FR2838840B1 - Comparateur de tension d'alimentation - Google Patents

Comparateur de tension d'alimentation

Info

Publication number
FR2838840B1
FR2838840B1 FR0205042A FR0205042A FR2838840B1 FR 2838840 B1 FR2838840 B1 FR 2838840B1 FR 0205042 A FR0205042 A FR 0205042A FR 0205042 A FR0205042 A FR 0205042A FR 2838840 B1 FR2838840 B1 FR 2838840B1
Authority
FR
France
Prior art keywords
power supply
supply comparator
comparator
power
supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0205042A
Other languages
English (en)
Other versions
FR2838840A1 (fr
Inventor
Filipe Ganivet
Thierry Giovinazzi
Rosa Francesco La
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0205042A priority Critical patent/FR2838840B1/fr
Priority to US10/420,342 priority patent/US6812747B2/en
Publication of FR2838840A1 publication Critical patent/FR2838840A1/fr
Application granted granted Critical
Publication of FR2838840B1 publication Critical patent/FR2838840B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26Current mirrors
    • G05F3/262Current mirrors using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30Modifications for providing a predetermined threshold before switching
    • H03K17/302Modifications for providing a predetermined threshold before switching in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0205042A 2002-04-23 2002-04-23 Comparateur de tension d'alimentation Expired - Lifetime FR2838840B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0205042A FR2838840B1 (fr) 2002-04-23 2002-04-23 Comparateur de tension d'alimentation
US10/420,342 US6812747B2 (en) 2002-04-23 2003-04-22 Supply voltage comparator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0205042A FR2838840B1 (fr) 2002-04-23 2002-04-23 Comparateur de tension d'alimentation

Publications (2)

Publication Number Publication Date
FR2838840A1 FR2838840A1 (fr) 2003-10-24
FR2838840B1 true FR2838840B1 (fr) 2005-04-01

Family

ID=28686273

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0205042A Expired - Lifetime FR2838840B1 (fr) 2002-04-23 2002-04-23 Comparateur de tension d'alimentation

Country Status (2)

Country Link
US (1) US6812747B2 (fr)
FR (1) FR2838840B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004033980A1 (de) * 2004-07-14 2006-02-16 Infineon Technologies Ag Verfahren sowie Schaltungsanordnung zur Ansteuerung einer Last mit einem elektrischen Strom
EP1659690B1 (fr) * 2004-11-22 2013-11-06 Semiconductor Components Industries, LLC Comparateur pour tensions d'entrée plus élevées que la tension d'alimentation
EP1667009B1 (fr) 2004-12-06 2007-11-14 STMicroelectronics Pvt. Ltd Identifiant de tension d'alimentation
JP5259505B2 (ja) 2009-06-26 2013-08-07 株式会社東芝 半導体記憶装置
IT1397283B1 (it) * 2009-11-30 2013-01-04 St Microelectronics Rousset Stadio a pompa di carica, metodo di controllo di uno stadio a pompa di carica e memoria comprendente uno stadio a pompa di carica.
CN103123513B (zh) * 2011-11-18 2014-11-05 博通集成电路(上海)有限公司 电压调整器和电子装置
KR20170076093A (ko) * 2015-12-24 2017-07-04 에스케이하이닉스 주식회사 반도체 장치
DE102017102499B4 (de) * 2017-02-08 2021-06-17 Infineon Technologies Ag Elektrische Bauelemente, integrierte Schaltungen und Verfahren zum Überwachen von Spannungen
EP4174859B1 (fr) * 2021-10-26 2024-08-21 STMicroelectronics S.r.l. Circuit de régulateur de tension et dispositif de mémoire correspondant

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3247402B2 (ja) * 1991-07-25 2002-01-15 株式会社東芝 半導体装置及び不揮発性半導体記憶装置
US5420499A (en) * 1994-03-02 1995-05-30 Deshazo; Thomas R. Current rise and fall time limited voltage follower
US5589794A (en) * 1994-12-20 1996-12-31 Sgs-Thomson Microelectronics, Inc. Dynamically controlled voltage reference circuit
JPH0973331A (ja) * 1995-06-30 1997-03-18 Seiko Instr Inc 半導体集積回路装置
KR100273208B1 (ko) * 1997-04-02 2000-12-15 김영환 반도체메모리장치의고효율전하펌프회로
JP3087838B2 (ja) * 1997-08-05 2000-09-11 日本電気株式会社 定電圧発生回路
EP0905710B1 (fr) * 1997-09-30 2003-07-23 STMicroelectronics S.r.l. Régulateur de tension avec compensation de chute de tension pour circuit de programmation de cellules de mémoire non volatiles électriquement programmables
US6163175A (en) * 1998-03-27 2000-12-19 Vantis Corporation High voltage detector to control a power supply voltage pump for a 2.5 volt semiconductor process device
US6133764A (en) * 1999-01-27 2000-10-17 Motorola, Inc. Comparator circuit and method
IT1314090B1 (it) * 1999-11-26 2002-12-04 St Microelectronics Srl Generatore ad impulsi indipendente dalla tensione di alimentazione.
US6515538B2 (en) * 2000-04-19 2003-02-04 Nec Compound Semiconductor Devices, Ltd. Active bias circuit having wilson and widlar configurations

Also Published As

Publication number Publication date
US20040032243A1 (en) 2004-02-19
US6812747B2 (en) 2004-11-02
FR2838840A1 (fr) 2003-10-24

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