FR3042907B1 - Procede de fabrication d'un dispositif a transistors mos - Google Patents

Procede de fabrication d'un dispositif a transistors mos

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Publication number
FR3042907B1
FR3042907B1 FR1560090A FR1560090A FR3042907B1 FR 3042907 B1 FR3042907 B1 FR 3042907B1 FR 1560090 A FR1560090 A FR 1560090A FR 1560090 A FR1560090 A FR 1560090A FR 3042907 B1 FR3042907 B1 FR 3042907B1
Authority
FR
France
Prior art keywords
manufacturing
mos transistor
transistor device
mos
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1560090A
Other languages
English (en)
Other versions
FR3042907A1 (fr
Inventor
Sonarith Chhun
Emmanuel Josse
Gregory Bidal
Dominique Golanski
Francois Andrieu
Jerome Mazurier
Olivier Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics Crolles 2 SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics Crolles 2 SAS, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1560090A priority Critical patent/FR3042907B1/fr
Priority to US15/296,205 priority patent/US9876032B2/en
Publication of FR3042907A1 publication Critical patent/FR3042907A1/fr
Application granted granted Critical
Publication of FR3042907B1 publication Critical patent/FR3042907B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
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US10991689B2 (en) * 2019-04-05 2021-04-27 Globalfoundries U.S. Inc. Additional spacer for self-aligned contact for only high voltage FinFETs
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