濟部智慧財產局員工消費合作社印制π Α7 Β7 五、發明說明（） 至步驟304間是形成吸盤主體1〇8及吸盤主體1〇8内的回 鑽線1 1 6。一般而言吸盤主體包括數個未修整和隔離的材 料層，如未經燒結、綠色狀態的氮化鋁。此材料層是互相 重疊且間插傳導金屬以形成内嵌式電極，而回饋線的孔洞 疋貝穿所需的隔離層而與傳導性金屬連接且以傳導性金 屬填滿，在燒結後則會形成金屬化的回饋線。在步驟3〇6 中’未燒結的材料會經過燒結，如經由高溫高壓以形成經 過修整的固感吸盤主體。在步驟3 〇 8中，於靜電吸盤上提 供如前述之保護層。可利用化學氣相沉積方法於吸盤主體 的表面形成含碳薄膜，此薄膜的較佳厚度約為丨μιη至 5 μιη。在步驟310中具有保護層之靜電吸盤完整形成，可 置入製程反應室中應用。 第4圖所繪示為根據本發明之第四實施例的具有保護 層404的陶瓷靜電吸盤1〇4之垂直截面圖。在此實施例中 吸盤主體108是由耐用的材料，如選自於由不鏞綱、鈦合 金及碳化鋁矽和碳化鈦矽的合成金屬材料等所組成的一 族群所製成。間插層4 0 2係形成於吸盤主體1 〇 8的表面1 0 2 上。間插層4 0 2是標準的介電質材料或如第1圖的保護層 1 00之绩石型奈合成物材料（如DLN材料）。形成在間插層 402上的一個或多個電極1〇6是適當地連接至和吸盤主體 1 〇 8隔離並延伸整個吸盤主體1 〇 8的回饋線。此回饋線一 般是以習知技術如鑽孔或雷射切割的方式形成，若採用合 成金屬材料’則在形成回讀線前需在合成金屬材料中預留 2間以讓回饋線插入。保護層4 0 4是形成於電極1 q 6上（和 第14頁 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) ----------------------^--------- (請先閱讀背面之注意事項再填寫本頁) 517265 經 濟 部 智 % 財 產 局 員 工 消 費 合 η 社 印 製 第15頁 Α7 Β7 五、發明說明（） 間插層402的曝露位置上）以完全密封吸盤主體的支 撐表面102 ^此保護層可由鑽石型奈合成物材料（如dln 材料）製成。 第5圖係繪示形成陶瓷靜電吸盤1 〇4的另—種方法之 流程圖。製作流程500係從步驟502開始一直至步驟5〇4， 其中吸盤主體108是由具有適當接線作為電回饋線的平台 之耐用金屬（如不鏽鋼平台）所製成。步騾506是於吸盤主 體上形成隔離材料以形成間插層，此隔離材料包括前述之 保護層的材料（如含碳薄膜）。在步驟5〇8中，則是於隔離 薄膜（間插層）上採用金屬沉積步驟沉積一個或數個電極， 又或可利用其他於支撐基材設備的製造方法中習知技術 來形成，而不限定於物理氣相沉積、化學氣相沉積和電鍍 等方法。在步驟508中，金屬電極係曝露於吸盤主體的上 方。在步驟510中，則是於靜電吸盤的曝露部份上覆蓋前 述之保護層，例如利用化學氣相沉積方法在電極和吸盤主 體上形成含碳薄膜，此含碳薄膜的較佳厚度約^ _至 μ在步騍5 1 2中，具有保護層之靜電吸盤則是完整形 成’可置入製程反應室中以便應用。 於吸盤的支撐表面應用本發明之保護$，可大幅減少 吸盤、晶圓和製程反應室環境中之冷染物，及可減少支撐 表面的磨損和降低黏著係數因而可減少晶圓背面的2 粒，而形成傳導薄膜的污染物也大大減少，因此可省略清 洗支撐表面的步驟（例如濺鍍蚀刻步驟或其他保養步驟）7 所以因保養維修及重新設定的停工時間亦可減少。而最重 本紙張尺⑥用規烙(2Κ) X 29?Ρ^ (請先閱讀背面之注意事項再填寫本頁) flu n n n n n n 一 I ill 1 -I n m flu n n I ma— m 517265 A7 B7_ 五、發明說明（） 要的是保護層雖然提供了上述的優點，但並不會影響將晶 圓固定於靜電吸盤上的吸附力和吸附過程。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 (請先閱讀背面之注意事項再填冩本頁) 丨—訂---------線丨r 經濟部智慧財產局員工消費合作社印製 第16頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公f )517265 A7 B7 V. Description of the invention () to define the protective layer 100. For ceramic electrostatic chucks including a curtain layer of a wafer space, reference may be made to the U.S. Patent No. 5,6 5 6, 0 93 published on August 12, 1997. In this patent, the metal material used as the support element is formed directly on the support surface of the electrostatic chuck by physical vapor deposition, or chemical vapor deposition (thermal or reinforced plasma), electrical Plasma sputter deposition and flame spray deposition. Similarly, these process methods can also be used to deposit the support element 202 on the protective layer 100 of the present invention. FIG. 6 shows a third embodiment of the present invention, in which the wafer space cover curtain layer 610 is formed on the supporting surface 102 of the ceramic electrostatic chuck 104. This wafer space cover layer 6 1 0 is similar to the space cover layer in the pre-patent of the United States, but several independent supporting elements 202 are made of the same material as the protective layer 100 of the foregoing embodiment. The detailed description can be found in the following description. Generally, the s' electrostatic chuck will include one or more electrodes 106 embedded in the ceramic chuck body 108. The electrode 106 in the sucker body 108 generates different functions depending on the location and the material used to make the connection between the electrode and the power supply. Each electrode is connected to the power supply through an electrical feedback line n 6 ( (Not shown). For information about this electrical feedback line, refer to US Patent Application No. 08 / 834,702, dated April 1, 1997. A bipolar adsorption electrode configuration is shown in Fig. 1, and another embodiment can be seen in Figs. 2 and 6, which are described in detail below. A pair of electrodes (1061 and 1062) were biased with the same size and opposite polarity to fix the wafer 1 12 to the ceramic electrostatic chuck with electrostatic attraction. However, although the paper standards on page 2 and page 10 apply to the "National Standard (CNS) A4 Specification (2lGx 297 Meals)) ---- (Please read the precautions on the back before filling this page) Order ---- ----- Line 丨 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 517265 Five printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ___ _B7 、 Explanation (1 and 6) The configuration of the polar electrode, but the configuration of the electrode is not limited to unipolar, bipolar, ribbon bipolar (more than ~ group of bipolar electrodes), etc., and can be implemented in any configuration. The circle is fixed for the purpose of supporting the surface. In addition, the electrode can also have various shapes such as circle and parent shape. The electrode 丨 O63 is used as a resistance element to increase the temperature of the ceramic chuck 10 04 and the wafer 丨 2 The ceramic chuck body 108 can be made of aluminum nitride or boron nitride. 'These leaky dielectric materials provide high = adhesion to semiconductor wafers in high temperature processes, while other leaky dielectric materials (such as having low Resistivity), such as doped oxide or oxide complex in aluminum It can also be used to make high-temperature chuck materials. If the chuck is used in a low-temperature process, it can be made of other ceramics or dielectric materials such as oxidized metal. In order to promote the thermal conduction of the wafer 1 12 to the chuck body 丨 〇8 A thermally conductive medium (such as argon) can be injected into the gap 124 between the back surface 1 1 4 of the wafer 1 12 and the protective layer i 00 or the wafer space cover 6 6. This thermal coupling conduction technology 传导Depending on the special process, it is used to heat or freeze the wafer. The thermally conductive medium can be sent to the back 114 of the wafer 112 through the outlet 118 through the suction cup body 108 and the protective layer 100 or the wafer space cover layer 610, etc. Generally this medium It is sent from the medium source (not shown) to the back surface 114 of the wafer 112 at a flow rate of about 2 sccm to 3 sccm. This back surface cooling method can be found in US Patent No. 5,228,501 issued on July 20, 1993. In the ceramic electrostatic chuck 104, a plurality of heat conductive medium distribution channels are used to help the distribution of the heat conductive medium throughout the back surface of the wafer 1 1 2. The plurality of heat conductive medium distribution channels are generally sucked by the chuck. Body 1 〇8 Page 11 of this paper Applicable to China National Standard (CNS) A4 specifications (210 X 297 meals): ---------- Order · -------- (Please read the precautions on the back before filling this page 517265 A7 V. Description of the invention (The support surface 1G2 is separated. Since the protective layer i⑽ is covered on the support surface 102, several channels 122 will be generated in the protective layer 100. Before covering the protective layer 100, ceramic materials will be static. The suction cup 104 needs to be cleaned by an electropolymerization or spray etching process. However, generally, a broken micro-composite containing a stone-containing material is used to enhance the f-packing and chemical vapor deposition methods on the supporting surface of the suction cup body 108. 102Λ deposits a protective layer 100, or a thermal chemical vapor phase / child product method can be used instead of the enhanced plasma chemical vapor deposition method. The protective layer 100 forms a carbon lattice structure (similar to the diamond lattice structure). This carbon lattice structure has high mechanical strength, chemical resistance and electrical resistance. Throughout the entire operating temperature range of ceramic electrostatic chuck 104 (usually from room temperature to about 55.0%). One of the materials suitable for the protective layer is a silicon-silicon composite material called DLN. DLN is Sold by New York-based Advanced Impedance Technology Company. The protective layer 〇〇 can also be applied by other deposition methods such as sputtering or flame spray deposition, evenly deposited on Figures 1 and 2 < Implementation In the example, the support surface of the suction cup body i 〇8 is on the support surface ^ 〇2, and in the figure ^ 6, the wafer space cover curtain layer can also be formed by a stencil deposition method. It is related to the support surface material of the suction cup & The material of the layer (or the cover layer of the 2 wafers) has high non-reactive characteristics. This kind of material with high non-reactive characteristics is maintained in a vacuum environment (such as a private reaction chamber using a ceramic electrostatic chuck 104). stable, And can prevent the support surface 102 from adsorbing or reacting with pollutants in the atmospheric environment. In addition, compared with the material of the support surface, the material of this protective layer can reduce friction and increase smoothness, thereby reducing particle generation. .In the manufacture of the second picture, page 12 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public meals (please read the precautions on the back before filling this page). Order ---- ----- # 丨 丨 “Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 517265 A7 B7 V. Description of the invention (When the electric suction cups are printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, the electric suction cups are covered on the support surface 102 After the layer 100, the supporting elements of the wafer space cover layer are covered on the protective layer 100. When the above-mentioned DLN material is used as the material of the protective layer 100, the thickness of the protective layer is about 1 μπα to 5 μιη Since the protective layer of the DLN material does not require a sintering process, there are no cracks or holes, and after the support surface is covered by the protective layer, it will not react with hydrocarbons or other pollutants. This The thickness of the protective layer also does not affect or reduce the adsorption force and promote the covering on the channel 120 of the support surface 102. For example, in a suction cup using the Johnsen-Rahbek effect, the charge will be affected by the potential difference between the electrodes 106 The leakage medium material in the chuck body 108 drifts, and the charge will also drift in the protection layer 100 according to the resistivity of the protection layer 00, so a leakage current is formed in the contact surface of the back surface 114 of the wafer 112. Generally, The resistivity of the protective layer is about 108 Ω · cm to Ω · cm or higher to meet the demand. The magnitude of this resistivity can be changed through a separate conductive metal sputtering step as required. In this sputtering step, a conductive metal (such as aluminum or titanium) is sputtered into the protective layer 100 to change the resistivity of the protective layer 100. It should be noted in the illustration of the present invention that the ranges of the protective layer 100 and the channel 120 are enlarged for easy observation. Generally speaking, the channel 12G in the sucker body 1G8 is about $. As described above, the thickness of the 4 layer 100 is about 1 μm to 5 mm, so when the thickness of the protective layer is the thinnest (about 5 GA), the thickness of the channel is about It is 5 × 105 times the thickness of the protective layer 100. In Figure 3! It will be shown a flowchart of a manufacturing method for manufacturing a ceramic electrostatic chuck 104 with a protective layer 100. In the production process 300, the steps are as 12 (please read the precautions on the back before filling this page) Order --------- line Page 13 517265 Printed by the Consumer Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention () Step 304 to step 304 is to form the chuck body 108 and the back drill line 1 1 6 in the chuck body 108. Generally speaking, the chuck body consists of several untrimmed and isolated layers of material, such as unsintered, green aluminum nitride. This material layer overlaps each other and interposes conductive metal to form an embedded electrode, and the holes of the feedback line penetrate the required isolation layer to connect with the conductive metal and fill it with conductive metal. After sintering, Form metallized feedback lines. In step 306, the 'unsintered material' is sintered, for example, by high temperature and high pressure to form a trimmed solid susceptor body. In step 308, a protective layer as described above is provided on the electrostatic chuck. A carbon-containing film can be formed on the surface of the chuck body by a chemical vapor deposition method, and a preferred thickness of the film is about 1-5 μm. In step 310, the electrostatic chuck with a protective layer is completely formed and can be put into a process reaction chamber for application. FIG. 4 is a vertical sectional view of a ceramic electrostatic chuck 10 with a protective layer 404 according to a fourth embodiment of the present invention. In this embodiment, the chuck body 108 is made of a durable material, such as a group selected from the group consisting of stainless steel, titanium alloy, and synthetic metal materials such as aluminum silicon carbide and titanium silicon carbide. The intervening layer 40 2 is formed on the surface 10 2 of the suction cup body 108. The interlayer 4 0 2 is a standard dielectric material or a protective layer 100 as shown in FIG. 1, and is a stone-type nano composite material (such as a DLN material). One or more electrodes 106 formed on the intervening layer 402 are appropriately connected to a feedback line that isolates and extends the entire suction cup body 108 from the suction cup body 108. This feedback line is generally formed by a conventional technique such as drilling or laser cutting. If a synthetic metal material is used, two spaces must be reserved in the synthetic metal material for the feedback line to be inserted before forming the readback line. The protective layer 4 0 4 is formed on the electrode 1 q 6 (and the paper size on page 14 applies the Chinese National Standard (CNS) A4 specification (210 X 297 g t) ------------ ---------- ^ --------- (Please read the precautions on the back before filling out this page) 517265 Intellectual Property of the Ministry of Economic Affairs Employee Consumption Co., Ltd. Page 15 Α7 Β7 V. Description of the invention () (at the exposed position of the interlayer 402) to completely seal the support surface 102 of the chuck body ^ This protective layer may be made of diamond-type nano-composite material (such as dln material). Fig. 5 is a flowchart showing another method for forming the ceramic electrostatic chuck 104. The manufacturing process 500 starts from step 502 and continues to step 504. The suction cup body 108 is made of a durable metal (such as a stainless steel platform) with a platform with appropriate wiring as an electric feedback line. Step 506 is to form an isolation material on the body of the chuck to form an intervening layer. The isolation material includes the aforementioned protective layer material (such as a carbon-containing film). In step 508, a metal deposition step is used to deposit one or several electrodes on the isolation film (intercalation layer), or it can be formed using other techniques known in the manufacturing method of supporting substrate equipment, and It is not limited to methods such as physical vapor deposition, chemical vapor deposition, and electroplating. In step 508, the metal electrode is exposed above the chuck body. In step 510, the exposed portion of the electrostatic chuck is covered with the aforementioned protective layer. For example, a chemical vapor deposition method is used to form a carbon-containing film on the electrode and the body of the chuck. The preferred thickness of the carbon-containing film is about ^ _ To μ In step 5 1 2, the electrostatic chuck with a protective layer is completely formed and can be placed in a process reaction chamber for application. Applying the protection of the present invention to the support surface of the chuck can greatly reduce cold dyes in the environment of the chuck, wafer and process reaction chamber, and can reduce the wear on the support surface and reduce the adhesion coefficient, thereby reducing the number of 2 particles on the back of the wafer. Contaminants that form the conductive film are also greatly reduced, so the step of cleaning the support surface (such as a sputtering etch step or other maintenance steps) can be omitted. Therefore, downtime due to maintenance and resetting can also be reduced. The heaviest paper ruler (6) X 29? Ρ ^ (Please read the precautions on the back before filling in this page) flu nnnnnn I I ill 1 -I nm flu nn I ma— m 517265 A7 B7_ 5 Explanation of the invention () It is important that although the protective layer provides the above advantages, it does not affect the adsorption force and the adsorption process of the wafer fixed on the electrostatic chuck. As will be understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention Effective changes or modifications should be included in the scope of patent application described below. (Please read the precautions on the back before filling this page) 丨 —Order --------- line 丨 r Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Page 16 This paper size applies Chinese national standards ( CNS) A4 size (210 x 297 male f)