TWD202101S - 用於物理氣相沉積腔室靶材的靶材輪廓 - Google Patents

用於物理氣相沉積腔室靶材的靶材輪廓 Download PDF

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Publication number
TWD202101S
TWD202101S TW107305358F TW107305358F TWD202101S TW D202101 S TWD202101 S TW D202101S TW 107305358 F TW107305358 F TW 107305358F TW 107305358 F TW107305358 F TW 107305358F TW D202101 S TWD202101 S TW D202101S
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Taiwan
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target
vapor deposition
physical vapor
deposition chamber
profile
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TW107305358F
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English (en)
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威廉Ｒ 喬韓森
基倫古莫妮拉珊卓拉 沙芬戴亞
布拉尚普拉巴卡 卜拉布
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美商應用材料股份有限公司
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Publication of TWD202101S publication Critical patent/TWD202101S/zh

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Abstract

【物品用途】;本設計所請求為用於物理氣相沉積腔室的靶材。;【設計說明】;9-9剖面圖為仰視圖中之9-9剖面示意圖。

Description

用於物理氣相沉積腔室靶材的靶材輪廓
本設計所請求為用於物理氣相沉積腔室的靶材。
9-9剖面圖為仰視圖中之9-9剖面示意圖。
TW107305358F 2018-03-09 2018-09-10 用於物理氣相沉積腔室靶材的靶材輪廓 TWD202101S (zh)

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US29/639,953 2018-03-09
US29/639,953 USD877101S1 (en) 2018-03-09 2018-03-09 Target profile for a physical vapor deposition chamber target

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TWD202101S true TWD202101S (zh) 2020-01-11

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TW107305358F TWD202101S (zh) 2018-03-09 2018-09-10 用於物理氣相沉積腔室靶材的靶材輪廓
TW108303594F TWD203691S (zh) 2018-03-09 2018-09-10 用於物理氣相沉積腔室靶材的靶材輪廓

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TWD203691S (zh) 2020-04-01
USD877101S1 (en) 2020-03-03
JP1640252S (zh) 2019-09-02
JP1651699S (zh) 2020-01-27
USD902165S1 (en) 2020-11-17

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