CN100459119C - 横向lubistor结构和方法 - Google Patents
横向lubistor结构和方法 Download PDFInfo
- Publication number
- CN100459119C CN100459119C CNB028299787A CN02829978A CN100459119C CN 100459119 C CN100459119 C CN 100459119C CN B028299787 A CNB028299787 A CN B028299787A CN 02829978 A CN02829978 A CN 02829978A CN 100459119 C CN100459119 C CN 100459119C
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- fin
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- esd protection
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7857—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET of the accumulation type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/038546 WO2004051749A1 (en) | 2002-12-03 | 2002-12-03 | Lateral lubistor structure and method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1695245A CN1695245A (zh) | 2005-11-09 |
CN100459119C true CN100459119C (zh) | 2009-02-04 |
Family
ID=32467120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028299787A Expired - Lifetime CN100459119C (zh) | 2002-12-03 | 2002-12-03 | 横向lubistor结构和方法 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1599904A4 (zh) |
JP (1) | JP2006522460A (zh) |
CN (1) | CN100459119C (zh) |
AU (1) | AU2002351206A1 (zh) |
WO (1) | WO2004051749A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005007822B4 (de) | 2005-02-21 | 2014-05-22 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Tunnel-Feldeffekttransistor |
DE102005022763B4 (de) | 2005-05-18 | 2018-02-01 | Infineon Technologies Ag | Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises |
DE102005039365B4 (de) * | 2005-08-19 | 2022-02-10 | Infineon Technologies Ag | Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis |
CN100449783C (zh) * | 2005-11-29 | 2009-01-07 | 台湾积体电路制造股份有限公司 | 具有体接触窗的鳍状场效应晶体管及其制造方法 |
DE102006022105B4 (de) * | 2006-05-11 | 2012-03-08 | Infineon Technologies Ag | ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis |
DE102006023429B4 (de) * | 2006-05-18 | 2011-03-10 | Infineon Technologies Ag | ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis |
US7456471B2 (en) * | 2006-09-15 | 2008-11-25 | International Business Machines Corporation | Field effect transistor with raised source/drain fin straps |
EP2117045A1 (en) * | 2008-05-09 | 2009-11-11 | Imec | Design Methodology for MuGFET ESD Protection Devices |
US8232603B2 (en) * | 2009-03-19 | 2012-07-31 | International Business Machines Corporation | Gated diode structure and method including relaxed liner |
CN102683418B (zh) * | 2012-05-22 | 2014-11-26 | 清华大学 | 一种finfet动态随机存储器单元及其制备方法 |
US8785968B2 (en) * | 2012-10-08 | 2014-07-22 | Intel Mobile Communications GmbH | Silicon controlled rectifier (SCR) device for bulk FinFET technology |
US9209265B2 (en) * | 2012-11-15 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD devices comprising semiconductor fins |
US9093492B2 (en) * | 2012-11-29 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode structure compatible with FinFET process |
CN104124153B (zh) * | 2013-04-28 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 鳍式双极结型晶体管及其形成方法 |
US9601607B2 (en) * | 2013-11-27 | 2017-03-21 | Qualcomm Incorporated | Dual mode transistor |
CN107369710B (zh) * | 2016-05-12 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | 栅控二极管及其形成方法 |
CN107492569B (zh) * | 2016-06-12 | 2020-02-07 | 中芯国际集成电路制造(上海)有限公司 | 栅控二极管及其形成方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5610790A (en) * | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
CN1176490A (zh) * | 1996-09-06 | 1998-03-18 | 三菱电机株式会社 | 半导体集成电路 |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4037140A (en) * | 1976-04-14 | 1977-07-19 | Rca Corporation | Protection circuit for insulated-gate field-effect transistors (IGFETS) |
US4282556A (en) * | 1979-05-21 | 1981-08-04 | Rca Corporation | Input protection device for insulated gate field effect transistor |
JPH0425175A (ja) * | 1990-05-21 | 1992-01-28 | Canon Inc | ダイオード |
US5952695A (en) * | 1997-03-05 | 1999-09-14 | International Business Machines Corporation | Silicon-on-insulator and CMOS-on-SOI double film structures |
US6894324B2 (en) * | 2001-02-15 | 2005-05-17 | United Microelectronics Corp. | Silicon-on-insulator diodes and ESD protection circuits |
-
2002
- 2002-12-03 CN CNB028299787A patent/CN100459119C/zh not_active Expired - Lifetime
- 2002-12-03 AU AU2002351206A patent/AU2002351206A1/en not_active Abandoned
- 2002-12-03 WO PCT/US2002/038546 patent/WO2004051749A1/en active Application Filing
- 2002-12-03 JP JP2004557083A patent/JP2006522460A/ja active Pending
- 2002-12-03 EP EP02786852A patent/EP1599904A4/en not_active Ceased
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5610790A (en) * | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
CN1176490A (zh) * | 1996-09-06 | 1998-03-18 | 三菱电机株式会社 | 半导体集成电路 |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
Also Published As
Publication number | Publication date |
---|---|
EP1599904A4 (en) | 2006-04-26 |
EP1599904A1 (en) | 2005-11-30 |
CN1695245A (zh) | 2005-11-09 |
WO2004051749A1 (en) | 2004-06-17 |
AU2002351206A1 (en) | 2004-06-23 |
JP2006522460A (ja) | 2006-09-28 |
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