TWI249853B - Thin film transistor array structure - Google Patents

Abstract

A thin film transistor array structure is provided. Thin film transistor array structure comprises a transparent substrate, a plurality of transistors, a plurality of scan lines, a plurality of data lines, one or more dielectric layer with hydrogen, and a patterned conductive layer. The transistors are disposed on the substrate; the dielectric layer with hydrogen covers the transistors; and the patterned conductive layer is disposed on the dielectric layer with hydrogen. Each transistor comprises a gate, a source and a drain. The gates electrically connect with the scan lines, and the source/drain electrically connect with the data lines and the patterned conductive layer respectively.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a liquid crystal display structure, and more particularly to a thin film transistor array substrate structure (TFT array). . Prior Art The rapid advancement of the multimedia society has largely benefited from the dramatic advances in semiconductor components or human-machine display devices. In terms of displays, cathode ray tubes (CRTs) have always dominated the display market in recent years due to their excellent display quality and economy. However, for the environment in which most individuals operate the terminal/display device on the table, or from the perspective of environmental protection, if the energy saving trend is predicted, the cathode ray tube still has many problems due to space utilization and energy consumption. The need for light, thin, short, small, and low power consumption does not provide an effective solution. Therefore, thin-film liquid crystal displays (TFTs) with superior properties such as high enamel, space utilization efficiency, low power consumption, and no radiation have gradually become the mainstream of the market. On a thin film transistor array substrate (TFT array), the thin film transistors arranged in an array are mainly connected in series by a scan wiring (sca η 1 ine ) and a data wiring (data 1 ine ), and each of the thin film transistor arrays The thin film electro-crystal system is used to control a corresponding halogen electrode. Here, the thin film transistor is a switching element having three terminals of a gate and a source/drain, and the gate of the thin film transistor is electrically connected to the scan wiring, and the source/bottom of the thin film transistor is It is electrically connected to the data wiring and the halogen electrode. Further, in the thin film transistor, a semiconductor layer corresponding to the gate between the source and the drain (amorphous germanium)

8538twf1.pt c Page 7 1249853 _ Case No. 92114349_年月日日__ V. Description of invention (2) Material or polysilicon material) is the channel layer (channe 1), which is usually equipped with a gate between the channel layer and the gate The gate insulating layer (gateinsu 1 ating 1 ayer ), and the film quality of this gate insulating layer will directly affect the performance of the entire thin film transistor. In the fabrication process of the conventional thin film transistor array substrate, after the gate insulating layer is formed, other etching steps are usually required, and these etching steps often damage the gate insulating layer. Taking the thin film transistor of the top gate type (t 〇pgate ) as an example, the etching process performed when the gate is formed is likely to damage the film quality of the gate insulating layer; and the bottom gate type (b)薄膜11 〇mgate ) is a thin film transistor. Although the gate is formed before the gate insulating layer, but the gate layer above the gate insulating layer is defined, the etching process is still damaged to the gate. Film quality of the insulating layer. However, after the fabrication of the thin film transistor is completed, the subsequent fabrication of the film layer, such as the dielectric layer (inorganic material such as SiOx, SiNx, etc.) and the preparation of the halogen electrode, does not repair the gate insulating layer. Therefore, it is known that the film quality of the gate insulating layer in the thin film transistor is not good, which often affects the operation of the device. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a thin film transistor array substrate structure in which one or more hydrogen-containing dielectric layers are disposed between a gate metal layer and a metal layer thereon, by hydrogen in a hydrogen-containing dielectric layer The atom repairs the gate insulating layer to enhance the performance of the component. In order to achieve the above object of the present invention, a thin film transistor array base is proposed.

8538twf1.ptc Page 8 1249853 Case No. 92114349 _η 曰 Amendment V. Description of the invention (3) A substrate, a plurality of thin film transistors, a plurality of layers, or a plurality of layers of hydrogen-containing dielectric layers. Wherein, the thin film electro-crystal system is disposed on the transparent substrate, and the covered conductive layer is disposed on the hydrogen-containing dielectric, including the gate, the source/drain, and the three electrical connections, and the source / 汲 系 is connected to the power supply. The material of the layer is, for example, a spin-on glass of an organic material layer (Spin On Glass, a mixture of a compound/a nitrogen telluride, or a mixture of a compound/azepine compound. This may be, for example, a S i -Η bond or a plate. The structure is mainly composed of a transparent scanning wiring, a plurality of data wirings, and a transparent substrate on which the patterned conductive layer is formed, a hydrogen-containing dielectric layer, the above-mentioned thin film transistor, and a layer, each of the thin film transistor terminals, Gate electrode, scanning wiring material wiring, and patterned conductor layer, in the present invention, a hydrogen-containing dielectric film, a water-containing S 0 G ), an organic material layer, and an oxygen-containing water-sprayed glass and oxygen oxime, The material of the hydrogen-containing dielectric layer is also a Si-OH bonded So-gel film. In the present invention, the hydrogen-containing dielectric layer can be used, for example, as an interlayer dielectric layer, a planarization layer, a reflector bump layer, or a wide viewing angle bump layer. In the present invention, the thin film transistor on the transparent substrate may be an amorphous germanium thin film transistor (a-Si TFT) or a polycrystalline germanium thin film transistor (p-Si TFT). Further, the above-mentioned thin film transistor is, for example, a thin film transistor of a top electrode type or a thin film transistor of a bottom electrode type. In the present invention, the patterned conductor layer on the hydrogen-containing dielectric layer is, for example, a plurality of halogen electrodes, and the halogen electrodes are, for example, transmissive electrodes.

8538twf1.pt c Page 9 1249853 _ Case No. 92114349_年月日日_« V. Invention description (4) (transparent pixel electrode) or reflective electrode said easy to detail and make more, 3 o'clock The excellent attachments and the combination of the special and the special cases are better than the ones that are better than the ones that are given by the special essays.

The crystalline electric film machine with the layered dielectric media is thin and has no layer. Although the quality of the cover material is not covered, the crystal is electrically charged. Membrane such as thin NX in i 彳S type | know, Xi X touch thin layer for the layer as the edge of the electrode to interrogate the nitrogen in the medium containing the crystal to make the film thinner than this pair, but this cause / ο Useless help and unprotected quality and quality have a wide-angle or layer, the edge layer is extremely convex, and the slab is repaired, the layer is flat, and the hydrogen is contained. The so-called upper body block crystal convex electric angle of the bulk crystal electric film thin crystal multi-energy type core ^ ul top only to illustrate the following example of the implementation of the state of the type of the type of pole type electric pole electric top The use of hydrogen to make the crystal-containing energy is only a thin film of the crystal, and the non-definite state of the crystal is in the form of a non-coherent shape but a crystal pole. The electric film is thin and thin. There are many examples of this, and this is also the case. The non-middle-shot structure of the anti-reflection film is used to penetrate the body of the film. The crystal should be ve, the electricity can be tl, the film is also ec, the thin case is fl, the ns crystal is ^a hr Lr t ^ ^ ( The bottom of the bottom and the technique are worn by the technique. The half of the body is the thin habit of the crystal habit or the electro-cooking type. The thin film is better than that of the body--the Mingfa is based on the picture ο. Crystal liquid plate base r-J The first light through the reference to a please from the 0 system to the main board of the board of the base board of the array of the base crystal array film thin electric, thin film in the film, Shi Duo, Ben) 0

8538twf1.pt c Page 10 1249853 Case No. 92114349 Yearly Revision 5, Invention Description (5) Body 1 0 2, Multiple Scanning Wiring 1 0 4, Multiple Data Wiring 1 0 6, and a Nuclide Electrode 1 0 8 constitutes. Wherein, the extending direction of the scanning wiring 104 is perpendicular to the extending direction of the data wiring 106, and the area between the adjacent two scanning wirings 104 and the adjacent two data lines 1 and 6 is disposed. There is a thin film transistor 1 0 2 and a halogen electrode 1 0 8 . Each of the thin film transistors 110 on the transparent substrate 100 includes three terminals of a gate and a source/drain, and the gate is electrically connected to the scan wiring 104, and the source/drain is It is electrically connected to the data wiring 1 0 6 and the halogen electrode 1 0 8 . The scan wiring 1 0 4 is used to control the on/off of the thin film transistor 102, and when the thin film transistor 1 0 2 is in the "on" state, the data wiring 1 0 6 can write image information into the thin film transistor. 1 0 2 controlled pixel electrode 1 0 8 . 2 is a cross-sectional view showing a transmissive thin film transistor array substrate in accordance with a preferred embodiment of the present invention. Referring to FIG. 2, a plurality of thin film transistors 20 2 arranged in an array are arranged on the transparent substrate 200, and a polycrystalline germanium film transistor 20 of the top electrode type is taken as an example, which is mainly composed of an island polysilicon. 2 〇 4, a gate insulating layer 2 0 6, and a gate 2 0 8 constitute. The island-shaped polysilicon 205 includes a channel layer 2 0 4a and a two-source/drain-doped region 2 0 4b. The gate insulating layer 206 is disposed on the transparent substrate 200 and covers the island. The polycrystalline silicon is 2 0 4 , and the gate insulating layer 2 0 6 corresponding to the channel layer 2 0 4 a is provided with a gate 2 0 8 . In addition, the thin film transistor 2 0 2 is covered by a hydrogen-containing dielectric layer 2 10 , and the source/drain metal 2 1 2 is penetrated through the hydrogen-containing dielectric layer 2 10 and the source/drain The impurity region 2 0 4 b is electrically connected such that the source/drain doped region 2 0 4 b is externally connected. In view of the above, the material of the hydrogen-containing dielectric layer 210 is, for example, an organic material layer.

8538twf1.pt c Page 11 1249853 _ Case No. 92Π4349_年月曰 Revision _ V. Description of invention (6) (organic film), water-based spin-on glass (S0 G), organic material layer and A mixture of oxonium halides/nitrides or a mixture of aqueous spin-on glass and oxonium/nitroxides. Further, the material of the hydrogen-containing dielectric layer 210 may be, for example, an S〇-gel film containing an S 1 - Η bond or a Si-〇 H bond. Referring to FIG. 2, for example, a flat layer 2 1 4 is disposed on the hydrogen-containing dielectric layer 210, and the material of the flat layer 2 14 may be the same as the material of the hydrogen-containing dielectric layer 2 1 0, or It is an inorganic dielectric material such as an oxygen halide or a nitrogen halide. A patterned conductor layer 2 16 is disposed on the flat layer 2 14 , and the patterned conductor layer 2 16 is electrically connected to the source/drain metal layer 2 1 2 by, for example, an opening 2 15 . The patterned conductor layer 2 16 can be controlled by the thin film crystal 2 0 2 . In other words, the patterned conductor layer 2 16 is a so-called transmissive pixel electrode. In the present embodiment, the conductor layer 2 16 is, for example, a transparent material such as indium tin oxide (I T 0 ) or indium zinc oxide. 3 is a cross-sectional view showing a reflective thin film transistor array substrate in accordance with a preferred embodiment of the present invention. Referring to FIG. 3, a plurality of thin film transistors 3 0 2 arranged in an array are arranged on the transparent substrate 300, and a polycrystalline germanium thin film transistor 3 0 2 of a top electrode type is taken as an example, which is mainly composed of an island polysilicon. 3 0 4, a gate insulating layer 3 0 6, and a gate 3 0 8 constitute. The island-shaped polysilicon 300 includes a channel layer 3 0 4a and a two-source/drain-doped region 3 0 4 b, and the gate insulating layer 3 0 6 is disposed on the transparent substrate 300 and covered. The island-shaped polysilicon 3 0 4 and the gate insulating layer 3 0 6 corresponding to the channel layer 3 0 4 a are provided with a gate 3 0 8 . In addition, the thin film transistor 302 is covered by a hydrogen containing dielectric layer 310, and the patterned conductor layer 312 is covered with a hydrogen containing dielectric.

8538twf1.p t c Page 12 1249853 _ Case No. 92114349_年月日日__ V. Description of invention (7) Layer 3 1 0. The hydrogen-containing dielectric layer 310 is used as a reflective bump layer having a plurality of reflective bumps 310a on the surface, and the patterned conductor layer 3 1 2 disposed on the hydrogen-containing dielectric layer 310 includes a source. The pole/deuterium metal 3 1 2 a and the reflective pixel electrode 312b are two parts, the source/; and the pole metal 312a penetrates the hydrogen-containing dielectric layer 310 and the source/drain doped region 3 0 4 b The connections are made such that the source/drain doped regions 3 0 4 b are externally connected. In addition, since the surface of the hydrogen-containing dielectric layer 310 has reflective bumps 310a, the reflective pixel electrode 312b can reflect the light of the outside or the front light source (fr ο nt 1 ight ) more effectively and uniformly. In order to achieve the purpose of display. In the above embodiments, the hydrogen-containing dielectric layer may be used as an inner dielectric layer, a flat layer (hydrogen-containing dielectric layer 210), and a reflective bump layer (hydrogen-containing dielectric layer 310) on the array substrate. As a wide viewing angle bump layer. These layers not only have their functions, but also have the effect of repairing the gate insulating layer. From the above, the present embodiment can effectively integrate with the process of the thin film transistor array substrate and can improve the performance of the device. In summary, the thin film transistor array substrate structure of the present invention has at least the following advantages: 1. The thin film transistor array substrate structure of the present invention can effectively repair the gate insulating layer to improve the performance of the device. 2. In the thin film transistor array substrate structure of the present invention, the hydrogen-containing dielectric layer can be used as an inner dielectric layer, a flat layer, a reflective bump layer, or a wide viewing angle bump layer, which can be applied to various types (wearing Transparent, reflective) panel. Although the present invention has been disclosed above in a preferred embodiment, it is not

8538 twf1.ptc Page 13 1249853 _ Case No. 92114349 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The scope of protection of the present invention is defined by the scope of the appended claims.

8538 twf1.ptc page 14 1249853 _ case number 92114349 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2 is a cross-sectional view showing a transmissive thin film transistor array substrate according to a preferred embodiment of the present invention; and FIG. 3 is a cross-sectional view showing a reflective thin film transistor array substrate according to a preferred embodiment of the present invention. schematic diagram. [Illustration description] 1 0 0 : Transparent substrate 1 0 2 : Thin film transistor 1 〇 4 : Scanning wiring 1 0 6 : Data wiring 1 0 8 : Alizarin electrode 200, 300: Transparent substrate 2 0 2, 3 0 2: thin film transistor 204, 304: island polycrystalline silicon (polysilicon island) 2 0 4a, 3 0 4a: channel layer 2 0 4 b, 3 0 4 b : source/drain doping region 2 0 6 , 3 0 6 : gate insulating layer 2 0 8 , 3 0 8 : gate 210, 310: hydrogen-containing dielectric layer 212, 312a: source/drain metal layer (S/D metal) 2 1 4 : flat Layer 2 1 5 : opening

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Claims (1)

1249853 _ Case No. 92114349_年月日日_iMz_ VI. Patent application scope 1. A thin film transistor array substrate structure comprising: a transparent substrate; a plurality of thin film transistors, wherein the thin film transistors are disposed on the transparent substrate Each of the thin film transistors includes a gate and a source/drain; a plurality of scan lines are disposed on the transparent substrate, and the scan lines are connected to the gates; and a plurality of data lines are arranged On the transparent substrate, the data wires are electrically connected to the source/drain electrodes; at least one hydrogen-containing dielectric layer disposed on the transparent substrate and covering the films a transistor, wherein the material of the hydrogen-containing dielectric layer is selected from the group consisting of an organic material layer, a water-containing spin-on glass, an organic material layer, a mixture of oxcarbite and a nitrogen telluride, a water-containing spin-on glass, and oxygenation. a mixture of a substance and a nitrogen telluride, and a group of films formed of a sol-gel (So-gel) containing a Si- Η bond or a Si-OH bond; and a patterned conductor layer The patterned conductor layer is disposed on the hydrogen-containing dielectric layer, and the patterned conductor layer is electrically connected to the source/drain electrodes. 2. The thin film transistor array substrate structure of claim 1, wherein the hydrogen-containing dielectric layer is an inner dielectric layer. 3. The thin film transistor array substrate structure of claim 1, wherein the hydrogen-containing dielectric layer is a flat layer. 4. The thin film transistor array substrate structure of claim 1, wherein the hydrogen-containing dielectric layer is a reflective bump layer. 8538 twf1.pt c pp. 12 498 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ It is a bump layer with a wide viewing angle. 6. The thin film transistor array substrate structure of claim 1, wherein the thin film electro-crystalline system is an amorphous germanium thin film transistor. 7. The thin film transistor array substrate structure according to claim 1, wherein the enamel film electrocrystal system is a polycrystalline slab film transistor. 8. The thin film transistor array substrate structure according to claim 1, wherein the thin film electro-crystal system is a top electrode type thin film electro-crystal. 9. The thin film transistor array substrate structure according to claim 1, wherein the bay membrane electro-crystal system is a bottom electrode type film dielectric crystal. The thin film transistor array substrate structure of claim 1, wherein the patterned conductor layer comprises a plurality of halogen electrodes. The thin film transistor array substrate structure as described in claim 1, wherein the halogen electrodes are transmissive electrodes. The thin film transistor array substrate structure of claim 1, wherein the halogen electrodes are reflective electrodes. 8538twf1.ptc Page 18