DE60113245D1 - Elektronenemissionsvorrichtung - Google Patents

Elektronenemissionsvorrichtung

Info

Publication number
DE60113245D1
DE60113245D1 DE60113245T DE60113245T DE60113245D1 DE 60113245 D1 DE60113245 D1 DE 60113245D1 DE 60113245 T DE60113245 T DE 60113245T DE 60113245 T DE60113245 T DE 60113245T DE 60113245 D1 DE60113245 D1 DE 60113245D1
Authority
DE
Germany
Prior art keywords
electron emission
emission device
electron
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60113245T
Other languages
English (en)
Other versions
DE60113245T2 (de
Inventor
Pavel Adamec
Dieter Winkler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
Original Assignee
ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH filed Critical ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
Publication of DE60113245D1 publication Critical patent/DE60113245D1/de
Application granted granted Critical
Publication of DE60113245T2 publication Critical patent/DE60113245T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
DE60113245T 2001-07-06 2001-07-06 Elektronenemissionsapparat Expired - Fee Related DE60113245T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01116403A EP1274111B1 (de) 2001-07-06 2001-07-06 Elektronenemissionsvorrichtung

Publications (2)

Publication Number Publication Date
DE60113245D1 true DE60113245D1 (de) 2005-10-13
DE60113245T2 DE60113245T2 (de) 2006-06-29

Family

ID=8177957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60113245T Expired - Fee Related DE60113245T2 (de) 2001-07-06 2001-07-06 Elektronenemissionsapparat

Country Status (4)

Country Link
US (1) US7268361B2 (de)
EP (1) EP1274111B1 (de)
DE (1) DE60113245T2 (de)
WO (1) WO2003005398A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1522211B8 (de) * 2002-09-04 2007-02-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Steuerschaltung zum steuern einer elektronenemissionsvorrichtung
US7002820B2 (en) * 2004-06-17 2006-02-21 Hewlett-Packard Development Company, L.P. Semiconductor storage device
FR2879343A1 (fr) * 2004-12-15 2006-06-16 Thales Sa Dispositif a effet de champ comprenant un dispositif saturateur de courant
US7863805B2 (en) * 2005-06-17 2011-01-04 Sumitomo Electric Industries, Ltd. Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
EP2019413B1 (de) * 2007-07-27 2010-03-31 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Elektrostatische Linsenanordnung
FR2934716B1 (fr) * 2008-07-31 2010-09-10 Commissariat Energie Atomique Diode electroluminescente en materiau semiconducteur et son procede de fabrication
KR20140128975A (ko) * 2011-12-29 2014-11-06 엘화 엘엘씨 그래핀 그리드를 갖는 전자적 디바이스
US8810161B2 (en) 2011-12-29 2014-08-19 Elwha Llc Addressable array of field emission devices
US8692226B2 (en) 2011-12-29 2014-04-08 Elwha Llc Materials and configurations of a field emission device
US9171690B2 (en) 2011-12-29 2015-10-27 Elwha Llc Variable field emission device
US8946992B2 (en) 2011-12-29 2015-02-03 Elwha Llc Anode with suppressor grid
US8928228B2 (en) 2011-12-29 2015-01-06 Elwha Llc Embodiments of a field emission device
US8810131B2 (en) 2011-12-29 2014-08-19 Elwha Llc Field emission device with AC output
US9349562B2 (en) 2011-12-29 2016-05-24 Elwha Llc Field emission device with AC output
US8970113B2 (en) 2011-12-29 2015-03-03 Elwha Llc Time-varying field emission device
US9018861B2 (en) 2011-12-29 2015-04-28 Elwha Llc Performance optimization of a field emission device
US9646798B2 (en) 2011-12-29 2017-05-09 Elwha Llc Electronic device graphene grid
US8575842B2 (en) 2011-12-29 2013-11-05 Elwha Llc Field emission device
US8779376B2 (en) * 2012-01-09 2014-07-15 Fei Company Determination of emission parameters from field emission sources
DE102013010187A1 (de) * 2012-06-27 2014-01-02 Fairchild Semiconductor Corp. Schottky-Barriere-Vorrichtung mit lokal planarisierter Oberfläche und zugehöriges Halbleitererzeugnis
US9659735B2 (en) 2012-09-12 2017-05-23 Elwha Llc Applications of graphene grids in vacuum electronics
US9659734B2 (en) 2012-09-12 2017-05-23 Elwha Llc Electronic device multi-layer graphene grid
US9748071B2 (en) * 2013-02-05 2017-08-29 Massachusetts Institute Of Technology Individually switched field emission arrays
EP2779201A1 (de) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Elektronenpistole mit starker Helligkeit, System damit und Betriebsverfahren dafür
US9472628B2 (en) * 2014-07-14 2016-10-18 International Business Machines Corporation Heterogeneous source drain region and extension region
US20160247657A1 (en) * 2015-02-25 2016-08-25 Ho Seob Kim Micro-electron column having nano structure tip with easily aligning
US10832885B2 (en) 2015-12-23 2020-11-10 Massachusetts Institute Of Technology Electron transparent membrane for cold cathode devices
US11316484B2 (en) * 2017-05-25 2022-04-26 Boise State University Optically gated transistor selector for variable resistive memory device
US10700226B2 (en) * 2017-05-25 2020-06-30 Boise State University Optically activated transistor, switch, and photodiode

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US4513308A (en) * 1982-09-23 1985-04-23 The United States Of America As Represented By The Secretary Of The Navy p-n Junction controlled field emitter array cathode
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
US5412285A (en) * 1990-12-06 1995-05-02 Seiko Epson Corporation Linear amplifier incorporating a field emission device having specific gap distances between gate and cathode
JP2613669B2 (ja) 1990-09-27 1997-05-28 工業技術院長 電界放出素子及びその製造方法
JP2719239B2 (ja) 1991-02-08 1998-02-25 工業技術院長 電界放出素子
JP2669749B2 (ja) 1992-03-27 1997-10-29 工業技術院長 電界放出素子
US5359256A (en) 1992-07-30 1994-10-25 The United States Of America As Represented By The Secretary Of The Navy Regulatable field emitter device and method of production thereof
JP3142388B2 (ja) * 1992-09-16 2001-03-07 富士通株式会社 陰極装置
JP2782587B2 (ja) * 1995-08-25 1998-08-06 工業技術院長 冷電子放出素子
JP3135823B2 (ja) 1995-08-25 2001-02-19 株式会社神戸製鋼所 冷電子放出素子及びその製造方法
US5847408A (en) 1996-03-25 1998-12-08 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Field emission device
US5977791A (en) * 1996-04-15 1999-11-02 Altera Corporation Embedded memory block with FIFO mode for programmable logic device
GB9616265D0 (en) 1996-08-02 1996-09-11 Philips Electronics Uk Ltd Electron devices
JP3026484B2 (ja) 1996-08-23 2000-03-27 日本電気株式会社 電界放出型冷陰極
JP2907150B2 (ja) 1996-09-27 1999-06-21 日本電気株式会社 冷陰極電子銃およびこれを用いた電子ビーム装置
US5828163A (en) 1997-01-13 1998-10-27 Fed Corporation Field emitter device with a current limiter structure
JPH10255645A (ja) 1997-03-11 1998-09-25 Agency Of Ind Science & Technol 冷電子放出素子
JP3764906B2 (ja) 1997-03-11 2006-04-12 独立行政法人産業技術総合研究所 電界放射型カソード
JP3166655B2 (ja) 1997-03-27 2001-05-14 日本電気株式会社 電界放出型冷陰極素子
JP3101713B2 (ja) * 1999-02-22 2000-10-23 東北大学長 電界放射陰極およびそれを用いる電磁波発生装置

Also Published As

Publication number Publication date
US20040238809A1 (en) 2004-12-02
DE60113245T2 (de) 2006-06-29
EP1274111A1 (de) 2003-01-08
US7268361B2 (en) 2007-09-11
EP1274111B1 (de) 2005-09-07
WO2003005398A1 (en) 2003-01-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee