JP7407121B2 - パターニング用途のためのカーボンハードマスク及び関連方法 - Google Patents
パターニング用途のためのカーボンハードマスク及び関連方法 Download PDFInfo
- Publication number
- JP7407121B2 JP7407121B2 JP2020554282A JP2020554282A JP7407121B2 JP 7407121 B2 JP7407121 B2 JP 7407121B2 JP 2020554282 A JP2020554282 A JP 2020554282A JP 2020554282 A JP2020554282 A JP 2020554282A JP 7407121 B2 JP7407121 B2 JP 7407121B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processing
- power
- gas
- substrate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 95
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 21
- 229910052799 carbon Inorganic materials 0.000 title claims description 21
- 238000000059 patterning Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 118
- 238000000151 deposition Methods 0.000 claims description 42
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 40
- 230000008021 deposition Effects 0.000 claims description 27
- 239000004215 Carbon black (E152) Substances 0.000 claims description 15
- 229930195733 hydrocarbon Natural products 0.000 claims description 15
- 150000002430 hydrocarbons Chemical class 0.000 claims description 15
- 239000003085 diluting agent Substances 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 29
- 239000010410 layer Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 15
- 239000003989 dielectric material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (28)
- 基板を処理する方法であって、
基板を、処理チャンバの処理空間内に配置された基板支持体上に配置すること、
炭化水素ガス及び希釈ガスを含む処理ガスを前記処理空間の中に流入させること、
前記処理空間を100mTorr未満の処理圧力に維持すること、
第1の電力を前記処理チャンバの1以上の電源電極のうちの1つに印加することによって、前記処理ガスの堆積プラズマを点火及び維持すること、
前記基板支持体を摂氏350度未満の処理温度に維持すること、
前記基板の表面を前記堆積プラズマに曝露すること、並びに
アモルファスカーボン層を前記基板の前記表面上に堆積させることを含み、
堆積した前記アモルファスカーボン層が、1.8g/cm 3 を超える密度を有する、方法。 - 堆積した前記アモルファスカーボン層が、500MPa未満の膜応力を有する、請求項1に記載の方法。
- 前記膜応力が引張又は圧縮膜応力である、請求項2に記載の方法。
- 基板を処理する方法であって、
基板を、処理チャンバの処理空間内に配置された基板支持体上に配置すること、
炭化水素ガス及び希釈ガスを含む処理ガスを前記処理空間の中に流入させること、
前記処理空間を100mTorr未満の処理圧力に維持すること、
第1の電力を前記処理チャンバの1以上の電源電極のうちの1つに印加することによって、前記処理ガスの堆積プラズマを点火及び維持すること、
前記基板支持体を摂氏350度未満の処理温度に維持すること、
前記基板の表面を前記堆積プラズマに曝露すること、並びに
アモルファスカーボン層を前記基板の前記表面上に堆積させることを含み、
堆積した前記アモルファスカーボン層が、500MPa未満の膜応力を有する、方法。 - 前記膜応力が引張又は圧縮膜応力である、請求項4に記載の方法。
- 堆積した前記アモルファスカーボン層が、50GPaを超えるヤング率を有する、請求項1から5のいずれか一項に記載の方法。
- 堆積した前記アモルファスカーボン層が、633nmの波長で0.15未満の吸収係数(光学K)を有する、請求項1から6のいずれか一項に記載の方法。
- 前記炭化水素ガスが、CH4、C2H2、C3H8、C4H10、C2H4、C3H6、C4H8、C5H10、又はそれらの組み合わせのうちの1つを含む、請求項1から7のいずれか一項に記載の方法。
- 前記炭化水素ガス対前記希釈ガスの比が、1:10と10:1の間である、請求項1から8のいずれか一項に記載の方法。
- 前記希釈ガスが、H 2 を含み、前記処理ガス内の前記H 2 対前記炭化水素ガスの比が、0.5:1と1:10の間である、請求項1から8のいずれか一項に記載の方法。
- 前記処理温度が、摂氏100度未満である、請求項1から10のいずれか一項に記載の方法。
- 前記処理圧力が、20mTorr未満である、請求項1から11のいずれか一項に記載の方法。
- 前記1以上の電源電極のそれぞれが前記基板支持体の一部である、請求項1から12のいずれか一項に記載の方法。
- 前記第1の電力が、前記基板支持体の基板受け入れ表面の平方センチメートル当たり0.7Wと11.3Wの間の交流電力であり、前記第1の電力が、350kHzと100MHzの間の周波数を有する、請求項1から13のいずれか一項に記載の方法。
- 第2の電力を前記1以上の電源電極のうちの1つに印加することを更に含み、前記第2の電力が、前記基板支持体の前記基板受け入れ表面の平方センチメートル当たり0.14Wと7.1Wの間の交流電力であり、前記第2の電力が、350kHzと100MHzの間の周波数を有し、前記第1の電力の前記周波数が、前記第2の電力の前記周波数とは異なっている、請求項14に記載の方法。
- 基板を処理する方法であって、
基板を、処理チャンバの処理空間内に配置された基板支持体上に配置すること、
炭化水素ガス及び希釈ガスを含む処理ガスであって、前記炭化水素ガスがCH 4 、C 2 H 2 、C 3 H 8 、C 4 H 10 、C 2 H 4 、C 3 H 6 、C 4 H 8 、C 5 H 10 又はそれらの組み合わせのうちの1つを含む処理ガスを、前記処理空間の中に流入させること、
前記処理空間を20mTorr未満の処理圧力に維持すること、
第1の電力を前記処理チャンバの1以上の電源電極のうちの1つに印加することによって、前記処理ガスの堆積プラズマを点火及び維持することであって、前記1以上の電源電極のそれぞれが前記基板支持体の一部であり、前記第1の電力が、前記基板支持体の基板受け入れ表面の平方センチメートル当たり0.7Wと11.3Wの間の交流電力であり、前記第1の電力が、350kHzと100MHzの間の周波数を有する、前記処理ガスの堆積プラズマを点火及び維持すること、
第2の電力を前記1以上の電源電極のうちの1つに印加することであって、前記第2の電力が、前記基板支持体の前記基板受け入れ表面の平方センチメートル当たり0.14Wと7.1Wの間の交流電力であり、前記第2の電力が、350kHzと100MHzの間の周波数を有し、前記第1の電力の前記周波数が、前記第2の電力の前記周波数とは異なっている、第2の電力を印加すること、
前記基板支持体を摂氏100度未満の処理温度に維持すること、
前記基板の表面を前記堆積プラズマに曝露すること、並びに
アモルファスカーボン層を前記基板の前記表面上に堆積させることを含む、方法。 - 基板を処理する方法であって、
基板を、処理チャンバの処理空間内に配置された基板支持体上に配置すること、
炭化水素ガス及び希釈ガスを含む処理ガスを前記処理空間の中に流入させることと、
前記処理空間を20mTorr未満の処理圧力に維持すること、
第1の交流電力を前記基板支持体の1以上の電源電極のうちの1つに印加することによって、前記処理ガスの堆積プラズマを点火及び維持することであって、前記第1の交流電力が、前記基板支持体の基板受け入れ表面の平方センチメートル当たり0.7ワットと15ワットの間である、前記処理ガスの堆積プラズマを点火及び維持すること、
前記基板支持体を摂氏100度未満の処理温度に維持すること、
前記基板の表面を前記堆積プラズマに曝露すること、並びに
アモルファスカーボン層を前記基板の前記表面上に堆積させることを含み、
前記希釈ガスが、H 2 を含み、前記処理ガス内の前記H 2 対前記炭化水素ガスの比が、0.5:1と1:10の間である、方法。 - 第2の交流電力を前記基板支持体の前記1以上の電源電極のうちの1つに印加することを更に含み、前記第2の交流電力が、前記基板支持体の前記基板受け入れ表面の平方センチメートル当たり0.14Wと7.1Wの間であり、前記第1の交流電力と前記第2の交流電力が、それぞれ、350kHzと100MHzの間の周波数を有し、前記第1の交流電力の前記周波数が、前記第2の交流電力の前記周波数とは異なっている、請求項17に記載の方法。
- 基板を処理する方法であって、
基板を、処理チャンバの処理空間内に配置された基板支持体上に配置すること、
炭化水素ガス及び希釈ガスを含む処理ガスを前記処理空間の中に流入させることと、
前記処理空間を20mTorr未満の処理圧力に維持すること、
第1の交流電力を前記基板支持体の1以上の電源電極のうちの1つに印加することによって、前記処理ガスの堆積プラズマを点火及び維持することであって、前記第1の交流電力が、前記基板支持体の基板受け入れ表面の平方センチメートル当たり0.7ワットと15ワットの間である、前記処理ガスの堆積プラズマを点火及び維持すること、
第2の交流電力を前記基板支持体の前記1以上の電源電極のうちの1つに印加することであって、前記第2の交流電力が、前記基板支持体の前記基板受け入れ表面の平方センチメートル当たり0.14ワットと7.1ワットの間であり、前記第1の交流電力と前記第2の交流電力が、それぞれ、350kHzと100MHzの間の周波数を有し、前記第1の交流電力の前記周波数が、前記第2の交流電力の前記周波数とは異なっている、第2の交流電力を印加すること、
前記基板支持体を摂氏100度未満の処理温度に維持すること、
前記基板の表面を前記堆積プラズマに曝露すること、並びに
アモルファスカーボン層を前記基板の前記表面上に堆積させることを含む、方法。 - 前記炭化水素ガスが、CH 4 、C 2 H 2 、C 3 H 8 、C 4 H 10 、C 2 H 4 、C 3 H 6 、C 4 H 8 、C 5 H 10 、又はそれらの組み合わせのうちの1つを含む、請求項17から19のいずれか一項に記載の方法。
- 堆積した前記アモルファスカーボン層が、500MPa未満の膜応力を有する、請求項16から20のいずれか一項に記載の方法。
- 前記膜応力が引張又は圧縮膜応力である、請求項21に記載の方法。
- 前記処理温度が、摂氏-50度以上の零下温度である、請求項1から22のいずれか一項に記載の方法。
- 堆積した前記アモルファスカーボン層が、当該層を貫通するように形成された複数の開口部を有し、前記複数の開口部のそれぞれが、2:1を超える高さ対幅の比を有する、請求項1から23のいずれか一項に記載の方法。
- 基板の表面上に配置されるアモルファスカーボン層を備え、前記アモルファスカーボン層が、1.8g/cm3を超える密度、50GPaを超えるヤング率、500MPa未満の膜応力、及び633nmの波長で0.15未満の吸収係数(光学K)を有する、カーボンハードマスク。
- 前記膜応力が引張又は圧縮膜応力である、請求項25に記載のカーボンハードマスク。
- 前記アモルファスカーボン層が、当該層を貫通するように形成された複数の開口部を有し、前記複数の開口部のそれぞれが、2:1を超える高さ対幅の比を有する、請求項25又は26に記載のカーボンハードマスク。
- 前記複数の開口部のそれぞれが、10:1を超える高さ対幅の比を有する、請求項27に記載のカーボンハードマスク。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862655049P | 2018-04-09 | 2018-04-09 | |
US62/655,049 | 2018-04-09 | ||
PCT/US2019/026354 WO2019199681A1 (en) | 2018-04-09 | 2019-04-08 | Carbon hard masks for patterning applications and methods related thereto |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021520639A JP2021520639A (ja) | 2021-08-19 |
JPWO2019199681A5 JPWO2019199681A5 (ja) | 2022-04-18 |
JP7407121B2 true JP7407121B2 (ja) | 2023-12-28 |
Family
ID=68162992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020554282A Active JP7407121B2 (ja) | 2018-04-09 | 2019-04-08 | パターニング用途のためのカーボンハードマスク及び関連方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US11469097B2 (ja) |
JP (1) | JP7407121B2 (ja) |
KR (1) | KR20200130490A (ja) |
SG (1) | SG11202009406RA (ja) |
TW (2) | TW202318505A (ja) |
WO (1) | WO2019199681A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200130490A (ko) | 2018-04-09 | 2020-11-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 패터닝 애플리케이션들을 위한 탄소 하드 마스크들 및 이와 관련된 방법들 |
US11603591B2 (en) * | 2018-05-03 | 2023-03-14 | Applied Materials Inc. | Pulsed plasma (DC/RF) deposition of high quality C films for patterning |
US11842897B2 (en) | 2018-10-26 | 2023-12-12 | Applied Materials, Inc. | High density carbon films for patterning applications |
US20220178026A1 (en) * | 2020-12-03 | 2022-06-09 | Applied Materials, Inc. | Carbon cvd deposition methods to mitigate stress induced defects |
US20230022359A1 (en) * | 2021-07-22 | 2023-01-26 | Applied Materials, Inc. | Methods, apparatus, and systems for maintaining film modulus within a predetermined modulus range |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009505402A (ja) | 2005-08-08 | 2009-02-05 | アプライド マテリアルズ インコーポレイテッド | 低温で堆積された炭素含有ハードマスクを使用する半導体基板プロセス |
JP2010021282A (ja) | 2008-07-09 | 2010-01-28 | Dan Takuma:Kk | 半導体用ケース |
WO2011146212A2 (en) | 2010-05-20 | 2011-11-24 | Applied Materials, Inc. | Ultra high selectivity ashable hard mask film |
JP2012233259A (ja) | 2012-06-25 | 2012-11-29 | Tokyo Electron Ltd | アモルファスカーボン膜の成膜方法、それを用いた半導体装置の製造方法、およびコンピュータ読取可能な記憶媒体 |
JP2017504209A (ja) | 2014-01-10 | 2017-02-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 炭素膜応力緩和 |
WO2018032684A1 (zh) | 2016-08-16 | 2018-02-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 卡盘、反应腔室及半导体加工设备 |
WO2018034811A1 (en) | 2016-08-19 | 2018-02-22 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
Family Cites Families (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0221531A3 (en) | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | High heat conductive insulated substrate and method of manufacturing the same |
JPH05508266A (ja) | 1991-04-03 | 1993-11-18 | イーストマン・コダック・カンパニー | GaAsをドライエッチングするための高耐久性マスク |
US5352493A (en) | 1991-05-03 | 1994-10-04 | Veniamin Dorfman | Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films |
US5470661A (en) * | 1993-01-07 | 1995-11-28 | International Business Machines Corporation | Diamond-like carbon films from a hydrocarbon helium plasma |
JPH07268622A (ja) | 1994-03-01 | 1995-10-17 | Applied Sci & Technol Inc | マイクロ波プラズマ付着源 |
TW422892B (en) | 1997-03-27 | 2001-02-21 | Applied Materials Inc | Technique for improving chucking reproducibility |
US6013980A (en) | 1997-05-09 | 2000-01-11 | Advanced Refractory Technologies, Inc. | Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatings |
JP2868120B2 (ja) | 1997-06-11 | 1999-03-10 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
US6372303B1 (en) | 1997-06-16 | 2002-04-16 | Robert Bosch Gmbh | Method and device for vacuum-coating a substrate |
MY132894A (en) * | 1997-08-25 | 2007-10-31 | Ibm | Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof |
US6320295B1 (en) | 1998-11-18 | 2001-11-20 | Mcgill Robert Andrew | Diamond or diamond like carbon coated chemical sensors and a method of making same |
US6592771B1 (en) | 1999-04-08 | 2003-07-15 | Sony Corporation | Vapor-phase processing method and apparatus therefor |
DE60031544T2 (de) | 1999-05-19 | 2007-08-02 | Mitsubishi Shoji Plastics Corp. | Dlc-film, dlc-beschichteter plastikbehälter und verfahren und vorrichtung zur herstellung solcher behälter |
US6863835B1 (en) | 2000-04-25 | 2005-03-08 | James D. Carducci | Magnetic barrier for plasma in chamber exhaust |
US6936551B2 (en) | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
US7247221B2 (en) | 2002-05-17 | 2007-07-24 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
US6830939B2 (en) | 2002-08-28 | 2004-12-14 | Verity Instruments, Inc. | System and method for determining endpoint in etch processes using partial least squares discriminant analysis in the time domain of optical emission spectra |
US6900002B1 (en) | 2002-11-19 | 2005-05-31 | Advanced Micro Devices, Inc. | Antireflective bi-layer hardmask including a densified amorphous carbon layer |
EP1598441B1 (en) | 2003-02-26 | 2018-09-26 | Sumitomo Electric Industries, Ltd. | Amorphous carbon film and process for producing the same |
KR100988085B1 (ko) | 2003-06-24 | 2010-10-18 | 삼성전자주식회사 | 고밀도 플라즈마 처리 장치 |
US7129180B2 (en) * | 2003-09-12 | 2006-10-31 | Micron Technology, Inc. | Masking structure having multiple layers including an amorphous carbon layer |
US7824498B2 (en) | 2004-02-24 | 2010-11-02 | Applied Materials, Inc. | Coating for reducing contamination of substrates during processing |
US7556718B2 (en) | 2004-06-22 | 2009-07-07 | Tokyo Electron Limited | Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer |
JP2006049817A (ja) | 2004-07-07 | 2006-02-16 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
WO2006052370A2 (en) | 2004-11-03 | 2006-05-18 | Applied Materials, Inc. | Diamond like carbon films |
US8808856B2 (en) | 2005-01-05 | 2014-08-19 | Pureron Japan Co., Ltd. | Apparatus and method for producing carbon film using plasma CVD and carbon film |
US7247582B2 (en) | 2005-05-23 | 2007-07-24 | Applied Materials, Inc. | Deposition of tensile and compressive stressed materials |
EP1954429B1 (en) | 2005-12-02 | 2015-05-27 | United Technologies Corporation | Metal-free diamond-like-carbon coatings |
US7264688B1 (en) | 2006-04-24 | 2007-09-04 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and toroidal plasma sources |
KR100812504B1 (ko) | 2006-09-05 | 2008-03-11 | 성균관대학교산학협력단 | 전도성 고경도 탄소박막의 제조 방법 및 박막 전계 발광소자용 전극으로의 응용 |
US8500963B2 (en) | 2006-10-26 | 2013-08-06 | Applied Materials, Inc. | Sputtering of thermally resistive materials including metal chalcogenides |
US20080188090A1 (en) | 2007-02-02 | 2008-08-07 | Applied Materials, Inc. | Internal balanced coil for inductively coupled high density plasma processing chamber |
US7959735B2 (en) | 2007-02-08 | 2011-06-14 | Applied Materials, Inc. | Susceptor with insulative inserts |
KR100941070B1 (ko) | 2007-05-10 | 2010-02-09 | 세메스 주식회사 | 플라즈마를 이용하여 기판을 처리하는 장치 |
US20090029067A1 (en) | 2007-06-28 | 2009-01-29 | Sciamanna Steven F | Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors |
US8105660B2 (en) | 2007-06-28 | 2012-01-31 | Andrew W Tudhope | Method for producing diamond-like carbon coatings using PECVD and diamondoid precursors on internal surfaces of a hollow component |
US8101444B2 (en) | 2007-08-17 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2009167512A (ja) | 2008-01-21 | 2009-07-30 | Kobe Steel Ltd | 摺動部品用ダイヤモンドライクカーボン皮膜およびその製造方法 |
US8133819B2 (en) | 2008-02-21 | 2012-03-13 | Applied Materials, Inc. | Plasma etching carbonaceous layers with sulfur-based etchants |
JP4704453B2 (ja) | 2008-07-16 | 2011-06-15 | 株式会社プラズマイオンアシスト | ダイヤモンドライクカーボン製造装置、製造方法及び工業製品 |
WO2010045153A2 (en) * | 2008-10-14 | 2010-04-22 | Applied Materials, Inc. | Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd) |
US7967913B2 (en) | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
JP4755262B2 (ja) | 2009-01-28 | 2011-08-24 | 株式会社神戸製鋼所 | ダイヤモンドライクカーボン膜の製造方法 |
US8900471B2 (en) | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
US7842622B1 (en) | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
CN103597119B (zh) | 2009-07-08 | 2017-03-08 | 艾克斯特朗欧洲公司 | 用于等离子体处理的装置和方法 |
KR20120092184A (ko) | 2009-12-07 | 2012-08-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 도핑된 영역을 세정하고 도핑된 영역 위에 음으로 대전된 패시베이션 층을 형성하는 방법 |
KR20110115291A (ko) | 2010-04-15 | 2011-10-21 | 경북대학교 산학협력단 | Dlc 코팅장치 |
US20120237693A1 (en) | 2011-03-17 | 2012-09-20 | Applied Materials, Inc. | In-situ clean process for metal deposition chambers |
US20120276743A1 (en) | 2011-04-26 | 2012-11-01 | Jai-Hyung Won | Methods of forming a carbon type hard mask layer using induced coupled plasma and methods of forming patterns using the same |
KR20120121340A (ko) | 2011-04-26 | 2012-11-05 | 삼성전자주식회사 | 유도결합 플라즈마를 이용한 탄소계 하드 마스크막 제조 방법 및 이를 이용한 패턴 형성 방법 |
JP2012233529A (ja) | 2011-04-28 | 2012-11-29 | F C C:Kk | 動力伝達装置 |
JP2013021382A (ja) | 2011-07-07 | 2013-01-31 | Toshiba Corp | 同軸ケーブル |
US20130034666A1 (en) | 2011-08-01 | 2013-02-07 | Applied Materials, Inc. | Inductive plasma sources for wafer processing and chamber cleaning |
EP2587518B1 (en) | 2011-10-31 | 2018-12-19 | IHI Hauzer Techno Coating B.V. | Apparatus and Method for depositing Hydrogen-free ta C Layers on Workpieces and Workpiece |
JP5935116B2 (ja) | 2011-12-16 | 2016-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
SG10201605000PA (en) | 2011-12-23 | 2016-08-30 | Applied Materials Inc | Methods and apparatus for cleaning substrate surfaces with atomic hydrogen |
US8679987B2 (en) | 2012-05-10 | 2014-03-25 | Applied Materials, Inc. | Deposition of an amorphous carbon layer with high film density and high etch selectivity |
CN103594495A (zh) | 2012-08-16 | 2014-02-19 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
US20140273461A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Carbon film hardmask stress reduction by hydrogen ion implantation |
WO2014149175A1 (en) | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | An amorphous carbon deposition process using dual rf bias frequency applications |
US20140355912A1 (en) | 2013-05-29 | 2014-12-04 | Garett F. Fortune | Odor resistant bag and film |
US9269587B2 (en) | 2013-09-06 | 2016-02-23 | Applied Materials, Inc. | Methods for etching materials using synchronized RF pulses |
JP2017507477A (ja) | 2014-01-08 | 2017-03-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | アモルファスカーボンフィルムの中へのイオン注入による高エッチング選択性ハードマスク材料の開発 |
US9984915B2 (en) | 2014-05-30 | 2018-05-29 | Infineon Technologies Ag | Semiconductor wafer and method for processing a semiconductor wafer |
US20160042961A1 (en) | 2014-08-06 | 2016-02-11 | Applied Materials, Inc. | Electron beam plasma source with rotating cathode, backside helium cooling and liquid cooled pedestal for uniform plasma generation |
US9695503B2 (en) | 2014-08-22 | 2017-07-04 | Applied Materials, Inc. | High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer |
US9390910B2 (en) | 2014-10-03 | 2016-07-12 | Applied Materials, Inc. | Gas flow profile modulated control of overlay in plasma CVD films |
US10475626B2 (en) | 2015-03-17 | 2019-11-12 | Applied Materials, Inc. | Ion-ion plasma atomic layer etch process and reactor |
US9646818B2 (en) * | 2015-03-23 | 2017-05-09 | Applied Materials, Inc. | Method of forming planar carbon layer by applying plasma power to a combination of hydrocarbon precursor and hydrogen-containing precursor |
US10153139B2 (en) | 2015-06-17 | 2018-12-11 | Applied Materials, Inc. | Multiple electrode substrate support assembly and phase control system |
US20170040140A1 (en) | 2015-08-06 | 2017-02-09 | Seagate Technology Llc | Magnet array for plasma-enhanced chemical vapor deposition |
US10879041B2 (en) | 2015-09-04 | 2020-12-29 | Applied Materials, Inc. | Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers |
US10418243B2 (en) | 2015-10-09 | 2019-09-17 | Applied Materials, Inc. | Ultra-high modulus and etch selectivity boron-carbon hardmask films |
US9695593B2 (en) | 2015-11-10 | 2017-07-04 | Detec Systems Llc | Leak detection in roof membranes |
US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
KR20170127724A (ko) | 2016-05-12 | 2017-11-22 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US9852889B1 (en) | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
US10249495B2 (en) | 2016-06-28 | 2019-04-02 | Applied Materials, Inc. | Diamond like carbon layer formed by an electron beam plasma process |
US10544505B2 (en) | 2017-03-24 | 2020-01-28 | Applied Materials, Inc. | Deposition or treatment of diamond-like carbon in a plasma reactor |
US10954129B2 (en) | 2017-06-08 | 2021-03-23 | Applied Materials, Inc. | Diamond-like carbon as mandrel |
US11043372B2 (en) | 2017-06-08 | 2021-06-22 | Applied Materials, Inc. | High-density low temperature carbon films for hardmask and other patterning applications |
US11043375B2 (en) | 2017-08-16 | 2021-06-22 | Applied Materials, Inc. | Plasma deposition of carbon hardmask |
KR20200130490A (ko) | 2018-04-09 | 2020-11-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 패터닝 애플리케이션들을 위한 탄소 하드 마스크들 및 이와 관련된 방법들 |
US11603591B2 (en) | 2018-05-03 | 2023-03-14 | Applied Materials Inc. | Pulsed plasma (DC/RF) deposition of high quality C films for patterning |
US11587764B2 (en) | 2018-11-05 | 2023-02-21 | Applied Materials, Inc. | Magnetic housing systems |
-
2019
- 2019-04-08 KR KR1020207032047A patent/KR20200130490A/ko not_active Application Discontinuation
- 2019-04-08 WO PCT/US2019/026354 patent/WO2019199681A1/en active Application Filing
- 2019-04-08 JP JP2020554282A patent/JP7407121B2/ja active Active
- 2019-04-08 SG SG11202009406RA patent/SG11202009406RA/en unknown
- 2019-04-08 US US17/045,453 patent/US11469097B2/en active Active
- 2019-04-09 TW TW111124877A patent/TW202318505A/zh unknown
- 2019-04-09 TW TW108112252A patent/TWI780320B/zh active
-
2022
- 2022-10-06 US US17/961,224 patent/US11784042B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009505402A (ja) | 2005-08-08 | 2009-02-05 | アプライド マテリアルズ インコーポレイテッド | 低温で堆積された炭素含有ハードマスクを使用する半導体基板プロセス |
JP2010021282A (ja) | 2008-07-09 | 2010-01-28 | Dan Takuma:Kk | 半導体用ケース |
WO2011146212A2 (en) | 2010-05-20 | 2011-11-24 | Applied Materials, Inc. | Ultra high selectivity ashable hard mask film |
JP2012233259A (ja) | 2012-06-25 | 2012-11-29 | Tokyo Electron Ltd | アモルファスカーボン膜の成膜方法、それを用いた半導体装置の製造方法、およびコンピュータ読取可能な記憶媒体 |
JP2017504209A (ja) | 2014-01-10 | 2017-02-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 炭素膜応力緩和 |
WO2018032684A1 (zh) | 2016-08-16 | 2018-02-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 卡盘、反应腔室及半导体加工设备 |
WO2018034811A1 (en) | 2016-08-19 | 2018-02-22 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
Also Published As
Publication number | Publication date |
---|---|
JP2021520639A (ja) | 2021-08-19 |
TW201944490A (zh) | 2019-11-16 |
TWI780320B (zh) | 2022-10-11 |
US11469097B2 (en) | 2022-10-11 |
US20210043449A1 (en) | 2021-02-11 |
US11784042B2 (en) | 2023-10-10 |
WO2019199681A1 (en) | 2019-10-17 |
US20230021761A1 (en) | 2023-01-26 |
CN111954921A (zh) | 2020-11-17 |
SG11202009406RA (en) | 2020-10-29 |
KR20200130490A (ko) | 2020-11-18 |
TW202318505A (zh) | 2023-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7407121B2 (ja) | パターニング用途のためのカーボンハードマスク及び関連方法 | |
JP2023156333A (ja) | パターニングのための高品質c膜のパルスプラズマ(dc/rf)蒸着 | |
JP5265100B2 (ja) | 炭素系ハードマスクを開く方法 | |
KR102460795B1 (ko) | 낮은 종횡비 적층물의 패터닝을 위한 방법 및 시스템 | |
US20230343586A1 (en) | Method of using dual frequency rf power in a process chamber | |
TW202025212A (zh) | 低溫高品質的介電膜 | |
TWI827705B (zh) | 用於圖案化應用的高密度碳膜 | |
CN111954921B (zh) | 用于图案化应用的碳硬掩模及相关的方法 | |
US11404263B2 (en) | Deposition of low-stress carbon-containing layers | |
US11810792B2 (en) | Etching method and substrate processing apparatus | |
WO2023233673A1 (ja) | エッチング方法及びプラズマ処理装置 | |
US20230343598A1 (en) | Method For Improving Etch Rate And Critical Dimension Uniformity When Etching High Aspect Ratio Features Within A Hard Mask Layer | |
TW202209476A (zh) | 用於光阻底層應用之矽碳化物膜的乾式蝕刻方法 | |
JP2022048094A (ja) | エッチング処理方法及び基板処理装置 | |
KR20200121238A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR20230048108A (ko) | 저응력 붕소 함유 층들의 증착 | |
TW202415796A (zh) | 用於圖案化應用的高密度碳膜 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220407 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220407 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230329 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230425 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230720 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231024 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20231124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231218 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7407121 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |