TW444265B - Active matrix display device and method of manufacturing the same - Google Patents

Active matrix display device and method of manufacturing the same Download PDF

Info

Publication number
TW444265B
TW444265B TW087110257A TW87110257A TW444265B TW 444265 B TW444265 B TW 444265B TW 087110257 A TW087110257 A TW 087110257A TW 87110257 A TW87110257 A TW 87110257A TW 444265 B TW444265 B TW 444265B
Authority
TW
Taiwan
Prior art keywords
film
photoelectric conversion
active element
pixel
electrode
Prior art date
Application number
TW087110257A
Other languages
English (en)
Chinese (zh)
Inventor
Hongyong Zhang
Masayuki Sakakura
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Application granted granted Critical
Publication of TW444265B publication Critical patent/TW444265B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13324—Circuits comprising solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal (AREA)
TW087110257A 1997-07-01 1998-06-25 Active matrix display device and method of manufacturing the same TW444265B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19177597A JP4027465B2 (ja) 1997-07-01 1997-07-01 アクティブマトリクス型表示装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW444265B true TW444265B (en) 2001-07-01

Family

ID=16280335

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087110257A TW444265B (en) 1997-07-01 1998-06-25 Active matrix display device and method of manufacturing the same

Country Status (4)

Country Link
US (6) US6087648A (enExample)
JP (1) JP4027465B2 (enExample)
KR (2) KR100530678B1 (enExample)
TW (1) TW444265B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398707B (zh) * 2008-05-16 2013-06-11 Au Optronics Corp 光感測單元及具有此光感測單元之畫素結構與液晶顯示面板
TWI781720B (zh) * 2021-08-10 2022-10-21 友達光電股份有限公司 光偵測裝置

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7872728B1 (en) 1996-10-22 2011-01-18 Seiko Epson Corporation Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same
US20010043175A1 (en) * 1996-10-22 2001-11-22 Masahiro Yasukawa Liquid crystal panel substrate, liquid crystal panel, and electronic equipment and projection type display device both using the same
JP4187819B2 (ja) * 1997-03-14 2008-11-26 シャープ株式会社 薄膜装置の製造方法
JP4027465B2 (ja) * 1997-07-01 2007-12-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその製造方法
JP3838393B2 (ja) * 1997-09-02 2006-10-25 株式会社半導体エネルギー研究所 イメージセンサを内蔵した表示装置
JP4271268B2 (ja) 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JP4044187B2 (ja) * 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
JPH11326954A (ja) * 1998-05-15 1999-11-26 Semiconductor Energy Lab Co Ltd 半導体装置
US6773953B1 (en) * 1998-12-23 2004-08-10 Intel Corporation Camera sensor identifier via etched flaw
KR100303774B1 (ko) * 1998-12-30 2001-11-15 박종섭 개선된 광감도를 갖는 씨모스이미지센서 제조방법
JP4731655B2 (ja) * 1999-02-12 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6506635B1 (en) * 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
US6180426B1 (en) 1999-03-01 2001-01-30 Mou-Shiung Lin High performance sub-system design and assembly
JP4641586B2 (ja) * 1999-03-12 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100348996B1 (ko) * 1999-04-12 2002-08-17 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
US6507010B1 (en) * 1999-05-11 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Contact area sensor
US7061062B2 (en) * 1999-07-01 2006-06-13 Gateway Inc. Integrated circuit with unified input device, microprocessor and display systems
US7242449B1 (en) * 1999-07-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and integral image recognition/display apparatus
KR100631011B1 (ko) * 1999-08-12 2006-10-04 엘지.필립스 엘시디 주식회사 박막트랜지스터 제조방법
US6587086B1 (en) 1999-10-26 2003-07-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6614054B1 (en) * 2000-11-27 2003-09-02 Lg.Philips Lcd Co., Ltd. Polysilicon thin film transistor used in a liquid crystal display and the fabricating method
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
US6747290B2 (en) 2000-12-12 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Information device
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
DE10100884A1 (de) * 2001-01-11 2002-07-25 Bosch Gmbh Robert Vorrichtung zur Sensierung eines Magnetfeldes, Magnetfeldmesser und Strommesser
TWI313507B (en) 2002-10-25 2009-08-11 Megica Corporatio Method for assembling chips
US7351605B2 (en) * 2001-04-09 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4703883B2 (ja) 2001-04-09 2011-06-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20030191693A1 (en) * 2002-04-08 2003-10-09 Itamar Aphek System and method for conducting an advertising business
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
TW544882B (en) 2001-12-31 2003-08-01 Megic Corp Chip package structure and process thereof
TW503496B (en) 2001-12-31 2002-09-21 Megic Corp Chip packaging structure and manufacturing process of the same
TW584950B (en) * 2001-12-31 2004-04-21 Megic Corp Chip packaging structure and process thereof
US6673698B1 (en) 2002-01-19 2004-01-06 Megic Corporation Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers
JP4456806B2 (ja) * 2002-03-19 2010-04-28 セイコーエプソン株式会社 液晶表示装置、電気光学装置とその製造方法、電子機器
KR100560347B1 (ko) * 2002-03-29 2006-03-14 테스텍 주식회사 지문인식장치의 ｔｆｔ 지문입력기 제조방법
US7609360B2 (en) * 2002-06-17 2009-10-27 Fujifilm Corporation Image display device
JP4401066B2 (ja) * 2002-11-19 2010-01-20 三洋電機株式会社 半導体集積装置及びその製造方法
TWI350404B (en) * 2002-12-13 2011-10-11 Semiconductor Energy Lab Light emitting device
AU2003289448A1 (en) * 2003-01-08 2004-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its fabricating method
GB2398916A (en) * 2003-02-28 2004-09-01 Sharp Kk Display and sensor apparatus
US7307940B2 (en) 2003-06-30 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Optical pick-up device
CN101483180B (zh) * 2003-07-14 2011-11-16 株式会社半导体能源研究所 液晶显示器件
JP2005043672A (ja) 2003-07-22 2005-02-17 Toshiba Matsushita Display Technology Co Ltd アレイ基板およびその製造方法
TW591698B (en) * 2003-08-18 2004-06-11 Au Optronics Corp Thin film transistor array substrate and photolithography process and mask design thereof
KR100669270B1 (ko) * 2003-08-25 2007-01-16 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치 및 광전 변환 소자
CN100339940C (zh) * 2003-08-28 2007-09-26 友达光电股份有限公司 薄膜电晶体阵列基板及其微影制造方法与光罩设计结构
US7253391B2 (en) 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
CN100477240C (zh) * 2003-10-06 2009-04-08 株式会社半导体能源研究所 半导体器件以及制造该器件的方法
JP4616559B2 (ja) * 2004-01-15 2011-01-19 大日本印刷株式会社 表示装置及び表示システム
US7145359B2 (en) * 2004-06-28 2006-12-05 Silicon Laboratories Inc. Multiple signal format output buffer
US7342256B2 (en) * 2004-07-16 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Display device mounted with read function and electric appliance
JP4817636B2 (ja) 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US8378963B2 (en) * 2004-12-09 2013-02-19 Sony Ericsson Mobile Communications Ab Photosensors for displays and related devices
WO2006118028A1 (ja) * 2005-04-28 2006-11-09 Sharp Kabushiki Kaisha 液晶表示装置
TWI269420B (en) 2005-05-03 2006-12-21 Megica Corp Stacked chip package and process thereof
US7722691B2 (en) * 2005-09-30 2010-05-25 Saint-Gobain Abrasives, Inc. Abrasive tools having a permeable structure
US20070268209A1 (en) * 2006-05-16 2007-11-22 Kenneth Wargon Imaging Panels Including Arrays Of Audio And Video Input And Output Elements
TWI539423B (zh) * 2006-05-31 2016-06-21 半導體能源研究所股份有限公司 顯示裝置、顯示裝置的驅動方法、以及電子設備
KR100912188B1 (ko) 2006-06-30 2009-08-14 엘지디스플레이 주식회사 액정표시장치 및 이의 제조 방법
KR100878379B1 (ko) * 2006-07-12 2009-01-13 엡슨 이미징 디바이스 가부시키가이샤 액정 표시 장치
KR101174015B1 (ko) 2006-09-14 2012-08-16 엘지전자 주식회사 평판 표시장치 및 그 제조 방법
KR101309174B1 (ko) * 2006-11-15 2013-09-23 삼성디스플레이 주식회사 표시 장치와 그 제조 방법
KR101340444B1 (ko) * 2006-12-23 2013-12-11 엘지디스플레이 주식회사 액정표시장치 및 제조방법
KR101441346B1 (ko) * 2007-04-27 2014-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5298461B2 (ja) * 2007-05-29 2013-09-25 セイコーエプソン株式会社 液晶装置及び電子機器
US20090027566A1 (en) * 2007-07-27 2009-01-29 Kenneth Wargon Flexible sheet audio-video device
TWI353063B (en) * 2007-07-27 2011-11-21 Au Optronics Corp Photo detector and method for fabricating the same
US8148236B2 (en) * 2007-11-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing thereof
JP5292066B2 (ja) 2007-12-05 2013-09-18 株式会社半導体エネルギー研究所 表示装置
US8125558B2 (en) * 2007-12-14 2012-02-28 Texas Instruments Incorporated Integrated image capture and projection system
JP5572307B2 (ja) * 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
CN101285975B (zh) * 2008-06-06 2010-06-23 友达光电股份有限公司 光感测单元及具此光感测单元的像素结构与液晶显示面板
TW201003850A (en) * 2008-07-10 2010-01-16 Au Optronics Corp Semiconductor device, display apparatus, electro-optical apparatus, and method for fabricating thereof
TWI372277B (en) * 2008-09-04 2012-09-11 Au Optronics Corp Display module
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
RU2487422C1 (ru) * 2009-09-07 2013-07-10 Шарп Кабусики Кайся Схема пикселя и устройство отображения
US8373825B2 (en) * 2009-11-30 2013-02-12 Sharp Kabushiki Kaisha Display device
JP5219162B2 (ja) * 2009-12-29 2013-06-26 シャープ株式会社 光電変換装置
US8384690B2 (en) * 2010-05-14 2013-02-26 International Business Machines Corp. Interface device with integrated solar cell(S) for power collection
TWI460611B (zh) * 2010-06-07 2014-11-11 Au Optronics Corp 觸控鍵盤
JP5530839B2 (ja) * 2010-07-09 2014-06-25 パナソニック株式会社 固体撮像装置
KR101743268B1 (ko) * 2010-12-06 2017-06-05 삼성디스플레이 주식회사 광 센서 및 이를 갖는 표시장치
KR101882709B1 (ko) * 2011-07-12 2018-07-27 엘지전자 주식회사 이동 단말기
TWI461989B (zh) * 2011-08-25 2014-11-21 Au Optronics Corp 觸控元件
JP2013161810A (ja) 2012-02-01 2013-08-19 Japan Display West Co Ltd 撮像装置およびその製造方法ならびに撮像表示システム
TWI477874B (zh) * 2012-03-28 2015-03-21 E Ink Holdings Inc 顯示裝置及其製作方法
JP6190228B2 (ja) * 2013-09-24 2017-08-30 株式会社東芝 半導体装置及び撮像装置
CN105336752B (zh) * 2014-06-23 2018-08-21 上海箩箕技术有限公司 面阵传感器装置及其形成方法
JP2016009777A (ja) * 2014-06-25 2016-01-18 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
CN105095872B (zh) * 2015-07-29 2018-10-02 京东方科技集团股份有限公司 一种基板及其制备方法、指纹识别传感器、指纹识别装置
CN105573549B (zh) * 2015-12-08 2018-12-25 上海天马微电子有限公司 阵列基板、触控屏和触控显示装置及其制作方法
CN105741748B (zh) * 2016-03-04 2019-05-14 京东方科技集团股份有限公司 一种显示面板、显示设备及制作方法
CN109901333B (zh) * 2019-02-26 2021-11-30 江西合力泰科技有限公司 一种基于太阳能液晶显示屏的手机太阳能充电方法
CN110120432B (zh) * 2019-05-23 2021-03-16 京东方科技集团股份有限公司 光电转换结构和显示面板
CN113064307B (zh) * 2021-03-19 2022-02-22 深圳市华星光电半导体显示技术有限公司 阵列基板及制作方法、显示面板
WO2023205141A1 (en) * 2022-04-20 2023-10-26 Smith & Nephew, Inc. Bone repair compositions comprising polythiourethane and uses thereof

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688111A (en) 1979-12-19 1981-07-17 Citizen Watch Co Ltd Liquid crystal display device with solar battery
US5650637A (en) * 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
JPS6064467A (ja) 1983-09-20 1985-04-13 Seiko Epson Corp 固体イメ−ジセンサ
US4862237A (en) * 1983-01-10 1989-08-29 Seiko Epson Corporation Solid state image sensor
JPH03135524A (ja) * 1983-09-20 1991-06-10 Seiko Epson Corp 固体イメージセンサ
JPS60210869A (ja) 1984-06-29 1985-10-23 Hitachi Ltd 固体撮像素子
JPS633454A (ja) 1986-06-24 1988-01-08 Seiko Epson Corp 固体撮像装置及びその製造方法
US4876597A (en) * 1987-09-04 1989-10-24 Adt Security Systems, Inc. Video observation systems
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
JPH0423470A (ja) * 1990-05-18 1992-01-27 Fuji Xerox Co Ltd イメージセンサ
JPH04109776A (ja) 1990-08-30 1992-04-10 Olympus Optical Co Ltd 固体撮像装置
JP2765635B2 (ja) * 1991-01-11 1998-06-18 キヤノン株式会社 光電変換装置
US5567956A (en) * 1991-03-27 1996-10-22 Canon Kabushiki Kaisha Information processing apparatus including a photoelectric conversion element having a semiconductor layer with a varying energy band gap width
US5589847A (en) * 1991-09-23 1996-12-31 Xerox Corporation Switched capacitor analog circuits using polysilicon thin film technology
KR960005160B1 (ko) 1992-01-31 1996-04-22 주식회사유공 소비자용 살균 조성물
GB9202693D0 (en) * 1992-02-08 1992-03-25 Philips Electronics Uk Ltd A method of manufacturing a large area active matrix array
JP2791620B2 (ja) 1992-03-09 1998-08-27 株式会社半導体エネルギー研究所 電子装置
GB9209734D0 (en) * 1992-05-06 1992-06-17 Philips Electronics Uk Ltd An image sensor
JP3282216B2 (ja) 1992-07-03 2002-05-13 カシオ計算機株式会社 入出力デバイスおよび入出力装置
JP3347423B2 (ja) 1993-08-31 2002-11-20 キヤノン株式会社 液晶表示装置
DE69330709T2 (de) 1992-12-28 2002-07-11 Canon K.K., Tokio/Tokyo Blickrichtungsdetektor und Kamera mit diesem Detektor
JP3155846B2 (ja) 1992-12-28 2001-04-16 キヤノン株式会社 液晶表示装置、該表示装置を有するビューファインダー及び該ビューファインダーを有する電子カメラ
KR950002087B1 (ko) 1992-12-29 1995-03-10 현대전자산업주식회사 피포(fifo)기능을 수행하는 레지스터 회로
JP2791635B2 (ja) * 1993-12-24 1998-08-27 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6413805B1 (en) * 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
GB9311129D0 (en) * 1993-05-28 1993-07-14 Philips Electronics Uk Ltd Electronic devices with-film circuit elements forming a sampling circuit
KR960001193B1 (ko) * 1993-06-19 1996-01-19 엘지전자주식회사 일체형 입출력 소자
JPH0786570A (ja) * 1993-06-29 1995-03-31 Victor Co Of Japan Ltd 半導体装置
JPH0926603A (ja) 1995-05-08 1997-01-28 Semiconductor Energy Lab Co Ltd 表示装置
JPH0943627A (ja) 1995-05-19 1997-02-14 Sharp Corp 液晶表示装置およびその製造方法
US6069674A (en) * 1995-05-19 2000-05-30 Sharp Kabushiki Kaisha Liquid crystal display apparatus
JPH0982981A (ja) 1995-09-19 1997-03-28 Sony Corp 薄膜半導体装置の製造方法
KR970022424A (ko) * 1995-10-12 1997-05-28 김광호 콘택 이미지 센서가 내장된 액정 표시 장치
US5831699A (en) * 1996-04-29 1998-11-03 Motorola, Inc. Display with inactive portions and active portions, and having drivers in the inactive portions
US6005648A (en) 1996-06-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4027465B2 (ja) * 1997-07-01 2007-12-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその製造方法
JP4044187B2 (ja) 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
US6277679B1 (en) * 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
JP3463627B2 (ja) * 1999-09-30 2003-11-05 富士電機株式会社 飲料カップ供給装置
KR100952087B1 (ko) 2003-02-20 2010-04-13 램 리써치 코포레이션 패터닝된 기판의 메가소닉 세정을 위한 방법 및 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398707B (zh) * 2008-05-16 2013-06-11 Au Optronics Corp 光感測單元及具有此光感測單元之畫素結構與液晶顯示面板
TWI781720B (zh) * 2021-08-10 2022-10-21 友達光電股份有限公司 光偵測裝置

Also Published As

Publication number Publication date
US6274861B1 (en) 2001-08-14
US7510917B2 (en) 2009-03-31
US6784411B2 (en) 2004-08-31
US20020125410A1 (en) 2002-09-12
KR100541787B1 (ko) 2006-01-11
US6087648A (en) 2000-07-11
US6399933B2 (en) 2002-06-04
US20070249084A1 (en) 2007-10-25
KR100530678B1 (ko) 2006-03-22
US7235814B2 (en) 2007-06-26
US20020011553A1 (en) 2002-01-31
US20040217357A1 (en) 2004-11-04
JP4027465B2 (ja) 2007-12-26
KR19990013496A (ko) 1999-02-25
JPH1124105A (ja) 1999-01-29

Similar Documents

Publication Publication Date Title
TW444265B (en) Active matrix display device and method of manufacturing the same
JP4271268B2 (ja) イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
US10473990B2 (en) Manufacture method of low temperature poly-silicon array substrate
US6255705B1 (en) Producing devices having both active matrix display circuits and peripheral circuits on a same substrate
JP4646951B2 (ja) センサ付き表示装置
TW578123B (en) Pixel having transparent structure and reflective structure
JP4827796B2 (ja) センサ付き表示装置
TW386222B (en) Electric device having non-light emitting type display and method for making the electric device
JP4043002B2 (ja) 表示装置及びその作製方法並びに表示装置を用いた電子機器
JP2007299012A (ja) 表示装置
US6703266B1 (en) Method for fabricating thin film transistor array and driving circuit
US7361947B2 (en) Photoelectric conversion element and display device including the same
JP2009016855A (ja) イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JP4163156B2 (ja) 表示装置
JP5138107B2 (ja) イメージセンサ、電子機器
JP4550096B2 (ja) 半導体装置
TW560001B (en) Method of forming reflective liquid crystal display and driving circuit
US20070051954A1 (en) TFT array substrate of TFT LCD having large storage capcitor and method for manufacturing same
JPH0945925A (ja) トランジスタの製造方法，薄膜トランジスタの製造方法，表示装置
KR100212270B1 (ko) 박막 트랜지스터 및 그 제조 방법
JPH0982982A (ja) 薄膜トランジスタ及びアクティブマトリクス表示装置
TWI249853B (en) Thin film transistor array structure
JP2005351934A (ja) アクティブマトリクス表示素子
JPH1197704A (ja) 半導体装置およびその作製方法
JPH1197703A (ja) 半導体装置およびその作製方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees