TW497255B - Semiconductor device and method for making the same - Google Patents

Semiconductor device and method for making the same Download PDF

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Publication number
TW497255B
TW497255B TW090101415A TW90101415A TW497255B TW 497255 B TW497255 B TW 497255B TW 090101415 A TW090101415 A TW 090101415A TW 90101415 A TW90101415 A TW 90101415A TW 497255 B TW497255 B TW 497255B
Authority
TW
Taiwan
Prior art keywords
film
electrode
forming
conductive material
manufacturing
Prior art date
Application number
TW090101415A
Other languages
English (en)
Chinese (zh)
Inventor
Yuichi Matsui
Masahiko Hiratani
Yasuhiro Shimamoto
Yoshitaka Nakamura
Toshihide Nabatame
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW497255B publication Critical patent/TW497255B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
TW090101415A 2000-01-26 2001-01-20 Semiconductor device and method for making the same TW497255B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000021758A JP3976462B2 (ja) 2000-01-26 2000-01-26 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW497255B true TW497255B (en) 2002-08-01

Family

ID=18548127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090101415A TW497255B (en) 2000-01-26 2001-01-20 Semiconductor device and method for making the same

Country Status (4)

Country Link
US (4) US6503791B2 (https=)
JP (1) JP3976462B2 (https=)
KR (1) KR100737192B1 (https=)
TW (1) TW497255B (https=)

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Also Published As

Publication number Publication date
US20010023955A1 (en) 2001-09-27
KR20010083146A (ko) 2001-08-31
US6521494B2 (en) 2003-02-18
US20020192896A1 (en) 2002-12-19
JP3976462B2 (ja) 2007-09-19
US6555429B2 (en) 2003-04-29
JP2001210802A (ja) 2001-08-03
US6483143B2 (en) 2002-11-19
US20010026988A1 (en) 2001-10-04
US6503791B2 (en) 2003-01-07
US20020030210A1 (en) 2002-03-14
KR100737192B1 (ko) 2007-07-10

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