TWI693268B - 半導體晶圓表面保護膜以及半導體裝置的製造方法 - Google Patents

半導體晶圓表面保護膜以及半導體裝置的製造方法 Download PDF

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TWI693268B
TWI693268B TW105120959A TW105120959A TWI693268B TW I693268 B TWI693268 B TW I693268B TW 105120959 A TW105120959 A TW 105120959A TW 105120959 A TW105120959 A TW 105120959A TW I693268 B TWI693268 B TW I693268B
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semiconductor wafer
adhesive
layer
item
patent application
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TW105120959A
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TW201710433A (zh
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鎌田潤
川崎登
宇杉真一
助川誠
木下仁
五十嵐康二
森本哲光
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日商三井化學東賽璐股份有限公司
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Abstract

本發明的半導體晶圓表面保護膜依序具有基材層A、黏著性吸收層B及黏著性表層C，黏著性吸收層B包含含有熱硬化性樹脂b1的黏著劑組成物，黏著性吸收層B的於25℃以上且小於250℃的範圍內的儲存模數G'b的最小值G'bmin為0.001MPa以上且小於0.1MPa，250℃下的儲存模數G'b250為0.005MPa以上，且顯示出G'bmin的溫度為50℃以上且150℃以下，黏著性表層C的於25℃以上且小於250℃的範圍內的儲存模數G'c的最小值G'cmin為0.03MPa以上。

Description

半導體晶圓表面保護膜以及半導體裝置的製造 方法
本發明是有關於一種半導體晶圓表面保護膜以及半導體裝置的製造方法。
半導體裝置通常可經過以下步驟而製造：對半導體晶圓的非電路形成面進行研磨而使半導體晶圓的厚度變薄的步驟(背部研磨(back grinding)步驟)；或藉由濺鍍等在研磨後的半導體晶圓的非電路形成面上形成電極的步驟(背墊金屬(back metal)步驟)等。就為了抑制研磨屑或研磨水等對半導體晶圓的電路形成面的污染等方面而言，該些步驟是於在半導體晶圓的電路形成面上貼附有表面保護膜的狀態下進行。
對於如此而使用的表面保護膜，要求可良好地追隨於半導體晶圓的電路形成面的凹凸，且於剝離時可無殘膠地進行剝離。
關於表面保護膜，例如已提出有：依序含有基材層、中間層及黏著劑層，且中間層含有丙烯酸系聚合物及異氰酸酯交聯劑，黏著劑層含有具有碳-碳雙鍵的丙烯酸系聚合物、異氰酸酯系交聯劑及光聚合起始劑的表面保護膜(專利文獻1)；或中間層含有丙烯酸系聚合物、異氰酸酯系交聯劑、紫外線硬化型寡聚物及光聚合起始劑，黏著劑層含有具有碳-碳雙鍵的丙烯酸系聚合物、 異氰酸酯系交聯劑及光聚合起始劑的表面保護膜(專利文獻2)等。該些表面保護膜是於剝離時照射紫外線而使黏著劑層或中間層所含的紫外線硬化型寡聚物硬化，由此容易剝離。
[現有技術文獻]
[專利文獻]
[專利文獻1]日本專利第4369584號公報
[專利文獻2]日本專利第4367769號公報
再者，於背部研磨步驟或背墊金屬步驟中，半導體晶圓容易成為高溫。尤其於背墊金屬步驟中，因於研磨後的半導體晶圓的非電路形成面上蒸鍍銅或鋁等的金屬薄膜，故半導體晶圓是置於真空下，且容易成為250℃附近的高溫。於經過所述減壓高溫的步驟的情形時，若表面保護膜的中間層或黏著劑層的彈性係數過低，則有於剝離時膜的黏著力容易過高而發生晶圓的破裂、或容易產生殘膠等問題。
另一方面，若表面保護膜的中間層或黏著劑層的彈性係數過高，則表面保護膜不追隨於晶圓的凹凸，氣泡容易混入至晶圓的凹凸與膜之間。若將在與膜之間混入有氣泡的晶圓於高溫下進行處理，則有氣泡膨脹而容易產生膜的凸起、於形成金屬薄膜時發生不良狀況之虞。
相對於此，認為專利文獻1或專利文獻2的表面保護膜 於進行背墊金屬步驟等高溫步驟之前，藉由紫外線照射而使黏著劑層或中間層硬化，由此可於某種程度上提高彈性係數。然而，為了對黏著劑層或中間層以充分進行硬化的程度照射紫外線，必須提高基材層的透明性而提高紫外光的透過性。具有充分的耐熱性、且具有高透明性的基材層少，基材層的耐熱性容易變得不充分。
本發明是鑒於所述情況而成，其目的在於提供一種半導體晶圓表面保護膜，該半導體晶圓表面保護膜可良好地追隨於半導體晶圓的電路形成面的凹凸而貼附，且即便於經過背墊金屬步驟等高溫步驟的情形時，亦可抑制剝離時的晶圓的破裂或殘膠。
[1]一種半導體晶圓表面保護膜，依序具有基材層A、黏著性吸收層B及黏著性表層C，所述黏著性吸收層B包含含有熱硬化性樹脂b1的黏著劑組成物，所述黏著性吸收層B的於25℃以上且小於250℃的範圍內的儲存模數G'b的最小值G'bmin為0.001MPa以上且小於0.1MPa，250℃下的儲存模數G'b250為0.005MPa以上，且顯示出所述G'bmin的溫度為50℃以上且150℃以下，所述黏著性表層C的於25℃以上且小於250℃的範圍內的儲存模數G'c的最小值G'cmin為0.03MPa以上。
[2]如[1]所述的半導體晶圓表面保護膜，其中所述G'cmin大於所述G'bmin。
[3]如[1]或[2]所述的半導體晶圓表面保護膜，其中所述 G'b250大於所述G'bmin。
[4]如[1]至[3]中任一項所述的半導體晶圓表面保護膜，其中所述G'cmin為0.03MPa以上且小於3MPa，且250℃下的所述黏著性表層C的儲存模數G'c250為0.1MPa以上。
[5]如[1]至[4]中任一項所述的半導體晶圓表面保護膜，其中所述黏著性吸收層B的厚度Tb為10μm以上且600μm以下，且所述黏著性表層C的厚度Tc為1μm以上且50μm以下。
[6]如[1]至[5]中任一項所述的半導體晶圓表面保護膜，其中所述熱硬化性樹脂b1為含有熱聚合性雙鍵、環氧基或氮丙啶基的熱硬化性樹脂。
[7]如[1]至[6]中任一項所述的半導體晶圓表面保護膜，其中所述熱硬化性樹脂b1為含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物。
[8]如[1]至[7]中任一項所述的半導體晶圓表面保護膜，其中所述熱硬化性樹脂b1為含有熱聚合性雙鍵的(甲基)丙烯酸酯系聚合物。
[9]如[7]所述的半導體晶圓表面保護膜，其中所述熱硬化性樹脂b1是以所述含有熱聚合性雙鍵、環氧基或氮丙啶基的化合物將所述(甲基)丙烯酸酯系聚合物的所有結構單元中的0.2莫耳%~30莫耳%的結構單元改質而成。
[10]如[9]所述的半導體晶圓表面保護膜，其中所述黏著劑組成物更含有熱聚合起始劑。
[11]如[1]至[10]中任一項所述的半導體晶圓表面保護膜，所述黏著劑組成物更含有熱塑性樹脂b2，所述熱硬化性樹脂b1與所述熱塑性樹脂b2之含有比以b1/b2之質量比計為1/99~90/10。
[12]如[11]所述的半導體晶圓表面保護膜，其中所述熱塑性樹脂b2為(甲基)丙烯酸酯聚合物。
[13]如[1]至[12]中任一項所述的半導體晶圓表面保護膜，其中所述黏著劑組成物更含有交聯劑。
[14]如[1]至[13]中任一項所述的半導體晶圓表面保護膜，其中所述黏著性表層C含有(甲基)丙烯酸酯聚合物。
[15]如[14]所述的半導體晶圓表面保護膜，其中所述黏著性表層C所含的所述(甲基)丙烯酸酯聚合物含有熱聚合性雙鍵、環氧基或氮丙啶基。
[16]如[15]所述的半導體晶圓表面保護膜，其中所述黏著性表層C所含的所述含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯聚合物的至少一部分經硬化。
[17]一種半導體裝置的製造方法，包括以下：將如[1]至[16]中任一項所述的半導體晶圓表面保護膜於較顯示出G'bmin的溫度更低的溫度下貼附於半導體晶圓的電路形成面上的步驟；對貼附有所述半導體晶圓表面保護膜的半導體晶圓的非電路形成面進行研磨的步驟；對研磨後的所述半導體晶圓的非電路形成面於顯示出G'bmin的溫度以上的溫度下進行加工的步驟；以及將所述半導體晶圓表面保護膜剝離的步驟。
[18]如[17]所述的半導體裝置的製造方法，其中於所述半導體晶圓的電路形成面上設有0.1μm以上的階差。
[19]如[17]或[18]所述的半導體裝置的製造方法，其中所述於顯示出G'bmin的溫度以上的溫度下進行加工的步驟包括：藉由選自由濺鍍、蒸鍍、鍍敷及化學氣相沈積(Chemical Vapor Deposition，CVD)所組成的群組中的至少一種於所述半導體晶圓的非電路形成面上形成薄膜的步驟；雜質活化退火處理步驟；離子注入步驟或回流步驟。
根據本發明，可提供一種半導體晶圓表面保護膜，該半導體晶圓表面保護膜可良好地追隨於半導體晶圓的電路形成面的凹凸而貼附，且即便於經過背墊金屬步驟等高溫步驟的情形時，亦可抑制剝離時的晶圓的破裂或殘膠。
圖1為表示半導體晶圓表面保護膜的黏著性吸收層B的溫度-儲存模數的分佈的一例的示意圖。
本發明者等人著眼於以下情況：利用「熱硬化性的黏著劑組成物」來構成黏著性吸收層B，由此無需用以使黏著性吸收層B硬化的光照射。進而，本發明者等人進行了潛心研究，結果發現：1)為了提高膜的凹凸追隨性，抑制高溫步驟中的膜的凸起， 主要有效的是將黏著性吸收層B的G'bmin減小至小於0.1MPa；且2)為了於即便經過背墊金屬步驟等高溫步驟的情形時亦抑制剝離時的晶圓的破裂及殘膠，主要有效的是將黏著性吸收層B的G'bmin設為0.001MPa以上，將顯示出G'bmin的溫度設為50℃以上且150℃以下的範圍，將G'b250設為0.005MPa以上，且使黏著性表層C的G'cmin適度增大至0.03MPa以上。本發明是根據此種見解而成。
1.半導體晶圓表面保護膜
半導體晶圓表面保護膜依序含有基材層A、黏著性吸收層B及黏著性表層C。
關於基材層A
基材層A並無特別限定，是由熱塑性樹脂、熱硬化性樹脂、金屬箔、紙等所構成。
熱塑性樹脂的例子中包括：聚對苯二甲酸乙二酯(Polyethylene Terephthalate，PET)、聚萘二甲酸乙二酯(Polyethylene Naphthalate，PEN)等聚酯；聚烯烴系樹脂；聚醯亞胺(Polyimide，PI)；聚醚醚酮(Poly Ether Ether Ketone，PEEK)；聚氯乙烯(polyvinyl chloride，PVC)等聚氯乙烯系樹脂；聚偏二氯乙烯系樹脂；聚醯胺系樹脂；聚胺基甲酸酯；聚苯乙烯系樹脂；丙烯酸系樹脂；氟樹脂；纖維素系樹脂；聚碳酸酯系樹脂等。其中，就具有高耐熱性的方面而言，較佳為熔點為250℃以上、較佳為265℃以上的熱塑性樹脂或者並無明確的熔點以至熱分解的耐 熱性樹脂，更佳為聚醯亞胺或聚酯。熱塑性樹脂的熔點例如可使用示差掃描熱量計(例如DSC220C型，精工電子(Seiko Instruments)(股)製造)以升溫速度10℃/min進行測定。
基材層A的厚度較佳為10μm~300μm，更佳為20μm~200μm。藉由將基材層A的厚度設為一定以上，容易進行半導體晶圓表面保護膜的貼附，於半導體晶圓的研磨時容易穩定地保持半導體晶圓。藉由將基材層A的厚度設為一定以下，將半導體晶圓表面保護膜剝離時的作業性變容易。
基材層A可由一個層構成，亦可由多個層構成。於基材層A是由多個層所構成的情形時，各層的組成可相同亦可不同。
如上文所述，半導體晶圓表面保護膜是貼附於半導體晶圓的電路形成面上。因此，為了使半導體晶圓表面保護膜良好地追隨於半導體晶圓的電路形成面的凸凹而良好地密接，半導體晶圓表面保護膜的黏著性吸收層B的儲存模數較佳為適度低。
另一方面，於半導體晶圓的背墊金屬步驟中，於研磨後的半導體晶圓的非電路形成面上蒸鍍金屬薄膜，故半導體晶圓容易成為250℃附近的高溫。為了即便於所述高溫下亦抑制由半導體晶圓表面保護膜的黏著性吸收層B的變形所致的半導體晶圓的破損、或將半導體晶圓表面保護膜剝離時的殘膠等，較佳為於背墊金屬步驟等高溫步驟中，半導體晶圓表面保護膜的黏著性吸收層B的儲存模數適度高。
如此，半導體晶圓表面保護膜的黏著性吸收層B較佳為 貼附時(常溫)的儲存模數適度低，且背墊金屬步驟等高溫加工時的儲存模數適度高。因此本發明中，較佳為利用含有熱硬化性樹脂及熱聚合起始劑的黏著劑組成物來構成半導體晶圓表面保護膜的黏著性吸收層B。
含有熱硬化性樹脂及熱聚合起始劑的黏著劑組成物藉由高溫步驟中的熱而進行熱硬化性樹脂的硬化反應。藉此，半導體晶圓表面保護膜的黏著性吸收層B可成為如下的層：於室溫下具有適度低的儲存模數；且藉由經過高溫步驟而具有適度高的儲存模數。
再者，可將貼附有半導體晶圓表面保護膜的晶圓自常溫直接導入至高溫步驟中，但有時會產生由來自半導體晶圓表面保護膜或晶圓的水蒸氣所引起的發泡凸起。為了防止此種不良狀況，較佳為於將半導體晶圓表面保護膜貼附於晶圓上之後、進入高溫步驟(加熱步驟)之前，於溫度適度的乾燥步驟中進行半導體晶圓表面保護膜的乾燥、及黏著性吸收層B的部分硬化。乾燥步驟的條件視所使用的熱硬化性樹脂或半導體晶圓表面保護膜的構成而不同，通常能以60℃~180℃的溫度、1秒鐘~30分鐘左右的時間而實施。
關於黏著性吸收層B
黏著性吸收層B可由含有熱硬化性樹脂b1的黏著劑組成物所構成。黏著劑組成物亦可更含有熱聚合起始劑與交聯劑的至少一者。
(熱硬化性樹脂b1)
熱硬化性樹脂b1為含有熱聚合性雙鍵、環氧基或氮丙啶基的聚合物，就容易調整儲存模數等方面而言，較佳為含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物，更佳為含有熱聚合性雙鍵的(甲基)丙烯酸酯系聚合物。再者，本發明的(甲基)丙烯酸酯系聚合物是指甲基丙烯酸酯系聚合物或丙烯酸酯系聚合物。(甲基)丙烯酸酯系聚合物的一部分或全部亦可為多官能(甲基)丙烯酸酯化合物。
含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物是在使(甲基)丙烯酸烷基酯單體、和可與其進行共聚且具有官能基的單體共聚後；以含有熱聚合性雙鍵、環氧基或氮丙啶基的化合物來將所得的共聚物所具有的官能基改質而獲得。
通常甲基丙烯酸酯系聚合物與對應的丙烯酸酯系聚合物相比較，容易於低溫下解聚合，有於耐熱性的方面而言較差的傾向。因此，就提高含有(甲基)丙烯酸酯系聚合物的黏著性吸收層B的耐熱性的觀點而言，用以獲得甲基丙烯酸酯系聚合物的(甲基)丙烯酸烷基酯單體較佳為含有50質量%以上的丙烯酸烷基酯單體。丙烯酸烷基酯單體的例子中包括丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸丁酯、丙烯酸2-乙基己酯等。(甲基)丙烯酸烷基酯單體可為一種，亦可組合兩種以上。
可與(甲基)丙烯酸烷基酯單體進行共聚、且具有官能基的單體中的官能基為用以導入熱聚合性雙鍵、環氧基或氮丙啶基 的官能基；其例子中包括縮水甘油基、羧基、羥基及異氰酸酯基等。
可與(甲基)丙烯酸烷基酯單體進行共聚、且具有官能基的單體的例子中包括：(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸甲基縮水甘油酯等含縮水甘油基的單體；(甲基)丙烯酸、衣康酸、馬來酸酐、丁烯酸、馬來酸、富馬酸等含羧基的單體；(甲基)丙烯酸2-羥基乙酯等含羥基的單體；2-甲基丙烯醯氧基乙基異氰酸酯等含異氰酸酯基的單體等。該些單體中，就於導入熱聚合性雙鍵、環氧基或氮丙啶基的過程中可生成成為交聯點的羥基等方面而言，較佳為含縮水甘油基的單體或含羧基的單體。具有官能基的單體可為一種，亦可組合兩種以上。
含有熱聚合性雙鍵的化合物的例子中包括(甲基)丙烯酸等不飽和羧酸。含有環氧基的化合物的例子中包括：三-(2,3-環氧丙基)異氰脲酸酯、三-(3,4-環氧丁基)異氰脲酸酯、三-(4,5-環氧戊基)異氰脲酸酯、三-(5,6-環氧己基)異氰脲酸酯、三(縮水甘油氧基乙基)異氰脲酸酯等多官能環氧化合物。含有氮丙啶基的化合物的例子中包括：2,2-雙羥甲基丁醇-三[3-(1-氮丙啶基)丙酸酯]、4,4-雙(伸乙基亞胺基羰基胺基)二苯基甲烷等多官能氮丙啶化合物。
例如，藉由使(具有可與縮水甘油基進行加成反應的羧基的)(甲基)丙烯酸作為含有熱聚合性雙鍵的化合物而與含有來源於含縮水甘油基的單體的單元的共聚物反應，可於共聚物中導入熱聚合性雙鍵。另外，藉由使(具有可與羧基進行加成反應的縮 水甘油基的)(甲基)丙烯酸縮水甘油酯作為含有熱聚合性雙鍵的化合物而與含有來源於含羧基的單體的單元的共聚物反應，可於共聚物中導入熱聚合性雙鍵。
與(甲基)丙烯酸烷基酯單體共聚的單體不僅為上文所述的具有官能基的單體，視需要亦可更含有其他單體。其他單體的例子中包括：乙酸乙烯酯、苯乙烯、(甲基)丙烯腈、N-乙烯基吡咯啶酮、(甲基)丙烯醯基嗎啉、環己基馬來醯亞胺、異丙基馬來醯亞胺、(甲基)丙烯醯胺等。
相對於(甲基)丙烯酸酯系聚合物的所有結構單元，含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物中的來源於具有官能基的單體的結構單元的含有比例較佳為0.2莫耳%~30莫耳%，更佳為1莫耳%~20莫耳%。即，較佳為(甲基)丙烯酸酯系聚合物的所有結構單元的0.2莫耳%~30莫耳%、較佳為1莫耳%~20莫耳%經含有熱聚合性雙鍵、環氧基或氮丙啶基的化合物改質。再者，所謂此處所述的結構單元，是指聚合物中的來源於聚合性單體的骨架；所謂所有結構單元，是指聚合物中的來源於聚合性單體的骨架的總數。例如於使(甲基)丙烯酸烷基酯單體90分子與具有官能基的單體10分子共聚而製造聚合物的情形時，相對於所得的聚合物的所有結構單元，來源於具有官能基的單體的結構單元的含有比例成為10莫耳%。藉由將含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯聚合物中的來源於具有官能基的單體的結構單元的含有比例設為一定以上，可提高黏著 性吸收層B的耐熱性，並且表現出經過高溫步驟後的半導體表面保護膜的易剝離性。
含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物的重量平均分子量Mw較佳為50,000~1,000,000，更佳為100,000~1,000,000。藉由將重量平均分子量Mw設為一定以上，於常溫下亦容易保持黏著性吸收層B的片材形狀。藉由將重量平均分子量Mw設為一定以下，黏著性吸收層B的儲存模數不會過高，故對凹凸的追隨性不易受損。
對於含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物而言，為了容易調整黏著劑組成物於常溫下的黏著力或儲存模數，亦可利用交聯劑進行交聯。
交聯劑的例子中包括：季戊四醇聚縮水甘油醚、二甘油聚縮水甘油醚等環氧系交聯劑；四亞甲基二異氰酸酯、六亞甲基二異氰酸酯、聚異氰酸酯等異氰酸酯系交聯劑；以及三聚氰胺系交聯劑等。
相對於黏著劑組成物，含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物的含量可設為70質量%以上、較佳為80質量%以上、進而佳為90質量%以上。
(熱聚合起始劑)
構成黏著性吸收層B的黏著劑組成物含有熱聚合起始劑。關於熱聚合起始劑，於熱硬化性樹脂b1含有熱聚合性雙鍵的情形時，較佳為熱自由基聚合起始劑；於熱硬化性樹脂b1含有環氧基 或氮丙啶基的情形時，較佳為熱陽離子聚合起始劑或熱陰離子聚合起始劑，若為潛伏硬化性則更佳。
熱自由基聚合起始劑的例子中包括偶氮系化合物、偶氮雙異丁腈(Azobisisobutyronitrile，AIBN)、有機過氧化物等，較佳可為有機過氧化物。就具有保存穩定性、且於所使用的高溫步驟中分解的理由而言，有機過氧化物較佳為10小時半衰期溫度為70℃~150℃左右者。
所述有機過氧化物的例子中包括以下化合物，但不限定於該些化合物。
過氧化雙(4-甲基苯甲醯)、己酸第三丁基過氧化-2-乙酯、過氧化苯甲醯、1,1-雙(第三丁基過氧化)-2-甲基環己烷、1,1-雙(第三己基過氧化)環己烷、1,1-雙(第三丁基過氧化)環己烷、2,2-雙(4,4-雙-(第三丁基過氧化)環己基)丙烷、單羧酸第三己基過氧化異丙酯、過氧化馬來酸第三丁酯、2,2-雙-(第三丁基過氧化)丁烷、過氧化乙酸第三丁酯、4,4-雙-(第三丁基過氧化)戊酸正丁酯、雙(2-第三丁基過氧化異丙基)苯、過氧化二異丙苯、過氧化雙-第三己基、2,5-二甲基-2,5-雙(第三丁基過氧化)己烷、過氧化第三丁基異丙苯、過氧化二-第三丁基2,5-二甲基-2,5-雙(第三丁基過氧化)己炔、氫過氧化二異丙基苯。
熱陽離子聚合起始劑的例子中包括以下化合物，但不限定於該些化合物。
三苯基膦等膦化合物； 四苯基鏻．四苯基硼酸鹽等鏻鹽。
熱陰離子聚合起始劑的例子中包括以下化合物，但不限定於該些化合物。
哌啶、N,N-二甲基哌嗪、三伸乙基二胺、二氮雜雙環十一烯、二氮雜雙環壬烯、三(二甲基胺基甲基)苯酚等三級胺； 二氮雜雙環十一烯-辛酸鹽、二氮雜雙環十一烯-甲酸鹽、二氮雜雙環十一烯-對甲苯磺酸鹽、二氮雜雙環十一烯-鄰苯二甲酸鹽等三級胺鹽； 咪唑、2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑鎓偏苯三酸鹽、1-氰基乙基-2-苯基咪唑鎓偏苯三酸鹽、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等咪唑化合物。
相對於熱硬化性樹脂b1(較佳為含有熱聚合性雙鍵的(甲基)丙烯酸酯聚合物)100質量份，熱聚合起始劑的含量較佳為0.01質量份~10質量份，更佳為0.1質量份~5質量份。藉由將熱聚合起始劑的含量設為10質量份以下，可良好地抑制半導體表面保護膜的保存過程中的黏著力降低、或剝離後的晶圓表面的污染等。另一方面，藉由將熱聚合起始劑的含量設為0.01質量份以上，可良好地抑制由半導體表面保護膜的黏著力的增大所致的使用時的殘膠或晶圓的破裂等。
(交聯劑)
構成黏著性吸收層B的黏著劑組成物亦可更含有交聯劑。藉由在黏著劑組成物中添加交聯劑，而於使用環境下於黏著性吸收層B中引起交聯反應，抑制G'bmin過度降低。
交聯劑的例子中包括：季戊四醇聚縮水甘油醚、二甘油聚縮水甘油醚等環氧系交聯劑；四亞甲基二異氰酸酯、六亞甲基二異氰酸酯或其加成物、聚氫化二甲苯二異氰酸酯或其加成物、聚異氰酸酯等異氰酸酯系交聯劑；以及三聚氰胺系交聯劑等。異氰酸酯系交聯劑的市售品的例子中包括：奧萊斯達(Olester)P49-75S、塔克奈特(Takenate)D-120N、塔克奈特(Takenate)D-160N及塔克奈特(Takenate)D-170N(均為三井化學股份有限公司製造)等。
相對於需進行交聯的含有熱聚合性雙鍵的(甲基)丙烯酸酯系聚合物b 100質量份，構成黏著性吸收層B的黏著劑組成物中的交聯劑的含量較佳為20質量份以下，更佳為0.1質量份~20質量份，進而佳為0.1質量份~10質量份。藉由將交聯劑的量設為20質量份以下，可良好地抑制將半導體晶圓表面保護膜貼附於晶圓上時的凹凸吸收性的降低。
構成黏著性吸收層B的黏著劑組成物亦可於不損及本發明的效果的範圍內，更含有其他樹脂或添加劑。
其他樹脂的例子可列舉熱塑性樹脂b2。熱塑性樹脂b2較佳為(甲基)丙烯酸酯系聚合物。該(甲基)丙烯酸酯系聚合物可與 上文所述的以含有熱聚合性雙鍵、環氧基或氮丙啶基的化合物改質之前的「(甲基)丙烯酸酯系聚合物」相同。黏著性吸收層B中的熱硬化性樹脂b1與熱塑性樹脂b2之含有比率以質量比計可設為b1/b2=1/99~90/10。
其他添加劑的例子中包括增黏劑、塑化劑、柔軟劑、填充劑、抗氧化劑等。例如，構成黏著性吸收層B的黏著劑組成物可於不損及黏著劑組成物的特性的範圍內，視需要而含有用以提高黏著劑組成物的保存穩定性的聚合抑制劑或顏料、染料等。
黏著性吸收層B的於25℃以上且小於250℃的範圍內測定的儲存模數G'b較佳為於50℃以上且150℃以下的範圍內具有最小值G'bmin，更佳為於75℃以上且125℃以下的範圍內具有最小值G'bmin。若顯示出G'bmin的溫度為50℃以上，則保存穩定性良好(即便經過一定時間後亦可維持低的彈性係數)，故容易獲得穩定的貼附性(追隨性)。另一方面，若顯示出G'bmin的溫度為150℃以下，則可抑制於剝離時黏著力過度上升、或產生殘膠的情況。
黏著性吸收層B的G'bmin較佳為0.001MPa以上且小於0.1MPa，更佳為0.005MPa以上。藉由將黏著性吸收層B的G'bmin設為一定以上，而容易保持黏著性吸收層B的形狀。藉由將黏著性吸收層B的G'bmin設為一定以下，可良好地追隨晶圓的電路形成面的凹凸，且亦可吸收應力。藉此，可抑制因氣泡混入至凹凸與膜之間、且該氣泡於高溫下膨脹而產生的膜的凸起。黏 著性吸收層B的G'bmin或顯示出該G'bmin的溫度例如可藉由黏著劑組成物中的交聯劑的量或種類等來調整。
黏著性吸收層B的G'b250較佳為0.005MPa以上，進而佳為0.01MPa以上。G'b250的上限可設為10MPa左右。若G'b250為0.005MPa以上，則可降低剝離時的膜的黏著力，可抑制晶圓的破裂。若G'b250為10MPa以下，則凹凸追隨性不易受損。黏著性吸收層B的G'b250可藉由熱硬化性樹脂b1的含有比例、熱硬化性樹脂b1所含的熱聚合性雙鍵基的含有比例、熱聚合起始劑的種類、交聯劑的含量等而調整。
G'b250較佳為大於G'bmin。其原因在於：可獲得對晶圓的凹凸的良好的追隨性，且可充分降低剝離時的膜的黏著力。
黏著性吸收層B的G'bmin與250℃下的儲存模數G'b250較佳為滿足下述式。
G'b250/G'bmin≧1.5…式(1)
藉由將G'b250/G'bmin設為一定以上，可提高貼附時的黏著性吸收層B對凹凸的追隨性，且可抑制高溫加工時的黏著性吸收層B的殘膠或晶圓的破裂等。
為了將G'b250/G'bmin設為一定以上，較佳為由上文所述的含有熱硬化性樹脂b1及熱聚合起始劑的黏著劑組成物來構成黏著性吸收層B。關於G'b250/G'bmin的調整，可藉由熱硬化性樹 脂b1的含有比例、熱硬化性樹脂b1所含的具有熱聚合性雙鍵的基團的含有比例、熱聚合起始劑的種類、交聯劑的含量等而調整。
黏著性吸收層B的25℃下的儲存模數G'b25較佳為0.001MPa以上且小於0.7MPa，更佳為0.01MPa以上且0.5MPa以下。若黏著性吸收層B的G'b25為0.001MPa以上，則可良好地抑制由黏著性吸收層B自膜中滲出所致的作業性的降低、或切出性的降低。另一方面，若G'b25小於0.7MPa，則黏著性吸收層B良好地追隨於晶圓的電路形成面的凹凸，且亦充分吸收應力，故可良好地抑制膜的凸起。黏著性吸收層B的G'b25例如可藉由黏著劑組成物中的交聯劑的量而調整。
黏著性吸收層B的厚度Tb較佳為大於黏著性表層C的厚度Tc。
藉由將黏著性吸收層B的厚度Tb設為一定以上，容易充分獲得由黏著性吸收層B所得的對半導體晶圓的電路形成面的凹凸的追隨性。另一方面，藉由將黏著性吸收層B的厚度Tb設為一定以下，可抑制黏著性吸收層B的滲出、或由剝離半導體晶圓表面保護膜時的該膜的彎曲應力所致的研磨加工後的晶圓的破損等。
黏著性吸收層B的厚度Tb亦取決於晶圓表面的凹凸的高度等，可設為10μm~600μm、較佳為20μm~300μm的範圍。
關於黏著性表層C
黏著性表層C可由公知的黏著劑組成物、例如含有(甲基)丙 烯酸酯聚合物的黏著劑組成物所構成。所述(甲基)丙烯酸酯聚合物的例子中包括日本專利特開2004-210890號公報中記載的(甲基)丙烯酸酯聚合物等。
構成黏著性表層C的黏著劑組成物中所含的(甲基)丙烯酸酯聚合物亦可為黏著性吸收層B中所含的含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物。於該情形時，為了獲得所述較佳的儲存模數，亦可預先使含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯聚合物的一部分或全部(藉由交聯劑)硬化。
於構成黏著性表層C的黏著劑組成物所含的(甲基)丙烯酸酯聚合物並未預先硬化的情形時，該黏著劑組成物亦可除了所述(甲基)丙烯酸酯聚合物以外更含有交聯劑。構成黏著性表層C的黏著劑組成物可與構成黏著性吸收層B的黏著劑組成物相同，亦可不同。
黏著性表層C的於25℃以上且小於250℃的範圍內測定的儲存模數的最小值G'cmin較佳為0.03MPa以上且小於3MPa，進而佳為0.05MPa以上且小於2MPa。若G'cmin為0.03MPa以上，則於高溫步驟中，可抑制由黏著性表層C對晶圓表面的剝離不良所致的殘膠。另一方面，若G'cmin小於3MPa，則可良好地抑制由黏著性表層C的黏著力降低所致的高溫步驟中的膜的凸起。
250℃下的儲存模數G'c250較佳為0.1MPa以上。若 G'c250為0.1MPa以上，則於高溫步驟中，可抑制由黏著性表層C的剝離不良所致的殘膠。G'c250的上限可設為100MPa左右。 G'cmin或G'c250例如可藉由黏著性表層C所含的聚合起始劑的種類或含量等而調整。
黏著性表層C的G'cmin較佳為於不過度損及黏著性的範圍內高於黏著性吸收層B的G'bmin。其原因在於：可抑制將半導體晶圓表面保護膜剝離時的黏著性表層C的殘膠，能以低負荷進行剝離，並且可保持黏著性吸收層B對凹凸的追隨性、應力吸收性。再者，於黏著性表層C含有預先經硬化的(甲基)丙烯酸酯聚合物的情形時，所謂「黏著性表層C的G'cmin」，是指含有該預先經硬化的(甲基)丙烯酸酯聚合物的黏著性表層C的G'cmin。
黏著性表層C的厚度可於不損及晶圓的保持性或保護性的範圍內設定，較佳為1μm~50μm，進而佳為2μm~40μm左右。藉由將黏著性表層C的厚度設為一定以上，生產性提高，並且可抑制於貼附時黏著性表層C解裂而黏著性吸收層B於表面露出而產生的殘膠。另一方面，藉由將黏著性表層C的厚度設為一定以下，可提高貼附半導體晶圓表面保護膜時的對半導體晶圓表面的凹凸的追隨性。
本發明的半導體晶圓表面保護膜可利用任意方法製造。例如，本發明的半導體晶圓表面保護膜可於基材層A上積層黏著性吸收層B用的黏著劑組成物層、及黏著性表層C用的黏著劑組成物層而獲得。
關於積層，1)於基材層A上直接塗佈形成黏著性吸收層B用的黏著劑組成物層及黏著性表層C用的黏著劑組成物層而進行積層；2)於實施了剝離處理的片材上塗佈形成黏著性吸收層B用的黏著劑組成物層及黏著性表層C用的黏著劑組成物層後；將該些層轉印至基材層A上而獲得本發明的半導體晶圓表面保護膜；3)亦可將所述1)與所述2)的方法組合。
各層用組成物的塗佈可利用模塗機塗敷、輥塗敷、網版塗敷、凹版塗敷等塗敷方式來進行。
具體而言，半導體晶圓表面保護膜可經過以下步驟而獲得：1)於基材層A上塗佈黏著性吸收層B用組成物的塗佈液以及加以乾燥而形成黏著性吸收層B的步驟；2)於經剝離處理的片材上塗佈黏著性表層C用組成物的塗佈液以及加以乾燥而形成黏著性表層C的步驟；及3)將所述2)中所得的黏著性表層C轉印至所述1)的黏著性吸收層B上的步驟。
於所述1)或2)的步驟中，為了控制黏著性吸收層B或黏著性表層C的儲存模數，視需要亦可實施硬化反應。硬化反應可藉由黏著劑組成物所含的樹脂組成物的硬化性官能基或交聯劑來實施。硬化方法並無特別限定，可採用適於所使用的樹脂組成物的方法，例如可藉由放射線硬化或熱硬化來實施。
2.半導體裝置的製造方法
本發明的半導體裝置可經過以下步驟而製造：1)將本發明的半導體晶圓表面保護膜於較顯示出G'bmin的溫度更低的溫度下貼 附於半導體晶圓的電路形成面上的步驟；2)對貼附有半導體晶圓表面保護膜的半導體晶圓的非電路形成面進行研磨的步驟；3)對研磨後的半導體晶圓的非電路形成面於顯示出G'bmin的溫度以上的溫度下進行加工的步驟；以及4)將半導體晶圓表面保護膜剝離的步驟。
於1)的步驟中，將本發明的半導體晶圓表面保護膜於較顯示出G'bmin的溫度更低的溫度下貼附於半導體晶圓的電路形成面上。所謂「較顯示出G'bmin的溫度更低的溫度」，較佳為20℃~120℃，更佳為20℃~80℃。
將本發明的半導體晶圓表面保護膜以黏著性表層C與半導體晶圓接觸的方式重疊於半導體晶圓上後，藉由壓接輥等擠壓機構一面擠壓一面貼附。貼附例如可於高壓釜等可加壓的容器內或真空腔室內進行。
半導體晶圓的電路形成面的階差可為0.1μm以上。
於2)的步驟中，將半導體晶圓的非電路形成面研磨至成為既定的厚度。半導體晶圓的非電路形成面的研磨例如可進行至晶圓厚度成為60μm左右。
3)的步驟可包括在研磨後的半導體晶圓的非電路形成面上形成銅或鋁等的金屬薄膜的步驟(背墊金屬步驟)。金屬薄膜的形成是藉由濺鍍、蒸鍍、鍍敷或CVD等來進行。此時，半導體晶圓容易成為顯示出G'bmin的溫度以上的溫度、例如100℃~350℃、較佳為120℃~350℃的高溫。
於4)的步驟中，將半導體晶圓表面保護膜自半導體晶圓的電路形成面上剝離。剝離溫度例如可設為20℃~100℃。
圖1為表示本發明的半導體晶圓表面保護膜的黏著性吸收層B的溫度-儲存模數的分佈的一例的示意圖。如圖1所示，若緩緩提高溫度，則黏著性吸收層B的儲存模數G'暫且降低後(參照G'bmin)，因高溫步驟中的加熱而儲存模數G'變高(參照G'b250)。
本發明的半導體晶圓表面保護膜的黏著性吸收層B因將G'bmin調整得適度低，故於所述1)的步驟中，可使半導體晶圓表面保護膜良好地追隨於半導體晶圓的電路形成面的凹凸而貼附。藉此，可於所述2)的步驟中抑制半導體晶圓的電路形成面的由研磨水等所致的污染。進而，氣泡不易混入至晶圓的凹凸與膜之間，故即便於所述4)的步驟中暴露於高溫下，亦可抑制因氣泡膨脹而產生的膜的凸起。
另外，於所述3)的步驟中，將半導體晶圓表面保護膜加熱至高溫，故黏著性吸收層B所含的含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物進行熱聚合反應，黏著性吸收層B的儲存模數變高。進而，亦將黏著性表層C的儲存模數調整得適度高。藉此，於所述4)的步驟中，可抑制將半導體晶圓表面保護膜自半導體晶圓的電路形成面上剝離時的黏著力，可抑制晶圓的破裂，且可無殘膠地剝離。
進而，可藉由高溫步驟的熱而提高黏著性吸收層B的儲 存模數，故亦可不進行紫外線照射等。藉此，無需考慮基材層A的透明性、紫外線透過性，可對基材層A自由地選擇使用耐熱性高的樹脂膜。
半導體裝置的製造步驟視需要亦可更包括離子注入步驟、黏晶步驟、打線接合步驟、覆晶連接步驟、固化加溫測試步驟、雜質活化退火處理步驟、樹脂密封步驟、回流步驟等步驟。
[實施例]
以下，參照實施例對本發明加以更詳細說明。本發明的範圍不受該些實施例的限定性解釋。
1.膜的材料
1)基材層A
聚醯亞胺膜：東麗杜邦(Toray-Dupont)股份有限公司製造的卡普頓(Kapton)150EN-A，厚度38μm(並無明確的熔點以至熱分解的耐熱性樹脂膜)
聚萘二甲酸乙二酯膜：帝人杜邦膜(Teijin-Dupont Film)股份有限公司製造的泰奧奈克斯(Teonex)，厚度50μm，熔點269℃
2)黏著性吸收層B或黏著性表層C
(黏著劑塗佈液1的製備)
含有熱聚合性雙鍵的(甲基)丙烯酸酯聚合物P1的合成
將48質量份的丙烯酸乙酯、27質量份的丙烯酸2-乙基己酯、20質量份的丙烯酸甲酯及5質量份的甲基丙烯酸縮水甘油酯以及 作為聚合起始劑的0.2質量份的過氧化苯甲醯混合。將所得的溶液一面攪拌一面於80℃下用5小時滴加至加入有65質量份的甲苯、50質量份的乙酸乙酯的氮氣置換燒瓶中，進而攪拌5小時而進行反應。反應結束後，將所得的溶液冷卻，添加25質量份的二甲苯、2.5質量份的丙烯酸及1.5質量份的氯化十四烷基苄基銨，一面吹入空氣一面於80℃下反應10小時，獲得含有熱聚合性雙鍵的丙烯酸酯系聚合物P1的溶液。來源於甲基丙烯酸縮水甘油酯的結構單元相對於構成聚合物P1的所有結構單元之含有比例為3.926莫耳%。
利用凝膠滲透層析儀(Gel Permeation Chromatography，GPC)(昭和電工股份有限公司製造的昭德系統(Shodex System)-21H)對所得的含有熱聚合性雙鍵的丙烯酸酯系聚合物P1的重量平均分子量(Mw)進行測定，結果為Mw=513,000。
於所得的丙烯酸酯系聚合物P1的溶液中，添加以固體成分換算計相對於聚合物100質量份而為0.8質量份的作為有機過氧化物的日油股份有限公司製造的帕特拉(Pertetra)A(2,2-雙(4,4-雙-(第三丁基過氧化)環己基)丙烷)、及以固體成分換算計相對於聚合物100質量份而為0.5質量份的異氰酸酯交聯劑奧萊斯達(Olester)P49-75S(三井化學股份有限公司製造)，以乙酸乙酯/甲苯1：1混合溶劑稀釋，獲得固體成分濃度27質量%的黏著劑塗佈液1。
(黏著劑塗佈液2的製備)
除了將帕特拉(Pertetra)A(2,2-雙(4,4-二-第三丁基過氧化環己基)丙烷，日油股份有限公司製造)變更為帕布吉(Perbutyl)O(過氧化-2-乙基己酸第三丁酯，日油股份有限公司製造)以外，與黏著劑塗佈液1同樣地獲得黏著劑塗佈液2。
(黏著劑塗佈液3的製備)
於聚合反應機中裝入150質量份的脫離子水、作為聚合起始劑的0.625質量份的4,4'-偶氮雙-4-氰基戊酸[大塚化學(股)製造，商品名：ACVA]、60.25質量份的丙烯酸-2-乙基己酯、20質量份的丙烯酸正丁酯、12質量份的甲基丙烯酸甲酯、3質量份的甲基丙烯酸-2-羥基乙酯、2質量份的甲基丙烯酸、1質量份的丙烯醯胺、1質量份的聚四亞甲基二醇二丙烯酸酯[日本油脂(股)製造，商品名：ADT-250]、及作為水溶性共單體的0.75質量份的於聚氧伸乙基壬基苯基醚(環氧乙烷的加成莫耳數的平均值：約20)的硫酸酯的銨鹽的苯環上導入有聚合性的1-丙烯基而成的化合物[第一工業製藥(股)製造，商品名：阿誇綸(Aqualon)HS-10]，於攪拌下於70℃~72℃下乳化聚合8小時，獲得丙烯酸系樹脂乳液P2。
以9重量%氨水將所得的丙烯酸系樹脂乳液P2中和(pH值=7.0)後，進而添加以固體成分換算計相對於聚合物100質量份而為0.8質量份的日本觸媒股份有限公司製造的凱米泰特(Chemitite)Pz-33(2,2-雙羥基甲基丁醇-三[3-(1-氮丙啶基)丙酸 酯])，獲得固體成分42.5重量%的黏著劑塗佈液3。
(黏著劑塗佈液4的製備)
除了將異氰酸酯交聯劑奧萊斯達(Olester)P49-75S(三井化學股份有限公司製造)變更為異氰酸酯交聯劑塔克奈特(Takenate)D-160N(三井化學股份有限公司製造)以外，與黏著劑塗佈液1同樣地獲得黏著劑塗佈液4。
(黏著劑塗佈液5的製備)
除了將0.5質量份的異氰酸酯交聯劑奧萊斯達(Olester)P49-75S(三井化學股份有限公司製造)變更為2質量份的異氰酸酯交聯劑塔克奈特(Takenate)D-170N(三井化學股份有限公司製造)以外，與黏著劑塗佈液1同樣地獲得黏著劑塗佈液5。
(黏著劑塗佈液6的製備)
除了將異氰酸酯交聯劑奧萊斯達(Olester)P49-75S(三井化學股份有限公司製造)變更為異氰酸酯交聯劑塔克奈特(Takenate)D-120N(三井化學股份有限公司製造)以外，與黏著劑塗佈液1同樣地獲得黏著劑塗佈液6。
(黏著劑塗佈液7的製備)
丙烯酸酯聚合物P3的合成
將21重量份的丙烯酸2-乙基己酯、48重量份的丙烯酸乙酯、21重量份的丙烯酸甲酯、9重量份的丙烯酸2-羥基乙酯及作為聚合起始劑的0.5重量份的過氧化苯甲醯混合，一面攪拌一面於80℃下用5小時滴加至加入有55重量份的甲苯及50重量份的乙酸 乙酯的氮氣置換燒瓶中，進而攪拌5小時進行反應，獲得丙烯酸酯系聚合物P3的溶液。
利用GPC(昭和電工股份有限公司製造的昭德系統(Shodex System)-21H)對所得的丙烯酸酯系聚合物P3的重量平均分子量(Mw)進行測定，結果為Mw=325,000。
於所得的丙烯酸酯聚合物P3的溶液中，以按固體成分比計成為90重量份：10重量份的比率的方式添加丙烯酸酯共聚物P1溶液，均勻攪拌。進而，以固體成分換算計相對於聚合物混合物100質量份而添加0.2重量份的異氰酸酯交聯劑塔克奈特(Takenate)D-120N(三井化學股份有限公司製造)，以乙酸乙酯/甲苯1：1混合溶劑稀釋而獲得固體成分濃度27質量%的黏著劑塗佈液7。
(黏著劑塗佈液8的製備)
於黏著劑塗佈液5中，以固體成分換算計相對於聚合物100質量份而添加0.8質量份的日油股份有限公司製造的帕特拉(Pertetra)A(2,2-雙(4,4-雙-(第三丁基過氧化)環己基)丙烷)，獲得黏著劑塗佈液8。
(黏著劑塗佈液9的製備)
於黏著劑塗佈液7中，以固體成分換算計相對於聚合物100質量份而添加0.3質量份的日油股份有限公司製造的帕特拉(Pertetra)A(2,2-雙(4,4-雙-(第三丁基過氧化)環己基)丙烷)，獲得黏著劑塗佈液9。
(黏著劑塗佈液10的製備)
於所述丙烯酸酯聚合物P3的溶液中，以按固體成分比計成為50重量份：50重量份的比率的方式添加丙烯酸酯共聚物P1溶液，均勻攪拌。進而以固體成分換算計相對於聚合物混合物100質量份而添加2重量份的異氰酸酯交聯劑塔克奈特(Takenate)D-170N(三井化學股份有限公司製造)。進而，以固體成分換算計相對於聚合物100質量份而添加0.8質量份的日油股份有限公司製造的帕特拉(Pertetra)A(2,2-雙(4,4-雙-(第三丁基過氧化)環己基)丙烷)。 以乙酸乙酯/甲苯1：1混合溶劑將所得的溶液稀釋，獲得固體成分濃度27質量%的黏著劑塗佈液10。
(黏著劑塗佈液11的製備)
於所述丙烯酸酯聚合物P3的溶液中，以固體成分換算計相對於聚合物混合物100質量份而添加0.8重量份的異氰酸酯交聯劑奧萊斯達(Olester)P49-75S(三井化學股份有限公司製造)，以乙酸乙酯/甲苯1：1混合溶劑稀釋而獲得固體成分濃度27質量%的黏著劑塗佈液11。
如以下般製作黏著性吸收層B用樣品B1、黏著性吸收層B用樣品B4、黏著性吸收層B用樣品B6、黏著性吸收層B用樣品B7、黏著性吸收層B用樣品B9及黏著性吸收層B用樣品B11、以及黏著性表層C用樣品C1、黏著性表層C用樣品C2、黏著性表層C用樣品C3、黏著性表層C用樣品C5、黏著性表層C用樣品C8及黏著性表層C用樣品C10，測定該些樣品的儲存模數。
準備對片表面實施了矽酮處理(脫模處理)的PET膜作為剝離膜。分別使用模塗機將所得的黏著劑塗佈液塗佈於該PET膜的脫模處理面上後，於100℃下乾燥5分鐘，形成厚度50μm的塗膜。進而將塗膜於60℃下加熱48小時。
將所述獲得的塗膜依序重疊多片，獲得厚度約1mm的片材。將該片材切出成直徑約8mm、厚度1mm左右的圓盤型形狀，製成黏著性吸收層B用樣品B1、黏著性吸收層B用樣品B4、黏著性吸收層B用樣品B6、黏著性吸收層B用樣品B7、黏著性吸收層B用樣品B9及黏著性吸收層B用樣品B11、以及黏著性表層C用樣品C1、黏著性表層C用樣品C2、黏著性表層C用樣品C3、黏著性表層C用樣品C5、黏著性表層C用樣品C8及黏著性表層C用樣品C10。
(儲存模數的測定)
使用動態黏彈性測定裝置(流變儀(Rheometrics)公司製造，型號：RMS-800，使用直徑8mm的平行板(平行圓盤)型附件(attachment))，以頻率1rad/sec、-40℃~300℃的溫度範圍對所得的樣品的儲存模數進行測定。具體而言，將樣品於60℃下介隔所述平行板型附件而設置於動態黏彈性測定裝置中，一面自-40℃起以3℃/min的速度升溫至250℃一面測定儲存模數。測定結束後，於所得的-40℃~250℃的儲存模數-溫度曲線中，於25℃以上且小於250℃的範圍內，分別讀取儲存模數成為最小的溫度；即105℃(B1)、100℃(B4)、102℃(B6)、118℃(B7)、114℃(B9) 及250℃(B11)下的儲存模數G'bmin的值及250℃下的儲存模數G'b250的值。
關於黏著性表層C用樣品C1、黏著性表層C用樣品C2、黏著性表層C用樣品C3、黏著性表層C用樣品C5、黏著性表層C用樣品C8及黏著性表層C用樣品C10，亦與上文所述樣地讀取儲存模數G'cmin的值及250℃下的儲存模數G'c250的值。
Figure 105120959-A0305-02-0034-1
Figure 105120959-A0305-02-0034-2
Figure 105120959-A0305-02-0035-3
2.膜的製作
(實施例1)
黏著性吸收層B的製造
準備經電漿處理的聚醯亞胺膜(東麗杜邦(Toray-Dupont)股份有限公司製造的卡普頓(Kapton)150EN-A，厚度38μm)作為基材層A。於該聚醯亞胺膜的電漿處理面上，使用模塗機來塗佈所得的黏著劑塗佈液1後，於100℃下乾燥5分鐘，形成厚度50μm的黏著性吸收層B。
黏著性表層C的製造
另一方面，使用模塗機將所得的黏著劑塗佈液1塗佈於經脫模處理的聚對苯二甲酸乙二酯脫模膜(SP-PET T15，三井化學東賽璐(Mitsui Chemicals Tohcello)股份有限公司製造)上後，於100℃下乾燥5分鐘，獲得厚度10μm的塗膜。繼而，使所得的塗膜於60℃下熱硬化3天，獲得黏著性表層C。
表面保護膜的製造
將設於脫模膜上的所述黏著性表層C貼合於設於聚醯亞胺膜上的黏著性吸收層B上並擠壓而進行轉印。藉此獲得包含基材層 A/黏著性吸收層B/黏著性表層C(38μm/50μm/10μm)此三層的表面保護膜。
(實施例2)
除了將黏著性表層C的厚度變更為6μm以外，與實施例1同樣地獲得表面保護膜。
(實施例3)
除了將黏著性吸收層B的厚度變更為75μm以外，與實施例1同樣地獲得表面保護膜。
(實施例4及實施例5)
除了如表3所示般變更構成黏著性表層C的黏著性塗佈液的種類以外，與實施例1同樣地獲得表面保護膜。其中，實施例5未進行硬化。
(實施例6及實施例7)
除了分別如表3所示般變更構成黏著性吸收層B的黏著性塗佈液的種類、以及構成黏著性表層C的黏著性塗佈液的種類及硬化條件以外，與實施例1同樣地獲得表面保護膜。
(實施例8)
除了如表3所示般變更基材層A的種類以外，與實施例7同樣地獲得表面保護膜。
(實施例9~實施例11以及比較例2)
除了如表4所示般變更黏著性吸收層B及黏著性表層C的種類或硬化條件以外，與實施例1同樣地獲得表面保護膜。
(比較例1)
除了不設置黏著性吸收層B以外，與實施例1同樣地獲得表面保護膜。
將所得的表面保護膜如以下般貼附於半導體晶圓的電路形成面上並加以研磨後，進行加熱處理而剝離。藉此，利用以下方法來進行1)貼附性、2)減壓下耐熱溫度、3)剝離性、4)耐污染性的評價。
1)貼附性
1-1)密接性
於10片組入有實用評價積體電路直至晶圓周邊部的矽晶圓(直徑：200mm，厚度：725μm，晶片面積：100mm2，切線的寬度：100μm，切線的深度：2μm，於各晶片上局部設有高度10μm的絕緣層)的表面上，分別於70℃下貼附所得的表面保護膜。自所貼附的表面保護膜之上，使用光學顯微鏡OP TIPHOT2(尼康(Nikon)(股)製造)來觀察表面保護膜與晶圓之間的狀態，確認寬度100μm以上的氣泡的有無。10片晶圓中，只要1片中有直徑50μm以上的氣泡的情況下，視為「有氣泡」。
1-2)研磨水的滲入
對於貼附有表面保護膜的晶圓的背面，使用研磨裝置DFG841(迪斯科(Disco)(股)製造)，一面加水冷卻一面研磨至研磨後的晶圓厚度成為60μm。對10片晶圓進行研磨加工。研磨加工結束後，於各晶圓的表面與表面保護膜之間，目測觀察研磨水是否 自晶圓周邊滲入，對研磨水的滲入自邊緣進入5mm以上的片數進行計數。
2)耐真空性(減壓下耐熱溫度)
於所述1)中於晶圓的電路形成面上貼附表面保護膜，放置1小時以上後，於150℃下預烘烤15分鐘，於100Pa以下的減壓下於150℃、180℃、200℃、220℃或250℃下分別進一步加熱30分鐘。目測觀察於減壓下進行加熱的過程中的膜的凸起的有無。將於所述150℃~250℃的範圍內10片晶圓均未確認到凸起的最高溫度視為「減壓下耐熱溫度」。作為凸起的判斷基準，設定為目測確認到直徑0.5mm以上的凸起的情況。
3)易剝離性
3-1)黏著力
將所得的表面保護膜於23℃下介隔其黏著劑層而貼附於SUS304-BA板(JIS G-4305規定，縱：20cm，橫：5cm)上，放置1小時。放置後，自表面保護膜的基材層A側使用減壓乾燥機，於減壓下(10-3Pa)於250℃下加熱30分鐘。其後，夾持表面保護膜的一端，以剝離角度：180度、剝離速度：300mm/min.將膜自SUS304-BA板的表面上剝離。測定該剝離時的應力，換算成g/25mm，作為黏著力。其他條件全部依據JIS Z-0237。
3-2)晶圓的破裂
於所述1-2)中觀察到研磨水的滲入後，利用真空恆溫乾燥機(愛多邦得科(Advantec)(股)製造VO-320)於10-3Pa、250 ℃下將晶圓加熱30分鐘。繼而，利用表面保護膠帶剝離機{高取(Takatori)(股)製造，型號(MODEL)：ATRM-2000B；使用剝離膠帶：高地(Highland)記號纖維膠帶(filament tape)No.897[住友3M(股)製造]}，剝離表面保護膜。對剝離表面保護膜時晶圓破損的片數進行計數。
4)耐污染性
使用光學顯微鏡{尼康(Nikon)(股)製造：OPTIPHOT2}將所述3-3)中於剝離時未破損的晶圓的表面放大至50倍~1000倍的範圍，對於晶圓表面的所有晶片，對每個晶片觀察污染的有無。於晶片上可看到的污染可見1點以上的情形時，確認該污染是由研磨屑所致還是由殘膠所致後，根據下述式算出污染產生率Cr。
Cr=(C2/C1)×100
(Cr：污染產生率(%)，C1：所觀察的晶片數，C2：污染晶片數)
Figure 105120959-A0305-02-0040-4
Figure 105120959-A0305-02-0041-5
Figure 105120959-A0305-02-0041-6
如表3及表4所示，得知實施例1~實施例11的膜並未產生加熱處理下的膜的凸起，具有良好的貼附性。認為其原因在於：實施例1~實施例11的膜的黏著性吸收層B的G'bmin小於0.1MPa，膜良好地追隨於晶圓的凹凸。另外，實施例1~實施例11的膜於加熱處理後無殘膠而具有良好的剝離性。認為其原因在於：實施例1~實施例11的膜的黏著性表層C的G'cmin為0.03MPa以上，且黏著性吸收層B的顯示出G'bmin的溫度為50℃~150℃，故可抑制殘膠或由剝離時的黏著力上升所致的晶圓破裂。
相對於此，得知比較例1的膜的貼附性不充分。認為其原因在於：比較例1的膜不具有黏著性吸收層B，無法充分地追隨於半導體晶圓的電路形成面的凹凸。
另外，比較例2的膜的加熱處理後的黏著力變高，產生殘膠而導致剝離不良。認為其原因在於：黏著性吸收層B的顯示出G'bmin的溫度高於150℃，黏著性吸收層B的儲存模數於高溫步驟中降低，故加熱處理後的黏著力過高。
本申請案主張2015年7月3日提出申請的日本專利特願2015-134596的優先權。將該申請案說明書及圖式記載的內容全部引用至本案說明書中。
[產業上的可利用性]
根據本發明，可提供一種半導體晶圓表面保護膜，該半導體晶圓表面保護膜可良好地追隨於半導體晶圓的電路形成面的凹凸而貼附，且即便於經過背墊金屬步驟等高溫步驟的情形時， 亦可抑制剝離時的晶圓的破裂或殘膠。

Claims (19)

  1. 一種半導體晶圓表面保護膜，依序具有基材層A、黏著性吸收層B及黏著性表層C，所述黏著性吸收層B包含含有熱硬化性樹脂b1的黏著劑組成物，所述黏著性吸收層B的於25℃以上且小於250℃的範圍內的儲存模數G'b的最小值G'bmin為0.001MPa以上且小於0.1MPa，250℃下的儲存模數G'b250為0.005MPa以上且10MPa以下，且顯示出所述G'bmin的溫度為50℃以上且150℃以下，所述黏著性表層C的於25℃以上且小於250℃的範圍內的儲存模數G'c的最小值G'cmin為0.03MPa以上且小於3MPa。
  2. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述G'cmin大於所述G'bmin。
  3. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述G'b250大於所述G'bmin。
  4. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中250℃下的所述黏著性表層C的儲存模數G'c250為0.1MPa以上。
  5. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述黏著性吸收層B的厚度Tb為10μm以上且600μm以下，且所述黏著性表層C的厚度Tc為1μm以上且50μm以下。
  6. 如申請專利範圍第1項所述的半導體晶圓表面保護膜， 其中所述熱硬化性樹脂b1為含有熱聚合性雙鍵、環氧基或氮丙啶基的熱硬化性樹脂。
  7. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述熱硬化性樹脂b1為含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯系聚合物。
  8. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述熱硬化性樹脂b1為含有熱聚合性雙鍵的(甲基)丙烯酸酯系聚合物。
  9. 如申請專利範圍第7項所述的半導體晶圓表面保護膜，其中所述熱硬化性樹脂b1為以所述含有熱聚合性雙鍵、環氧基或氮丙啶基的化合物將所述(甲基)丙烯酸酯系聚合物的所有結構單元中的0.2莫耳%~30莫耳%的結構單元改質而成。
  10. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述黏著劑組成物更含有熱聚合起始劑。
  11. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述黏著劑組成物更含有熱塑性樹脂b2，所述熱硬化性樹脂b1與所述熱塑性樹脂b2之含有比以b1/b2之質量比計為1/99~90/10。
  12. 如申請專利範圍第11項所述的半導體晶圓表面保護膜，其中所述熱塑性樹脂b2為(甲基)丙烯酸酯聚合物。
  13. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述黏著劑組成物更含有交聯劑。
  14. 如申請專利範圍第1項所述的半導體晶圓表面保護膜，其中所述黏著性表層C含有(甲基)丙烯酸酯聚合物。
  15. 如申請專利範圍第14項所述的半導體晶圓表面保護膜，其中所述黏著性表層C所含的所述(甲基)丙烯酸酯聚合物含有熱聚合性雙鍵、環氧基或氮丙啶基。
  16. 如申請專利範圍第15項所述的半導體晶圓表面保護膜，其中所述黏著性表層C所含的所述含有熱聚合性雙鍵、環氧基或氮丙啶基的(甲基)丙烯酸酯聚合物的至少一部分經硬化。
  17. 一種半導體裝置的製造方法，包括：將如申請專利範圍第1項所述的半導體晶圓表面保護膜於較顯示出G'bmin的溫度更低的溫度下貼附於半導體晶圓的電路形成面上的步驟；對貼附有所述半導體晶圓表面保護膜的半導體晶圓的非電路形成面進行研磨的步驟；對研磨後的所述半導體晶圓的非電路形成面於顯示出G'bmin的溫度以上的溫度下進行加工的步驟；以及將所述半導體晶圓表面保護膜剝離的步驟。
  18. 如申請專利範圍第17項所述的半導體裝置的製造方法，其中於所述半導體晶圓的電路形成面上設有0.1μm以上的階差。
  19. 如申請專利範圍第17項所述的半導體裝置的製造方法，其中所述於顯示出G'bmin的溫度以上的溫度下進行加工的步 驟包括：藉由選自由濺鍍、蒸鍍、鍍敷及化學氣相沈積所組成的群組中的至少一種於所述半導體晶圓的非電路形成面上形成薄膜的步驟；雜質活化退火處理步驟；離子注入步驟或回流步驟。
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