TW202136448A - 保護膜形成用片、具保護膜之晶片的製造方法、以及積層物 - Google Patents
保護膜形成用片、具保護膜之晶片的製造方法、以及積層物 Download PDFInfo
- Publication number
- TW202136448A TW202136448A TW110103355A TW110103355A TW202136448A TW 202136448 A TW202136448 A TW 202136448A TW 110103355 A TW110103355 A TW 110103355A TW 110103355 A TW110103355 A TW 110103355A TW 202136448 A TW202136448 A TW 202136448A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- curable resin
- resin film
- protective film
- sheet
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 93
- 230000015572 biosynthetic process Effects 0.000 title abstract description 23
- 239000011253 protective coating Substances 0.000 title abstract 4
- 229920005989 resin Polymers 0.000 claims abstract description 372
- 239000011347 resin Substances 0.000 claims abstract description 372
- 235000012431 wafers Nutrition 0.000 claims description 341
- 230000001681 protective effect Effects 0.000 claims description 329
- 229920001187 thermosetting polymer Polymers 0.000 claims description 66
- 239000012790 adhesive layer Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 35
- 239000000853 adhesive Substances 0.000 claims description 29
- 230000001070 adhesive effect Effects 0.000 claims description 29
- 238000012360 testing method Methods 0.000 claims description 27
- 238000000227 grinding Methods 0.000 claims description 26
- 238000012545 processing Methods 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000005498 polishing Methods 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 30
- 239000000203 mixture Substances 0.000 description 30
- 238000005520 cutting process Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 15
- 238000001723 curing Methods 0.000 description 14
- 229920000642 polymer Polymers 0.000 description 14
- 239000000654 additive Substances 0.000 description 13
- -1 and the like Polymers 0.000 description 13
- 239000002904 solvent Substances 0.000 description 13
- 239000000945 filler Substances 0.000 description 12
- 238000011049 filling Methods 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 9
- 239000007822 coupling agent Substances 0.000 description 7
- 239000011256 inorganic filler Substances 0.000 description 7
- 229910003475 inorganic filler Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003431 cross linking reagent Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 239000003999 initiator Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 229920000728 polyester Polymers 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 229920002554 vinyl polymer Polymers 0.000 description 6
- 206010040844 Skin exfoliation Diseases 0.000 description 5
- 150000001241 acetals Chemical class 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 238000000518 rheometry Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 239000000306 component Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical class OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920002397 thermoplastic olefin Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2429/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Derivatives of such polymer
- C08J2429/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials Engineering (AREA)
- Laminated Bodies (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020-031717 | 2020-02-27 | ||
JP2020031717 | 2020-02-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202136448A true TW202136448A (zh) | 2021-10-01 |
Family
ID=77490089
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110103355A TW202136448A (zh) | 2020-02-27 | 2021-01-29 | 保護膜形成用片、具保護膜之晶片的製造方法、以及積層物 |
TW110106852A TW202200374A (zh) | 2020-02-27 | 2021-02-26 | 樹脂膜、複合片、以及具第1保護膜之半導體晶片的製造方法 |
TW110106835A TW202200373A (zh) | 2020-02-27 | 2021-02-26 | 樹脂膜、複合片、以及具第1保護膜之半導體晶片的製造方法 |
TW110106841A TW202140664A (zh) | 2020-02-27 | 2021-02-26 | 熱硬化性樹脂膜、複合片、以及具第1保護膜之半導體晶片的製造方法 |
TW110106842A TW202146540A (zh) | 2020-02-27 | 2021-02-26 | 樹脂膜、複合片、以及半導體裝置之製造方法 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110106852A TW202200374A (zh) | 2020-02-27 | 2021-02-26 | 樹脂膜、複合片、以及具第1保護膜之半導體晶片的製造方法 |
TW110106835A TW202200373A (zh) | 2020-02-27 | 2021-02-26 | 樹脂膜、複合片、以及具第1保護膜之半導體晶片的製造方法 |
TW110106841A TW202140664A (zh) | 2020-02-27 | 2021-02-26 | 熱硬化性樹脂膜、複合片、以及具第1保護膜之半導體晶片的製造方法 |
TW110106842A TW202146540A (zh) | 2020-02-27 | 2021-02-26 | 樹脂膜、複合片、以及半導體裝置之製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (5) | JPWO2021171898A1 (ko) |
KR (5) | KR20220147084A (ko) |
CN (5) | CN115176333A (ko) |
TW (5) | TW202136448A (ko) |
WO (5) | WO2021171898A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2022138946A1 (ko) * | 2020-12-25 | 2022-06-30 | ||
JP7095780B1 (ja) * | 2021-06-09 | 2022-07-05 | 住友ベークライト株式会社 | 離型フィルムおよび成型品の製造方法 |
JP2024047022A (ja) * | 2022-09-26 | 2024-04-05 | 株式会社レゾナック | 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム |
JP2024047019A (ja) * | 2022-09-26 | 2024-04-05 | 株式会社レゾナック | 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59205426A (ja) | 1983-05-06 | 1984-11-21 | Nippon Mining Co Ltd | 転炉の操業方法 |
WO2003003445A1 (en) * | 2001-06-29 | 2003-01-09 | Fujitsu Limited | Sheet for underfill, method for underfilling semiconductor chip, and method for mounting semiconductor chip |
JP4776188B2 (ja) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | 半導体装置製造方法およびウエハ加工用テープ |
JP4532358B2 (ja) * | 2005-06-15 | 2010-08-25 | 株式会社ディスコ | 半導体チップの製造方法 |
JP5564782B2 (ja) * | 2008-06-17 | 2014-08-06 | 日立化成株式会社 | 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置 |
JP2011171712A (ja) * | 2010-01-21 | 2011-09-01 | Hitachi Chem Co Ltd | 半導体ウエハ加工用接着テープ、半導体ウエハ加工用接着テープ付き半導体ウエハの製造方法、半導体装置の製造方法及び半導体装置 |
JP5738263B2 (ja) * | 2012-12-25 | 2015-06-17 | 日立化成株式会社 | 半導体装置の製造方法 |
KR102177881B1 (ko) * | 2013-03-19 | 2020-11-12 | 린텍 가부시키가이샤 | 보호막 형성용 필름, 보호막을 구비한 칩 및 보호막을 구비한 칩의 제조 방법 |
JP6328987B2 (ja) * | 2014-04-22 | 2018-05-23 | デクセリアルズ株式会社 | 半導体装置の製造方法 |
JP2015092594A (ja) | 2014-12-10 | 2015-05-14 | 日東電工株式会社 | 保護層形成用フィルム |
US20190055396A1 (en) * | 2015-11-04 | 2019-02-21 | Lintec Corporation | Curable resin film and first protective film forming sheet |
WO2017077957A1 (ja) | 2015-11-04 | 2017-05-11 | リンテック株式会社 | 半導体装置の製造方法 |
WO2018066302A1 (ja) * | 2016-10-05 | 2018-04-12 | リンテック株式会社 | 第1保護膜形成用シート |
CN110622302B (zh) * | 2017-05-17 | 2022-11-22 | 琳得科株式会社 | 半导体装置及其制造方法 |
JP7098221B2 (ja) * | 2017-09-08 | 2022-07-11 | 株式会社ディスコ | ウェーハの加工方法 |
TWI783082B (zh) * | 2017-11-17 | 2022-11-11 | 日商琳得科股份有限公司 | 熱硬化性樹脂膜及第一保護膜形成用片材 |
JP7218297B2 (ja) * | 2017-11-17 | 2023-02-06 | リンテック株式会社 | 第1保護膜付き半導体チップ、第1保護膜付き半導体チップの製造方法、及び半導体チップ・第1保護膜積層体の評価方法 |
JP7064184B2 (ja) * | 2017-12-11 | 2022-05-10 | 日東電工株式会社 | ダイシングテープ一体型封止用シート及び半導体装置の製造方法 |
TWI825080B (zh) * | 2018-03-30 | 2023-12-11 | 日商琳得科股份有限公司 | 半導體晶片的製造方法 |
-
2021
- 2021-01-29 WO PCT/JP2021/003161 patent/WO2021171898A1/ja active Application Filing
- 2021-01-29 TW TW110103355A patent/TW202136448A/zh unknown
- 2021-01-29 JP JP2022503187A patent/JPWO2021171898A1/ja active Pending
- 2021-01-29 CN CN202180016958.8A patent/CN115176333A/zh active Pending
- 2021-01-29 KR KR1020227028764A patent/KR20220147084A/ko unknown
- 2021-02-25 JP JP2022503688A patent/JPWO2021172426A1/ja active Pending
- 2021-02-25 WO PCT/JP2021/007049 patent/WO2021172410A1/ja active Application Filing
- 2021-02-25 CN CN202180006372.3A patent/CN114728508A/zh active Pending
- 2021-02-25 KR KR1020227014068A patent/KR20220147571A/ko active Search and Examination
- 2021-02-25 KR KR1020227011241A patent/KR20220147063A/ko active Search and Examination
- 2021-02-25 CN CN202180005977.0A patent/CN114555697A/zh active Pending
- 2021-02-25 WO PCT/JP2021/007082 patent/WO2021172424A1/ja active Application Filing
- 2021-02-25 KR KR1020227014617A patent/KR20220147064A/ko active Search and Examination
- 2021-02-25 JP JP2022503678A patent/JPWO2021172410A1/ja active Pending
- 2021-02-25 CN CN202180006480.0A patent/CN114729142A/zh active Pending
- 2021-02-25 JP JP2022503687A patent/JPWO2021172424A1/ja active Pending
- 2021-02-25 WO PCT/JP2021/007103 patent/WO2021172431A1/ja active Application Filing
- 2021-02-25 KR KR1020227010219A patent/KR20220147062A/ko active Search and Examination
- 2021-02-25 WO PCT/JP2021/007087 patent/WO2021172426A1/ja active Application Filing
- 2021-02-25 JP JP2022503692A patent/JPWO2021172431A1/ja active Pending
- 2021-02-25 CN CN202180005802.XA patent/CN114585683A/zh active Pending
- 2021-02-26 TW TW110106852A patent/TW202200374A/zh unknown
- 2021-02-26 TW TW110106835A patent/TW202200373A/zh unknown
- 2021-02-26 TW TW110106841A patent/TW202140664A/zh unknown
- 2021-02-26 TW TW110106842A patent/TW202146540A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN114585683A (zh) | 2022-06-03 |
WO2021172410A1 (ja) | 2021-09-02 |
JPWO2021172410A1 (ko) | 2021-09-02 |
CN114729142A (zh) | 2022-07-08 |
WO2021172424A1 (ja) | 2021-09-02 |
WO2021172426A1 (ja) | 2021-09-02 |
TW202200374A (zh) | 2022-01-01 |
CN114555697A (zh) | 2022-05-27 |
KR20220147062A (ko) | 2022-11-02 |
WO2021172431A1 (ja) | 2021-09-02 |
KR20220147084A (ko) | 2022-11-02 |
WO2021171898A1 (ja) | 2021-09-02 |
KR20220147064A (ko) | 2022-11-02 |
TW202140664A (zh) | 2021-11-01 |
TW202146540A (zh) | 2021-12-16 |
KR20220147063A (ko) | 2022-11-02 |
JPWO2021172424A1 (ko) | 2021-09-02 |
JPWO2021171898A1 (ko) | 2021-09-02 |
CN115176333A (zh) | 2022-10-11 |
KR20220147571A (ko) | 2022-11-03 |
JPWO2021172426A1 (ko) | 2021-09-02 |
CN114728508A (zh) | 2022-07-08 |
JPWO2021172431A1 (ko) | 2021-09-02 |
TW202200373A (zh) | 2022-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW202136448A (zh) | 保護膜形成用片、具保護膜之晶片的製造方法、以及積層物 | |
TWI488937B (zh) | Followed by a method of assembling a semiconductor wafer and a semiconductor wafer | |
JP4918181B2 (ja) | 半導体ウェハ表面保護用シート、およびそれを用いた半導体ウェハの保護方法と半導体装置の製造方法 | |
KR101411080B1 (ko) | 웨이퍼 가공용 점착 테이프 | |
TWI693268B (zh) | 半導體晶圓表面保護膜以及半導體裝置的製造方法 | |
KR20160077076A (ko) | 반도체 접합용 접착 시트 및 반도체 장치의 제조 방법 | |
JP6958791B2 (ja) | 半導体装置の製造方法 | |
TW202141603A (zh) | 半導體裝置製造用片以及具膜狀接著劑之半導體晶片的製造方法 | |
JP2015220377A (ja) | 粘接着フィルム一体型表面保護テープおよび粘接着フィルム一体型表面保護テープを用いた半導体チップの製造方法 | |
JP2017224782A (ja) | 樹脂膜形成用フィルムの切断方法、半導体装置の製造方法及び積層構造体 | |
TW201704395A (zh) | 薄膜狀接著劑、接著板片以及半導體裝置之製造方法 | |
JP2016194020A (ja) | ダイシングフィルム一体型半導体用接着剤 | |
CN113518814B (zh) | 固晶片、及带膜状粘合剂的半导体芯片的制造方法 | |
WO2023276731A1 (ja) | 保護膜付きチップの製造方法 | |
TW202142647A (zh) | 膜狀接著劑以及膜狀接著劑複合片 | |
TWI698962B (zh) | 半導體裝置之製造方法 | |
JP2004363139A (ja) | 半導体ウエハ裏面研削用粘着シート | |
JP2023005208A (ja) | 保護膜付きチップの製造方法 | |
WO2022138946A1 (ja) | 半導体チップの製造方法 | |
TW202242975A (zh) | 半導體裝置的製造方法 | |
TWI826660B (zh) | 黏晶片、以及附膜狀接著劑之半導體晶片之製造方法 | |
TW202145323A (zh) | 半導體裝置製造用片以及半導體裝置製造用片之製造方法 | |
JP2023110879A (ja) | 硬化性樹脂フィルム、複合シート、半導体チップ、及び半導体チップの製造方法 | |
JP2023020205A (ja) | 半導体素子封止用積層体、及び、半導体装置の製造方法 | |
TW202302675A (zh) | 切晶黏晶膜及半導體裝置之製造方法 |