DE60025134D1 - Elektronenemissionsvorrichtung - Google Patents

Elektronenemissionsvorrichtung

Info

Publication number
DE60025134D1
DE60025134D1 DE60025134T DE60025134T DE60025134D1 DE 60025134 D1 DE60025134 D1 DE 60025134D1 DE 60025134 T DE60025134 T DE 60025134T DE 60025134 T DE60025134 T DE 60025134T DE 60025134 D1 DE60025134 D1 DE 60025134D1
Authority
DE
Germany
Prior art keywords
electron emission
emission device
electron
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60025134T
Other languages
English (en)
Other versions
DE60025134T2 (de
Inventor
Takamasa Yoshikawa
Takashi Chuman
Nobuyasu Negishi
Shingo Iwasaki
Takashi Yamada
Kazuto Sakemura
Takuya Hata
Atsushi Yoshizawa
Hideo Satoh
Kiyohide Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Publication of DE60025134D1 publication Critical patent/DE60025134D1/de
Application granted granted Critical
Publication of DE60025134T2 publication Critical patent/DE60025134T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
DE2000625134 1999-10-27 2000-10-26 Elektronenemissionsvorrichtung Expired - Fee Related DE60025134T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30507199A JP3789064B2 (ja) 1999-10-27 1999-10-27 電子放出素子
JP30507199 1999-10-27

Publications (2)

Publication Number Publication Date
DE60025134D1 true DE60025134D1 (de) 2006-02-02
DE60025134T2 DE60025134T2 (de) 2006-07-20

Family

ID=17940774

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2000625134 Expired - Fee Related DE60025134T2 (de) 1999-10-27 2000-10-26 Elektronenemissionsvorrichtung

Country Status (3)

Country Link
EP (1) EP1096532B1 (de)
JP (1) JP3789064B2 (de)
DE (1) DE60025134T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6771010B2 (en) * 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
CN1216394C (zh) 2001-09-25 2005-08-24 松下电工株式会社 场致发射型电子源
DE60229105D1 (de) * 2001-12-13 2008-11-13 Matsushita Electric Works Ltd Feldemissionselektronenquelle
TW588389B (en) * 2002-03-08 2004-05-21 Matsushita Electric Works Ltd Quantum device
EP1523025B1 (de) 2002-03-25 2012-12-19 Panasonic Corporation Feldemissionselektronenquelle
WO2006126383A1 (ja) * 2005-05-24 2006-11-30 Konica Minolta Holdings, Inc. 電界放出型電子源及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430300A (en) * 1991-07-18 1995-07-04 The Texas A&M University System Oxidized porous silicon field emission devices
US5990605A (en) * 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
TW391022B (en) * 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
JPH11265653A (ja) * 1998-03-18 1999-09-28 Ulvac Corp 電極、及びその電極を有する表示装置

Also Published As

Publication number Publication date
EP1096532A1 (de) 2001-05-02
JP2001126610A (ja) 2001-05-11
EP1096532B1 (de) 2005-12-28
DE60025134T2 (de) 2006-07-20
JP3789064B2 (ja) 2006-06-21

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee