TW347594B - MOSFET and fabrication thereof - Google Patents
MOSFET and fabrication thereofInfo
- Publication number
- TW347594B TW347594B TW086117064A TW86117064A TW347594B TW 347594 B TW347594 B TW 347594B TW 086117064 A TW086117064 A TW 086117064A TW 86117064 A TW86117064 A TW 86117064A TW 347594 B TW347594 B TW 347594B
- Authority
- TW
- Taiwan
- Prior art keywords
- channel region
- drain
- mosfet
- vicinity
- threshold voltage
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28105—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/66583—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9016919A JPH10214964A (ja) | 1997-01-30 | 1997-01-30 | Mosfet及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW347594B true TW347594B (en) | 1998-12-11 |
Family
ID=11929545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086117064A TW347594B (en) | 1997-01-30 | 1997-11-15 | MOSFET and fabrication thereof |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0856892A3 (zh) |
JP (1) | JPH10214964A (zh) |
KR (1) | KR19980070155A (zh) |
CN (1) | CN1192053A (zh) |
TW (1) | TW347594B (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW495980B (en) * | 1999-06-11 | 2002-07-21 | Koninkl Philips Electronics Nv | A method of manufacturing a semiconductor device |
FR2795868B1 (fr) * | 1999-07-02 | 2003-05-16 | St Microelectronics Sa | Transistor mosfet a effet canal court compense par le materiau de grille |
CN100416829C (zh) * | 2001-02-05 | 2008-09-03 | 杨金玉 | 金属-绝缘-金属场效应管 |
JP2004253541A (ja) * | 2003-02-19 | 2004-09-09 | Ricoh Co Ltd | 半導体装置 |
US7054216B2 (en) * | 2004-03-17 | 2006-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Programmable MOS device formed by hot carrier effect |
US7285829B2 (en) | 2004-03-31 | 2007-10-23 | Intel Corporation | Semiconductor device having a laterally modulated gate workfunction and method of fabrication |
DE102005028837B4 (de) * | 2005-06-25 | 2009-07-30 | Atmel Germany Gmbh | Feldeffekttransistor und Verfahren zur Herstellung eines Feldeffekttransistors |
US7838371B2 (en) * | 2006-11-06 | 2010-11-23 | Nxp B.V. | Method of manufacturing a FET gate |
US7781288B2 (en) * | 2007-02-21 | 2010-08-24 | International Business Machines Corporation | Semiconductor structure including gate electrode having laterally variable work function |
WO2009037896A1 (ja) * | 2007-09-18 | 2009-03-26 | Sharp Kabushiki Kaisha | 半導体装置の製造方法及び半導体装置 |
JP2009123944A (ja) * | 2007-11-15 | 2009-06-04 | Panasonic Corp | 半導体装置及びその製造方法 |
CN101452956B (zh) * | 2007-12-06 | 2011-06-01 | 上海华虹Nec电子有限公司 | 高压pmos器件及制造方法 |
KR100981114B1 (ko) * | 2008-08-04 | 2010-09-08 | 충북대학교 산학협력단 | 이중 일함수 게이트를 갖는 모스 트랜지스터의 제조방법 |
KR101027769B1 (ko) * | 2008-08-08 | 2011-04-07 | 충북대학교 산학협력단 | 이중 일함수 게이트를 갖는 cmos 트랜지스터 및 그 제조방법 |
US20100127331A1 (en) * | 2008-11-26 | 2010-05-27 | Albert Ratnakumar | Asymmetric metal-oxide-semiconductor transistors |
US8735983B2 (en) | 2008-11-26 | 2014-05-27 | Altera Corporation | Integrated circuit transistors with multipart gate conductors |
US8638594B1 (en) | 2009-12-02 | 2014-01-28 | Altera Corporation | Integrated circuits with asymmetric transistors |
US20110147837A1 (en) | 2009-12-23 | 2011-06-23 | Hafez Walid M | Dual work function gate structures |
CN102117831B (zh) * | 2009-12-31 | 2013-03-13 | 中国科学院微电子研究所 | 晶体管及其制造方法 |
US8138797B1 (en) | 2010-05-28 | 2012-03-20 | Altera Corporation | Integrated circuits with asymmetric pass transistors |
US8860140B2 (en) | 2011-03-01 | 2014-10-14 | Tsinghua University | Tunneling field effect transistor and method for forming the same |
CN102169901B (zh) * | 2011-03-01 | 2012-10-10 | 清华大学 | 具有异质栅极功函数的隧穿场效应晶体管及其形成方法 |
CN102184961B (zh) * | 2011-04-26 | 2017-04-12 | 复旦大学 | 一种非对称栅mos器件及其制备方法 |
CN103794501B (zh) * | 2012-10-30 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其形成方法 |
US8975928B1 (en) | 2013-04-26 | 2015-03-10 | Altera Corporation | Input-output buffer circuitry with increased drive strength |
JP6121350B2 (ja) | 2014-03-11 | 2017-04-26 | マイクロソフト テクノロジー ライセンシング,エルエルシー | 半導体装置及びその製造方法 |
CN106663694B (zh) * | 2014-08-19 | 2021-05-25 | 英特尔公司 | 具有横向渐变功函数的晶体管栅极金属 |
CN105390550B (zh) * | 2015-12-04 | 2018-02-06 | 上海斐讯数据通信技术有限公司 | 复合多晶硅栅mos器件及其制造方法 |
CN111640673A (zh) * | 2020-04-29 | 2020-09-08 | 中国科学院微电子研究所 | 一种双栅薄膜晶体管及其制作方法 |
US20220190135A1 (en) * | 2020-12-10 | 2022-06-16 | Roza Kotlyar | Lateral gate material arrangements for quantum dot devices |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1569897A (en) * | 1975-12-31 | 1980-06-25 | Ibm | Field effect transistor |
JPS6153773A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS6190465A (ja) * | 1984-10-11 | 1986-05-08 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS6273668A (ja) * | 1985-09-27 | 1987-04-04 | Hitachi Ltd | 半導体装置 |
JPS62112375A (ja) * | 1985-11-12 | 1987-05-23 | Toshiba Corp | 半導体装置の製造方法 |
JPS63160276A (ja) * | 1986-12-24 | 1988-07-04 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPS63187664A (ja) * | 1987-01-30 | 1988-08-03 | Hitachi Ltd | 半導体装置 |
JPS6454762A (en) * | 1987-08-26 | 1989-03-02 | Toshiba Corp | Insulated gate field effect transistor |
JPH01175258A (ja) * | 1987-12-29 | 1989-07-11 | Fujitsu Ltd | Mosfet |
JPH01232765A (ja) * | 1988-03-12 | 1989-09-18 | Fujitsu Ltd | 絶縁ゲート電界効果トランジスタ |
JPH0234936A (ja) * | 1988-07-25 | 1990-02-05 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH0279474A (ja) * | 1988-09-14 | 1990-03-20 | Nec Corp | Mosトランジスタ |
JPH02137372A (ja) * | 1988-11-18 | 1990-05-25 | Nec Corp | Mos電界効果型トランジスタ |
JPH02174167A (ja) * | 1988-12-26 | 1990-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Mis電界型トランジスタ |
JP2995838B2 (ja) * | 1990-01-11 | 1999-12-27 | セイコーエプソン株式会社 | Mis型半導体装置及びその製造方法 |
ATE122176T1 (de) * | 1990-05-31 | 1995-05-15 | Canon Kk | Verfahren zur herstellung einer halbleiteranordnung mit gatestruktur. |
JPH0442938A (ja) * | 1990-06-07 | 1992-02-13 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JPH0472739A (ja) * | 1990-07-13 | 1992-03-06 | Fujitsu Ltd | 半導体装置の製造方法 |
US5227320A (en) * | 1991-09-10 | 1993-07-13 | Vlsi Technology, Inc. | Method for producing gate overlapped lightly doped drain (goldd) structure for submicron transistor |
JPH05226361A (ja) * | 1992-02-12 | 1993-09-03 | Oki Electric Ind Co Ltd | 電界効果トランジスタ |
JPH06151828A (ja) * | 1992-10-30 | 1994-05-31 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH06196643A (ja) * | 1992-12-22 | 1994-07-15 | Victor Co Of Japan Ltd | 半導体装置 |
JPH0778979A (ja) * | 1993-06-17 | 1995-03-20 | Nec Corp | 半導体装置の製造方法 |
-
1997
- 1997-01-30 JP JP9016919A patent/JPH10214964A/ja not_active Withdrawn
- 1997-11-15 TW TW086117064A patent/TW347594B/zh not_active IP Right Cessation
- 1997-11-27 EP EP97309580A patent/EP0856892A3/en not_active Withdrawn
- 1997-12-12 KR KR1019970068289A patent/KR19980070155A/ko not_active Application Discontinuation
-
1998
- 1998-01-26 CN CN98103675A patent/CN1192053A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR19980070155A (ko) | 1998-10-26 |
EP0856892A2 (en) | 1998-08-05 |
CN1192053A (zh) | 1998-09-02 |
EP0856892A3 (en) | 1999-07-14 |
JPH10214964A (ja) | 1998-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |