TWD212933S - 用於處理腔室基板支撐件的基底板 - Google Patents

用於處理腔室基板支撐件的基底板 Download PDF

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Publication number
TWD212933S
TWD212933S TW108308059F TW108308059F TWD212933S TW D212933 S TWD212933 S TW D212933S TW 108308059 F TW108308059 F TW 108308059F TW 108308059 F TW108308059 F TW 108308059F TW D212933 S TWD212933 S TW D212933S
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Taiwan
Prior art keywords
base plate
processing chamber
sectional
cross
chamber substrate
Prior art date
Application number
TW108308059F
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English (en)
Inventor
席夏尤吉許 勞
慕昆德 桑達拉拉珍
振雄 蔡
曼裘那薩P 高帕
史蒂芬 珊索尼
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TWD212933S publication Critical patent/TWD212933S/zh

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Abstract

【物品用途】;本設計請求具有視覺效果之用於處理腔室基板支撐件的基底板。;【設計說明】;圖式所揭露之虛線部分,為本案不主張設計之部分。;剖面視圖為俯視圖中依據9-9之截線所取之剖面圖。;另一剖面視圖為俯視圖中依據10-10之截線所取之剖面圖。

Description

用於處理腔室基板支撐件的基底板
本設計請求具有視覺效果之用於處理腔室基板支撐件的基底板。
圖式所揭露之虛線部分,為本案不主張設計之部分。
剖面視圖為俯視圖中依據9-9之截線所取之剖面圖。
另一剖面視圖為俯視圖中依據10-10之截線所取之剖面圖。
TW108308059F 2019-06-28 2019-12-27 用於處理腔室基板支撐件的基底板 TWD212933S (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29/696,587 USD893441S1 (en) 2019-06-28 2019-06-28 Base plate for a processing chamber substrate support
US29/696,587 2019-06-28

Publications (1)

Publication Number Publication Date
TWD212933S true TWD212933S (zh) 2021-08-01

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TW108308059F TWD212933S (zh) 2019-06-28 2019-12-27 用於處理腔室基板支撐件的基底板
TW108308059D01F TWD214516S (zh) 2019-06-28 2019-12-27 用於處理腔室基板支撐件的基底板

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TW108308059D01F TWD214516S (zh) 2019-06-28 2019-12-27 用於處理腔室基板支撐件的基底板

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US (1) USD893441S1 (zh)
JP (2) JP1679911S (zh)
TW (2) TWD212933S (zh)

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US11551960B2 (en) 2020-01-30 2023-01-10 Applied Materials, Inc. Helical plug for reduction or prevention of arcing in a substrate support
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD947914S1 (en) * 2020-11-23 2022-04-05 Applied Materials, Inc. Base plate for a processing chamber substrate support
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
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USD893441S1 (en) 2020-08-18
JP1679911S (zh) 2021-02-22
JP1679836S (zh) 2021-02-22
TWD214516S (zh) 2021-10-11

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