TWD214766S - Sputtering target for a physical vapor deposition chamber - Google Patents

Sputtering target for a physical vapor deposition chamber Download PDF

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Publication number
TWD214766S
TWD214766S TW109300686F TW109300686F TWD214766S TW D214766 S TWD214766 S TW D214766S TW 109300686 F TW109300686 F TW 109300686F TW 109300686 F TW109300686 F TW 109300686F TW D214766 S TWD214766 S TW D214766S
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TW
Taiwan
Prior art keywords
vapor deposition
sputtering target
physical vapor
deposition chamber
design
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TW109300686F
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Chinese (zh)
Inventor
基倫古莫妮拉珊卓拉 沙芬戴亞
大衛 鞏特爾
紹杰 許
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美商應用材料股份有限公司
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Publication of TWD214766S publication Critical patent/TWD214766S/en

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Abstract

【物品用途】;本設計係關於用於物理氣相沉積腔室的濺射靶之外觀設計。;【設計說明】;圖式所揭露之虛線部分，為本案不主張設計之部分。[Use of article]; This design is about the appearance design of a sputtering target used in a physical vapor deposition chamber. ;[Design Description];The dotted line portion disclosed in the drawing is the part of this case that does not require design.

Description

用於物理氣相沉積腔室的濺射靶 Sputtering target for physical vapor deposition chamber

本設計係關於用於物理氣相沉積腔室的濺射靶之外觀設計。 This design is about the appearance design of the sputtering target used in the physical vapor deposition chamber.

圖式所揭露之虛線部分，為本案不主張設計之部分。 The dotted line exposed in the diagram is a part of this case that does not advocate design.

TW109300686F 2019-08-26 2020-02-14 Sputtering target for a physical vapor deposition chamber TWD214766S (en)

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US29/703,194 USD908645S1 (en) 2019-08-26 2019-08-26 Sputtering target for a physical vapor deposition chamber
US29/703,194 2019-08-26

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TWD214766S true TWD214766S (en) 2021-10-21

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TW110301789F TWD217597S (en) 2019-08-26 2020-02-14 Sputtering target for a physical vapor deposition chamber
TW109300686F TWD214766S (en) 2019-08-26 2020-02-14 Sputtering target for a physical vapor deposition chamber

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