TW200847428A - Low on-resistance lateral-double diffused transistor and fabrication method of the same - Google Patents

Abstract

A lateral-double diffused MOS (LDMOS) device is provided. The device includes a first well having a first conductive type and a second well having a second conductive type located in a substrate and adjacent each other; a drain and a source regions having the first conductive type located in the first and the second wells, respectively; a field oxide layer (FOX) located in the substrate between the source and drain regions; a gate conductive layer over the second well between the source and drain regions and extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well under a portion of the gate conductive layer and the FOX and contacting to the drain region, wherein a channel is defined in the second well between the doped region and the source region.

Description

200847428 FV6UU2/23687twf.doc/p IX. Description of the Invention: [Technical Field] The present invention relates to an integrated circuit and a method of fabricating the same, and more particularly to a laterally diffused MOS device and a method of fabricating the same . [Prior Art] Γ: 1. A laterally diffused metal oxide semiconductor (LDMOS) device is a typical piezoelectric device that can be integrated with a complementary MOS process to fabricate control, logic, and power switches on a single wafer. The LDM〇s component must have a high breakdown voltage (breakd〇wn v〇ltage) and a low on-state resistance (R〇n) when it is dropped. LDMOS components with high breakdown voltage and low (four) turn-on resistance have lower power in high voltage applications. In addition, the lower opening resistance allows the transistor to be in a saturated day: it has a sister 8 岐 current to increase the operating speed of the component. Loosely diffuse money semiconductor components and the extreme electric field and high and no electricity, the current will shape the money to bring the high energy of the slave to the breakdown of the dielectric :: and ^ the life of the piece. A typical type of laterally diffused MOS = piece, θ does not form a field oxide layer extremely, thereby increasing the life of the element. S: The formation of the oxide layer will lead to an increase in the opening resistance, resulting in saturation. [Inventive content] Copying ΐΐ Γ 疋 提供 提供 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向. There are flutes: a kind of lateral diffusion of gold oxide half components. The component includes a device, a battery, a well region, a second well region having a second conductivity type, a 200847428 P960027 23687 twf.d〇c/p (7) a power layer, a gate conductive layer, and a first conductive region. . The first well zone and the second well zone are adjacent to each other. ^^ is in the first well zone. The second change zone is located in the second well zone V=y pen layer, located in the second well zone between the source zone and the bungee zone. The well area = the third between the third doped region and the second doped region: the lateral diffusion of the half element, the doping concentration of the middle:: region is lower than the first doped region or the first The second doped region: The depth of the bottom of the horizontally doped region in the horizontally doped red table according to the embodiment of the present invention is from the surface of the substrate. &gt;_Zone The laterally expanded-conducting type according to the embodiment of the present invention is a Ν-type; the second conductive type is a ρ-type. </ RTI> wherein a plurality of oxide layers are disposed in the first doped region and the third doped region, in accordance with an embodiment of the present invention. - a portion between the miscellaneous regions 6 200847428 P960027 23687twf.doc/p The laterally diffused gold-oxygen semi-gate conductive layer according to an embodiment of the invention is more overlying the field oxide layer. In the transverse diffusion of the embodiment of the present invention, the second junction region is two: a component of which is a method of manufacturing a laterally diffused gold-oxide half element. In the substrate having the second conductivity type, the first well region and the second well region having the second conductivity type are formed, and the first conductive type doped region is formed in the first well region.镰:: an oxide layer in the impurity region. Then, a space is formed on the substrate; a gate electrode is formed on the partial field oxide layer; a source region of the -i II type is formed in the second well region outside the layer-side wall Zone, and in the first well region of the gate conductive layer, the other side wall is formed in the first well region of the polar region, and has a first conductivity type.

The step of forming the first-conducting type doped region and the field oxide layer in the process of forming the laterally-diffused gold-oxygen half-element according to the embodiment of the invention is the second=upper-shaped ΐ having the first-opening σ- The tantalum oxide layer and the mask layer form a surface of the base oxide layer of the field oxide layer. A photoresist layer having a second opening is then formed on the layer to expose the first two bare wires and a portion of the layer. The wire is formed in the first well region by a light-masking, second-order: ion implantation process. : In addition to the photoresist layer 're--local thermal oxidation process, = field oxide layer is formed in the exposed substrate. Thereafter, the mask layer is removed;; 200847428 F96UU27 23687twf.doc/p laterally diffused gold oxide half tree according to an embodiment of the invention

= method, the impurity concentration of the hat area is lower than the S 7 degree of the source area or the secret area. ^ $

a laterally diffused gold-oxygen half unit according to an embodiment of the invention, wherein the dose for performing the first ion implantation process is G

o The method of laterally diffusing a gold-oxygen half element according to an embodiment of the present invention, wherein the first well-coating-second ion implanting process forms a dose of 1Χ1012 to 9x10i3/cm2. The method for manufacturing a laterally diffused gold-oxygen half element according to an embodiment of the present invention, wherein the second well region is formed by the second ion implantation process, and the dose of the second ion implantation process is 1&lt;1012 To 9xl〇13/cm2. A method of braking a laterally diffused gold-oxide half element according to an embodiment of the invention, wherein the first conductivity type is Μ; and the second conductivity type is P type. A method of remanufacturing a laterally diffused gold-oxide half element according to an embodiment of the present invention, wherein the first conductivity type is a Ρ type; and the second conductivity type is a type. clothes

The laterally diffused MOS device of the present invention can reduce the opening resistance and increase the saturation current. A. The method of the present invention shapes the doped regions and the field oxide layer with different masks. Therefore, the position of the germanium-type doped regions is not limited by the field oxide layer. In addition, in the method of the present invention, the photoresist layer for defining the position of the doped region is formed over the mask layer for defining the field oxide layer region, and therefore, it is easier to perform the exposure process of the photoresist layer. quasi. The above and other objects, features, and advantages of the present invention will become more apparent from the following description of the appended claims. [Embodiment] Oxygen helium is a lateral diffusion gold according to the present invention - see FIG. 1 'Transversely diffused gold oxide half element 1 〇 includes Ν type well area 102, Ρ type well area 104, Ν The doped region 1〇6, the field oxide layer (10), and the Ν-type doped region 116 are used as the Ν-type drain region and the Ν-type doping region 114 as the ν-type source region, the gate dielectric layer 11G, and the gate. Conductive layer U2 and a p-type bulk contact region 118. The N-type well zone 1()2 is adjacent to the p-type well zone and is located in the basement 〇〇. The formation method of the N-type and the p-type well can form a photoresist pattern separately and is realized by the ion implantation process and the driving-in step. The source region 114 is located in the P-well region 1〇4; The area ιι6 is located in the N-type well area 1〇2. The method of forming the source region 114 and the drain region 116 can form a photoresist pattern on the substrate 100 and be formed by an ion implantation process. The field oxide layer 108 is located on the n-well region 102 between the source region 114 and the drain region 116. Field oxide layer 108 can be implemented using a local thermal oxidation process. In one embodiment, the field oxide layer 1 邻接 8 is adjacent to the drain region ι 6 . The gate dielectric layer no is disposed above the P-type well region 104 and the N-type well region 102 between the source region 114 and the field oxide layer 1〇8. A p-type well region defined between the N-type doped region 1〇6 and the source region under the gate dielectric layer 11〇 9 200847428 F960027 23687 tw. The type doping region 1 〇 6 盥 source L · is the length of the channel region 120.介介 ★ ', °. The distance between the 114 dreams, the formation method is, for example, the material of the layer 1 丨 0, for example, the field of oxygen is extended to a part of the polycrystalline stone, and the forming method is, for example, Li Erqi, crystal... Li Qing and Saki = two -# layer N-doped region 106 is located in the field oxide layer (1) below the _ type well region and her and polar regions: the doping concentration is lower than the concentration of the source region ιΐ4 or the bungee region US High, the lower the breakdown voltage. =, open; =; = source region _ can simultaneously take into account the "friends pressure". In addition, the Ns doped region 1 〇 6 bottom / distance from the substrate 1 () () surface 1GGa depth is also larger than the source region U4 area 116, 1143 or U6a is away from the surface of the substrate 1 又 in the embodiment of the selection of the micron process, the hole of the N-doped area 6 is about Q 4_G 5 microns; the source area (1) and the secret area Μ,: the degree of rice is about ο·ι microns. In one embodiment, the N-type doping zone = extension: to the partial P-type well zone 104. The formation of the N-type doping zone 1〇6 can A photoresist pattern is formed on the substrate 1 and is achieved by an ion implantation process. The P-type base contact region 118 is located in the P-type well region 104 and the source 200847428 t^bVOZ/ 23687twf.doc/p region Adjacent to the formation method of the P-type base contact region m, a photoresist pattern is formed on the substrate 100 by using an ion implantation process, and the substrate has a low concentration under the oxide layer of the 7L piece. Reducing the resistance so that the transistor is in saturation: There is a relatively small current, which increases the operating speed of the tree.

C to Jin 半 half-element can use a variety of process methods for financial invention. It is to be understood that the invention is not limited to the drawings. The method of manufacturing a laterally diffused gold-oxide half element according to an embodiment of the present invention is intended to be a cross-section. ', ^ according to Figure 2Α, forming a 井-type well-type well area in the -ρ-type base (10) 104 ° Ν-type well area 102 and ρ-type well area forming method can form a photoresist pattern separately, and then separately The type of disk-type ion implantation process, (10) Ν type and Ρ 子 植 植 植 植 植 植 植 植 植 植 植 植 植 植 植 植 植 植 植 植 植In the embodiment, the ν-type is detached, and the implanted ions are, for example, phosphorus or arsenic. For the p-type ion implantation process, the ions are as follows (4). In the logic G5 micron process, the embodiment 9X1^lxl012^, then, the pad oxide layer 2 and the mask layer 2〇2, 2 are formed on the substrate 100, and the port 204 is exposed to expose the substrate which is intended to form the field oxide layer. 100: The enamel pad oxide layer 200 is, for example, a ruthenium oxide layer, and the method of formation is, for example, heat. The mask layer 202 is, for example, a tantalum nitride layer formed by a method such as ruthenium chemical vapor deposition. In the formation of yttrium oxide layer and tantalum nitride layer 200847428

After Fyouuzv 23687twf.doc/p, it can be patterned via lithography and etching processes, with layer 200 and mask layer 2〇2. After the trench emulsification, a photoresist layer 2?6 having a =-opening 208 is formed on the mask layer 202. The size of the opening 2〇8 is larger than the size of the opening frame, and the surface of the substrate 102 exposed by the opening 204 and the partial mask sound 2〇2 are exposed. Thereafter, an ion implantation process is performed using the photoresist layer 2〇6 as a mask, and an N-type doping region 106 is formed in the KN-type well region 忉2. In the embodiment of the logic 〇 G·5 micron process, the ion implanted in the ion implantation process 21G is, for example, phosphorus or arsenic at a dose of 1χ1〇11 to 9xl〇12/cm2. In one embodiment, the size of the opening 2〇8 of the photoresist layer 2〇6 is such that the boundary of the subsequently formed N-type doped region (10) is in close proximity to or adjacent to the p-type 106 boundary 1G4a. N-doped region: The boundary 106a of the well region 102 extends to the P-well region 1〇4 error to pass through the N-type doping region, the confusing well-type well region, and the well-type well region 102 and? The well area is between 1 and 4; it can be caused by the electrical or reliability problems caused by the gap. Since the photoresist layer is formed on the mask layer 2〇2, the exposure process of the i-turn=Γ is easier to align with the photoresist layer directly formed in the 2 soil 08^. That is, the position of the opening 208 of the photoresist layer is relatively easy to stabilize. It is easy to make the length of the channel formed by the later performance. Then, please refer to Figure 2C, remove the Yangshuo # Local Oxidation System _ Μ Γ Layer, and then perform a base that is exposed by Qiu ^ 1 4, ie ^ A field oxide layer (10) is formed over the doped-type doped region 1〇6. Also 200847428

After Fyouuz/ 23687twf.doc/p, the mask layer 202 and the mat are wet. We use the hot Si: ^ to remove the pad oxide layer 200 by the acid etching. Next, the gate layer 112 and the gate conductive layer 112 are formed. The method of forming a gate is "a tenth layer of a polar guide, which is formed by a thermal oxidation method, for example, a thermal oxidation method. A gate is a doped polysilicon layer, for example, a doped polysilicon layer." 'Reuse lithography after multiple transitions between substrate and surname

Forming a photoresist layer 212 on the substrate (10), and then performing N

And the immersion zone ' = ^4 does not form the source region 114 type in the bottom 100 and the F heart / P 2 以外 outside the gate conductive layer 112 is implanted 4; 2 - 丨 财 Ν, Ν 子 植入 植入The process is lxl〇15/cm2. An ion such as bismuth phosphorus or arsenic is applied at a dose of 1 x 1 〇 U to π in Fig. 2D' to remove the photoresist layer 212, and another layer of the photoresist layer 216 is formed on the substrate. Thereafter, the ions implanted in the base ion implantation process 218 adjacent to the source region 114 in the form of the p-type ion 戚 2 are, for example, boron. In the manufacturing method, since the germanium-type doped region (10) is defined by the field-oxidized mask and the photoresist layer, the material is defined by the photomask of _ and the same photoresist layer, so the position is not limited. Field oxide layer (10). Noisy (4) 6 13 200847428 P960027 23687twf.doc/p In addition, the manufacturing method of the present embodiment is to form a mask layer 2〇2 for defining the field oxide f 1〇8 region, and then formed on the mask layer layer. The photoresist layer 2〇6 defining the position of the N-type doped region 106 is thus easier to align when the photoresist I 2G6 is exposed, compared to the case where the photoresist layer is formed directly on the substrate. That is, the photoresist layer is applied with an opening period: the second layer is easy to control 'the N-type doping region 1〇6 can be formed at a predetermined position*. The process of the present invention can precisely control the source to the Γ^ region 106. Between the length of the channel region 120, the components have a consistent implementation in the above-mentioned implementation, the well region, the P-type doped region, the field oxide layer, the Ν-type bungee region disk: electrical layer, gate The conductive layer and the lateral = dioxane half element of the 基-type base contact region are illustrated. However, this is a wide-ranging Jinshuijing area, (7)::: two = two type: one well area, the first pole area, the inter-dielectric layer, the inter-subduction layer, the p-type bungee area and the Ρ type source Ο Gold oxygen half yuan; And the lateral limitation of the w and the base contact area of the crucible type. In the above, it is not intended to be used in the scope of the invention, and may be made without departing from the spirit of the invention. Protection of the invention [Illustration of the drawings] Oxygen half = is a lateral diffusion gold according to an embodiment of the invention. 200847428 P960027 23687twf.doc/p FIGS. 2A to 2E are diagrams according to an embodiment of the invention. Schematic diagram of a process for manufacturing a laterally diffused gold-oxide half element. [Main element symbol description] 10: Diffusion gold-oxygen half element 100: Substrate 100a: Substrate surface 102, 104: Well area 104a, 106a: Boundary f 106: Doping The impurity region 110: the gate dielectric layer 112: the gate conductive layer 114, the source region 114a, 116a, 106a, the bottom portion 116, and the polar region 118: the base contact region 120: the channel region 〇200: the pad oxide layer 202 · Cover layer 204, 208: openings 210, 214, 218: ion implantation process 206, 212, 216: photoresist layer L: channel length 15

Claims (1)

200847428 P960027 23687tw£d〇c/p X. Patent application circle: L A laterally diffused gold-oxygen half element, including one of the bases of the first 'private type'-well zone, located in the second conductivity type a second well region of the second conductivity type is located in the substrate adjacent to the first doped region of the second electrical type, located in the middle region of the first well region: second = minute = idle; conductive layer and the Between the substrates; and the second doped region of the 竽 : ^ ^ ^ 位于 位于 位于 位于 位于 位于 位于 位于 位于 位于 位于 位于 位于 位于 : : : : : : : : : : : : : : : : : : : : : : The Erjing District defines a channel area. The doping concentration of the third doped region is lower than the doping concentration in the doped region between the doped regions and the doped region. Or i as claimed in the scope of the patent application (the fourth aspect of the invention): the bottom of the third doped region is two from the surface of the substrate: +7L at the bottom of the di-doped region from the surface of the substrate The greater the degree of twist 2, the lateral ς described in item i of the patent application scope, the middle 戎--conductivity type is Ν type; the second conductive, flying half element 5. The lateral diffusion as described in claim 1 The gold gas type half element 16 200847428 P960027 23687twf.doc/p Ο 、 /, the first conductivity type is p type; the second conductivity type is 6. 6 If the application of the township surrounding the first item of the lateral diffusion of gold oxygen The vehicle - wherein the second junction region extends further into a portion of the second well region. The 所述7mt paste range of the second item includes an oxide layer located between the pair of breast milk and the sputum region. The fourth doped region is 4', and the second impurity member is in the form of a transverse bridging oxygen half element, wherein the gate conductive layer covers the field oxide layer. + 兀9. The lateral expansion described in claim i, wherein the first doped region is a sacral region bungee region. 乜4 &amp; is a source 10· a laterally diffused gold oxide half element The manufacturing method is as follows: a base towel having a second conductivity type: a first type of conductive type and a second type of conductive material having a second conductivity type - forming a first conductive type doped region in the first well region .-, forming a _ field oxide layer on a portion of the doped region; 'forming a gate dielectric layer on the substrate, and forming a gate conductive layer on the V oxide layer: the pole conductive layer a source region of the conductive type other than the sidewall, and forming a drain region of the first well sidewall adjacent to the doped region, and a conductive region. A method of manufacturing a laterally diffused gold-oxygen half-element device layer 17 23687 twf.d〇c/p 200847428, as described in claim 1G, wherein the step of forming the first layer includes a doping region and the doping region a field oxide screen layer, the first opening exposing a pad oxide layer of the pre-6... opening and a cover formed on the substrate a first surface of the substrate; forming a substrate on the mask layer; forming a layer on the mask layer; the base layer exposed by the first opening, exposed with the photoresist layer as a mask, into the mask layer Forming the doped region in the first well region; removing the photoresist layer by the ion-ion implantation process; and exposing the exposed portion to a local thermal oxidation process to form the field oxide in the first open bottom a layer; and a method of manufacturing the mask layer and the pad oxide layer, wherein the _ region of the _ degree 3 = milk + 掺杂 the doping concentration of the drain region. ' 氏 in the source region or 13. If you want to use the special (4) pin-shaped manufacturing materials, the towel is (4) = 2 1χ10ιι to 9xl〇12/cm2. τ % is not part of the = = Fang Fang ^ Item 12 of the horizontal diffusion of the gold oxide half-band with the garment 1 to carry out the first: the first well area of the Hai is formed by a second ion implantation process, The dose of the second ion implantation process was 9χΐ〇ΐ3_2. Kawasaki 15 · The lateral diffusion gold oxide half 18 as described in claim 12, 200847428 P960027 23687twf.doc/p manufacturing method 'the second well area is formed by the second ion implantation process And performing the second ion implantation process 〇122 2xx0I3/cm2〇^ 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 The type is 1^ type; the second conductivity type is X type. #. Applying the laterally diffused gold oxide half element described in claim 10, wherein the first conductivity type is p type; the second conductivity type ϋ 19