TW329500B - Electro-optical device - Google Patents

Electro-optical device

Info

Publication number
TW329500B
TW329500B TW085113767A TW85113767A TW329500B TW 329500 B TW329500 B TW 329500B TW 085113767 A TW085113767 A TW 085113767A TW 85113767 A TW85113767 A TW 85113767A TW 329500 B TW329500 B TW 329500B
Authority
TW
Taiwan
Prior art keywords
thin film
electrodes
optical device
common line
lines
Prior art date
Application number
TW085113767A
Other languages
English (en)
Inventor
Yoshiharu Hiragata
Shunpei Yamazaki
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW329500B publication Critical patent/TW329500B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW085113767A 1995-11-14 1996-11-11 Electro-optical device TW329500B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32107595 1995-11-14
JP35016995 1995-12-23

Publications (1)

Publication Number Publication Date
TW329500B true TW329500B (en) 1998-04-11

Family

ID=26570351

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113767A TW329500B (en) 1995-11-14 1996-11-11 Electro-optical device

Country Status (3)

Country Link
US (3) US5977562A (zh)
KR (1) KR100297662B1 (zh)
TW (1) TW329500B (zh)

Families Citing this family (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW454101B (en) * 1995-10-04 2001-09-11 Hitachi Ltd In-plane field type liquid crystal display device comprising liquid crystal molecules with more than two different kinds of reorientation directions and its manufacturing method
TW329500B (en) 1995-11-14 1998-04-11 Handotai Energy Kenkyusho Kk Electro-optical device
JPH09146108A (ja) * 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
US5940732A (en) 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
JP3963974B2 (ja) 1995-12-20 2007-08-22 株式会社半導体エネルギー研究所 液晶電気光学装置
US6449024B1 (en) * 1996-01-26 2002-09-10 Semiconductor Energy Laboratory Co., Inc. Liquid crystal electro-optical device utilizing a polymer with an anisotropic refractive index
US6911962B1 (en) 1996-03-26 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Driving method of active matrix display device
KR100225910B1 (ko) * 1996-04-04 1999-10-15 구자홍 액정표시장치(liquid crystal display device)
US20020044249A1 (en) * 1996-04-16 2002-04-18 Naoto Hirota Liquid crystal display device
JP3194127B2 (ja) * 1996-04-16 2001-07-30 大林精工株式会社 液晶表示装置
JP3663741B2 (ja) * 1996-05-22 2005-06-22 セイコーエプソン株式会社 アクティブマトリックス型液晶表示装置及びその製造方法
KR100209531B1 (ko) 1996-06-22 1999-07-15 구자홍 액정표시장치
US6812985B1 (en) 1996-09-23 2004-11-02 Lg.Philips Lcd Co., Ltd. Liquid crystal display device
JP3120751B2 (ja) * 1996-11-06 2000-12-25 日本電気株式会社 横電界方式の液晶表示装置
JP3788649B2 (ja) * 1996-11-22 2006-06-21 株式会社半導体エネルギー研究所 液晶表示装置
US6532053B2 (en) * 1996-12-18 2003-03-11 Hitachi, Ltd. Transverse electric field system liquid crystal display device suitable for improving aperture ratio
JPH10206857A (ja) * 1997-01-21 1998-08-07 Hitachi Ltd 液晶表示装置
US6462722B1 (en) * 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
TW578130B (en) * 1997-02-17 2004-03-01 Seiko Epson Corp Display unit
US6291837B1 (en) * 1997-03-18 2001-09-18 Semiconductor Energy Laboratory Co., Ltd. Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof
JP3674953B2 (ja) * 1997-04-11 2005-07-27 株式会社日立製作所 液晶表示装置
JP3856901B2 (ja) * 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
US6972818B1 (en) 1997-05-19 2005-12-06 Lg.Philips Lcd Co., Ltd. In-plane switching mode liquid crystal display device
KR100257370B1 (ko) 1997-05-19 2000-05-15 구본준 횡전계방식액정표시장치
KR100257369B1 (ko) 1997-05-19 2000-05-15 구본준 횡전계방식액정표시장치
JP3520396B2 (ja) * 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
JP3541625B2 (ja) * 1997-07-02 2004-07-14 セイコーエプソン株式会社 表示装置及びアクティブマトリクス基板
US6184961B1 (en) * 1997-07-07 2001-02-06 Lg Electronics Inc. In-plane switching mode liquid crystal display device having opposite alignment directions for two adjacent domains
KR100251512B1 (ko) 1997-07-12 2000-04-15 구본준 횡전계방식 액정표시장치
US6697140B2 (en) 1997-07-29 2004-02-24 Lg. Philips Lcd Co., Ltd. In-plane switching mode liquid crystal display device wherein portions of second gate line overlaps with data electrode
KR100268104B1 (ko) * 1997-08-13 2000-10-16 윤종용 공통 전극 라인을 갖는 평면 구동 방식 액정 표시 장치 및그 제조 방법
KR100255931B1 (ko) 1997-08-14 2000-05-01 구본준, 론 위라하디락사 횡전계방식 액정표시소자
US6717179B1 (en) 1997-08-19 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
US6667494B1 (en) * 1997-08-19 2003-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
JP3580092B2 (ja) * 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
KR100627091B1 (ko) * 1997-08-21 2006-09-22 세이코 엡슨 가부시키가이샤 액티브 매트릭스형 표시장치
JPH11143379A (ja) 1997-09-03 1999-05-28 Semiconductor Energy Lab Co Ltd 半導体表示装置補正システムおよび半導体表示装置の補正方法
US6549258B1 (en) 1997-09-04 2003-04-15 Lg. Philips Lcd Co., Ltd. Hybrid switching mode liquid crystal display device
KR100293434B1 (ko) 1997-09-08 2001-08-07 구본준, 론 위라하디락사 횡전계방식액정표시소자
JP4130490B2 (ja) 1997-10-16 2008-08-06 三菱電機株式会社 液晶表示装置
KR100279257B1 (ko) * 1997-12-03 2001-01-15 김영환 액정표시장치
KR19990048947A (ko) * 1997-12-11 1999-07-05 김영환 색변화를 제거하며 광시야각을 실현하는 전극을 가진 액정표시 소자
KR100293436B1 (ko) 1998-01-23 2001-08-07 구본준, 론 위라하디락사 횡전계방식액정표시장치
US7663607B2 (en) 2004-05-06 2010-02-16 Apple Inc. Multipoint touchscreen
KR100306799B1 (ko) * 1998-05-29 2001-11-30 박종섭 액정표시장치
KR100293811B1 (ko) * 1998-05-29 2001-10-26 박종섭 아이피에스모드의액정표시장치
KR100344844B1 (ko) 1998-07-07 2002-11-18 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법
KR100320416B1 (ko) * 1998-08-26 2002-09-17 엘지.필립스 엘시디 주식회사 횡전계방식액정표시소자
US6642984B1 (en) * 1998-12-08 2003-11-04 Fujitsu Display Technologies Corporation Liquid crystal display apparatus having wide transparent electrode and stripe electrodes
US6630977B1 (en) * 1999-05-20 2003-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor formed around contact hole
WO2000077569A1 (fr) * 1999-06-11 2000-12-21 Matsushita Electric Industrial Co., Ltd. Affichage a cristaux liquides et son procede de production
US6449026B1 (en) * 1999-06-25 2002-09-10 Hyundai Display Technology Inc. Fringe field switching liquid crystal display and method for manufacturing the same
US6868154B1 (en) * 1999-08-02 2005-03-15 Robert O. Stuart System and method for providing a service to a customer via a communication link
KR100433596B1 (ko) * 1999-10-21 2004-05-31 마쯔시다덴기산교 가부시키가이샤 액정표시장치
KR100595294B1 (ko) 1999-12-14 2006-07-03 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치용 칼라필터 기판의 제조방법
JP2001175198A (ja) * 1999-12-14 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100504531B1 (ko) * 1999-12-15 2005-08-03 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치
US7071041B2 (en) * 2000-01-20 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6646692B2 (en) * 2000-01-26 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Liquid-crystal display device and method of fabricating the same
US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW521303B (en) 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) * 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US6789910B2 (en) 2000-04-12 2004-09-14 Semiconductor Energy Laboratory, Co., Ltd. Illumination apparatus
US6642914B1 (en) * 2000-04-13 2003-11-04 Hewlett-Packard Development Company, L.P. Liquid crystal display (LCD) having improved isocontrast performance and method for producing same
US6636289B2 (en) * 2000-04-19 2003-10-21 Lg.Philips Lcd Co., Ltd. In-plane switching LCD panel with multiple domains and rubbing directions symetric about a line
JP4785229B2 (ja) * 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7019457B2 (en) * 2000-08-03 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having both electrodes formed on the insulating layer
US6828950B2 (en) * 2000-08-10 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of driving the same
US6509616B2 (en) 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP4718677B2 (ja) 2000-12-06 2011-07-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
KR100587217B1 (ko) * 2000-12-29 2006-06-08 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정표시장치용 어레이기판 및 그제조방법
TWI281582B (en) * 2001-01-20 2007-05-21 Ind Tech Res Inst Silicon wafer liquid crystal display and its fabrication method
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2003017264A (ja) 2001-04-27 2003-01-17 Canon Inc 電界発光素子及び画像表示装置
EP1415192A1 (en) * 2001-08-01 2004-05-06 Koninklijke Philips Electronics N.V. Display device
KR100835975B1 (ko) * 2001-12-28 2008-06-09 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
US7408196B2 (en) * 2002-12-25 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR100925458B1 (ko) * 2003-01-17 2009-11-06 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR100961695B1 (ko) * 2003-06-12 2010-06-10 엘지디스플레이 주식회사 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법
JP4293867B2 (ja) * 2003-09-05 2009-07-08 奇美電子股▲ふん▼有限公司 画素の大型化に対応したｉｐｓ液晶ディスプレイ
CN100376990C (zh) * 2003-10-14 2008-03-26 鸿富锦精密工业（深圳）有限公司 平面内切换型液晶显示装置
US7202928B2 (en) * 2003-10-16 2007-04-10 Lg. Philips Lcd Co., Ltd Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same
CN100376944C (zh) * 2003-11-17 2008-03-26 鸿富锦精密工业（深圳）有限公司 多域垂直取向方式液晶显示装置
KR100595453B1 (ko) * 2003-11-29 2006-06-30 엘지.필립스 엘시디 주식회사 수평전계방식 액정표시소자
KR100686343B1 (ko) * 2003-11-29 2007-02-22 삼성에스디아이 주식회사 유기 전계 발광 표시 장치
KR100568959B1 (ko) * 2003-12-11 2006-04-07 엘지.필립스 엘시디 주식회사 액정표시장치의 액정셀 공정
KR100643039B1 (ko) * 2003-12-11 2006-11-10 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치
US7227607B2 (en) * 2003-12-11 2007-06-05 Lg.Philips Lcd Co., Ltd Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same
KR100564218B1 (ko) * 2003-12-11 2006-03-28 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 기판 및 그 제조 방법
KR100564219B1 (ko) * 2003-12-11 2006-03-28 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 어레이 기판
KR100565948B1 (ko) * 2003-12-11 2006-03-30 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치의 액정셀 공정
KR100565148B1 (ko) * 2003-12-16 2006-03-30 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
KR20050067682A (ko) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치 및 그 구동방법
KR100940987B1 (ko) * 2003-12-29 2010-02-05 엘지디스플레이 주식회사 액정표시장치
KR101071711B1 (ko) * 2003-12-29 2011-10-12 엘지디스플레이 주식회사 횡전계형 액정표시장치
KR100710164B1 (ko) * 2003-12-30 2007-04-20 엘지.필립스 엘시디 주식회사 횡전계 방식 액정 표시 장치
JP4394479B2 (ja) * 2004-02-26 2010-01-06 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置及びその製造方法
TWI356255B (en) * 2004-03-26 2012-01-11 Chimei Innolux Corp A reflective in-plane switching type lcd
KR100616708B1 (ko) * 2004-04-12 2006-08-28 엘지.필립스 엘시디 주식회사 액정표시장치 어레이 기판 및 그 제조방법
TWI345120B (en) * 2004-05-14 2011-07-11 Chimei Innolux Corp An ips liquid crystal display apparatus
CN100483225C (zh) * 2004-05-28 2009-04-29 鸿富锦精密工业（深圳）有限公司 平面内切换型液晶显示装置
KR101085450B1 (ko) * 2005-02-07 2011-11-21 삼성전자주식회사 박막트랜지스터 기판과 그 제조방법
KR101369864B1 (ko) * 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
TWI301554B (en) * 2005-11-16 2008-10-01 Prime View Int Co Ltd Electronic ink display device
TWI449009B (zh) * 2005-12-02 2014-08-11 Semiconductor Energy Lab 顯示裝置和使用該顯示裝置的電子裝置
KR20070070649A (ko) * 2005-12-29 2007-07-04 삼성에스디아이 주식회사 전자 방출 소자, 이를 구비한 백라이트 유닛, 이를 구비한평판 디스플레이 장치 및 전자 방출 소자의 구동 방법
TWI345090B (en) * 2006-04-07 2011-07-11 Chimei Innolux Corp Tft substrate and method for reducing interference between metal lines
KR102481798B1 (ko) 2006-06-09 2022-12-26 애플 인크. 터치 스크린 액정 디스플레이
CN104965621B (zh) 2006-06-09 2018-06-12 苹果公司 触摸屏液晶显示器及其操作方法
US8035765B2 (en) * 2006-11-13 2011-10-11 Hannstar Display Corp. TFT array substrate, LCD panel and liquid crystal display
US9710095B2 (en) 2007-01-05 2017-07-18 Apple Inc. Touch screen stack-ups
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
KR101293570B1 (ko) * 2007-03-21 2013-08-06 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 유기 발광 표시 장치
US20080268938A1 (en) * 2007-04-28 2008-10-30 Stephane Pierre Doutriaux Systems and methods for gambling using combinations of gaming devices
CN101398532B (zh) * 2007-09-28 2010-09-29 群康科技(深圳)有限公司 电润湿显示器
US8018399B2 (en) * 2009-11-18 2011-09-13 Century Display(ShenZhen) Co., Ltd. Pixel array
KR100974777B1 (ko) * 2009-12-11 2010-08-06 엘지이노텍 주식회사 발광 소자
TWI408476B (zh) * 2010-04-30 2013-09-11 Hannstar Display Corp 薄膜電晶體陣列基板及液晶面板
US8804056B2 (en) 2010-12-22 2014-08-12 Apple Inc. Integrated touch screens
US8952529B2 (en) 2011-11-22 2015-02-10 Stats Chippac, Ltd. Semiconductor device with conductive layer over substrate with vents to channel bump material and reduce interconnect voids
CN102799035B (zh) 2012-05-04 2016-04-13 京东方科技集团股份有限公司 一种阵列基板、液晶面板和显示装置
KR102072803B1 (ko) * 2013-04-12 2020-02-04 삼성디스플레이 주식회사 박막 반도체 장치 및 유기 발광 표시 장치
KR102020895B1 (ko) 2013-10-31 2019-09-11 엘지디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
CN104777683B (zh) * 2015-04-27 2017-10-24 深圳市华星光电技术有限公司 一种液晶显示面板及装置
KR102410039B1 (ko) * 2015-11-30 2022-06-20 엘지디스플레이 주식회사 표시장치의 화소구조 및 이를 포함한 터치스크린 내장형 표시장치
CN206248976U (zh) * 2016-12-05 2017-06-13 京东方科技集团股份有限公司 阵列基板和显示装置
CN108447871B (zh) * 2018-03-13 2020-12-25 深圳市华星光电半导体显示技术有限公司 像素单元及其制作方法、显示装置
CN111983862B (zh) * 2020-08-19 2022-07-12 武汉华星光电技术有限公司 阵列基板、阵列基板制作方法及液晶显示面板

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5327937B2 (zh) 1971-10-23 1978-08-11
US3814501A (en) 1972-12-04 1974-06-04 Rca Corp Liquid-crystal display device and method of making
US3838909A (en) 1973-04-06 1974-10-01 Rockwell International Corp Ambient illuminations system for liquid crystal display
US3864905A (en) 1973-11-14 1975-02-11 Hoffmann La Roche Horological instrument incorporating means for illuminating a liquid crystal display
JPS5120854A (ja) 1974-08-12 1976-02-19 Keiji Iimura Ekishosochi
US4097128A (en) 1975-04-24 1978-06-27 Tokyo Shibaura Electric Co., Ltd. Liquid crystal color display devices
JPS55140875A (en) 1979-04-19 1980-11-04 Matsushita Electric Ind Co Ltd Plain plate type display unit
DE3019832C2 (de) 1979-05-28 1986-10-16 Kabushiki Kaisha Suwa Seikosha, Shinjuku, Tokio/Tokyo Treiberschaltung für eine Flüssigkristallanzeigematrix
JPS5691277A (en) 1979-12-25 1981-07-24 Citizen Watch Co Ltd Liquiddcrystal display panel
AU588062B2 (en) 1985-10-16 1989-09-07 Sanyo Electric Co., Ltd. Lcd matrix alternating drive circuit
CH662239GA3 (zh) 1986-02-27 1987-09-30
FI74871B (fi) * 1986-06-26 1987-12-31 Sinisalo Sport Oy Skyddsklaede.
DE3851557T2 (de) 1987-03-18 1995-01-26 Matsushita Electric Ind Co Ltd Videoprojektor.
JPS6437585A (en) 1987-08-04 1989-02-08 Nippon Telegraph & Telephone Active matrix type display device
JP2653099B2 (ja) 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JPH0256523A (ja) 1988-08-23 1990-02-26 Fujitsu Ltd 液晶パネル
US5194976A (en) 1989-07-25 1993-03-16 Casio Computer Co., Ltd. Liquid crystal display device and method of manufacturing the same
US5128782A (en) 1989-08-22 1992-07-07 Wood Lawson A Liquid crystal display unit which is back-lit with colored lights
US5035490A (en) 1990-01-09 1991-07-30 Hewlett-Packard Company Fiber optic
DE69112698T2 (de) 1990-05-07 1996-02-15 Fujitsu Ltd Anzeigeeinrichtung von höher Qualität mit aktiver Matrix.
JP2784700B2 (ja) 1990-08-13 1998-08-06 キヤノン株式会社 強誘電性液晶素子
JPH04174417A (ja) 1990-11-07 1992-06-22 Sharp Corp カラー液晶表示装置
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950001360B1 (ko) 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
JPH0572999A (ja) 1991-09-17 1993-03-26 Hitachi Ltd 液晶表示装置及びその駆動方法
US5648793A (en) 1992-01-08 1997-07-15 Industrial Technology Research Institute Driving system for active matrix liquid crystal display
TW214603B (en) 1992-05-13 1993-10-11 Seiko Electron Co Ltd Semiconductor device
FR2693305B1 (fr) 1992-07-02 1994-09-30 Sagem Dispositif de visualisation à cristaux liquides, à matrice active.
JP2940354B2 (ja) * 1992-09-18 1999-08-25 株式会社日立製作所 液晶表示装置
DE69332575T2 (de) 1992-09-18 2003-11-20 Hitachi, Ltd. Flüssigkristall-Anzeigevorrichtung
RU2066074C1 (ru) 1992-12-30 1996-08-27 Малое научно-производственное предприятие "ЭЛО" Активная отображающая матрица для жидкокристаллических экранов
JP3127640B2 (ja) * 1992-12-28 2001-01-29 株式会社日立製作所 アクティブマトリクス型液晶表示装置
JPH06214244A (ja) * 1993-01-14 1994-08-05 Hitachi Ltd アクティブマトリクス型液晶表示装置
US5583678A (en) 1993-03-12 1996-12-10 Casio Computer Co., Ltd. Color liquid crystal display apparatus
JPH0772491A (ja) * 1993-07-02 1995-03-17 Hitachi Ltd 単純マトリクス型液晶表示装置
JP2701698B2 (ja) * 1993-07-20 1998-01-21 株式会社日立製作所 液晶表示装置
JPH0743716A (ja) * 1993-07-28 1995-02-14 Hitachi Ltd 液晶表示装置の製造方法
JPH0743744A (ja) * 1993-07-30 1995-02-14 Hitachi Ltd 液晶表示装置およびその製造方法
KR100367869B1 (ko) * 1993-09-20 2003-06-09 가부시끼가이샤 히다치 세이사꾸쇼 액정표시장치
JPH07120791A (ja) * 1993-10-28 1995-05-12 Hitachi Ltd アクティブマトリクス型液晶表示装置
JP2952744B2 (ja) 1993-11-04 1999-09-27 松下電器産業株式会社 薄膜トランジスター集積装置
JP3294689B2 (ja) * 1993-11-09 2002-06-24 株式会社日立製作所 液晶表示装置
JPH07239480A (ja) 1994-03-01 1995-09-12 Hitachi Ltd 液晶表示基板
JPH07261181A (ja) 1994-03-17 1995-10-13 Hitachi Ltd 液晶表示装置の製造方法
TW289097B (zh) 1994-08-24 1996-10-21 Hitachi Ltd
TW329500B (en) 1995-11-14 1998-04-11 Handotai Energy Kenkyusho Kk Electro-optical device
US5745203A (en) 1996-03-28 1998-04-28 Motorola, Inc. Liquid crystal display device including multiple ambient light illumination modes with switchable holographic optical element
KR100219116B1 (ko) 1996-03-30 1999-09-01 구자홍 티에프티 엘시디 디스플레이의 구동방법
JPH1021907A (ja) 1996-07-01 1998-01-23 Chuo Denki Kogyo Kk 水素吸蔵合金粉末の製造方法とＮｉ−水素電池

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KR970028759A (ko) 1997-06-24
US20010045556A1 (en) 2001-11-29

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