JP5289307B2 - 基板ホルダーによる金属汚染を防止する方法 - Google Patents
基板ホルダーによる金属汚染を防止する方法 Download PDFInfo
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- JP5289307B2 JP5289307B2 JP2009512605A JP2009512605A JP5289307B2 JP 5289307 B2 JP5289307 B2 JP 5289307B2 JP 2009512605 A JP2009512605 A JP 2009512605A JP 2009512605 A JP2009512605 A JP 2009512605A JP 5289307 B2 JP5289307 B2 JP 5289307B2
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- carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Description
基板を提供するステップであって、前記基板を伝導性であり、金属非含有であり、かつ、親水性の炭素系被覆で少なくとも部分的に被覆し、前記炭素系被覆が、窒素でドープされ、108ohm−cm未満の電気抵抗率を有するステップと、
前記基板を脱イオン水で洗浄するステップと
を含む。
少なくとも1つの電極11と、
電極11を少なくとも部分的に覆う誘電体12と、
誘電体12を少なくとも部分的に覆う金属非含有伝導性炭素系被覆13とを含む。
Claims (11)
- 伝導性であり、金属非含有であり、かつ親水性の炭素系被覆(13)を少なくとも部分的に基板(14、24)に設けることにより基板(14、24)の湿潤性を向上させる方法であって、前記炭素系被覆(13)が、窒素でドープされており、かつ、108ohm−cm未満の電気抵抗率を有し、前記基板が、半導体基板を輸送および/または支持する部品、半導体のパターニングおよびリソグラフィに使用される液体を輸送および/または支持する部品、複写機の部品、ならびに放電加工(EDM)用途に使用される部品からなる群より選択され、
前記炭素系被覆(13)を適用する前に、前記基板(14、24)上に接着促進層を適用し、前記接着促進層が1つ又は複数の層を含み、この1つ又は複数の層が、周期表のIVB族の元素、VB族の元素、VIB族の元素からなる群から選ばれる金属の炭化物、窒化物または炭窒化物の層である方法。 - 前記炭素系被覆(13)が0.1〜20at%の間の窒素を含む請求項1に記載の方法。
- 前記炭素系被覆(13)は、窒素がドープされたダイヤモンド様炭素(DLC)被覆を含み、前記ダイヤモンド様炭素被覆は、非晶質水素化炭素(a−C:H)を含む請求項1又は2に記載の方法。
- 前記炭素系被覆(13)が、窒素がドープされたダイヤモンド様ナノコンポジット(DLN)被覆を含み、前記ダイヤモンド様ナノコンポジット被覆が、C、H、O、およびSiを含む請求項1又は2に記載の方法。
- 前記ダイヤモンド様ナノコンポジット被覆が、水素によって安定化されたダイヤモンド様炭素ネットワークにおける主なsp3結合した炭素の第1の網目と、ケイ素で安定化された酸素の第2の網目との2つの相互貫入網を含む請求項4に記載の方法。
- 伝導性であり、金属非含有であり、かつ、親水性の炭素系被覆(13)を少なくとも部分的に被覆した基板(14、24)であって、前記金属非含有の伝導性炭素系被覆(13)が窒素でドープされており、かつ、108ohm−cm未満の電気抵抗率を有し、前記基板(14、24)が、半導体基板を輸送および/または支持する部品、半導体のパターニングおよびリソグラフィに使用される液体を輸送および/または支持する部品、複写機の部品、ならびに放電加工(EDM)用途に使用される部品からなる群より選択され、
前記炭素系被覆(13)を適用する前に、前記基板(14、24)上に接着促進層を適用し、前記接着促進層が1つ又は複数の層を含み、この1つ又は複数の層が、周期表のIVB族の元素、VB族の元素、VIB族の元素からなる群から選ばれる金属の炭化物、窒化物または炭窒化物の層である基板。 - 前記炭素系被覆(13)が0.1〜20at%の間の窒素を含む請求項6に記載の基板(14、24)。
- 前記炭素系被覆(13)が、窒素をドープしたダイヤモンド様炭素(DLC)被覆を含み、前記ダイヤモンド様炭素被覆が、非晶質水素化炭素(a−C:H)を含む請求項6又は7に記載の基板(14、24)。
- 前記炭素系被覆(13)が、窒素をドープしたダイヤモンド様ナノコンポジット(DLN)被覆を含み、前記ダイヤモンド様ナノコンポジット被覆が、C、H、O、およびSiを含む請求項6又は7に記載の基板(14、24)。
- 前記ダイヤモンド様ナノコンポジット被覆が、水素によって安定化されたダイヤモンド様炭素ネットワークにおける主なsp3結合した炭素の第1の網目と、ケイ素で安定化された酸素の第2の網目との2つの相互貫入網を含む請求項9に記載の基板(14、24)。
- 脱イオン水による基板(14、24)の洗浄を可能にする方法であって、
基板(14、24)を用意する工程であって、前記基板(14、24)は伝導性であり、金属非含有であり、かつ、親水性の炭素系被覆(13)で少なくとも部分的に被覆されており、前記炭素系被覆(13)は、窒素でドープされており、かつ、108ohm−cm未満の電気抵抗率を有する工程と、
前記基板(14、24)を脱イオン水で洗浄する工程と
を含み、前記基板(14、24)が、半導体基板を輸送および/または支持する部品、半導体のパターニングおよびリソグラフィに使用される液体を輸送および/または支持する部品、複写機の部品、ならびに放電加工(EDM)用途に使用される部品からなる群より選択され、
前記基板(14、24)が、前記炭素系被覆(13)を被覆する前に、前記基板上に接着促進層を被覆したものであり、この接着促進層が1つ又は複数の層を含み、この1つ又は複数の層が、周期表のIVB族の元素、VB族の元素、VIB族の元素からなる群から選ばれる金属の炭化物、窒化物または炭窒化物の層である方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06114915.9 | 2006-06-02 | ||
EP06114915 | 2006-06-02 | ||
PCT/EP2007/055346 WO2007141191A1 (en) | 2006-06-02 | 2007-05-31 | Method to prevent metal contamination by a substrate holder |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009539240A JP2009539240A (ja) | 2009-11-12 |
JP5289307B2 true JP5289307B2 (ja) | 2013-09-11 |
Family
ID=37414318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009512605A Active JP5289307B2 (ja) | 2006-06-02 | 2007-05-31 | 基板ホルダーによる金属汚染を防止する方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20090142599A1 (ja) |
EP (2) | EP2024994B1 (ja) |
JP (1) | JP5289307B2 (ja) |
CN (1) | CN101467243B (ja) |
WO (1) | WO2007141191A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103222043B (zh) * | 2010-09-08 | 2016-10-12 | 恩特格林斯公司 | 一种高传导静电夹盘 |
US20150062772A1 (en) * | 2013-08-27 | 2015-03-05 | Varian Semiconductor Equipment Associates, Inc | Barrier Layer For Electrostatic Chucks |
US10261121B2 (en) * | 2016-05-26 | 2019-04-16 | Intel Corporation | Diamond-like carbon coated semiconductor equipment |
JP7012454B2 (ja) * | 2017-04-27 | 2022-01-28 | 株式会社岡本工作機械製作所 | 静電吸着チャックの製造方法並びに半導体装置の製造方法 |
CN113529031B (zh) * | 2020-04-13 | 2023-09-08 | 季华实验室 | 类金刚石薄膜及制备方法 |
KR20230060460A (ko) | 2021-10-27 | 2023-05-04 | 캐논 가부시끼가이샤 | 기판 보유반, 디바이스의 제조 방법, 및 노광 장치 |
Family Cites Families (20)
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KR100189970B1 (ko) * | 1995-08-07 | 1999-06-01 | 윤종용 | 웨이퍼 연마장치 |
US5746954A (en) * | 1995-09-07 | 1998-05-05 | The Dow Chemical Company | Processes for forming thin, durable coatings of perfluorocarbon ionomers on various substrate materials |
US5812362A (en) * | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
US5783243A (en) * | 1996-06-24 | 1998-07-21 | Benado; Adam L. | Process for extracting and desolventizing natural oil-containing food products with minimum structural damage |
US6228471B1 (en) * | 1997-02-04 | 2001-05-08 | N.V. Bekaert S.A. | Coating comprising layers of diamond like carbon and diamond like nanocomposite compositions |
KR100274934B1 (ko) * | 1997-12-29 | 2001-01-15 | 윤종용 | 반도체 웨이퍼 보트 |
US6303225B1 (en) * | 2000-05-24 | 2001-10-16 | Guardian Industries Corporation | Hydrophilic coating including DLC on substrate |
JP2001338878A (ja) * | 2000-03-21 | 2001-12-07 | Sharp Corp | サセプタおよび表面処理方法 |
US6713179B2 (en) * | 2000-05-24 | 2004-03-30 | Guardian Industries Corp. | Hydrophilic DLC on substrate with UV exposure |
WO2002001611A2 (en) * | 2000-06-23 | 2002-01-03 | Applied Materials, Inc. | Electrostatic chuck and method of fabricating the same |
KR20020046214A (ko) * | 2000-12-11 | 2002-06-20 | 어드밴스드 세라믹스 인터내셔날 코포레이션 | 정전척 및 그 제조방법 |
US6633497B2 (en) * | 2001-06-22 | 2003-10-14 | Hewlett-Packard Development Company, L.P. | Resistive cross point array of short-tolerant memory cells |
JP3370318B2 (ja) * | 2001-07-30 | 2003-01-27 | 株式会社半導体エネルギー研究所 | ダイヤモンド状炭素膜を設けた部材 |
JP2003346317A (ja) * | 2002-05-23 | 2003-12-05 | Fuji Photo Film Co Ltd | 垂直磁気記録媒体 |
RU2005129129A (ru) * | 2003-05-02 | 2006-07-27 | Геркулес Инкорпорейтед (Us) | Водные системы, содержащие премиксы добавок, и способы их приготовления |
JP2005012111A (ja) * | 2003-06-20 | 2005-01-13 | Tdk Corp | 磁気抵抗効果素子及び薄膜磁気ヘッド |
US6862211B2 (en) * | 2003-07-07 | 2005-03-01 | Hewlett-Packard Development Company | Magneto-resistive memory device |
US6929349B2 (en) * | 2003-10-14 | 2005-08-16 | Lexmark International, Inc. | Thin film ink jet printhead adhesion enhancement |
JP4247535B2 (ja) * | 2003-11-11 | 2009-04-02 | Hoya株式会社 | ロードアンロード方式用磁気ディスク、ロードアンロード方式用磁気ディスクの製造方法及びロードアンロード方式用磁気ディスクの評価方法 |
US7824498B2 (en) * | 2004-02-24 | 2010-11-02 | Applied Materials, Inc. | Coating for reducing contamination of substrates during processing |
-
2007
- 2007-05-31 EP EP07729748.9A patent/EP2024994B1/en active Active
- 2007-05-31 US US12/302,133 patent/US20090142599A1/en not_active Abandoned
- 2007-05-31 JP JP2009512605A patent/JP5289307B2/ja active Active
- 2007-05-31 WO PCT/EP2007/055346 patent/WO2007141191A1/en active Application Filing
- 2007-05-31 EP EP14165494.7A patent/EP2763162B1/en active Active
- 2007-05-31 CN CN2007800203926A patent/CN101467243B/zh active Active
-
2019
- 2019-09-23 US US16/579,043 patent/US20200017952A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN101467243A (zh) | 2009-06-24 |
EP2024994A1 (en) | 2009-02-18 |
CN101467243B (zh) | 2012-08-08 |
JP2009539240A (ja) | 2009-11-12 |
US20200017952A1 (en) | 2020-01-16 |
WO2007141191A1 (en) | 2007-12-13 |
EP2763162A1 (en) | 2014-08-06 |
EP2763162B1 (en) | 2016-05-11 |
EP2024994B1 (en) | 2014-04-23 |
US20090142599A1 (en) | 2009-06-04 |
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