FR3050867B1 - Procede de fabrication d'un transistor a nanocouches a canal vertical - Google Patents
Procede de fabrication d'un transistor a nanocouches a canal vertical Download PDFInfo
- Publication number
- FR3050867B1 FR3050867B1 FR1653956A FR1653956A FR3050867B1 FR 3050867 B1 FR3050867 B1 FR 3050867B1 FR 1653956 A FR1653956 A FR 1653956A FR 1653956 A FR1653956 A FR 1653956A FR 3050867 B1 FR3050867 B1 FR 3050867B1
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- Prior art keywords
- nanocouches
- transistor
- manufacturing
- vertical channel
- channel
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- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1653956A FR3050867B1 (fr) | 2016-05-02 | 2016-05-02 | Procede de fabrication d'un transistor a nanocouches a canal vertical |
US15/583,304 US10096694B2 (en) | 2016-05-02 | 2017-05-01 | Process for fabricating a vertical-channel nanolayer transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1653956A FR3050867B1 (fr) | 2016-05-02 | 2016-05-02 | Procede de fabrication d'un transistor a nanocouches a canal vertical |
FR1653956 | 2016-05-02 |
Publications (2)
Publication Number | Publication Date |
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FR3050867A1 FR3050867A1 (fr) | 2017-11-03 |
FR3050867B1 true FR3050867B1 (fr) | 2018-05-25 |
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FR1653956A Active FR3050867B1 (fr) | 2016-05-02 | 2016-05-02 | Procede de fabrication d'un transistor a nanocouches a canal vertical |
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US (1) | US10096694B2 (fr) |
FR (1) | FR3050867B1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10297507B2 (en) * | 2017-10-17 | 2019-05-21 | International Business Machines Corporation | Self-aligned vertical field-effect transistor with epitaxially grown bottom and top source drain regions |
US20210384317A1 (en) * | 2018-10-18 | 2021-12-09 | Georgia Tech Research Corporation | Chemical Etching Methods for Fabricating Nanostructures |
US10879311B2 (en) | 2019-02-08 | 2020-12-29 | International Business Machines Corporation | Vertical transport Fin field effect transistors combined with resistive memory structures |
US11424120B2 (en) | 2021-01-22 | 2022-08-23 | Tokyo Electron Limited | Plasma etching techniques |
EP4167273A4 (fr) * | 2021-08-30 | 2023-10-11 | Changxin Memory Technologies, Inc. | Structure semi-conductrice et son procédé de formation |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US6509586B2 (en) | 2000-03-31 | 2003-01-21 | Fujitsu Limited | Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit |
KR100685659B1 (ko) * | 2006-01-26 | 2007-02-26 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
DE102009001552A1 (de) | 2008-12-12 | 2010-06-17 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Bipolartransistor mit selbstjustiertem Emitterkontakt |
US8377788B2 (en) * | 2010-11-15 | 2013-02-19 | National Semiconductor Corporation | SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor |
US8890119B2 (en) * | 2012-12-18 | 2014-11-18 | Intel Corporation | Vertical nanowire transistor with axially engineered semiconductor and gate metallization |
US9105677B2 (en) | 2013-10-22 | 2015-08-11 | International Business Machines Corporation | Base profile of self-aligned bipolar transistors for power amplifier applications |
-
2016
- 2016-05-02 FR FR1653956A patent/FR3050867B1/fr active Active
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2017
- 2017-05-01 US US15/583,304 patent/US10096694B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR3050867A1 (fr) | 2017-11-03 |
US10096694B2 (en) | 2018-10-09 |
US20170330958A1 (en) | 2017-11-16 |
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