FR3036846B1 - Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant - Google Patents

Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant Download PDF

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Publication number
FR3036846B1
FR3036846B1 FR1554853A FR1554853A FR3036846B1 FR 3036846 B1 FR3036846 B1 FR 3036846B1 FR 1554853 A FR1554853 A FR 1554853A FR 1554853 A FR1554853 A FR 1554853A FR 3036846 B1 FR3036846 B1 FR 3036846B1
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FR
France
Prior art keywords
fdsoi
integrated circuit
soi substrate
corresponding integrated
transistors made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1554853A
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English (en)
Other versions
FR3036846A1 (fr
Inventor
Emmanuel Perrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1554853A priority Critical patent/FR3036846B1/fr
Priority to CN201520976019.XU priority patent/CN205542782U/zh
Priority to CN201510860495.XA priority patent/CN106206455B/zh
Priority to US14/956,594 priority patent/US9876076B2/en
Priority to DE102015121913.1A priority patent/DE102015121913B4/de
Publication of FR3036846A1 publication Critical patent/FR3036846A1/fr
Priority to US15/845,930 priority patent/US10283588B2/en
Application granted granted Critical
Publication of FR3036846B1 publication Critical patent/FR3036846B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
FR1554853A 2015-05-29 2015-05-29 Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant Expired - Fee Related FR3036846B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1554853A FR3036846B1 (fr) 2015-05-29 2015-05-29 Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant
CN201520976019.XU CN205542782U (zh) 2015-05-29 2015-11-30 集成电路
CN201510860495.XA CN106206455B (zh) 2015-05-29 2015-11-30 用于在soi衬底特别是fdsoi衬底上制造的晶体管之间局部隔离的方法以及对应的集成电路
US14/956,594 US9876076B2 (en) 2015-05-29 2015-12-02 Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit
DE102015121913.1A DE102015121913B4 (de) 2015-05-29 2015-12-16 Verfahren zur lokalen Isolierung zwischen Transistoren, die auf einem Substrat SOI, insbesondere FDSOI, verwirklicht sind, und entsprechende integrierte Schaltung
US15/845,930 US10283588B2 (en) 2015-05-29 2017-12-18 Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1554853A FR3036846B1 (fr) 2015-05-29 2015-05-29 Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant
FR1554853 2015-05-29

Publications (2)

Publication Number Publication Date
FR3036846A1 FR3036846A1 (fr) 2016-12-02
FR3036846B1 true FR3036846B1 (fr) 2018-06-15

Family

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FR1554853A Expired - Fee Related FR3036846B1 (fr) 2015-05-29 2015-05-29 Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant

Country Status (4)

Country Link
US (2) US9876076B2 (fr)
CN (2) CN205542782U (fr)
DE (1) DE102015121913B4 (fr)
FR (1) FR3036846B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3036846B1 (fr) * 2015-05-29 2018-06-15 Stmicroelectronics (Crolles 2) Sas Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant
JP6594261B2 (ja) * 2016-05-24 2019-10-23 ルネサスエレクトロニクス株式会社 半導体装置
US20230260994A1 (en) * 2022-02-17 2023-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Checkerboard dummy design for epitaxial open ratio

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303962B1 (en) * 1999-01-06 2001-10-16 Advanced Micro Devices, Inc. Dielectrically-isolated transistor with low-resistance metal source and drain formed using sacrificial source and drain structures
JP4698793B2 (ja) * 2000-04-03 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置
US6713335B2 (en) 2002-08-22 2004-03-30 Chartered Semiconductor Manufacturing Ltd. Method of self-aligning a damascene gate structure to isolation regions
US7834662B2 (en) 2006-12-13 2010-11-16 Apple Inc. Level shifter with embedded logic and low minimum voltage
US9349655B2 (en) * 2008-08-29 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method for mechanical stress enhancement in semiconductor devices
JP2010251344A (ja) * 2009-04-10 2010-11-04 Hitachi Ltd 半導体装置およびその製造方法
US8502316B2 (en) 2010-02-11 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned two-step STI formation through dummy poly removal
US9263339B2 (en) * 2010-05-20 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Selective etching in the formation of epitaxy regions in MOS devices
US8492210B2 (en) * 2010-12-17 2013-07-23 Institute of Microelectronics, Chinese Academy of Sciences Transistor, semiconductor device comprising the transistor and method for manufacturing the same
US8546208B2 (en) * 2011-08-19 2013-10-01 International Business Machines Corporation Isolation region fabrication for replacement gate processing
CN103050525B (zh) * 2011-10-12 2015-06-17 中国科学院微电子研究所 Mosfet及其制造方法
US8735991B2 (en) 2011-12-01 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. High gate density devices and methods
FR3036846B1 (fr) * 2015-05-29 2018-06-15 Stmicroelectronics (Crolles 2) Sas Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant

Also Published As

Publication number Publication date
DE102015121913A1 (de) 2016-12-01
US9876076B2 (en) 2018-01-23
US20180108731A1 (en) 2018-04-19
FR3036846A1 (fr) 2016-12-02
DE102015121913B4 (de) 2023-12-07
CN106206455B (zh) 2020-11-13
CN205542782U (zh) 2016-08-31
US20160351660A1 (en) 2016-12-01
CN106206455A (zh) 2016-12-07
US10283588B2 (en) 2019-05-07

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