TW200419275A - Pixel structure and method of repairing the same - Google Patents

Abstract

A pixel structure and method of repairing the same are provided. The pixel structure is driven by a scan line and a data line. The structure comprises a first thin film transistor, a second thin film transistor, and a pixel electrode. The first thin film transistor has a first gate and a first source/drain, wherein the first gate is electrically connected the scan line and one end of the first source/drain is electrically connected the data line. The second thin film transistor has a second gate and a second source/drain, wherein the second gate is electrically floated and one end of the second source/drain is electrically connected the data line. The pixel electrode is electrically connected the other end of the first source/drain and the other end of the second source/drain.

Description

200419275 V. Description of the invention (1) The technical field to which the invention belongs The present invention relates to a kind of book sound i 3 ancient ice sun animal, 3 pixel structure (pixel structure) and scholar repair side: and especially about a Energy structure and repair method. Door "儿 > The previous technology of Fufengzhidan With the development of high-tech, video 0 or video devices have become in-envious ° ^^ σ, j other than digital video. Digital video or video installation : Common products. This displays relevant information. The user can control the operation of the device by being an important component. f In order to read the information from the unfavorable, or further control In order to match the modern life mode, molybdenum such as dandan / μ tends to be thin and light. The traditional cathode layer ray "shirt: the volume of the device is gradually decreasing, but it needs to occupy a large volume and consume: line = benefit matching = still has its advantages" bulk manufacturing technology, panel display piano σ photoelectric technology and semiconductor

Ig-. 〇 Beibuyi has been developed into the current common pressure operation, no light ray scattering, light weight 1 low wire tube (cathode called CRT) made by the advantages of: It is impossible to display with a flat panel. R, +, his ten-panel display is not as good as a plasma display and electro-fabricated display. Point a < Zuo Shi mainly looks, and-诎 通 has become a display research in recent years. , Night quilt: see the mainstream of twentieth-century displays. At present, thin film transistors (referred to as T F T) liquid crystal displays have become the mainstream for development. On the panel, the 2! Body crystal display is mainly composed of a thin film transistor array substrate and a first array substrate and a liquid crystal layer, of which the thin film transistor

10741twf.ptd Page 6 200419275 V. Description of the invention (2) The array substrate is a common t structure with multiple pixel structures arranged in an array. * The structure consists of two layers of metal and one layer of transparent electricity. ^ = =, Recently When the repairing device (device) is damaged, the '= structure is improved, and in order to explain the structure of the day element, each structure is divided into two figures (see Figures 1 A to 1 C). Figures 1A to 1C are schematic top views of a conventional structure with repairing bright spots. Please refer to Section VII. The conventional day-light system J is formed on a substrate 100-a gate 102, a scan line 104, and a repair line 106, among which the scan line 04 and the gate 10, and the gate 102, the scanning wiring 104, and the repair wiring 106 described above are the first gold layer (also called M1). Thereafter, a dielectric layer (not shown) is formed on the substrate 100 to cover the gate electrode 102, the cat wiring 104, and the repair wiring 106. Next, an amorphous silicon channel layer 108 is formed over the gate electrode 102. Then, referring to FIG. 1B, a source / drain 110a / 110b is formed on the amorphous silicon channel layer 108, and at the same time, a data wiring 114 connected to the source 1103 is formed, among which the gate 1 is 2. The channel layer 108 and the source / drain 110a / 11 Ob system constitute a thin film transistor 112. In addition, while the source / drain 11 Oa / 11 Ob is formed, a disconnection structure 11 6 is also formed above the repair wiring 丨 〇6, and the interruption structure 116-end is connected to the drain 丨 丨 b, One end is connected to the data wiring 11 4. The source / drain 丨 丨 a / 1 丨 b, the data wiring 114, and the disconnection structure 116 are the second metal layer (also referred to as M2). Subsequently, referring to FIG. 1C, a day electrode 12 is formed on the substrate 丨 00, wherein the pixel electrode 1 2 0 is connected to the thin film transistor 11 2 through the contact window 丨 8 and the drain electrode 11 2 〇b Electrical connection. When the thin film transistor in the figure

10741twf.ptd Page 7 200419275 V. Description of the invention (3) ---------- In case of failure, ^ 1 22 "First use the laser to blow off the gate 1 02 and the scanning wiring 1 〇4 The dielectric layer ## 1 is used to open the circuit between the circuit breaking structure 116 and the repair wiring 106 by laser and form a thin vertical γ layer to connect the circuit breaking structure by laser CVD. 6 and repair Wiring 丨 〇6. However, after modification, the daylight structure will no longer have active characteristics and advantages, but can only be prevented from becoming a bright spot. ^ 'The design of the two thin film transistors will & when the device is damaged, the panel forms a problem of light / dark spots, especially in the case of forming bright spots, it is not easy to repair, and it makes the defects of the panel more obvious. . In addition, when a compensation film is added to a large f-inch panel to increase the viewing angle, after repairing the bright spots = it is easy to form bright spots at a certain viewing angle due to light leakage. In addition, the day and night after repairing will no longer have the active characteristics and advantages, so the repair method using driving knowledge will still produce flaws on the display. The purpose is to provide a daylight structure and its repair method, which can avoid the formation of light / dark spots on the panel when 7L pieces are damaged. Another object of the present invention is to provide a daylight structure and its repair method 'to improve the repair rate of bright spots in the south. It is still another object of the present invention to provide a diurnal structure and a repairing method thereof so that the repaired diurnal still has active characteristics and advantages. According to the above and other objectives, the present invention proposes a pixel structure, which is suitable for driving by a scanning wiring and a data wiring. The "dual-day" pixel structure includes a first thin-film transistor, a second thin-film transistor, and a single-day transistor.

200419275 V. Description of the invention (4) Π: The film transistor has a -first-free pole and a -second-source / metaline: the gate is electrically connected to the scanning wiring, and the -source / 〆 There are two-3 taxis connected to this breeding wiring. The second thin-film transistor has, w, two i and a second source / drain. The second gate is electrically two. One end of the source / drain of the φφ factory is electrically connected to the data wiring. The other two / ', μ are electrically connected to the other end of the first source / drain and the other end of the first source />. Umi proposed a method for repairing the daytime structure, which is used to repair the two-: cut: structure: Including the first source / drain connected to the data wiring, true ϋ ± one, so that the first 溥 film transistor does not The data conductor is continuously driven to repair the conductor lightning body: the repair process forms a repair conductor layer and is electrically connected to the scanning wiring by repairing the second gate of the τΐ brother, so that the second thin neck transistor is driven by the scanning wiring and the data wiring.运 # u 使 弟 厚 腐 一 资 ΐ tί = a daylight structure suitable for a second ballast film by a scanning wiring = this pixel structure includes a first thin film transistor, a thin film transistor And there are-a first t-body layer and a diurnal electrode. The first gate electrode is electrically connected to the scan, and the first gate electrode is electrically connected to the data wiring. One end of the first source / drain and-the second source / drain, the first and the gate ': the body has-the second ~ connected to the sweep green and connected to the data wiring. The pseudo-conductor layer is electrically connected to the pixel electrode: the t-body layer is located next to the second gate. In addition, the other end of the pole / drain. , The other source of the 4-source / drain and the second source

V. Description of the invention (5) The present invention also drives the connection and connection of the book described in the previous paragraph, and repairs the thin film transistor film to reduce the other one in the normal state, and still makes it easy to display. By using the body layer, the body is cleaned in the daylight state, and the spare thin structure is retained. The following features are cut off by the present invention. The junction includes the following steps: firstly, the first repairing electrode and the data are destroyed when the damaged body is replaced and other embodiments are constructed, and when the first thin film is formed into a conductor layer, the wiring is destroyed, so that The advantages and purposes, and the complementary method are used to repair the source / non-electrode and the data transistor from the data wiring-repair the conductor layer, and electrically connect to make the second move. The thin film transistor can reduce the light / dark spot problem of the panel by using laser repair. The characteristics and advantages can be more clearly described in the attached drawings. For detailed implementation, the present invention is in the same daylight structure. Two thin-film transistors are designed, and in order to explain the structure of each layer in detail, they are divided into three diagrams (see Figures 2A to 2C) for illustration. Figures 2A through 2C are schematic top views of a pixel structure according to a preferred embodiment of the present invention. Please refer to FIG. 2A. The pixel structure of the present invention is to first form a first gate electrode 212, a second gate electrode 222, and a scanning wiring 2 0 on a substrate 200. The scanning wiring 2 0 4 It is connected to the first gate 2 1 2 and the second gate 2 2 2 is electrically floating. The above-mentioned gates 2 1 2, 2 2 2 and scanning wiring 2 0 4 are the first metal layer (also referred to as M1). After that, a gate dielectric layer (not shown) is formed on the substrate 2000 to cover the gate electrodes 2 1 2 and 2 2 2.

10741twf.ptd Page 10 200419275 V. Description of the invention (6) and scanning wiring 204. Next, a first channel layer 214 and a second channel layer 224 are formed above the first gate electrode 212 and the second gate electrode 222, respectively. The material of the channel layers 2 1 4 and 2 2 4 is, for example, amorphous stone. Then, referring to FIG. 2B, a first source / drain 2i6a / 216b and a second source / drain 2268/2261 are formed on the first channel layer 214 and the second channel layer 224, respectively, and the first A drain 216b is electrically connected to the second drain 226b. At the same time, a data wiring 206 connected to the first source electrode 21 6a and the second source electrode 226a is formed, in which the gate electrode 212, the channel layer 214, and the source / drain electrodes 2 16a / 2 16b constitute the first operation in a normal state. A thin film transistor 210; the gate electrode 222, the channel layer 224 and the source / drain electrodes 226a / 226b constitute a second thin film transistor 220. In addition, although the thin film transistors 210 and 220 in this embodiment are thin film transistors with a bottom gate structure, the present invention can also be applied to thin film transistors with a top gate structure. It is worth noting that the thin film transistors 210 and 220 shown in FIG. 2A and FIG. 2B are amorphous silicon type thin film transistors (a-si TFT), which means that the thin film transistors 210 and 220 The material of the channel layers 214 and 224 is amorphous silicon, but those skilled in the art should know that the thin film transistors 210 and 220 in this case can also be low temperature polysilicon thin film transistors (Low Temperature PolySilicon) -TFT, referred to as LTPS-TFT). In addition, please continue to refer to FIG. 2B. The daylight electrode of the present invention can also form a first source / inverter 2 1 6 a / 2 1 6 b and a second source /; At the same time, a pseudo-conductor layer 230 is formed together, wherein the pseudo-conductor layer 230 is connected to the scanning wiring 204 through a third contact window 238 at one end.

10741twf.ptd Page 11 200419275 V. Description of the invention (7) The other end is located beside the second gate electrode 222. The first source / drain 216a / 216b, the second source / drain 226 & / 2261), the data wiring 206, and the pseudo-conductor layer 230 are the second metal layer (also referred to as M2). Subsequently, referring to FIG. 2C, a pixel electrode 240 'is formed over the substrate 200. The pixel electrode 240 is electrically connected to the drain electrode 216b of the thin film transistor 210 through the first contact window 218, respectively. And is electrically connected to the drain electrode 226b of the second thin film transistor 22 through the second contact window 228.

When the first thin film transistor 2 10 in Fig. 2C fails, a repair method can be performed, and the repaired daylight structure is shown in Fig. 3A. In addition, the daytime element structure of the present invention is that when the second gate electrode 2 2 2 and the scanning wiring 2 04 are designed to be adjacent to each other and electrically floated, it is not necessary to form a pseudo-conductor layer 230, and this kind of The daily structure will be repaired as shown in Figure 3B. Figures 3A and 3B are top schematic views of the pixel structure after repairing according to the repair method of the present invention. Please refer to FIG. ^. The biggest difference between the pixel structure after repair and that before repair is that the end 250 of the first source / drain 216a connected to the data wiring 20 6 is cut to make the first thin film transistor 21. Not driven by data wiring 20 6. In addition, the second gate electrode 222 and the pseudo-conductor layer 23 () are electrically connected through a repair conductor layer 310, so that the second thin film transistor body 22 is driven by the scanning wiring 204 and the data wiring 206.

In addition, please refer to FIG. 3B. The pixel structure in this figure does not need to form a quasi-conductor layer. Therefore, the biggest difference between the daytime pixel structure after repairing and the time before repairing is the first source / inverter 2 1 6a The end 250 connected to the data wiring 206 is cut off. In addition, the second gate electrode 222 and the data wiring 206 are electrically connected through a repair conductor layer 320 so that the second thin film transistor 22 is scanned.

10741twf.ptd Page 12 200419275 V. Description of the invention (8) Wiring 2 0 4 and data wiring 2 0 6 Drive Fig. 4 is a flow chart of the preferred structure according to the present invention. Please refer to Figure 4. In the end of the patch that connects the day junction / drain to the data wiring, Yan Di-the source body is not driven by the data wiring, the spleen flute in the basin ^ ^ 彳 更 弟-film binding For example, in the method of -terminal cutting of the crystal connection and λ and Ziyi 420, after a repairing conductor is formed by a laser repairing process, 'the second gate electrode and the scanning wiring are electrically conductive at the step of repairing the conductor layer,', In addition, the film transistor is driven by the scanning wiring and the data wiring, so that the second thin film forming method such as laser chemical vapor deposition is used. One patch repairs the conductor layer. In addition, the pixel electrode of the present invention has a pseudoconductor sound 23Or and two main 3A pictures.), Step 41 can be performed, which is 230 (see the second supplementary conductor layer, and the second The second gate is next to the repaired conductor layer to electrically connect the second gate electrode to the quasi-conductor layer. I :): The formation method of the bulk layer, such as laser chemical vapor deposition. The starry night invention was invented because it is designed in the same pixel structure-a unit works in the normal state, and the towel is damaged; :: =, the replacement process will replace the other with a thin film transistor < still active after the repair The characteristics and advantages of the formula. Μ 纟 And the repairing invention has been disclosed as above with a preferred embodiment, but it is not for those who are familiar with the art. 'It can be modified and retouched without departing from the spirit of the present invention. Therefore, the guarantee of the present invention consumes S Subject to the scope of the attached patent application.

10741twf.ptd Page 13 200419275 Simple explanation of the drawings ~ _ 图 Figures 1A to 1C are conventional top-view schematic diagrams with extravagant and structural features; pixels with redundant point effects are shown in Figures 2A to 2C 4 ~ -fe λ ^ structure top view according to the present invention; Figures 3A and 3B of the pixels of the embodiment are top views of the pixel structure according to the present invention; and > after the method is repaired Figure 4 of the repaired pixel structure of the painting is a flowchart of steps constructed in accordance with a preferred embodiment of the present invention. Graphical descriptions: 1 0 0, 2 0 0: substrate 1 0 2, 2 1 2, 2 2 2: gate 1 0 4, 2 0 4: scanning wiring 1 0 6: repair wiring 108, 214, 224: Channel layer 110a / 110b, 216a / 216b, 226a / 226b: source / drain 1 1 2, 2 1 0, 2 2 0: thin film transistor 1 1 4, 2 0 6: data wiring 1 1 6: open circuit structure 118, 218, 228, 238: contact windows 120, 240 · day electrode 122 connection 230 quasi-conductor layer 250 connection

10741twf.ptd Page 14 200419275 Simple description of the diagram 252: Area 3 1 0, 3 2 0: Repair conductor layer 4 0 0: Cut off the end where the first source / drain is connected to the data wiring 4 1 0: Borrow A repairing conductor layer is formed by a laser repairing process, and the second gate electrode is electrically connected to the pseudo conductor layer by the repairing conductor layer 420: A repairing conductor layer is formed by a laser repairing process, and the conductor is repaired by Layer electrically connects the second gate to the scanning wiring

10741twf.ptd Page 15

Claims (1)

200419275 6. Scope of patent application1. A daylight element structure, suitable for driving by a scanning line and a single line, the daylight element structure includes: ', 料 electrode plate transistor', the first thin film transistor has —The —n traces the wiring, and the "and" poles, where the -gate is electrically connected to the scan line, and one end of the source / drain is electrically connected to the data pole. A thin film transistor, the second thin film transistor has a second gate ^ Γ second source / drain, wherein the second gate is electrically floating, and "-" the source and one end of the electrode are electrically Connected to the data wiring; and a celestial electrode, which is electrically connected to the other end of the first source / light electrode and the other end of the second source / drain electrode. ≫ 2 · If applied The daytime element structure described in the first item of the patent scope, wherein the first / special film electric BΘ body further has a first channel layer, and the first channel is widely located between the first gate and the first source / drain. Between poles 3. The daylight structure as described in item 2 of the scope of patent application, wherein the material package of the first channel layer Including one of amorphous silicon and polycrystalline silicon. A 4. The pixel structure according to item 1 of the patent application scope, wherein the / second thin film transistor further has a second channel layer, and the second channel layer system It is located between the second gate and the second source / drain. 5 · The pixel structure described in item 4 of the scope of patent application, wherein the material of the second channel layer includes amorphous stone and polycrystalline One of Shi Xi. Sheet 6 · The pixel structure as described in item 1 of the patent application scope, wherein a thin film transistor and the second thin film transistor are thin film transistors with a top gate structure. 10741twf.ptd Page 16 200419275 VI. Patent Application Park — _______ A thin film crystal 'The transistor described in item 丨 of the patent application and the second thin fluorene transistor have a -primary structure, in which the first, _ Thin-film electricity with g-pole structure 8. The quasi-conductor layer described in Patent Application Scope ljf, wherein the quasi-conductor layer is electrically connected-on; the structure is further included-the quasi-conductor layer is located beside the second gate. $ Private wiring, and the 9.-J patent application scope! The item includes the following steps: · Fu magic repair method, connect the source / non-electrode with the data wiring so that the = th -thin film transistor is not driven by the data wiring; The end of the repair square pole and / or pole connected to the data wiring is cut off. The method for repairing the daytime structure includes a method for repairing the daytime structure of the laser chemical vapor deposition method. The second idler electrode and the scanning wiring are electrically connected to the thin film transistor by a laser repair process to repair the conductor layer. Driven by the scanning wiring and the data wiring. The method of applying the patent 1 0. As described in the patent application method, the method of breaking the first source includes laser burning. 11 · The day-to-day structure method as in the scope of the patent application, wherein the shape of the repaired conductor layer is----the exact square product. 1 2 · This patent application includes the following steps: @ $ δ s Ϊ Ϊ f ΐ 3 The source / 彡 and the end of the electrode connected to the Zike wiring are cut off, so that the f's film transistor is not affected by the Driven by the wiring of the capital department; and the formation of a puppet repair conductor layer by the field shot repair process, and the repair of the 10741twf.ptd page 17 200419275 6. The scope of the patent application for the supplementary conductor layer electrically connects the second gate electrode to the pseudo-conductor layer. Connected so that the second thin film transistor is driven by the scanning wiring and the data wiring. 1 3. The method of repairing a pixel structure as described in item 12 of the scope of the patent application, wherein the method of cutting off the first source / drain connected to the data wiring includes laser blow. 14. The method for repairing a pixel structure as described in item 12 of the scope of the patent application, wherein the method for forming the repaired conductor layer includes laser chemical vapor deposition. 10741twf.ptd Page 18