TWI337209B - - Google Patents
Download PDFInfo
- Publication number
- TWI337209B TWI337209B TW95121489A TW95121489A TWI337209B TW I337209 B TWI337209 B TW I337209B TW 95121489 A TW95121489 A TW 95121489A TW 95121489 A TW95121489 A TW 95121489A TW I337209 B TWI337209 B TW I337209B
- Authority
- TW
- Taiwan
- Prior art keywords
- graphite
- chemical vapor
- preparing
- vapor deposition
- titanium
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 49
- 229910002804 graphite Inorganic materials 0.000 claims description 47
- 239000010439 graphite Substances 0.000 claims description 47
- 239000010408 film Substances 0.000 claims description 32
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 15
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 15
- 239000010410 layer Substances 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000002309 gasification Methods 0.000 claims description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims 6
- 239000004575 stone Substances 0.000 claims 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95121489A TW200801264A (en) | 2006-06-15 | 2006-06-15 | Preparation method of thermal sensing protection layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95121489A TW200801264A (en) | 2006-06-15 | 2006-06-15 | Preparation method of thermal sensing protection layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200801264A TW200801264A (en) | 2008-01-01 |
| TWI337209B true TWI337209B (https=) | 2011-02-11 |
Family
ID=44764996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95121489A TW200801264A (en) | 2006-06-15 | 2006-06-15 | Preparation method of thermal sensing protection layer |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200801264A (https=) |
-
2006
- 2006-06-15 TW TW95121489A patent/TW200801264A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200801264A (en) | 2008-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI585247B (zh) | 碳化矽－碳化鉭複合材及載置台 | |
| CN100526008C (zh) | 金刚石膜的抛光方法 | |
| CN101880866B (zh) | 一种在硬质合金上为金刚石涂层制备金刚石-碳化硅-硅化钴复合中间层的方法 | |
| CN118851797B (zh) | 一种碳化钽复合涂层及其制备方法和应用 | |
| JP6630025B1 (ja) | 半導体製造用部品、複合体コーティング層を含む半導体製造用部品及びその製造方法 | |
| CN103352202B (zh) | 一种常压化学气相沉积大面积高质量双层石墨烯薄膜的可控制备方法 | |
| CN106835054A (zh) | 金刚石单晶表面金属化处理的方法 | |
| JPH0892742A (ja) | マトリクス複合体およびその表面の準備方法 | |
| CN103628036B (zh) | 立方氮化硼涂层刀具的制备方法 | |
| CA2583683A1 (en) | Surface reconstruction method for silicon carbide substrate | |
| CN107523828B (zh) | 一种GaN与金刚石复合散热结构的制备方法 | |
| CN108863443B (zh) | 一种平面复合加热器的制备方法 | |
| TWI337209B (https=) | ||
| CN109136842B (zh) | 石墨烯薄膜及其制备方法 | |
| JP3773341B2 (ja) | ＳｉＣ被覆炭素材料 | |
| CN119877098A (zh) | 用于生长金刚石膜的基体结构及金刚石膜的制备方法 | |
| CN112968005A (zh) | 带连通孔的金刚石复合片及其制造方法 | |
| US20080050522A1 (en) | Preparative method for protective layer of susceptor | |
| KR20240088896A (ko) | 다결정 탄화규소 기판의 제조 방법 | |
| CN107628605A (zh) | 一种三步法制备无需转移的石墨烯的方法及获得的石墨烯 | |
| TW201011119A (en) | Graphite protection film and production method thereof | |
| CN112941475A (zh) | 用于水处理过程的去除浮油的dlc薄膜及制备方法 | |
| JP4570372B2 (ja) | 耐プラズマ性半導体製造装置用部材 | |
| CN115110147B (zh) | 一种生长低翘曲半导体衬底晶片的方法 | |
| CN119753624A (zh) | 半导体热场结构件及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |