TW354402B - Charge pump circuit for a semiconductor memory device - Google Patents
Charge pump circuit for a semiconductor memory deviceInfo
- Publication number
- TW354402B TW354402B TW086113604A TW86113604A TW354402B TW 354402 B TW354402 B TW 354402B TW 086113604 A TW086113604 A TW 086113604A TW 86113604 A TW86113604 A TW 86113604A TW 354402 B TW354402 B TW 354402B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- high level
- pulse signal
- charge pump
- signal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970012109A KR100273208B1 (ko) | 1997-04-02 | 1997-04-02 | 반도체메모리장치의고효율전하펌프회로 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW354402B true TW354402B (en) | 1999-03-11 |
Family
ID=19501775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086113604A TW354402B (en) | 1997-04-02 | 1997-09-19 | Charge pump circuit for a semiconductor memory device |
Country Status (6)
Country | Link |
---|---|
US (2) | US5841725A (zh) |
JP (1) | JP2964240B2 (zh) |
KR (1) | KR100273208B1 (zh) |
DE (1) | DE19812096A1 (zh) |
GB (1) | GB2323952B (zh) |
TW (1) | TW354402B (zh) |
Families Citing this family (48)
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KR100264959B1 (ko) * | 1997-04-30 | 2000-10-02 | 윤종용 | 반도체 장치의 고전압발생회로 |
JP2002501654A (ja) * | 1997-05-30 | 2002-01-15 | ミクロン テクノロジー,インコーポレイテッド | 256Megダイナミックランダムアクセスメモリ |
KR100256226B1 (ko) * | 1997-06-26 | 2000-05-15 | 김영환 | 레퍼런스 전압 발생 장치 |
JP4109340B2 (ja) * | 1997-12-26 | 2008-07-02 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
KR19990050472A (ko) * | 1997-12-17 | 1999-07-05 | 구본준 | 승압전압 발생회로 |
KR100280434B1 (ko) * | 1998-01-23 | 2001-03-02 | 김영환 | 고전압발생회로 |
US5973895A (en) * | 1998-04-07 | 1999-10-26 | Vanguard International Semiconductor Corp. | Method and circuit for disabling a two-phase charge pump |
US6215708B1 (en) * | 1998-09-30 | 2001-04-10 | Integrated Device Technology, Inc. | Charge pump for improving memory cell low VCC performance without increasing gate oxide thickness |
JP3293577B2 (ja) * | 1998-12-15 | 2002-06-17 | 日本電気株式会社 | チャージポンプ回路、昇圧回路及び半導体記憶装置 |
JP4242006B2 (ja) * | 1999-06-23 | 2009-03-18 | 株式会社ルネサステクノロジ | チャージポンプ回路およびそれを用いた不揮発性半導体記憶装置 |
KR100308502B1 (ko) | 1999-06-29 | 2001-11-01 | 박종섭 | 고전압 발생장치 |
JP2001126478A (ja) * | 1999-10-29 | 2001-05-11 | Mitsubishi Electric Corp | 半導体装置 |
KR100362700B1 (ko) * | 2000-02-03 | 2002-11-27 | 삼성전자 주식회사 | 반도체 메모리 장치의 전압 레귤레이터 회로 |
JP3835968B2 (ja) | 2000-03-06 | 2006-10-18 | 松下電器産業株式会社 | 半導体集積回路 |
TW529003B (en) * | 2000-12-06 | 2003-04-21 | Sony Corp | Power voltage conversion circuit and its control method, display device and portable terminal apparatus |
JP2002191169A (ja) | 2000-12-20 | 2002-07-05 | Mitsubishi Electric Corp | 半導体集積回路 |
KR100550637B1 (ko) | 2000-12-30 | 2006-02-10 | 주식회사 하이닉스반도체 | 저전압 감지기를 내장한 고전압 검출기 |
DE10108980A1 (de) * | 2001-02-23 | 2002-09-12 | Koninkl Philips Electronics Nv | Anordnung zur Ansteuerung von Anzeigeeinheiten mit adaptiver Startsequenz |
KR100401519B1 (ko) * | 2001-09-14 | 2003-10-17 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 전압발생회로 |
KR100401521B1 (ko) | 2001-09-20 | 2003-10-17 | 주식회사 하이닉스반도체 | 고전압 동작용 승압 회로 |
US6736474B1 (en) | 2001-12-12 | 2004-05-18 | John W. Tiede | Charge pump circuit |
KR100404001B1 (ko) | 2001-12-29 | 2003-11-05 | 주식회사 하이닉스반도체 | 차지 펌프 회로 |
FR2838840B1 (fr) * | 2002-04-23 | 2005-04-01 | St Microelectronics Sa | Comparateur de tension d'alimentation |
US6566847B1 (en) * | 2002-07-29 | 2003-05-20 | Taiwan Semiconductor Manufacturing Company | Low power charge pump regulating circuit |
US6865512B2 (en) * | 2002-11-12 | 2005-03-08 | Koninklijke Philips Electronics N.V. | Automated medical imaging system maintenance diagnostics |
US7233473B2 (en) | 2002-11-18 | 2007-06-19 | Nxp B.V. | Protection circuit and method for floating power transfer device |
KR100520138B1 (ko) | 2002-11-28 | 2005-10-10 | 주식회사 하이닉스반도체 | 펌핑전압 발생장치 |
US6888763B1 (en) * | 2003-02-04 | 2005-05-03 | Advanced Micro Devices, Inc. | Compensated oscillator circuit for charge pumps |
KR100535044B1 (ko) * | 2003-02-13 | 2005-12-07 | 주식회사 하이닉스반도체 | 전압 펌프 회로 |
KR100536603B1 (ko) * | 2003-07-10 | 2005-12-14 | 삼성전자주식회사 | 선택 모드를 갖는 전하 펌프 회로 |
TWI267863B (en) * | 2004-04-12 | 2006-12-01 | Samsung Electronics Co Ltd | High voltage generating circuit preserving charge pumping efficiency |
KR100610013B1 (ko) * | 2004-08-23 | 2006-08-09 | 삼성전자주식회사 | 반도체 메모리에 채용하기 적합한 차아지 펌프회로 |
KR100674961B1 (ko) | 2005-02-26 | 2007-01-26 | 삼성전자주식회사 | 부가 펌프 회로를 구비하는 승압전압 발생회로 및 이의 승압전압 발생방법 |
KR100727440B1 (ko) * | 2005-03-31 | 2007-06-13 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
KR100732756B1 (ko) * | 2005-04-08 | 2007-06-27 | 주식회사 하이닉스반도체 | 전압 펌핑장치 |
US20070070725A1 (en) | 2005-09-29 | 2007-03-29 | Hynix Semiconductor Inc. | Internal voltage supplying device |
KR100719147B1 (ko) | 2005-09-29 | 2007-05-18 | 주식회사 하이닉스반도체 | 내부전원 공급장치 |
KR100821570B1 (ko) * | 2005-11-29 | 2008-04-14 | 주식회사 하이닉스반도체 | 고전압 발생 장치 |
KR100728904B1 (ko) * | 2005-12-28 | 2007-06-15 | 주식회사 하이닉스반도체 | 전압 발생기 및 이를 포함하는 반도체 메모리 장치 |
US8022679B2 (en) * | 2008-04-18 | 2011-09-20 | Linear Technology Corporation | Systems and methods for fast switch turn on approximating ideal diode function |
KR100902060B1 (ko) * | 2008-05-08 | 2009-06-15 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 펌핑 전압 생성 회로 및 방법 |
US8416010B2 (en) * | 2011-04-27 | 2013-04-09 | Intersil Americas Inc. | Adaptive charge pump |
JP2013070462A (ja) * | 2011-09-21 | 2013-04-18 | Elpida Memory Inc | 半導体装置及びこれを備える情報処理装置 |
US8604869B1 (en) * | 2012-06-07 | 2013-12-10 | Maxim Integrated Products, Inc. | Charge pump with a wide input supply range |
KR20140145814A (ko) * | 2013-06-14 | 2014-12-24 | 에스케이하이닉스 주식회사 | 기준전압 생성기 및 그를 포함하는 저전압용 내부전원 생성장치 |
KR102105443B1 (ko) | 2013-06-21 | 2020-04-29 | 에스케이하이닉스 주식회사 | 반도체 장치 |
JP6090214B2 (ja) | 2014-03-19 | 2017-03-08 | 株式会社デンソー | 電源回路 |
CN115424642B (zh) * | 2022-11-03 | 2023-01-31 | 成都市硅海武林科技有限公司 | 一种具有二级起泵的fpga电荷泵电路 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US43303A (en) * | 1864-06-28 | Improvement in lanterns | ||
US4670861A (en) * | 1985-06-21 | 1987-06-02 | Advanced Micro Devices, Inc. | CMOS N-well bias generator and gating system |
EP0449235B1 (en) * | 1990-03-26 | 1997-11-05 | Micron Technology, Inc. | Semiconductor memory comprising high efficiency charge pump circuit |
GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
KR920006991A (ko) * | 1990-09-25 | 1992-04-28 | 김광호 | 반도체메모리 장치의 고전압발생회로 |
IT1258242B (it) * | 1991-11-07 | 1996-02-22 | Samsung Electronics Co Ltd | Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione |
US5347172A (en) * | 1992-10-22 | 1994-09-13 | United Memories, Inc. | Oscillatorless substrate bias generator |
JP3244601B2 (ja) * | 1994-12-09 | 2002-01-07 | 富士通株式会社 | 半導体集積回路 |
JP3129131B2 (ja) * | 1995-02-01 | 2001-01-29 | 日本電気株式会社 | 昇圧回路 |
KR0172370B1 (ko) * | 1995-12-30 | 1999-03-30 | 김광호 | 다단펌핑 머지드 펌핑전압 발생회로 |
US6023187A (en) * | 1997-12-23 | 2000-02-08 | Mitsubishi Semiconductor America, Inc. | Voltage pump for integrated circuit and operating method thereof |
-
1997
- 1997-04-02 KR KR1019970012109A patent/KR100273208B1/ko not_active IP Right Cessation
- 1997-08-28 US US08/918,667 patent/US5841725A/en not_active Expired - Lifetime
- 1997-09-19 TW TW086113604A patent/TW354402B/zh not_active IP Right Cessation
-
1998
- 1998-03-19 DE DE19812096A patent/DE19812096A1/de not_active Withdrawn
- 1998-04-01 GB GB9807050A patent/GB2323952B/en not_active Expired - Fee Related
- 1998-04-02 JP JP9037898A patent/JP2964240B2/ja not_active Expired - Fee Related
- 1998-11-19 US US09/195,551 patent/US6177828B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5841725A (en) | 1998-11-24 |
JPH10337003A (ja) | 1998-12-18 |
DE19812096A1 (de) | 1998-10-08 |
KR100273208B1 (ko) | 2000-12-15 |
GB9807050D0 (en) | 1998-06-03 |
KR19980075793A (ko) | 1998-11-16 |
GB2323952B (en) | 1999-06-02 |
JP2964240B2 (ja) | 1999-10-18 |
GB2323952A (en) | 1998-10-07 |
US6177828B1 (en) | 2001-01-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |