CN111954921A - 用于图案化应用的碳硬掩模及相关的方法 - Google Patents

用于图案化应用的碳硬掩模及相关的方法 Download PDF

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CN111954921A
CN111954921A CN201980024613.XA CN201980024613A CN111954921A CN 111954921 A CN111954921 A CN 111954921A CN 201980024613 A CN201980024613 A CN 201980024613A CN 111954921 A CN111954921 A CN 111954921A
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E·文卡塔苏布磊曼聂
杨扬
P·曼纳
K·拉马斯瓦米
T·越泽
A·B·玛里克
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Abstract

此处的实施例提供一种使用等离子体增强化学气相沉积(PECVD)工艺沉积非晶碳层的方法，及由此形成的硬掩模。在一个实施例中，一种处理基板的方法，包括以下步骤：将基板定位在基板支撑件上，基板支撑件安置于处理腔室的处理容积中；使包含碳氢化合物气体及稀释气体的处理气体流至处理容积中；将处理容积维持在小于约100mTorr的处理压力下；通过施加第一功率至处理腔室的一或更多功率电极之一者，点燃并维持处理气体的沉积等离子体；将基板支撑件维持在小于约350℃的处理温度下；将基板的表面暴露至沉积等离子体；及在基板的表面上沉积非晶碳层。

Description

用于图案化应用的碳硬掩模及相关的方法
背景
技术领域
此处所述的实施例大致关于半导体器件制造的领域，且更具体而言，关于在电子器件制造工艺中使用的非晶碳层及沉积非晶碳层的方法。
背景技术
由非晶碳形成的碳硬掩模在半导体器件制造中用作为在基板表面或其材料表面层中形成高深宽比开口(例如，2：1或更大的高度对宽度比率)的蚀刻掩模。一般而言，关于形成高深宽比开口的处理问题，包括堵塞、孔形状扭曲、图案变形、顶部关键尺寸放大、线弯曲及轮廓折弯，都是传统地沉积的碳硬掩模的非所欲材料特性的结果。举例而言，具有较低材料密度及较低材料硬度(即，杨氏模量)之一者或其组合的碳硬掩模，已知当与具有较高密度或较高硬度的硬掩模材料比较时，会造成高深宽比开口增加的变形。类似地，在硬掩模材料和其下方安置的待蚀刻的基板材料之间的较低蚀刻选择性、以及具有较高膜应力(压缩或拉伸)的硬掩模材料两者，已知当与使用对下方基板材料具有较高蚀刻选择性及较低膜应力的硬掩模材料的工艺比较时，会造成增加的裂缝图案变形及线弯曲。再者，随着关键尺寸(CD)缩小及高深宽比开口的高度增加，用以形成高深宽比开口的传统地沉积的碳硬掩模的厚度亦增加。不幸地，归因于低光学K及增加的厚度之一者或两者的具有较低透明度的硬掩模在后续光刻工艺中可造成对齐问题。对下方基板材料具有较高蚀刻选择性的硬掩模材料与具有较低蚀刻选择性的硬掩模比较，允许减少的厚度，且因此为所希望的。再者，在硬掩模材料和下方基板材料之间具有较低蚀刻选择性的工艺通常依赖相对较厚的硬掩模，这非所欲地增加沉积的处理时间及成本，导致降低的基板处理能力及增加的装置成本。
因此，本领域中需要改良的非晶碳硬掩模及形成改良的非晶碳硬掩模的改良的方法。
发明内容
本公开的实施例大致说明使用等离子体增强化学气相沉积(PECVD)工艺及根据其形成的硬掩模，将非晶碳层沉积至基板上的方法，包括沉积在基板上先前形成的层上。
在一个实施例中，一种处理基板的方法，包括以下步骤：将基板定位在基板支撑件上，基板支撑件安置于处理腔室的处理容积中；使包含碳氢化合物气体及稀释气体的处理气体流至处理容积中；将处理容积维持在小于约100mTorr的处理压力下；通过施加第一功率至处理腔室的一或更多功率电极之一者，点燃并维持处理气体的沉积等离子体；将基板支撑件维持在小于约350℃的处理温度下；将基板的表面暴露至沉积等离子体；及在基板的表面上沉积非晶碳层。
在另一实施例中，一种处理基板的方法，包括以下步骤：将基板定位在基板支撑件上，基板支撑件安置于处理腔室的处理容积中；使包含碳氢化合物气体及稀释气体的处理气体流至处理容积中；将处理容积维持在小于约20mTorr的处理压力下；通过施加第一ac功率至该基板支撑件的一或更多功率电极之一者，点燃并维持处理气体的沉积等离子体，其中第一ac功率在基板支撑件的基板接收表面每cm2介于约0.7W与约15W之间；将基板支撑件维持在小于约100℃的处理温度下；将基板的表面暴露至沉积等离子体；及在基板的表面上沉积非晶碳层。
在另一实施例中，一种碳硬掩模，包括非晶碳层，安置于基板的表面上，其中非晶碳层具有大于约1.8g/cm3的密度、大于约50GPa的杨氏模量、小于约500MPa的膜应力、且在约633nm的波长下具有小于约0.15的吸收系数(光学K)。
附图说明
通过以上所载本公开的特征的方式可详细理解，而以上简要概述的本公开的更具体说明可通过参考实施例而获得，某些实施例图示于随附附图中。然而，应理解，随附附图仅图示本公开的典型实施例，且因此不应视为对范围的限制，因为本公开可认可其他均等效果的实施例。
图1根据一个实施例，为用以实践此处所提及的方法的示例性处理腔室的示意性剖视图。
图2根据一个实施例，为沉积非晶碳层的方法的流程图。
图3根据一个实施例，图示由根据图2中提及的方法沉积的非晶碳层所形成的碳硬掩模。
具体实施方式
本公开的实施例大致关于使用等离子体增强化学气相沉积(PECVD)工艺，用于将非晶碳层沉积至基板上的方法，包括沉积在基板上先前形成的层上。具体而言，此处所述的方法提供，与在沉积非晶碳层的传统方法中所典型地使用的相比，较低的处理压力，例如小于约100mTorr，较低的处理温度，例如小于约350℃，及较高的功率，例如大于约1000W。在此处的某些实施例中，用以点燃并维持沉积等离子体的功率被输送至安置于或耦合至具有基板安置于其上的基板支撑件的一或更多功率电极。较低的处理压力、较低的处理温度、较高的功率以及基板水平等离子体(通过与基板支撑件的功率电极电容耦合形成的等离子体)中的各者或组合，增加沉积期间基板表面处的离子能量，这导致当与传统沉积方法比较时sp3含量(类金刚石碳)对sp2含量(类石墨碳)为所希望的较高比率的非晶碳层。因为得到较高的sp3含量，所以当与传统地沉积的非晶碳层比较时，此处所述的方法提供具有改良的密度、硬度、透明度、蚀刻选择性及膜应力的非晶碳层。
图1根据一个实施例，为用以实践此处所提及的方法的示例性处理腔室的示意性剖视图。可用以实践此处所述的方法的其他示例性处理腔室包括从美国加利福尼亚州圣克拉拉市的应用材料公司可取得的
Figure BDA0002715326100000031
Figure BDA0002715326100000032
及
Figure BDA0002715326100000033
处理腔室，以及来自其他制造商的适合的沉积腔室。
处理腔室100包括腔室盖组件101、一或更多侧壁102及腔室底座104。腔室盖组件101包括腔室盖106、安置于腔室盖106中且电气耦合至腔室盖106的喷淋头107、及安置于腔室盖106与一或更多侧壁102之间的电气绝缘环108。喷淋头107、一或更多侧壁102及腔室底座104一起限定处理容积105。穿过腔室盖106安置的气体入口109流体耦合至气源110。具有穿过其安置的多个开口111的喷淋头107用以从气源110均匀分配处理气体至处理容积105中。此处，腔室盖组件101，且因此喷淋头107，电气耦合至接地。在其他实施例中，腔室盖组件101，及因此安置于其中的喷淋头107，电气耦合至功率供应器(未显示)，例如连续波(CW)RF功率供应器、脉冲RF功率供应器、DC功率供应器、脉冲DC功率供应器、或它们的组合，所述功率供应器输送一或更多偏压至腔室盖组件101且因此至喷淋头107。在其他实施例中，处理腔室100不包括喷淋头107，且处理气体通过经由腔室盖106或一或更多侧壁102安置的一或更多气体入口而输送至处理容积105。
此处，处理容积105通过真空出口114流体耦合至真空源，例如流体耦合至一或更多专用真空泵，这维持处理容积105在次大气压条件下且从中排空处理气体及其他气体。安置于处理容积105中的基板支撑件115被安置在可移动支撑杆116上，可移动支撑杆116密封地延伸穿过腔室底座104，例如在腔室底座104下方的区域中由波纹管(未显示)环绕。此处，处理腔室100配置成促进基板117通过一或更多侧壁102之一者中的开口118往来于基板支撑件115的传送，此开口118在基板处理期间以门或阀门(未显示)密封。
通常，安置于基板支撑件115上的基板117使用加热器(例如，电阻加热元件119)及安置于基板支撑件115中的一或更多冷却通道120之一者或两者而维持在所欲处理温度下。一或更多冷却通道120流体耦合至冷却剂源(未显示)，例如具有相对高的电阻的修改的水源、或制冷剂源。
在某些实施例中，嵌在基板支撑件115的介电材料中或耦合至此的一或更多功率电极(未显示)经由匹配电路122耦合至一或更多RF或其他ac频率功率供应器，例如第一功率供应器121A及第二功率供应器121B。此处，沉积等离子体123通过将在处理容积105中的处理气体与一或更多功率电极之一者以从第一功率供应器121A输送至该一或更多功率电极之一者的ac功率电容耦合而在处理容积105中点燃并维持。在某些实施例中，沉积等离子体123通过与一或更多功率电极之一者以从第二功率供应器121B输送至该一或更多功率电极之一者的ac功率电容耦合而进一步维持。此处，第一功率供应器121A及第二功率供应器121B的各者输送具有介于约350kHz与约100MHz之间的频率的ac功率，其中来自第一功率供应器121A的功率的频率不同于来自第二功率供应器121B的频率。
图2根据一个实施例，为在基板的表面上沉积非晶碳层的方法的流程图。在动作201处，方法200包括将基板定位在基板支撑件上。此处，基板支撑件安置于处理腔室(例如在图1中所述的处理腔室100)的处理容积中。在动作202处，方法200包括使处理气体流至处理容积中。通常，处理气体包括：碳源气体，例如碳氢化合物气体，举例而言CH4、C2H2、C3H8、C4H10、C2H4、C3H6、C4H8及C5H10，或它们的组合；及稀释气体，举例而言惰性气体，例如Ar、He、Ne、Kr或Xe，或它们的组合。在某些实施例中，稀释气体包含惰性气体、N2、H2，或它们的组合。在某些实施例中，碳氢化合物气体对稀释气体的流率的比率(以下称比率)介于约1：10与约10：1之间，例如介于约1：5与约5：1之间。举例而言，在一个实施例中，C2H2对He的比率介于约1：3与约3：1之间。在某些实施例中，稀释气体包含H2，且H2与碳源气体之间的比率介于约0.5：1与约1：10之间，例如介于约1：1与约1：5之间。在动作203处，方法200包括将处理容积维持在介于约0.1mTorr与约100mTorr之间的处理压力下，例如介于约0.1mTorr与约50mTorr之间、介于约0.1mTorr与约30mTorr之间、介于约0.1mTorr与约20mTorr之间、介于约0.1mTorr与约15mTorr之间，举例而言介于约0.1mTorr与约10mTorr之间，或小于约100mTorr、小于约50mTorr、小于约20mTorr、小于约15mTorr，举例而言约小于约10mTorr。
在动作203处，方法200包括通过施加第一功率至处理腔室的一或更多功率电极之一者来点燃并维持处理气体的沉积等离子体。此处，一或更多功率电极为一或更多顶部电极(例如，处理腔室的腔室盖或安置于腔室盖中的喷淋头)、一或更多侧电极(例如，处理腔室的一或更多侧壁)之一者，或为基板支撑件的部分(例如，嵌在基板支撑件的介电材料中或耦合至基板支撑件的介电材料的一或更多电极)。通常，对于尺寸设计成处理300mm直径的基板的处理腔室而言，第一功率为介于约500W与约8kW之间，例如介于约1000W与约5kW之间。适当的规模可用于经尺寸设计成处理不同尺寸的基板的处理腔室。
在某些实施例中，一或更多功率电极为嵌在基板支撑件的介电材料中或耦合至基板支撑件的介电材料的一者或组合。在某些实施例中，第一功率为RF或其他ac频率功率，在基板支撑件的基板接收表面每cm2介于约0.7W与约11.3W之间，此处称W/cm2，例如介于约1.4W/cm2与约7.1W/cm2之间，或对于具有经尺寸设计成支撑300mm直径的基板的基板支撑表面的基板支撑件而言介于约500W与约5kW之间，例如介于约1000W与约5kW之间。
在某些实施例中，方法200进一步包括施加第二功率至一或更多功率电极之一者，其中第二功率为RF或其他ac频率功率，介于约0.14W/cm2与约7.1W/cm2之间，例如介于约0.14W/cm2与约3.5W/cm2之间，或对于具有经尺寸设计成支撑300mm直径的基板的基板支撑表面的基板支撑件而言介于约100W与约5kW之间，例如介于约100W与约2.5kW之间。此处，第二功率的频率不同于第一功率的频率。通常，第一功率及第二功率之一者或两者的频率为介于约350kHz与约100MHz之间，例如约350KHz、约2MHz、约13.56MHz、约27MHz、约40MHz、约60MHz、以及约100MHz。在某些实施例中，第一功率及第二功率被施加至彼此电气绝缘的不同功率电极，举例而言嵌在基板支撑件的介电材料中且通过该介电材料彼此绝缘的双功率电极。在某些实施例中，第一功率及第二功率使用传统阻抗匹配电路施加至相同的功率电极。
在动作204处，方法200包括将基板支撑件且因此安置于其上的基板维持在介于约-50℃与约350℃之间的温度下，例如介于约-50℃与约150℃之间、介于约-50℃与约100℃之间或介于约-50℃与约50℃之间，举例而言介于约-25℃与约25℃之间，或小于约350℃的温度，诸如小于约200℃、小于约150℃，或小于100℃，举例而言小于约50℃。
在动作205及206处，方法200分别包括将基板的表面暴露至沉积等离子体，以及在基板的表面上沉积非晶碳层。
图3根据一个实施例，图示根据图2中提及的方法所沉积的碳硬掩模。在图3中，碳硬掩模303，此处为图案化碳硬掩模，包括非晶碳层302，非晶碳层302具有在其中形成的多个开口304，且被安置在基板300的待图案化表面上。通常，基板300或其一或更多材料层由结晶硅、氧化硅、氮氧化硅、氮化硅、应变硅、硅锗、钨、氮化钛、掺杂或未掺杂的多晶硅、碳掺杂的氧化硅、氮化硅、掺杂的硅、锗、砷化镓、玻璃、蓝宝石及低k介电材料之一者或组合而形成。
此处，非晶碳层具有：介于约
Figure BDA0002715326100000071
与约
Figure BDA0002715326100000072
之间的厚度，例如介于约
Figure BDA0002715326100000073
与约
Figure BDA0002715326100000074
之间，举例而言介于约
Figure BDA0002715326100000075
与约
Figure BDA0002715326100000076
之间；大于约1.8g/cm3的密度；大于约50GPa的杨氏模量；以及在约633nm的波长下小于约0.15的吸收系数(光学K)。在某些实施例中，非晶碳层具有小于约500MPa的拉伸或压缩膜应力。在某些实施例中，非晶碳层具有小于约500MPa的拉伸膜应力。在某些实施例中，开口304的各者具有大于约2：1的深宽比(高度对宽度)，例如大于约3：1、大于约4：1、大于约5：1、大于约6：1、大于约7：1、大于约8：1、大于约9：1，举例而言大于约10：1。
此处所述的方法提供非晶碳层，及由此形成的碳硬掩模，当与传统地沉积的非晶碳层比较时具有改良的密度、硬度、透明度、蚀刻选择性及应力。再者，此处所述的方法意图与目前的碳硬掩模工艺整合方案兼容，意味着将方法引入现有装置制造线将无须在相关的上游或下游处理方法或装备中作实质改变。
尽管以上针对的是本公开的实施例，但可衍生本公开的其他及进一步实施例而不会悖离其基本范围，且其范围通过以下权利要求来决定。

Claims (15)

1.一种处理基板的方法，包含以下步骤：
将基板定位在基板支撑件上，所述基板支撑件安置于处理腔室的处理容积中；
使包含碳氢化合物气体及稀释气体的处理气体流至所述处理容积中；
将所述处理容积维持在小于约100mTorr的处理压力下；
通过施加第一功率至所述处理腔室的一或更多功率电极之一者，点燃并维持所述处理气体的沉积等离子体；
将所述基板支撑件维持在小于约350℃的处理温度下；
将所述基板的表面暴露至所述沉积等离子体；及
在所述基板的所述表面上沉积非晶碳层。
2.如权利要求1所述的方法，其中沉积的所述非晶碳层具有大于约1.8g/cm3的密度。
3.如权利要求1所述的方法，其中沉积的所述非晶碳层具有大于约50GPa的杨氏模量。
4.如权利要求1所述的方法，其中沉积的所述非晶碳层具有小于约500MPa的膜应力。
5.如权利要求1所述的方法，其中沉积的所述非晶碳层在约633nm的波长下具有小于约0.15的吸收系数(光学K)。
6.如权利要求1所述的方法，其中沉积的所述非晶碳层具有大于约1.8g/cm3的密度、大于约50GPa的杨氏模量、小于约500MPa的膜应力、且在约633nm的波长下具有小于约0.15的吸收系数(光学K)。
7.如权利要求1所述的方法，其中所述碳氢化合物气体包含CH4、C2H2、C3H8、C4H10、C2H4、C3H6、C4H8、C5H10、或它们的组合中的一者。
8.如权利要求7所述的方法，其中所述处理温度小于约100℃。
9.如权利要求8所述的方法，其中所述第一功率为ac功率、在所述基板支撑件的基板接收表面每cm2介于约0.7W与约11.3W之间，其中所述第一功率具有介于约350kHz与约100MHz之间的频率。
10.如权利要求9所述的方法，进一步包含以下步骤：施加第二功率至所述一或更多功率电极之一者，其中所述第二功率为ac功率、在所述基板支撑件的所述基板接收表面每cm2介于约0.14W与约11.3W之间，其中所述第二功率具有介于约350kHz与约100MHz之间的频率，且其中所述第一功率的频率不同于所述第二功率的频率。
11.一种处理基板的方法，包含以下步骤：
将基板定位在基板支撑件上，所述基板支撑件安置于处理腔室的处理容积中；
使包含碳氢化合物气体及稀释气体的处理气体流至所述处理容积中，其中所述碳氢化合物气体包含CH4、C2H2、C3H8、C4H10、C2H4、C3H6、C4H8、C5H10、或它们的组合中的一者；
将所述处理容积维持在小于约20mTorr的处理压力下；
通过施加第一ac功率至所述基板支撑件的一或更多功率电极之一者，点燃并维持所述处理气体的沉积等离子体，其中所述第一ac功率在所述基板支撑件的基板接收表面每cm2介于约0.7W与约15W之间；
将所述基板支撑件维持在小于约100℃的处理温度下；
将所述基板的表面暴露至所述沉积等离子体；及
在所述基板的所述表面上沉积非晶碳层。
12.如权利要求11所述的方法，其中所述稀释气体包含H2，且其中所述处理气体中所述H2对碳氢化合物气体的比率介于约0.5：1与约1：10之间。
13.如权利要求11所述的方法，进一步包含以下步骤：施加第二ac功率至所述基板支撑件的所述一或更多功率电极之一者，其中所述第二ac功率、在所述基板支撑件的所述基板接收表面每cm2介于约0.14W与约7.1W之间，其中所述第一ac功率与所述第二ac功率各自具有介于约350kHz与约100MHz之间的频率，且其中所述第一ac功率的频率不同于所述第二ac功率的。
14.一种碳硬掩模，包括：
非晶碳层，安置于基板的表面上，其中所述非晶碳层具有大于约1.8g/cm3的密度、大于约50GPa的杨氏模量、小于约500MPa的膜应力、且在约633nm的波长下具有小于约0.15的吸收系数(光学K)。
15.如权利要求14所述的碳硬掩模，其中所述非晶碳层具有穿过其形成的多个开口，且其中所述多个开口的各者具有大于约2：1的高度对宽度比率。
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