TWD226530S - Target for a physical vapor deposition chamber - Google Patents

Target for a physical vapor deposition chamber Download PDF

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Publication number
TWD226530S
TWD226530S TW110305890F TW110305890F TWD226530S TW D226530 S TWD226530 S TW D226530S TW 110305890 F TW110305890 F TW 110305890F TW 110305890 F TW110305890 F TW 110305890F TW D226530 S TWD226530 S TW D226530S
Authority
TW
Taiwan
Prior art keywords
target
vapor deposition
physical vapor
deposition chamber
design
Prior art date
Application number
TW110305890F
Other languages
Chinese (zh)
Inventor
大衛 鞏特爾
基倫古莫妮拉珊卓拉 沙芬戴亞
宋佼
瑪丹庫瑪 席莫卡麥拉瑞帕
崔玥
陳彥竹
吳夢雪
Original Assignee
美商應用材料股份有限公司
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Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TWD226530S publication Critical patent/TWD226530S/en

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Abstract

【物品用途】;略。;【設計說明】;圖式所揭露之虛線部分,為本案不主張設計之部分。[Use of item]; omitted. ;[Design Description];The dotted line portion disclosed in the drawing is the part of this case that does not require design.

Description

用於物理氣相沉積腔室的靶材 Targets for Physical Vapor Deposition Chambers

圖式所揭露之虛線部分,為本案不主張設計之部分。 The dotted line part disclosed in the drawing is the part not claimed in this case.

TW110305890F 2021-05-07 2021-11-01 Target for a physical vapor deposition chamber TWD226530S (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29/782,632 USD1007449S1 (en) 2021-05-07 2021-05-07 Target profile for a physical vapor deposition chamber target
US29/782,632 2021-05-07

Publications (1)

Publication Number Publication Date
TWD226530S true TWD226530S (en) 2023-07-21

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TW110305890F TWD226530S (en) 2021-05-07 2021-11-01 Target for a physical vapor deposition chamber

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US (1) USD1007449S1 (en)
JP (2) JP1718363S (en)
TW (1) TWD226530S (en)

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TWD202101S (en) 2018-03-09 2020-01-11 美商應用材料股份有限公司 Target profile for a physical vapor deposition chamber target

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JP1718363S (en) 2022-06-28
USD1007449S1 (en) 2023-12-12
JP1730204S (en) 2022-11-18

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