TWD217597S - Sputtering target for a physical vapor deposition chamber - Google Patents

Sputtering target for a physical vapor deposition chamber Download PDF

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Publication number
TWD217597S
TWD217597S TW110301789F TW110301789F TWD217597S TW D217597 S TWD217597 S TW D217597S TW 110301789 F TW110301789 F TW 110301789F TW 110301789 F TW110301789 F TW 110301789F TW D217597 S TWD217597 S TW D217597S
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TW
Taiwan
Prior art keywords
vapor deposition
physical vapor
sputtering target
deposition chamber
design
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TW110301789F
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Chinese (zh)
Inventor
基倫古莫妮拉珊卓拉 沙芬戴亞
大衛 鞏特爾
紹杰 許
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美商應用材料股份有限公司
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Publication of TWD217597S publication Critical patent/TWD217597S/en

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Abstract

【物品用途】;本設計係關於用於物理氣相沉積腔室的濺射靶之外觀設計。;【設計說明】;圖式所揭露之虛線部分，為本案不主張設計之部分。【Use of article】;This design is about the appearance design of a sputtering target used in a physical vapor deposition chamber. ;[Design Description];The dotted line portion disclosed in the drawing is the part of this case that does not require design.

Description

用於物理氣相沉積腔室的濺射靶 Sputtering Targets for Physical Vapor Deposition Chambers

本設計係關於用於物理氣相沉積腔室的濺射靶之外觀設計。 This design is about the appearance design of sputtering targets used in physical vapor deposition chambers.

圖式所揭露之虛線部分，為本案不主張設計之部分。 The dotted line part disclosed in the drawings is the part that does not claim design in this case.

TW110301789F 2019-08-26 2020-02-14 Sputtering target for a physical vapor deposition chamber TWD217597S (en)

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US29/703,194 2019-08-26
US29/703,194 USD908645S1 (en) 2019-08-26 2019-08-26 Sputtering target for a physical vapor deposition chamber

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TWD217597S true TWD217597S (en) 2022-03-11

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TW110301789F TWD217597S (en) 2019-08-26 2020-02-14 Sputtering target for a physical vapor deposition chamber
TW109300686F TWD214766S (en) 2019-08-26 2020-02-14 Sputtering target for a physical vapor deposition chamber

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USD908645S1 (en) 2021-01-26

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