FR2795868B1 - Transistor mosfet a effet canal court compense par le materiau de grille - Google Patents

Transistor mosfet a effet canal court compense par le materiau de grille

Info

Publication number
FR2795868B1
FR2795868B1 FR9908811A FR9908811A FR2795868B1 FR 2795868 B1 FR2795868 B1 FR 2795868B1 FR 9908811 A FR9908811 A FR 9908811A FR 9908811 A FR9908811 A FR 9908811A FR 2795868 B1 FR2795868 B1 FR 2795868B1
Authority
FR
France
Prior art keywords
short channel
mosfet transistor
grid material
channel compensated
compensated mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9908811A
Other languages
English (en)
Other versions
FR2795868A1 (fr
Inventor
Jerome Alieu
Caroline Hernandez
Michel Haond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9908811A priority Critical patent/FR2795868B1/fr
Priority to US09/606,600 priority patent/US6528399B1/en
Publication of FR2795868A1 publication Critical patent/FR2795868A1/fr
Application granted granted Critical
Publication of FR2795868B1 publication Critical patent/FR2795868B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28105—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR9908811A 1999-07-02 1999-07-02 Transistor mosfet a effet canal court compense par le materiau de grille Expired - Fee Related FR2795868B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9908811A FR2795868B1 (fr) 1999-07-02 1999-07-02 Transistor mosfet a effet canal court compense par le materiau de grille
US09/606,600 US6528399B1 (en) 1999-07-02 2000-06-29 MOSFET transistor with short channel effect compensated by the gate material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9908811A FR2795868B1 (fr) 1999-07-02 1999-07-02 Transistor mosfet a effet canal court compense par le materiau de grille

Publications (2)

Publication Number Publication Date
FR2795868A1 FR2795868A1 (fr) 2001-01-05
FR2795868B1 true FR2795868B1 (fr) 2003-05-16

Family

ID=9547839

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9908811A Expired - Fee Related FR2795868B1 (fr) 1999-07-02 1999-07-02 Transistor mosfet a effet canal court compense par le materiau de grille

Country Status (2)

Country Link
US (1) US6528399B1 (fr)
FR (1) FR2795868B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358233A (ja) * 2000-06-15 2001-12-26 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
US6762468B2 (en) * 2001-12-26 2004-07-13 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP3873012B2 (ja) * 2002-07-29 2007-01-24 株式会社東芝 半導体装置の製造方法
US6627515B1 (en) 2002-12-13 2003-09-30 Taiwan Semiconductor Manufacturing Company Method of fabricating a non-floating body device with enhanced performance
US7118979B2 (en) * 2003-11-05 2006-10-10 Texas Instruments Incorporated Method of manufacturing transistor having germanium implant region on the sidewalls of the polysilicon gate electrode
KR100724563B1 (ko) * 2005-04-29 2007-06-04 삼성전자주식회사 다중 일함수 금속 질화물 게이트 전극을 갖는 모스트랜지스터들, 이를 채택하는 씨모스 집적회로 소자들 및그 제조방법들
US7413939B2 (en) * 2005-06-10 2008-08-19 Sharp Laboratories Of America, Inc. Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit
KR100745030B1 (ko) * 2006-01-27 2007-08-01 충북대학교 산학협력단 플래시 메모리 소자, 이의 제조 방법 및 이의 구동 방법
US7943988B2 (en) * 2008-09-05 2011-05-17 Freescale Semiconductor, Inc. Power MOSFET with a gate structure of different material
DE102009039419B4 (de) * 2009-08-31 2012-03-29 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Verfahren zum Bearbeiten eines Gateelektrodenmaterialsystems unter Bewahrung der Integrität eines Gatestapels mit großem ε durch Passivierung mittels eines Sauerstoffplasmas und Transistorbauelement
US9761667B2 (en) * 2015-07-30 2017-09-12 International Business Machines Corporation Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162246A (en) * 1990-04-27 1992-11-10 North Carolina State University Selective germanium deposition on silicon and resulting structures
JPH0472739A (ja) * 1990-07-13 1992-03-06 Fujitsu Ltd 半導体装置の製造方法
US5242847A (en) * 1992-07-27 1993-09-07 North Carolina State University At Raleigh Selective deposition of doped silion-germanium alloy on semiconductor substrate
US5571744A (en) * 1993-08-27 1996-11-05 National Semiconductor Corporation Defect free CMOS process
US5453389A (en) * 1993-08-27 1995-09-26 National Semiconductor, Inc. Defect-free bipolar process
JP3518059B2 (ja) * 1995-06-12 2004-04-12 ソニー株式会社 Ｍｉｓ型トランジスタの製造方法
JPH10214964A (ja) * 1997-01-30 1998-08-11 Oki Electric Ind Co Ltd Ｍｏｓｆｅｔ及びその製造方法
FR2765395B1 (fr) * 1997-06-30 1999-09-03 Sgs Thomson Microelectronics Procede de realisation de grille de transistors mos a forte teneur en germanium
US5888867A (en) * 1998-02-13 1999-03-30 Advanced Micro Devices, Inc. Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration
US6281559B1 (en) * 1999-03-03 2001-08-28 Advanced Micro Devices, Inc. Gate stack structure for variable threshold voltage
US6312995B1 (en) * 1999-03-08 2001-11-06 Advanced Micro Devices, Inc. MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
US6333245B1 (en) * 1999-12-21 2001-12-25 International Business Machines Corporation Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer

Also Published As

Publication number Publication date
FR2795868A1 (fr) 2001-01-05
US6528399B1 (en) 2003-03-04

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090331