KR100373287B1 - 반도체 장치, 그 제조 방법 및 더미 영역의 배치 방법 - Google Patents

반도체 장치, 그 제조 방법 및 더미 영역의 배치 방법 Download PDF

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Publication number
KR100373287B1
KR100373287B1 KR10-2000-0072678A KR20000072678A KR100373287B1 KR 100373287 B1 KR100373287 B1 KR 100373287B1 KR 20000072678 A KR20000072678 A KR 20000072678A KR 100373287 B1 KR100373287 B1 KR 100373287B1
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South Korea
Prior art keywords
insulating film
dummy
region
soi device
silicon layer
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Expired - Fee Related
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KR10-2000-0072678A
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Korean (ko)
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KR20010096517A (ko
Inventor
마쯔모또다꾸지
이와마쯔도시아끼
히라노유우이찌
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR10-2000-0072678A 2000-04-03 2000-12-02 반도체 장치, 그 제조 방법 및 더미 영역의 배치 방법 Expired - Fee Related KR100373287B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000100437A JP4698793B2 (ja) 2000-04-03 2000-04-03 半導体装置
JP2000-100437 2000-04-03

Publications (2)

Publication Number Publication Date
KR20010096517A KR20010096517A (ko) 2001-11-07
KR100373287B1 true KR100373287B1 (ko) 2003-02-25

Family

ID=18614644

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0072678A Expired - Fee Related KR100373287B1 (ko) 2000-04-03 2000-12-02 반도체 장치, 그 제조 방법 및 더미 영역의 배치 방법

Country Status (6)

Country Link
US (1) US6455894B1 (https=)
JP (1) JP4698793B2 (https=)
KR (1) KR100373287B1 (https=)
DE (1) DE10059620A1 (https=)
FR (1) FR2807211B1 (https=)
TW (1) TW477067B (https=)

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KR20170024702A (ko) * 2015-08-26 2017-03-08 에스케이하이닉스 주식회사 반도체 장치

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US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
KR100422468B1 (ko) * 2001-07-31 2004-03-11 삼성전자주식회사 에스 오 아이 소자 및 그 제조방법
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
KR100897474B1 (ko) * 2002-06-29 2009-05-14 매그나칩 반도체 유한회사 바이폴라 트랜지스터의 제조방법
WO2004081982A2 (en) * 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
JP4371710B2 (ja) * 2003-06-09 2009-11-25 キヤノン株式会社 半導体基体、半導体装置及びこれらの製造方法
JP4651920B2 (ja) * 2003-07-15 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置
JP4561060B2 (ja) * 2003-07-28 2010-10-13 パナソニック株式会社 半導体装置及びその製造方法
US6930351B2 (en) 2003-08-14 2005-08-16 Renesas Technology Corp. Semiconductor device with dummy gate electrode
US20050056881A1 (en) * 2003-09-15 2005-03-17 Yee-Chia Yeo Dummy pattern for silicide gate electrode
US7109532B1 (en) * 2003-12-23 2006-09-19 Lee Zachary K High Ion/Ioff SOI MOSFET using body voltage control
DE102004048096A1 (de) * 2004-09-30 2006-04-27 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur
JP5172083B2 (ja) * 2004-10-18 2013-03-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法、並びにメモリ回路
US7883979B2 (en) * 2004-10-26 2011-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device with reduced floating body effect
US20060091423A1 (en) * 2004-10-29 2006-05-04 Peter Poechmueller Layer fill for homogenous technology processing
KR100641555B1 (ko) * 2004-12-30 2006-10-31 동부일렉트로닉스 주식회사 트랜치 소스 구조를 갖는 수평형 디모스 트랜지스터
JP5091462B2 (ja) * 2006-01-19 2012-12-05 パナソニック株式会社 セルおよび半導体装置
US20090087956A1 (en) * 2007-09-27 2009-04-02 Texas Instruments Incorporated Dummy Contact Fill to Improve Post Contact Chemical Mechanical Polish Topography
KR100967037B1 (ko) * 2007-10-17 2010-06-29 주식회사 하이닉스반도체 퓨즈 박스 및 그 형성 방법
US7880229B2 (en) * 2007-10-18 2011-02-01 Globalfoundries Inc. Body tie test structure for accurate body effect measurement
US7994577B2 (en) * 2008-07-18 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection structures on SOI substrates
CN101872737A (zh) * 2010-01-28 2010-10-27 中国科学院上海微系统与信息技术研究所 一种抑制soi浮体效应的mos结构及其制作方法
US8598656B2 (en) * 2010-03-08 2013-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus of forming ESD protection device
KR101804420B1 (ko) * 2010-06-14 2018-01-11 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8217464B2 (en) * 2010-08-06 2012-07-10 Altera Corporation N-well/P-well strap structures
JP2011146733A (ja) * 2011-03-18 2011-07-28 Renesas Electronics Corp 半導体装置の製造方法
US8765607B2 (en) * 2011-06-01 2014-07-01 Freescale Semiconductor, Inc. Active tiling placement for improved latch-up immunity
US8796855B2 (en) 2012-01-13 2014-08-05 Freescale Semiconductor, Inc. Semiconductor devices with nonconductive vias
US9143123B2 (en) * 2012-07-10 2015-09-22 Infineon Technologies Ag RF switch, mobile communication device and method for switching an RF signal
CN105633134B (zh) * 2014-10-28 2019-08-27 中芯国际集成电路制造(上海)有限公司 半导体栅极版图及其修正方法、半导体结构形成方法
FR3036846B1 (fr) * 2015-05-29 2018-06-15 Stmicroelectronics (Crolles 2) Sas Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant
US10249621B2 (en) * 2016-12-15 2019-04-02 Texas Instruments Incorporated Dummy contacts to mitigate plasma charging damage to gate dielectrics
KR101927667B1 (ko) * 2018-03-15 2018-12-10 한국과학기술원 단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 단위 모스펫

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JPH0832039A (ja) * 1994-07-12 1996-02-02 Nippondenso Co Ltd 半導体装置およびその製造方法
JPH10200124A (ja) * 1997-01-14 1998-07-31 Toshiba Corp 半導体装置
US5910017A (en) * 1996-02-21 1999-06-08 Texas Instruments Incorporated Increasing uniformity in a refill layer thickness for a semiconductor device
KR20000004473A (ko) * 1998-06-30 2000-01-25 윤종용 소자분리영역에 형성된 더미 도전층을 갖춘반도체소자 및 그제조방법

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JP4540146B2 (ja) * 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JPH0832039A (ja) * 1994-07-12 1996-02-02 Nippondenso Co Ltd 半導体装置およびその製造方法
US5910017A (en) * 1996-02-21 1999-06-08 Texas Instruments Incorporated Increasing uniformity in a refill layer thickness for a semiconductor device
JPH10200124A (ja) * 1997-01-14 1998-07-31 Toshiba Corp 半導体装置
KR20000004473A (ko) * 1998-06-30 2000-01-25 윤종용 소자분리영역에 형성된 더미 도전층을 갖춘반도체소자 및 그제조방법

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Publication number Priority date Publication date Assignee Title
KR20170024702A (ko) * 2015-08-26 2017-03-08 에스케이하이닉스 주식회사 반도체 장치
KR102420539B1 (ko) * 2015-08-26 2022-07-14 에스케이하이닉스 주식회사 반도체 장치

Also Published As

Publication number Publication date
US6455894B1 (en) 2002-09-24
FR2807211A1 (fr) 2001-10-05
DE10059620A1 (de) 2001-10-18
JP4698793B2 (ja) 2011-06-08
JP2001284599A (ja) 2001-10-12
FR2807211B1 (fr) 2004-12-17
TW477067B (en) 2002-02-21
KR20010096517A (ko) 2001-11-07

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