TW477067B - Semiconductor device, method of manufacturing the same and method of arranging dummy region - Google Patents
Semiconductor device, method of manufacturing the same and method of arranging dummy region Download PDFInfo
- Publication number
- TW477067B TW477067B TW089125596A TW89125596A TW477067B TW 477067 B TW477067 B TW 477067B TW 089125596 A TW089125596 A TW 089125596A TW 89125596 A TW89125596 A TW 89125596A TW 477067 B TW477067 B TW 477067B
- Authority
- TW
- Taiwan
- Prior art keywords
- dummy
- insulating film
- area
- semiconductor layer
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims description 57
- 230000002093 peripheral effect Effects 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 53
- 238000009413 insulation Methods 0.000 claims description 43
- 238000000926 separation method Methods 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 27
- 230000005684 electric field Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 61
- 229910052710 silicon Inorganic materials 0.000 abstract description 61
- 239000010703 silicon Substances 0.000 abstract description 61
- 230000007547 defect Effects 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 230
- 239000010410 layer Substances 0.000 description 148
- 230000004913 activation Effects 0.000 description 46
- 239000011229 interlayer Substances 0.000 description 28
- 239000004575 stone Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000007667 floating Methods 0.000 description 16
- 230000006870 function Effects 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 13
- 230000000873 masking effect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 206010001497 Agitation Diseases 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- HSRJKNPTNIJEKV-UHFFFAOYSA-N Guaifenesin Chemical compound COC1=CC=CC=C1OCC(O)CO HSRJKNPTNIJEKV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000233494 Lithophyllum Species 0.000 description 1
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 229910012990 NiSi2 Inorganic materials 0.000 description 1
- 229910004217 TaSi2 Inorganic materials 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000575 pesticide Substances 0.000 description 1
- 239000003348 petrochemical agent Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910021354 zirconium(IV) silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000100437A JP4698793B2 (ja) | 2000-04-03 | 2000-04-03 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW477067B true TW477067B (en) | 2002-02-21 |
Family
ID=18614644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089125596A TW477067B (en) | 2000-04-03 | 2000-12-01 | Semiconductor device, method of manufacturing the same and method of arranging dummy region |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6455894B1 (https=) |
| JP (1) | JP4698793B2 (https=) |
| KR (1) | KR100373287B1 (https=) |
| DE (1) | DE10059620A1 (https=) |
| FR (1) | FR2807211B1 (https=) |
| TW (1) | TW477067B (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002158359A (ja) * | 2000-11-21 | 2002-05-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP3719650B2 (ja) * | 2000-12-22 | 2005-11-24 | 松下電器産業株式会社 | 半導体装置 |
| US6787422B2 (en) * | 2001-01-08 | 2004-09-07 | Chartered Semiconductor Manufacturing Ltd. | Method of body contact for SOI mosfet |
| JP2002208705A (ja) | 2001-01-09 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2002246600A (ja) * | 2001-02-13 | 2002-08-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| KR100366923B1 (ko) * | 2001-02-19 | 2003-01-06 | 삼성전자 주식회사 | 에스오아이 기판 및 이의 제조방법 |
| US6830976B2 (en) | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
| KR100422468B1 (ko) * | 2001-07-31 | 2004-03-11 | 삼성전자주식회사 | 에스 오 아이 소자 및 그 제조방법 |
| US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| AU2003247513A1 (en) | 2002-06-10 | 2003-12-22 | Amberwave Systems Corporation | Growing source and drain elements by selecive epitaxy |
| US6982474B2 (en) | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
| KR100897474B1 (ko) * | 2002-06-29 | 2009-05-14 | 매그나칩 반도체 유한회사 | 바이폴라 트랜지스터의 제조방법 |
| WO2004081982A2 (en) * | 2003-03-07 | 2004-09-23 | Amberwave Systems Corporation | Shallow trench isolation process |
| JP4371710B2 (ja) * | 2003-06-09 | 2009-11-25 | キヤノン株式会社 | 半導体基体、半導体装置及びこれらの製造方法 |
| JP4651920B2 (ja) * | 2003-07-15 | 2011-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4561060B2 (ja) * | 2003-07-28 | 2010-10-13 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US6930351B2 (en) | 2003-08-14 | 2005-08-16 | Renesas Technology Corp. | Semiconductor device with dummy gate electrode |
| US20050056881A1 (en) * | 2003-09-15 | 2005-03-17 | Yee-Chia Yeo | Dummy pattern for silicide gate electrode |
| US7109532B1 (en) * | 2003-12-23 | 2006-09-19 | Lee Zachary K | High Ion/Ioff SOI MOSFET using body voltage control |
| DE102004048096A1 (de) * | 2004-09-30 | 2006-04-27 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur |
| JP5172083B2 (ja) * | 2004-10-18 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法、並びにメモリ回路 |
| US7883979B2 (en) * | 2004-10-26 | 2011-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing a semiconductor device with reduced floating body effect |
| US20060091423A1 (en) * | 2004-10-29 | 2006-05-04 | Peter Poechmueller | Layer fill for homogenous technology processing |
| KR100641555B1 (ko) * | 2004-12-30 | 2006-10-31 | 동부일렉트로닉스 주식회사 | 트랜치 소스 구조를 갖는 수평형 디모스 트랜지스터 |
| JP5091462B2 (ja) * | 2006-01-19 | 2012-12-05 | パナソニック株式会社 | セルおよび半導体装置 |
| US20090087956A1 (en) * | 2007-09-27 | 2009-04-02 | Texas Instruments Incorporated | Dummy Contact Fill to Improve Post Contact Chemical Mechanical Polish Topography |
| KR100967037B1 (ko) * | 2007-10-17 | 2010-06-29 | 주식회사 하이닉스반도체 | 퓨즈 박스 및 그 형성 방법 |
| US7880229B2 (en) * | 2007-10-18 | 2011-02-01 | Globalfoundries Inc. | Body tie test structure for accurate body effect measurement |
| US7994577B2 (en) * | 2008-07-18 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD protection structures on SOI substrates |
| CN101872737A (zh) * | 2010-01-28 | 2010-10-27 | 中国科学院上海微系统与信息技术研究所 | 一种抑制soi浮体效应的mos结构及其制作方法 |
| US8598656B2 (en) * | 2010-03-08 | 2013-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus of forming ESD protection device |
| KR101804420B1 (ko) * | 2010-06-14 | 2018-01-11 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| US8217464B2 (en) * | 2010-08-06 | 2012-07-10 | Altera Corporation | N-well/P-well strap structures |
| JP2011146733A (ja) * | 2011-03-18 | 2011-07-28 | Renesas Electronics Corp | 半導体装置の製造方法 |
| US8765607B2 (en) * | 2011-06-01 | 2014-07-01 | Freescale Semiconductor, Inc. | Active tiling placement for improved latch-up immunity |
| US8796855B2 (en) | 2012-01-13 | 2014-08-05 | Freescale Semiconductor, Inc. | Semiconductor devices with nonconductive vias |
| US9143123B2 (en) * | 2012-07-10 | 2015-09-22 | Infineon Technologies Ag | RF switch, mobile communication device and method for switching an RF signal |
| CN105633134B (zh) * | 2014-10-28 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | 半导体栅极版图及其修正方法、半导体结构形成方法 |
| FR3036846B1 (fr) * | 2015-05-29 | 2018-06-15 | Stmicroelectronics (Crolles 2) Sas | Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant |
| KR102420539B1 (ko) * | 2015-08-26 | 2022-07-14 | 에스케이하이닉스 주식회사 | 반도체 장치 |
| US10249621B2 (en) * | 2016-12-15 | 2019-04-02 | Texas Instruments Incorporated | Dummy contacts to mitigate plasma charging damage to gate dielectrics |
| KR101927667B1 (ko) * | 2018-03-15 | 2018-12-10 | 한국과학기술원 | 단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 단위 모스펫 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463238A (en) * | 1992-02-25 | 1995-10-31 | Seiko Instruments Inc. | CMOS structure with parasitic channel prevention |
| JPH0832039A (ja) | 1994-07-12 | 1996-02-02 | Nippondenso Co Ltd | 半導体装置およびその製造方法 |
| US5910017A (en) * | 1996-02-21 | 1999-06-08 | Texas Instruments Incorporated | Increasing uniformity in a refill layer thickness for a semiconductor device |
| US5767549A (en) * | 1996-07-03 | 1998-06-16 | International Business Machines Corporation | SOI CMOS structure |
| JPH1041406A (ja) * | 1996-07-18 | 1998-02-13 | Mitsubishi Electric Corp | 半導体装置 |
| DE69738012T2 (de) * | 1996-11-26 | 2007-12-13 | Matsushita Electric Industrial Co., Ltd., Kadoma | Halbleitervorrichtung und deren Herstellungsverfahren |
| JP3648343B2 (ja) * | 1997-01-14 | 2005-05-18 | 株式会社東芝 | 半導体装置 |
| JP3371756B2 (ja) | 1997-05-16 | 2003-01-27 | 株式会社デンソー | 半導体基板の製造方法 |
| JPH1154758A (ja) * | 1997-08-01 | 1999-02-26 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JPH11204801A (ja) * | 1997-11-13 | 1999-07-30 | Seiko Epson Corp | 半導体装置 |
| JP4158219B2 (ja) * | 1998-02-27 | 2008-10-01 | 株式会社デンソー | 半導体装置の製造方法 |
| US6020616A (en) * | 1998-03-31 | 2000-02-01 | Vlsi Technology, Inc. | Automated design of on-chip capacitive structures for suppressing inductive noise |
| JPH11317528A (ja) * | 1998-05-07 | 1999-11-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| KR100296130B1 (ko) * | 1998-06-29 | 2001-08-07 | 박종섭 | 이중막 실리콘웨이퍼를 이용한 금속-산화막-반도체 전계효과트랜지스터 제조방법 |
| KR100272166B1 (ko) * | 1998-06-30 | 2000-11-15 | 윤종용 | 소자분리영역에 형성된 더미 도전층을 갖춘반도체소자 및 그제조방법 |
| JP4540146B2 (ja) * | 1998-12-24 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2000216388A (ja) * | 1999-01-21 | 2000-08-04 | Mitsubishi Electric Corp | 半導体装置 |
| JP2001077368A (ja) * | 1999-09-03 | 2001-03-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6281593B1 (en) * | 1999-12-06 | 2001-08-28 | International Business Machines Corporation | SOI MOSFET body contact and method of fabrication |
-
2000
- 2000-04-03 JP JP2000100437A patent/JP4698793B2/ja not_active Expired - Fee Related
- 2000-10-03 US US09/677,881 patent/US6455894B1/en not_active Expired - Fee Related
- 2000-11-15 FR FR0014712A patent/FR2807211B1/fr not_active Expired - Fee Related
- 2000-12-01 TW TW089125596A patent/TW477067B/zh not_active IP Right Cessation
- 2000-12-01 DE DE10059620A patent/DE10059620A1/de not_active Ceased
- 2000-12-02 KR KR10-2000-0072678A patent/KR100373287B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6455894B1 (en) | 2002-09-24 |
| FR2807211A1 (fr) | 2001-10-05 |
| DE10059620A1 (de) | 2001-10-18 |
| JP4698793B2 (ja) | 2011-06-08 |
| JP2001284599A (ja) | 2001-10-12 |
| FR2807211B1 (fr) | 2004-12-17 |
| KR100373287B1 (ko) | 2003-02-25 |
| KR20010096517A (ko) | 2001-11-07 |
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